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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSS35200MR6T1G

Name: NSS35200MR6T1G
Brand: onsemi
SKU: NSS35200MR6T1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSS35200MR6T1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: NSS35200MR6T1G.pdf

Description:: TRANS PNP 35V 2A 6-TSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NSS35200MR6T1G from onsemi is a PNP bipolar junction transistor optimized for low-voltage, high-speed switching with −35 V V_CEO, −5.0 A I_C(peak), and ultra-low −0.125 V typical V_CE(sat) at −0.8 A/−8 mA drive. It delivers high DC current gain (h_FE = 100–400) and operates in portable power management, motor control, and automotive safety systems.

For engineers reviewing the NSS35200MR6T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at ≥2 A, TSOP-6 thermal resistance (R_JA = 120 °C/W with 1.0×1.0 inch pad), AEC-Q101 qualification, and direct drive compatibility with PMU outputs.

Technical Context

This PNP transistor uses silicon planar epitaxial construction with optimized base doping and emitter geometry to achieve sub-150 mV saturation voltage at high current density. Its linear h_FE curve supports analog amplifier use while maintaining fast switching (t_on = 35 ns, t_off = 225 ns) under −10 V V_CC conditions.

The device integrates dual-collector terminals (pins 1,2,5,6) and dual-emitter bonding in TSOP-6 package to reduce parasitic inductance and improve current sharing. Thermal design leverages low R_JL = 80 °C/W (junction-to-lead #1) and 1.75 W single-pulse power capability for transient load handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−35 V - Maximum safe collector-emitter blocking voltage in open-base configuration
I_C(cont)	−2.0 A - Continuous DC collector current rating at T_A = 25°C with derating
V_CE(sat)	−0.125 V typ. @ −0.8 A/−0.008 A - Enables <125 mW conduction loss per switch at rated current
h_FE	100–400 - Stable DC current gain across −1.0 to −2.0 A, enabling direct PMU-level base drive
f_T	100 MHz - Sufficient for >10 MHz switching in DC-DC converters and PWM motor control
R_JA	120 °C/W - Achieved with 1.0×1.0 inch copper pad; enables 1.0 W continuous dissipation at 75°C ambient

Pinout & Package

Package: TSOP-6 (Case 318G), 3.00 × 1.50 × 0.90 mm, 0.95 mm pitch, Pb-free, RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Collector	Four parallel collector terminals reduce bond wire inductance and increase current capacity
3	Base	Single base connection for unified control; requires −8 mA to saturate at −0.8 A I_C
4	Emiter	Emitter terminal referenced to system ground in common-emitter configurations

Key Features

Feature	Design Value
Ultra-low V_CE(sat)	−0.125 V typical at −0.8 A ensures <100 mW conduction loss in battery-powered DC-DC stages
AEC-Q101 qualified	Validated for automotive airbag and instrument cluster use with full PPAP documentation support
High h_FE linearity	h_FE remains stable from −1.0 A to −2.0 A, enabling predictable analog gain in sensor interface circuits
TSOP-6 thermal performance	R_JL = 80 °C/W to lead #1 allows efficient heat transfer to PCB copper without heatsink

Applications

Portable DC-DC Converters	Battery-Powered Motor Control
Use Scenario: Step-down regulation in smartphones and digital cameras requiring <1 V output with >2 A load. IC Role / Device Role / Timing Role: Main PNP switch in synchronous buck or linear regulator output stage. Use Value: −0.125 V V_CE(sat) minimizes dropout and extends battery runtime by reducing conduction loss by >40% vs. standard PNP transistors.	Use Scenario: Low-voltage H-bridge driver for disc drive spindle motors and tape transport systems. IC Role / Device Role / Timing Role: High-side PNP switch controlling motor phase current in 3–5 V systems. Use Value: Dual-collector layout (pins 1,2,5,6) lowers effective R_DS(on)-equivalent resistance, improving torque consistency at startup.
Automotive Airbag Deployment	Analog Signal Amplification
Use Scenario: Trigger circuit for pyrotechnic squibs requiring precise, high-current pulse delivery within 10 ms. IC Role / Device Role / Timing Role: Final-stage current amplifier driving squib loads from microcontroller GPIO. Use Value: 225 ns t_off and 1.75 W single-pulse rating ensure reliable squib firing without thermal runaway during fault events.	Use Scenario: Low-noise preamplifier for thermistor or Hall-effect sensor signals in instrument clusters. IC Role / Device Role / Timing Role: Linear-mode PNP amplifier with fixed bias network for DC-coupled signal conditioning. Use Value: Linear h_FE response over −1.0 to −2.0 A enables accurate gain setting without feedback compensation.

Portable DC-DC Converters

Battery-Powered Motor Control

Use Scenario: Step-down regulation in smartphones and digital cameras requiring <1 V output with >2 A load.

IC Role / Device Role / Timing Role: Main PNP switch in synchronous buck or linear regulator output stage.

Use Value: −0.125 V V_CE(sat) minimizes dropout and extends battery runtime by reducing conduction loss by >40% vs. standard PNP transistors.

Use Scenario: Low-voltage H-bridge driver for disc drive spindle motors and tape transport systems.

IC Role / Device Role / Timing Role: High-side PNP switch controlling motor phase current in 3–5 V systems.

Use Value: Dual-collector layout (pins 1,2,5,6) lowers effective R_DS(on)-equivalent resistance, improving torque consistency at startup.

Automotive Airbag Deployment

Analog Signal Amplification

Use Scenario: Trigger circuit for pyrotechnic squibs requiring precise, high-current pulse delivery within 10 ms.

IC Role / Device Role / Timing Role: Final-stage current amplifier driving squib loads from microcontroller GPIO.

Use Value: 225 ns t_off and 1.75 W single-pulse rating ensure reliable squib firing without thermal runaway during fault events.

Use Scenario: Low-noise preamplifier for thermistor or Hall-effect sensor signals in instrument clusters.

IC Role / Device Role / Timing Role: Linear-mode PNP amplifier with fixed bias network for DC-coupled signal conditioning.

Use Value: Linear h_FE response over −1.0 to −2.0 A enables accurate gain setting without feedback compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906LT1G	V_CEO = −40 V, I_C = −200 mA, V_CE(sat) = −0.4 V @ −50 mA - higher saturation voltage, lower current rating	Not suitable for >500 mA loads; limited to signal-level switching and bias networks	Select when only small-signal amplification or logic-level inversion is required; avoid for power switching.
ZTX951	V_CEO = −60 V, I_C = −1 A, V_CE(sat) = −0.35 V @ −500 mA - wider voltage range but 2.8× higher V_CE(sat)	Acceptable for 12 V industrial controls but inefficient in 3.3–5 V battery systems due to excessive conduction loss	Prefer for higher-voltage legacy designs where thermal margin exists; not recommended for portable energy-sensitive applications.

Compared with MMBT3906LT1G and ZTX951, the NSS35200MR6T1G uniquely combines −2.0 A continuous current, −0.125 V V_CE(sat), and AEC-Q101 qualification in TSOP-6 - enabling compact, thermally efficient, and automotive-compliant switching where both power density and reliability are critical.

Availability

NSS35200MR6T1G is available at Aetrix Electronics and suitable for portable DC-DC converters, automotive airbag modules, and battery-powered motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for NSS35200MR6T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The NSS35200MR6T1G belongs to onsemi's e2PowerEdge family - engineered specifically for low-voltage, high-efficiency switching in space-constrained portable and automotive electronics where minimal V_CE(sat) and high h_FE directly impact battery life and thermal design.

FAQ

What is the maximum continuous collector current rating for the NSS35200MR6T1G?

The NSS35200MR6T1G has a maximum continuous collector current (I_C) rating of −2.0 A at T_A = 25°C with appropriate PCB copper area. Derating applies above 25°C at 8.0 mW/°C when mounted on a 1.0 × 1.0 inch FR-4 pad, supporting up to ~1.0 W continuous dissipation in typical layouts. This rating is confirmed in the "Thermal Characteristics" table of the official NSS35200MR6/D datasheet.

Is the NSS35200MR6T1G qualified for automotive applications?

Yes, the NSS35200MR6T1G is AEC-Q101 qualified and PPAP capable, as explicitly stated in the "Features" section of its datasheet. It is approved for use in automotive airbag deployment circuits and instrument clusters, with full stress testing including temperature cycling, humidity bias, and ESD (HBM Class 3, MM Class C). The "S Prefix" variant (e.g., NSS35200MR6T1G) denotes automotive-specific site and control requirements.

How many collector terminals does the NSS35200MR6T1G have, and why?

The NSS35200MR6T1G has four collector terminals - pins 1, 2, 5, and 6 - as shown in the mechanical outline and pin diagram on page 1 of the NSS35200MR6/D datasheet. This multi-terminal configuration reduces bond wire inductance and distributes current, lowering effective saturation resistance and improving thermal spreading in high-current switching applications like motor drives and DC-DC converters.

What is the typical V_CE(sat) of the NSS35200MR6T1G at 2.0 A collector current?

The typical V_CE(sat) of the NSS35200MR6T1G at −2.0 A collector current and −20 mA base current is −0.260 V, with a maximum of −0.31 V, per the "ELECTRICAL CHARACTERISTICS" table (Note 4, pulsed condition). This value is measured under standardized test conditions and reflects real-world conduction loss in high-current switching nodes.

Does the NSS35200MR6T1G require a heatsink in standard PCB layouts?

No, the NSS35200MR6T1G does not require an external heatsink when mounted on a standard FR-4 PCB with a 1.0 × 1.0 inch copper pad. Its R_JA = 120 °C/W (Note 2) and R_JL = 80 °C/W enable 1.0 W continuous dissipation at 75°C ambient - sufficient for most portable and automotive applications. Thermal performance is validated in Figure 8 (Normalized Thermal Response) of the NSS35200MR6/D datasheet.

NSS35200MR6T1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 35 V

Vce Saturation (Max) @ Ib, Ic:: 310mV @ 20mA, 2A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 1.5A, 1.5V

Power - Max:: 625 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

NSS35200MR6T1G FAQ

1.How can I place an order for NSS35200MR6T1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS35200MR6T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS35200MR6T1G reliable?

The price and inventory of NSS35200MR6T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS35200MR6T1G is usually 5 days.

3.What payment methods are accepted for NSS35200MR6T1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS35200MR6T1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS35200MR6T1G?

NSS35200MR6T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS35200MR6T1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS35200MR6T1G?

For technical support, including NSS35200MR6T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS35200MR6T1G requirements.

6.How does Aetrix verify that NSS35200MR6T1G is sourced from the original manufacturer or authorized distributors?

All NSS35200MR6T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS35200MR6T1G meets industry standards.

7.What is the process for return or replacement of NSS35200MR6T1G?

All NSS35200MR6T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS35200MR6T1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS35200MR6T1G part is unused and in its original packaging.

Return procedure for NSS35200MR6T1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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