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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSS40200LT1G

Name: NSS40200LT1G
Brand: onsemi
SKU: NSS40200LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSS40200LT1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: NSS40200LT1G.pdf

Description:: TRANS PNP 40V 2A SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NSS40200LT1G from onsemi is a PNP bipolar junction transistor designed for low-voltage, high-speed switching in portable power management systems. It delivers −40 V V_CEO, −2.0 A continuous collector current, and ultra-low V_CE(sat) down to −0.010 V at I_C = −0.1 A / I_B = −0.010 A - enabling high-efficiency DC−DC conversion in battery-powered devices like smartphones and digital cameras.

For engineers reviewing the NSS40200LT1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SOT−23 package compatibility, guaranteed AEC−Q101 qualification (NSV variant), low saturation voltage under high-current drive, and thermal performance validated up to +150 °C junction temperature.

Technical Context

This device belongs to onsemi's e2PowerEdge family of low-V_CE(sat) transistors, optimized for direct drive from PMU control outputs due to high h_FE (min 150 at I_C = −2.0 A) and linear gain behavior. Its design targets energy-efficient switching in space-constrained layouts where thermal resistance (R_JA = 230 °C/W on 500 mm² copper) and fast switching (t_r = 120 ns, t_f = 130 ns) are critical.

The NSS40200LT1G operates with fixed PNP topology and exhibits stable cutoff characteristics (I_CBO ≤ −0.1 μA, V_EB = −7.0 V), making it suitable for precision analog amplification and robust digital switching across −55 °C to +150 °C ambient range. Its f_T = 100 MHz supports RF-adjacent signal conditioning in compact consumer electronics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−40 V - supports reliable operation in 24 V and 36 V automotive and industrial supply rails with margin.
I_C (continuous)	−2.0 A - enables direct control of moderate-power loads such as LED drivers or motor gate logic without external buffering.
V_CE(sat) @ I_C/I_B = −1.0 A/−0.1 A	−0.080 V max - reduces conduction loss by >60% vs. standard PNP transistors, improving efficiency in battery discharge paths.
h_FE @ I_C = −2.0 A	150 min - allows direct interface with low-drive-strength PMU outputs (e.g., 10 mA base current suffices for full 2 A switching).
f_T	100 MHz - ensures stable small-signal amplification and fast edge response in feedback loops and pulse-width modulated circuits.
R_JA (500 mm²)	230 °C/W - permits sustained 540 mW dissipation at TA = 25 °C, supporting thermally dense PCB designs without heatsinking.

Pinout & Package

SOT−23 (TO−236) surface-mount package, 2.90 × 1.30 × 1.00 mm, lead-free, RoHS compliant. Case outline per ON Semiconductor Document 98ASB42226B, Style 6.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires −10 mA to −300 mA peak drive depending on load current and switching speed target.
2	Emitter	High-side reference terminal; connected to positive rail in high-side switch configurations.
3	Collector	Load connection node; sinks current to ground or lower-potential node during conduction.

Key Features

Feature	Design Value
Ultra-low V_CE(sat)	As low as −0.010 V enables <10 mW conduction loss at 100 mA - critical for extending battery life in always-on subsystems.
AEC−Q101 qualified variant (NSV40200LT1G)	Validated for automotive applications including airbag deployment and instrument cluster power control under harsh thermal cycling.
High h_FE linearity	h_FE remains ≥150 from 10 mA to 2.0 A - eliminates need for Darlington pairing or base-current compensation networks.
Thermal robustness	Junction temperature rated to +150 °C with safe operating area (SOA) defined up to 10 ms pulses - supports surge-tolerant power sequencing.
Pb-free, Halogen-free/BFR-free	Complies with global environmental regulations (RoHS, JESD204) without compromising solderability or long-term reliability.

Applications

DC–DC Converter Switching	Portable Device Power Management
Use Scenario: High-efficiency buck converter topologies in smartphones and wearables requiring minimal dropout and low quiescent loss. IC Role / Device Role / Timing Role: PNP high-side switch controlling inductor current path during PWM off-cycle; driven directly by PMU output. Use Value: V_CE(sat) ≤ −0.095 V at 1.0 A reduces conduction loss by 4× vs. legacy PNP transistors, increasing conversion efficiency by 2–3% at light-to-moderate loads.	Use Scenario: Load switching for camera flash LEDs, USB port power enable, and display backlight control in PDAs and MP3 players. IC Role / Device Role / Timing Role: Low-side or high-side discrete switch enabling/disabling power domains based on system sleep/wake states. Use Value: Fast switching (t_s = 400 ns, t_f = 130 ns) minimizes transition losses during frequent on/off cycles, preserving battery capacity over thousands of daily operations.
Low-Voltage Motor Control	Automotive Instrument Cluster
Use Scenario: Bidirectional current control in disc drive spindle motors and tape drive capstan drivers operating from 3.3 V or 5 V rails. IC Role / Device Role / Timing Role: Complementary PNP switch in H-bridge half-bridge stage; paired with NPN counterpart for direction reversal. Use Value: High h_FE (≥220 at 500 mA) ensures full saturation with minimal base drive, reducing MCU GPIO loading and simplifying gate driver design.	Use Scenario: Power sequencing and fault-isolation for LCD displays, warning indicators, and sensor interfaces in automotive dashboards. IC Role / Device Role / Timing Role: AEC−Q101-qualified PNP switch managing 12 V supply routing to safety-critical submodules. Use Value: Validated operation from −40 °C to +150 °C and ESD robustness (HBM Class 3B) ensure functional integrity during cold cranking and under-hood thermal stress.

DC–DC Converter Switching

Portable Device Power Management

Use Scenario: High-efficiency buck converter topologies in smartphones and wearables requiring minimal dropout and low quiescent loss.

IC Role / Device Role / Timing Role: PNP high-side switch controlling inductor current path during PWM off-cycle; driven directly by PMU output.

Use Value: V_CE(sat) ≤ −0.095 V at 1.0 A reduces conduction loss by 4× vs. legacy PNP transistors, increasing conversion efficiency by 2–3% at light-to-moderate loads.

Use Scenario: Load switching for camera flash LEDs, USB port power enable, and display backlight control in PDAs and MP3 players.

IC Role / Device Role / Timing Role: Low-side or high-side discrete switch enabling/disabling power domains based on system sleep/wake states.

Use Value: Fast switching (t_s = 400 ns, t_f = 130 ns) minimizes transition losses during frequent on/off cycles, preserving battery capacity over thousands of daily operations.

Low-Voltage Motor Control

Automotive Instrument Cluster

Use Scenario: Bidirectional current control in disc drive spindle motors and tape drive capstan drivers operating from 3.3 V or 5 V rails.

IC Role / Device Role / Timing Role: Complementary PNP switch in H-bridge half-bridge stage; paired with NPN counterpart for direction reversal.

Use Value: High h_FE (≥220 at 500 mA) ensures full saturation with minimal base drive, reducing MCU GPIO loading and simplifying gate driver design.

Use Scenario: Power sequencing and fault-isolation for LCD displays, warning indicators, and sensor interfaces in automotive dashboards.

IC Role / Device Role / Timing Role: AEC−Q101-qualified PNP switch managing 12 V supply routing to safety-critical submodules.

Use Value: Validated operation from −40 °C to +150 °C and ESD robustness (HBM Class 3B) ensure functional integrity during cold cranking and under-hood thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT4403LT1G	V_CEO = −40 V, I_C = −0.6 A, V_CE(sat) = −0.2 V @ −0.5 A - higher saturation voltage, lower current rating.	Best suited for signal-level switching (<500 mA); not recommended for 2 A DC–DC output stages.	Select when cost sensitivity outweighs efficiency needs and load current stays below 600 mA.
ZTX951	V_CEO = −60 V, I_C = −1.0 A, V_CE(sat) = −0.25 V @ −0.5 A - wider voltage margin but significantly higher conduction loss.	Used in industrial controls requiring >40 V breakdown; unsuitable for compact battery-powered designs due to larger SOT-89 package.	Choose only if system requires >40 V blocking capability and board space permits TO-92/SOT-89 footprint.

Compared with MMBT4403LT1G and ZTX951, the NSS40200LT1G uniquely combines 2.0 A current handling, sub-100 mV V_CE(sat), and SOT−23 footprint - delivering optimal power density and thermal efficiency for next-generation portable and automotive power switches.

Availability

NSS40200LT1G is available at Aetrix Electronics and suitable for DC–DC converters, portable device power management, and low-voltage motor control requiring stable component supply, consistent parametric performance, and AEC−Q101 traceability for automotive programs.

Supply support for NSS40200LT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The NSS40200LT1G belongs to the e2PowerEdge family - engineered specifically for high-efficiency, low-voltage switching in space-constrained portable and automotive electronics where ultra-low saturation voltage and high current gain are essential.

FAQ

What is the maximum continuous collector current rating for the NSS40200LT1G?

The NSS40200LT1G is rated for −2.0 A continuous collector current at T_A = 25 °C with adequate PCB copper (500 mm²). Derating applies above 25 °C at 4.3 mW/°C, limiting usable current in high-ambient environments. This rating is confirmed in the Absolute Maximum Ratings table of the official onsemi datasheet (Rev. 9, April 2024), and the NSS40200LT1G maintains stable h_FE and V_CE(sat) performance across its full −2.0 A range.

Is the NSS40200LT1G suitable for automotive applications?

The NSS40200LT1G itself is not AEC−Q101 qualified; however, its NSV40200LT1G variant is fully qualified and PPAP-capable for automotive use. Both share identical electrical specs and SOT−23 packaging, but only the NSV prefix indicates automotive-grade process control, extended temperature validation (−40 °C to +150 °C), and enhanced ESD robustness (HBM Class 3B). For instrument cluster or airbag systems, specify NSV40200LT1G - the NSS40200LT1G is intended for industrial and consumer applications.

What is the typical V_CE(sat) of the NSS40200LT1G at 1.0 A collector current?

The typical V_CE(sat) of the NSS40200LT1G at I_C = −1.0 A and I_B = −0.100 A is −0.080 V, with a maximum guaranteed value of −0.095 V under the same conditions. This ultra-low saturation voltage is measured per the Electrical Characteristics table (page 3 of the datasheet) and enables significantly reduced conduction losses compared to standard PNP transistors - a key advantage reflected in the NSS40200LT1G's role in high-efficiency DC–DC converters.

Does the NSS40200LT1G have a documented safe operating area (SOA)?

Yes - Figure 9 in the onsemi datasheet provides the SOA curve for the NSS40200LT1G, covering pulsed operation up to 10 seconds with defined voltage/current boundaries. The curve confirms single-pulse power dissipation capability of 710 mW and validates operation at −40 V / −100 mA for 10 ms, supporting transient surge handling in power sequencing circuits. This SOA data is integral to designing reliable protection against secondary breakdown in the NSS40200LT1G.

What is the thermal resistance (R_JA) of the NSS40200LT1G on a standard PCB layout?

The NSS40200LT1G has two specified R_JA values depending on PCB copper area: 270 °C/W for FR-4 with 100 mm² copper (Note 1), and 230 °C/W for FR-4 with 500 mm² copper (Note 2). These values are measured per JEDEC standards and define realistic thermal performance in production layouts - enabling accurate junction temperature estimation for the NSS40200LT1G in thermal-aware designs such as battery-powered handheld devices.

NSS40200LT1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 170mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 220 @ 500mA, 2V

Power - Max:: 460 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

NSS40200LT1G FAQ

1.How can I place an order for NSS40200LT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS40200LT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS40200LT1G reliable?

The price and inventory of NSS40200LT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS40200LT1G is usually 5 days.

3.What payment methods are accepted for NSS40200LT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS40200LT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS40200LT1G?

NSS40200LT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS40200LT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS40200LT1G?

For technical support, including NSS40200LT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS40200LT1G requirements.

6.How does Aetrix verify that NSS40200LT1G is sourced from the original manufacturer or authorized distributors?

All NSS40200LT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS40200LT1G meets industry standards.

7.What is the process for return or replacement of NSS40200LT1G?

All NSS40200LT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS40200LT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS40200LT1G part is unused and in its original packaging.

Return procedure for NSS40200LT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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