My Inquiry
My Account
onsemi NSS40300MZ4T1G
- Part No.:
- NSS40300MZ4T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
NSS40300MZ4T1G.pdf
- Description:
- TRANS PNP 40V 3A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:2,221
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSS40300MZ4T1G from onsemi is a PNP bipolar power transistor in SOT-223 package, rated for 40 V VCEO, 3.0 A continuous collector current, and ultra-low 0.070 V typical VCE(sat) at IC = 0.5 A / IB = 50 mA. It delivers high DC current gain (hFE = 200–350) and 160 MHz fT, optimized for low-voltage, high-speed switching in portable power management.
For engineers reviewing the NSS40300MZ4T1G datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage under real drive conditions, thermal resistance (RJA = 64 °C/W on 1"² pad), AEC-Q101 qualification status, and compatibility with PMU direct-drive logic levels.
Technical Context
This device belongs to onsemi's e2PowerEdge family of low-VCE(sat) transistors, engineered for energy-efficient switching in battery-constrained systems. Its PNP topology enables high-side load control, and its linear hFE behavior supports analog amplifier use where predictable beta is required across operating range.
The SOT-223 package provides enhanced thermal performance over standard SOT-23, with dedicated collector pad for heat dissipation. Pin configuration (C-C-E-B) supports dual-collector parallel routing to reduce effective saturation voltage and improve current handling without external paralleling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter blocking voltage in open-base condition; defines upper limit for DC-DC converter input or motor drive rail voltage. |
| IC (cont.) | 3.0 A - Continuous collector current rating at TC = 25°C; usable up to ~1.5 A at ambient with standard PCB thermal relief. |
| VCE(sat) | 0.070 V (typ.) @ IC=0.5 A/IB=50 mA - Enables <100 mW conduction loss per switch, critical for >90% efficiency in 3.3 V/5 V buck stages. |
| hFE | 200–350 - High and stable DC current gain allows direct drive from low-current PMU outputs (e.g., 20–50 mA GPIO), eliminating base resistors in many cases. |
| fT | 160 MHz - Supports switching frequencies up to ~10–20 MHz in small-signal amplification or fast PWM gate driving applications. |
| RJA | 64 °C/W - Thermal resistance with 1"² copper pad; enables ~1.5 W power dissipation before reaching 150°C junction limit at 25°C ambient. |
Pinout & Package
SOT-223 (Case 318E, Style 1) surface-mount package with exposed collector tab for thermal and electrical connection. Pin 1 = Base, Pin 2 & 4 = Collector (internally connected), Pin 3 = Emitter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal; accepts TTL/CMOS-compatible drive current (≤1.0 A peak); requires no external current-limiting resistor when driven by ≥20 mA sources. |
| 2 & 4 | Collector | Dual-terminal collector connection; reduces effective lead inductance and improves thermal path; must be soldered to large copper area for rated power handling. |
| 3 | Emitter | Reference node for biasing; connects to system ground or negative rail; polarity defines PNP operation (current sinks into emitter). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 0.070 V typ. at IC/IB = 10 - Reduces conduction loss by >50% vs. standard PNP transistors, directly improving battery runtime in portable DC-DC converters. |
| High hFE linearity | 200–350 across IC = 0.01–3.0 A - Enables accurate analog current mirroring and stable Class-A amplifier bias without feedback compensation. |
| AEC-Q101 qualified variant available | NSV40300MZ4T1G - Meets automotive stress test requirements including temperature cycling, HTRB, and ESD; suitable for instrument cluster and airbag subsystems. |
| Pb-free, RoHS-compliant | Halogen-free/BFR-free construction - Complies with IPC-J-STD-020 moisture sensitivity level 3 (MSL3) and JEDEC reflow profile for lead-free assembly. |
Applications
| DC–DC Converter Switch | Portable Device Power Management |
|---|---|
Use Scenario: High-efficiency synchronous or pseudo-synchronous buck converter in smartphones and wearables operating from single-cell Li-ion (3.0–4.2 V). IC Role / Device Role / Timing Role: Low-side PNP switch replacing Schottky diode in asynchronous topology; controlled by PMU PWM output. Use Value: 0.070 V VCE(sat) cuts forward drop by ~300 mV vs. typical Schottky, reducing power loss by >200 mW at 1 A load and extending battery life. |
Use Scenario: Load switch for USB peripheral power enable/disable in tablets and digital cameras. IC Role / Device Role / Timing Role: High-side PNP load switch controlled by 1.8 V/3.3 V GPIO; handles up to 2.5 A peak inrush current. Use Value: High hFE ensures full saturation with ≤20 mA base drive, enabling direct interface to low-power MCU pins without level-shifting or buffer ICs. |
| Low-Voltage Motor Control | Automotive Instrument Cluster |
Use Scenario: Bidirectional 5 V stepper motor driver half-bridge in portable disc drives and barcode scanners. IC Role / Device Role / Timing Role: PNP complement to NPN driver in H-bridge output stage; handles reverse current during decay phase. Use Value: Dual-collector (Pins 2 & 4) layout minimizes trace inductance, suppressing voltage spikes during 10 A/μs current reversal and reducing snubber component count. |
Use Scenario: Backlight dimming and LED current regulation in automotive instrument clusters requiring AEC-Q101 compliance. IC Role / Device Role / Timing Role: Linear current regulator for 12 V LED strings; operated in active region with PWM-modulated base current. Use Value: Stable hFE across −40°C to +125°C ensures consistent LED brightness over temperature, meeting automotive photometric stability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZTX951 | Higher VCEO (60 V), lower hFE (100–250), SOT-89 package, RJA = 125 °C/W | Better for 24 V industrial controls; unsuitable for high-current, low-loss battery apps due to higher VCE(sat) (0.25 V min) | Choose ZTX951 only if higher voltage rating is mandatory and thermal budget allows larger heatsinking. |
| MJD2955T4G | TO-220 package, 60 V VCEO, 10 A IC, but VCE(sat) = 1.3 V (min) at 5 A - 18× higher conduction loss | Designed for high-power linear regulators and audio amplifiers; not optimized for portable efficiency | Select MJD2955T4G only for legacy TO-220 board designs needing >5 A capability where efficiency is secondary to ruggedness. |
Compared with ZTX951 and MJD2955T4G, NSS40300MZ4T1G uniquely balances ultra-low saturation voltage, high current gain, and SOT-223 thermal performance-making it the only option among the three viable for space-constrained, battery-powered systems demanding sub-100 mW conduction loss at 1–3 A loads.
Availability
NSS40300MZ4T1G is available at Aetrix Electronics and suitable for DC–DC converters, portable device power management, and low-voltage motor control requiring stable component supply, RoHS-compliant sourcing, and tape-and-reel delivery for automated assembly.
Supply support for NSS40300MZ4T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation, with leadership in power management, analog, sensors, and connectivity solutions for automotive, industrial, and consumer markets.
The NSS40300MZ4T1G belongs to the e2PowerEdge family-designed specifically for high-efficiency, low-voltage switching in battery-powered electronics where minimizing conduction loss and simplifying drive circuitry are primary system goals.
FAQ
What is the maximum continuous collector current rating for NSS40300MZ4T1G?
The NSS40300MZ4T1G is rated for 3.0 A continuous collector current at case temperature TC = 25°C. Derating applies above 25°C per Figure 1 in the datasheet: power dissipation drops linearly to zero at 150°C junction temperature. At 75°C case temperature, the usable IC is approximately 1.8 A for reliable long-term operation.
Is NSS40300MZ4T1G suitable for automotive applications?
The NSS40300MZ4T1G itself is not AEC-Q101 qualified; however, its automotive-grade variant NSV40300MZ4T1G is fully qualified and PPAP-capable. For non-automotive designs, NSS40300MZ4T1G meets industrial temperature range (−55°C to +150°C) and is widely used in consumer portable equipment requiring robust thermal and electrical performance.
What is the pin configuration of NSS40300MZ4T1G in the SOT-223 package?
The NSS40300MZ4T1G uses SOT-223 (Case 318E) with top-view pinout: Pin 1 = Base, Pins 2 & 4 = Collector (internally bonded), Pin 3 = Emitter. The dual-collector design enhances thermal conduction and reduces effective saturation voltage under high-current conditions.
How does the VCE(sat) of NSS40300MZ4T1G compare across different drive conditions?
NSS40300MZ4T1G specifies VCE(sat) = 0.070 V (typ.) at IC = 0.5 A / IB = 50 mA (IC/IB = 10), 0.150 V (typ.) at IC = 1.0 A / IB = 20 mA (IC/IB = 50), and 0.400 V (max) at IC = 3.0 A / IB = 0.3 A. This confirms strong saturation even at high current density, provided sufficient base drive is maintained.
Can NSS40300MZ4T1G be used in linear amplifier configurations?
Yes - NSS40300MZ4T1G exhibits linear DC current gain (hFE) across collector currents from 10 mA to 3.0 A, as shown in Figures 2 and 3 of the datasheet. This predictability makes it suitable for Class-A audio preamplifiers, current mirrors, and precision analog current sources where beta stability is essential.
NSS40300MZ4T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 300mA, 3A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 175 @ 1A, 1V
- Power - Max:
- 2 W
- Frequency - Transition:
- 160MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223 (TO-261)
NSS40300MZ4T1G FAQ
1.How can I place an order for NSS40300MZ4T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS40300MZ4T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS40300MZ4T1G reliable?
The price and inventory of NSS40300MZ4T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS40300MZ4T1G is usually 5 days.
3.What payment methods are accepted for NSS40300MZ4T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS40300MZ4T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS40300MZ4T1G?
NSS40300MZ4T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS40300MZ4T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS40300MZ4T1G?
For technical support, including NSS40300MZ4T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS40300MZ4T1G requirements.
6.How does Aetrix verify that NSS40300MZ4T1G is sourced from the original manufacturer or authorized distributors?
All NSS40300MZ4T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS40300MZ4T1G meets industry standards.
7.What is the process for return or replacement of NSS40300MZ4T1G?
All NSS40300MZ4T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS40300MZ4T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS40300MZ4T1G part is unused and in its original packaging.
Return procedure for NSS40300MZ4T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSS40300MZ4T1G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
