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onsemi NSS40400CF8T1G

Part No.:
NSS40400CF8T1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
-
Datasheet:
AetrixNSS40400CF8T1G.pdf
Description:
LOW VCES 40V SS XTR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

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Product details

Overview

NSS40400CF8T1G from onsemi is a PNP bipolar junction transistor in the e2PowerEdge family, rated for −40 V VCEO, −7.0 A peak collector current, and ultra-low −0.127 V typical VCE(sat) at −1.0 A/−0.010 A drive. It delivers high DC current gain (hFE = 100–400) and operates up to 100 MHz fT, serving as a high-efficiency switching element in portable DC–DC converters and battery-powered motor controls.

For engineers reviewing the NSS40400CF8T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified −0.127 V VCE(sat) at 1 A, ChipFET package thermal resistance of 79 °C/W (with 500 mm² copper), and confirmed 8-pin collector-base-emitter terminal mapping for high-current routing.

Technical Context

This PNP transistor uses epitaxial base construction to achieve low saturation voltage and linear current gain across its operating range. Its design supports direct drive from PMU control outputs without external amplification due to hFE ≥ 100 at −1.0 A and −0.82 V typical VBE(sat).

The device features a multi-collector layout (pins 1,2,3,6,7,8) with single-base (pin 4) and single-emitter (pin 5) configuration optimized for low-inductance, high-current switching. Thermal performance is validated under two PCB conditions: 100 mm² (RJA = 192 °C/W) and 500 mm² (RJA = 79 °C/W) copper areas.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−40 V - Maximum safe collector-emitter blocking voltage in open-base condition
IC (cont.)−4.0 A - Continuous DC collector current rating at 25°C ambient
VCE(sat)−0.127 V typ. @ −1.0 A/−0.010 A - Enables <0.13 W conduction loss at 1 A, critical for efficiency in portable power stages
hFE100–400 - High, stable DC current gain supports direct microcontroller/PMU drive without base resistors
fT100 MHz - Sufficient for high-speed switching in DC–DC controllers up to ~10 MHz practical frequency
RJA79 °C/W - Achieved with 500 mm² 2 oz copper; enables 1.57 W continuous dissipation at 25°C
Cibo650 pF - Input capacitance impacts gate-drive energy and switching speed in hard-switched topologies

Pinout & Package

Package: ChipFET (Case 1206A-03), 8-lead surface-mount, Pb-free, dimensions 3.05 × 1.63 × 1.05 mm (L×W×H).

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 6, 7, 8CollectorParallel-connected collector terminals reduce effective RCE and improve current sharing; enable high-current routing via multiple PCB pads
4BaseSingle low-impedance control input; designed for direct connection to PMU GPIO or driver IC output
5EmitterCommon emitter node; serves as reference return path for collector current and base drive loop

Key Features

FeatureDesign Value
Ultra-low VCE(sat)−0.127 V typical at −1.0 A ensures <130 mW conduction loss, extending battery life in portable systems
High hFE linearity100–400 over −1.0 to −3.0 A enables predictable analog amplifier operation and stable digital switching thresholds
Multi-collector architectureSix parallel collector pins minimize bond-wire inductance and thermal resistance, supporting robust 7 A peak pulse handling
ChipFET thermal design79 °C/W RJA with 500 mm² copper allows 1.57 W continuous dissipation-2.4× higher than standard SOT-23 equivalents

Applications

Portable DC–DC ConvertersBattery-Powered Motor Control

Use Scenario: Step-down conversion in smartphones and PDAs requiring >90% efficiency at light-to-moderate loads.

IC Role / Device Role / Timing Role: Main switching transistor in synchronous or asynchronous buck topology, operating at 1–3 MHz.

Use Value: −0.127 V VCE(sat) reduces conduction loss by ~40% vs. standard PNP transistors, directly improving system efficiency and thermal margin.

Use Scenario: H-bridge or half-bridge drive for disc drive spindle motors and optical sled actuators.

IC Role / Device Role / Timing Role: Low-side PNP switch controlling motor current direction and braking in 3–5 V systems.

Use Value: High hFE (≥100 at −2 A) eliminates need for Darlington staging, simplifying PCB layout and reducing component count.

Automotive Instrument ClustersLow-Voltage Power Management

Use Scenario: LED backlight dimming and solenoid actuation in dashboard displays and warning indicators.

IC Role / Device Role / Timing Role: Constant-current sink for LED strings or fast-turn-off driver for 12 V coil loads with 5 V logic interface.

Use Value: −0.82 V VBE(sat) ensures full turn-on with 3.3 V MCU outputs, enabling direct logic-level control without level-shifting.

Use Scenario: Load switching and power-path control in USB-powered peripherals and digital cameras.

IC Role / Device Role / Timing Role: High-side or low-side power switch managing 3.3/5 V rail sequencing and fault isolation.

Use Value: 650 pF Cibo and 100 MHz fT support clean 100 ns–1 µs switching transitions, minimizing shoot-through risk in sequenced power domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low VCE(sat) transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT3005LKQ-7−30 V VCEO, −5.0 A IC, −0.15 V VCE(sat) @ −2 A, SOT-23-3 packageLower voltage/current rating; single-collector, no thermal pad; RJA = 200 °C/WUse where board space is constrained and 30 V/5 A suffices; not suitable for 40 V or >1.5 W continuous dissipation
ZXTN25050DFHTA−50 V VCEO, −5.0 A IC, −0.22 V VCE(sat) @ −2 A, SOT-23-6 packageHigher voltage rating but higher saturation voltage; smaller thermal footprint (RJA = 150 °C/W)Select when 50 V blocking is mandatory and efficiency penalty of +0.09 V VCE(sat) is acceptable

Compared with DMT3005LKQ-7 and ZXTN25050DFHTA, NSS40400CF8T1G provides superior thermal performance (79 °C/W), higher peak current (7 A), and lower VCE(sat) (−0.127 V), making it optimal for compact, high-efficiency 40 V portable power stages where heat dissipation and conduction loss are critical.

Availability

NSS40400CF8T1G is available at Aetrix Electronics and suitable for portable DC–DC converters, battery-powered motor controls, and automotive instrument clusters requiring stable component supply and long-term manufacturability.

Supply support for NSS40400CF8T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.

The e2PowerEdge family-including NSS40400CF8T1G-is engineered specifically for high-efficiency, low-voltage switching in portable and battery-constrained systems, emphasizing ultra-low VCE(sat), high current gain, and thermally enhanced packaging.

FAQ

What is the maximum continuous collector current rating for NSS40400CF8T1G?

The NSS40400CF8T1G has a maximum continuous collector current (IC) rating of −4.0 A at TA = 25°C with 500 mm² copper PCB area. Derating applies above 25°C at 12.7 mW/°C. This rating reflects real-world thermal limits-not just silicon capability-and assumes proper heatsinking per the datasheet's Style 4 mounting guidelines.

Does NSS40400CF8T1G support direct drive from a 3.3 V microcontroller GPIO?

Yes, NSS40400CF8T1G supports direct drive from a 3.3 V microcontroller GPIO. With −0.82 V typical VBE(sat) at −1.0 A and hFE ≥ 100, it requires only −10 mA base current to sustain −1.0 A collector current-well within standard GPIO sourcing capability. No base resistor or level shifter is needed in most portable designs.

What is the thermal resistance junction-to-ambient (RJA) for NSS40400CF8T1G under standard PCB conditions?

The NSS40400CF8T1G achieves RJA = 79 °C/W when mounted on FR-4 PCB with 500 mm² of 2 oz copper (per Note 2). With minimal copper (100 mm²), RJA rises to 192 °C/W. These values are measured per JEDEC standards and define realistic power dissipation limits for layout planning.

How many collector terminals does NSS40400CF8T1G have, and why are they split across six pins?

NSS40400CF8T1G has six collector terminals (pins 1, 2, 3, 6, 7, 8) to distribute high current, reduce parasitic inductance, and lower effective on-resistance. This multi-terminal design improves thermal spreading, enhances pulse current handling (up to −7.0 A), and minimizes voltage spikes during fast switching-critical in compact DC–DC and motor drive layouts.

Is NSS40400CF8T1G suitable for analog amplifier applications?

Yes, NSS40400CF8T1G is suitable for analog amplifier applications due to its linear DC current gain (hFE = 100–400 across −1.0 to −3.0 A) and stable VBE(on) (−0.82 to −0.875 V). The datasheet explicitly cites "ideal components in analog amplifiers" for the e2PowerEdge family, and its low noise and gain consistency support Class-A and AB biasing in portable audio and sensor signal chains.

NSS40400CF8T1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
7 A
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
0.1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 2V
Power - Max:
-
Frequency - Transition:
100MHz
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
ChipFET™

NSS40400CF8T1G FAQ

1.How can I place an order for NSS40400CF8T1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS40400CF8T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS40400CF8T1G reliable?

The price and inventory of NSS40400CF8T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS40400CF8T1G is usually 5 days.

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NSS40400CF8T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS40400CF8T1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS40400CF8T1G?

For technical support, including NSS40400CF8T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS40400CF8T1G requirements.

6.How does Aetrix verify that NSS40400CF8T1G is sourced from the original manufacturer or authorized distributors?

All NSS40400CF8T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS40400CF8T1G meets industry standards.

7.What is the process for return or replacement of NSS40400CF8T1G?

All NSS40400CF8T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS40400CF8T1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS40400CF8T1G part is unused and in its original packaging.

Return procedure for NSS40400CF8T1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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