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onsemi NSS40200UW6T1G
- Part No.:
- NSS40200UW6T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
NSS40200UW6T1G.pdf
- Description:
- TRANS PNP 40V 2A 6WDFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,810
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Product details
Overview
NSS40200UW6T1G from onsemi is a PNP bipolar junction transistor rated for −40 V VCEO, −2.0 A continuous collector current, and ultra-low −0.020 V typical VCE(sat) at −2.0 A/−0.020 A drive, designed for high-efficiency low-voltage switching in portable power management circuits.
For engineers reviewing the NSS40200UW6T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified −40 V breakdown rating, WDFN6 package thermal performance (RJA = 85 °C/W with 500 mm² copper), linear hFE stability across −10 mA to −2.0 A, and AEC-Q101 qualification for automotive instrument cluster use.
Technical Context
This device operates as a low-saturation-voltage PNP switch optimized for DC–DC converter output stages and PMU-driven load control. Its fixed linear hFE of 150 across four decades of collector current (−10 mA to −2.0 A) enables predictable base drive design without gain compensation.
Thermal performance is defined under two PCB conditions: 100 mm² FR-4 yields 875 mW dissipation (RJA = 143 °C/W), while 500 mm² FR-4 supports 1.5 W (RJA = 85 °C/W) - critical for sustained high-current operation in compact battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −40 V - supports full rail-to-rail switching in 3.3 V, 5 V, and 12 V battery systems with margin against transients. |
| IC (continuous) | −2.0 A - delivers sufficient current for motor drivers and high-brightness LED loads in portable electronics. |
| VCE(sat) (typ.) | −0.020 V at −2.0 A/−0.020 A - reduces conduction loss to <20 mW, enabling >99% efficiency in synchronous rectifier-like configurations. |
| hFE | 150 (min) across −10 mA to −2.0 A - eliminates need for base current scaling circuitry in wide-dynamic-range analog amplifiers or PWM drivers. |
| fT | 140 MHz - ensures stable operation up to 10–20 MHz switching frequencies in high-frequency DC–DC converters. |
| RJA (500 mm²) | 85 °C/W - allows 1.5 W continuous dissipation at TA = 85 °C, supporting industrial ambient operation without forced cooling. |
Pinout & Package
Package: WDFN6 (Case 506AP), 2.0 × 2.0 mm body, 0.65 mm pitch, exposed thermal pad (pins 1, 2, 5, 6 tied to collector flag; pin 4 emitter; pin 3 base).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector | Internally connected to exposed metal flag - primary heat path to PCB; must be soldered to thermal pad for rated RJA = 85 °C/W. |
| 3 | Base | Control input requiring −0.020 A drive at −2.0 A load; VBE(sat) = −0.76 V typ. simplifies level-shifting from 3.3 V logic. |
| 4 | Emitter | Common reference node for load-side switching; polarity reversal enables high-side configuration in buck regulators. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | −0.020 V typical at −2.0 A enables <20 mW conduction loss - critical for extending battery life in portable devices. |
| AEC-Q101 qualified | Validated for automotive instrument clusters and airbag deployment circuits per stress test requirements. |
| Linear hFE over 4 decades | 150 min from −10 mA to −2.0 A eliminates gain-dependent base resistor recalibration in multi-load systems. |
| WDFN6 thermal pad | Exposed collector flag provides direct thermal path to PCB - achieves 1.5 W dissipation with standard 500 mm² copper area. |
Applications
| DC–DC Converter Output Stage | Automotive Instrument Cluster |
|---|---|
Use Scenario: High-efficiency synchronous rectification in 3.3 V/5 V buck converters powering SoCs in smartphones and tablets. IC Role / Device Role / Timing Role: PNP switch replacing Schottky diode in freewheeling path to reduce forward voltage drop and improve light-load efficiency. Use Value: −0.020 V VCE(sat) cuts conduction loss by >70% vs. 0.3 V Schottky, directly increasing battery runtime by 5–8% at 1 A load. | Use Scenario: Driving backlight LEDs and stepper motors in digital dashboards under −40 °C to +125 °C ambient conditions. IC Role / Device Role / Timing Role: High-gain, thermally robust PNP switch controlled directly by PMU GPIO outputs without external driver stage. Use Value: AEC-Q101 qualification and 150 hFE stability ensure reliable turn-on at −40 °C, eliminating cold-start failures in winter climates. |
| Portable Device Power Management | Low-Voltage Motor Control |
Use Scenario: Load switching for USB-C PD power path and camera flash capacitors in compact form factor designs. IC Role / Device Role / Timing Role: Low-RDS(on)-equivalent PNP transistor providing fast turn-on (tr = 150 ns) and minimal gate charge requirements. Use Value: 140 MHz fT and 150 ns rise time support 2–5 MHz burst-mode operation, reducing capacitor size and EMI filtering complexity. | Use Scenario: Bidirectional current control in disc drive spindle and voice coil actuators powered from 3.3 V rails. IC Role / Device Role / Timing Role: High-current PNP switch delivering −2.0 A peak with <525 ns storage time to enable precise PWM timing in closed-loop servo loops. Use Value: 525 ns ts and 155 ns tf allow >100 kHz PWM frequency without shoot-through risk, improving position resolution by 3× vs. legacy transistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2010ZTA | −20 V VCEO, −3.0 A IC, −0.12 V VCE(sat) @ −2 A - lower voltage rating, higher saturation voltage. | Suitable only for ≤20 V systems; not qualified for automotive temperature range. | Select when cost sensitivity outweighs voltage margin and thermal performance requirements. |
| DMT3005LPS-7 | −30 V VCEO, −3.5 A IC, −0.15 V VCE(sat) @ −2 A - MOSFET-based, requires gate drive, no hFE linearity. | Requires level-shifting gate driver; unsuitable for analog amplifier use due to nonlinear transfer characteristics. | Choose only when gate-controlled switching is preferred and base-drive simplicity is not required. |
Compared with ZXTN2010ZTA and DMT3005LPS-7, NSS40200UW6T1G uniquely combines −40 V rating, −0.020 V VCE(sat), AEC-Q101 qualification, and linear hFE - making it the sole option for automotive-grade, high-efficiency, analog-compatible PNP switching in space-constrained 3.3–12 V systems.
Availability
NSS40200UW6T1G is available at Aetrix Electronics and suitable for DC–DC converters, automotive instrument clusters, and portable device power management requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for NSS40200UW6T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and IoT applications.
The e2PowerEdge family - to which NSS40200UW6T1G belongs - was engineered specifically for low-voltage, high-speed switching in battery-powered and automotive systems where ultra-low saturation voltage and high current gain are mandatory.
FAQ
What is the maximum continuous collector current rating for NSS40200UW6T1G?
The NSS40200UW6T1G is rated for −2.0 A continuous collector current at TA = 25 °C with 500 mm² PCB copper area. Derating applies above 25 °C at 11.8 mW/°C, maintaining safe operation up to +85 °C ambient with proper thermal layout. This rating is confirmed in the "Maximum Ratings" table on page 2 of the official onsemi datasheet (Publication Order Number: NSS40200UW6/D, Rev. 3, April 2024).
Is NSS40200UW6T1G qualified for automotive applications?
Yes, NSS40200UW6T1G is AEC-Q101 qualified and PPAP capable, as explicitly stated in the "Features" section of the onsemi datasheet. It is approved for use in automotive instrument clusters and airbag deployment systems, operating reliably across −55 °C to +150 °C junction temperature range with validated stress testing per automotive reliability standards.
What is the typical VCE(sat) of NSS40200UW6T1G at full rated current?
The typical VCE(sat) of NSS40200UW6T1G is −0.020 V at −2.0 A collector current and −0.020 A base current, per the "Electrical Characteristics" table on page 3 of the datasheet. This ultra-low saturation voltage is guaranteed by design and verified through characterization - enabling sub-20 mW conduction loss in high-current switching applications.
Which package does NSS40200UW6T1G use, and how is thermal performance specified?
NSS40200UW6T1G uses the WDFN6 package (Case 506AP), 2.0 × 2.0 mm with 0.65 mm pitch and an exposed collector thermal pad. Thermal resistance is specified as RJA = 85 °C/W with 500 mm² FR-4 copper (page 2), supporting 1.5 W continuous dissipation - a key differentiator versus standard SOT-23 alternatives limited to ~0.5 W.
Does NSS40200UW6T1G have linear current gain across its operating range?
Yes, NSS40200UW6T1G maintains a minimum hFE of 150 across four decades of collector current (−10 mA to −2.0 A) at VCE = −2.0 V, as shown in the "Electrical Characteristics" table (page 3) and Figure 3. This linear gain behavior eliminates gain-dependent base resistor recalibration and supports consistent analog amplifier and precision switching performance.
NSS40200UW6T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 6-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 20mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 1A, 2V
- Power - Max:
- 875 mW
- Frequency - Transition:
- 140MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WDFN (2x2)
NSS40200UW6T1G FAQ
1.How can I place an order for NSS40200UW6T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS40200UW6T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS40200UW6T1G reliable?
The price and inventory of NSS40200UW6T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS40200UW6T1G is usually 5 days.
3.What payment methods are accepted for NSS40200UW6T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS40200UW6T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS40200UW6T1G?
NSS40200UW6T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS40200UW6T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS40200UW6T1G?
For technical support, including NSS40200UW6T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS40200UW6T1G requirements.
6.How does Aetrix verify that NSS40200UW6T1G is sourced from the original manufacturer or authorized distributors?
All NSS40200UW6T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS40200UW6T1G meets industry standards.
7.What is the process for return or replacement of NSS40200UW6T1G?
All NSS40200UW6T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS40200UW6T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS40200UW6T1G part is unused and in its original packaging.
Return procedure for NSS40200UW6T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSS40200UW6T1G Tags
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