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onsemi NSS40501UW3T2G
- Part No.:
- NSS40501UW3T2G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 3-WDFN Exposed Pad
- Datasheet:
-
NSS40501UW3T2G.pdf
- Description:
- TRANS NPN 40V 5A 3WDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,763
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Product details
Overview
NSS40501UW3T2G from onsemi is a 40 V, 5.0 A NPN bipolar junction transistor optimized for low-voltage, high-speed switching with ultra-low VCE(sat) (0.038 V typ. at IC = 1.0 A, IB = 0.100 A), high DC current gain (hFE = 200–320), and 150 MHz fT, used in DC-DC converters and battery-powered portable electronics.
For engineers reviewing the NSS40501UW3T2G datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage under pulsed load, thermal resistance (RJA = 85 °C/W on 500 mm² PCB), AEC-Q101 qualification status, WDFN3 package footprint compatibility, and drive capability from PMU outputs without external amplification.
Technical Context
This device operates as a low-saturation NPN switch in linear and saturated modes, with guaranteed VCE(sat) ≤ 0.045 V (max) at IC = 1.0 A and IB = 0.100 A, and exhibits stable hFE ≥ 180 up to 3.0 A collector current. Its 150 MHz fT supports fast switching in PWM-controlled power stages.
Thermal performance is defined for two PCB layouts: RJA = 143 °C/W on 100 mm² copper and 85 °C/W on 500 mm² copper, with RJL = 23 °C/W to lead #3. The device features Class 3B HBM ESD protection and operates across −55 °C to +150 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter blocking voltage in open-base configuration. |
| IC (cont.) | 5.0 A - Continuous DC collector current rating at TA = 25 °C with adequate heatsinking. |
| VCE(sat) | 0.038 V (typ.) at IC = 1.0 A, IB = 0.100 A - Enables <15 mW conduction loss per switch at 1 A, critical for high-efficiency DC-DC stages. |
| hFE | 200–320 (IC = 10 mA to 1.0 A) - High, stable current gain allows direct drive from low-current PMU GPIOs without base resistors or buffers. |
| fT | 150 MHz - Supports switching frequencies up to ~10–20 MHz in optimized gate-drive configurations. |
| RJA | 85 °C/W - Achievable thermal resistance on 500 mm² 1 oz copper, enabling 1.5 W continuous dissipation at ambient. |
| ESD Rating | HBM Class 3B (≥8 kV), MM Class C - Robust handling for automated assembly and end-use environments. |
Pinout & Package
Package: WDFN3 (Case 506AU), 2.0 × 2.0 mm body, 0.75 mm height, exposed thermal pad (lead #3), RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Collector | Main high-current output terminal; electrically and thermally connected to exposed pad via internal die attach. |
| 2 | Base | Control input; requires ~100 mA drive for full saturation at 1 A collector current. |
| 3 | Emiter / Thermal Pad | Emitter connection and primary thermal path; must be soldered to PCB copper pour for rated RJA and power handling. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 0.038 V typ. at 1 A enables >98% efficiency in 3.3 V/5 V synchronous buck topologies when used as low-side switch. |
| AEC-Q101 qualified | Validated for automotive applications including airbag deployment and instrument cluster power control under stress conditions. |
| High hFE linearity | hFE remains ≥180 up to 3.0 A, supporting analog amplifier use and reducing base drive complexity in digital switching. |
| Thermally enhanced WDFN3 | Exposed emitter pad (pin 3) delivers RJL = 23 °C/W, allowing 1.5 W continuous operation with minimal PCB area. |
| Fast switching | 100 ns rise/fall times and 1050 ns storage time enable clean transitions in 1–5 MHz PWM systems with low shoot-through risk. |
Applications
| DC-DC Converter Switch | Portable Device Power Management |
|---|---|
Use Scenario: Low-side switch in 3.3 V input buck converter supplying core voltage to an SoC in a smartphone. IC Role / Device Role / Timing Role: NPN power switch operating in saturated mode during PWM on-time; driven by integrated PMU GPIO. Use Value: 0.038 V VCE(sat) reduces conduction loss to <38 mW at 1 A, extending battery runtime and minimizing thermal stress on compact PCB. |
Use Scenario: Load switch controlling power to USB peripheral circuitry in a tablet during sleep/wake cycles. IC Role / Device Role / Timing Role: Discrete high-gain NPN enabling fast turn-on/off with minimal control current from application processor. Use Value: hFE ≥ 200 allows 5 mA base drive to fully saturate at 1 A load, eliminating need for driver IC and saving board space. |
| Automotive Instrument Cluster | Low-Voltage Motor Control |
Use Scenario: Driving backlight LEDs or solenoid indicators in vehicle dashboard clusters requiring AEC-Q101 compliance. IC Role / Device Role / Timing Role: Robust, qualified NPN switch delivering regulated current pulses to indicator loads under wide temperature swing. Use Value: −55 °C to +150 °C operation and Class 3B ESD ensure reliability in harsh automotive cabin environments without derating. |
Use Scenario: H-bridge half-bridge element controlling 5 V fan or spindle motor in HDD/SSD enclosures. IC Role / Device Role / Timing Role: High-current, low-loss switching transistor handling bidirectional motor current with fast turn-off to prevent back-EMF latch-up. Use Value: 150 MHz fT and 100 ns fall time support precise PWM timing for speed regulation while limiting switching losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3006LPSQ-13 | 60 V VCEO, 3.0 A IC, SOT-23 package, VCE(sat) = 0.075 V @ 1 A - higher voltage rating but lower current and higher saturation loss. | Preferred where 60 V system margin is required and board space permits larger SOT-23 footprint; not suitable for 5 A continuous loads. | Select when overvoltage robustness outweighs conduction loss and current capacity requirements. |
| ZXTN2012ZTA | 40 V VCEO, 4.0 A IC, SOT-89 package, VCE(sat) = 0.055 V @ 1 A - same voltage rating, lower current, higher thermal resistance (RJA = 125 °C/W). | Suitable for medium-power industrial controls where SOT-89 mounting and higher thermal mass are acceptable. | Choose when legacy SOT-89 layout compatibility is mandatory and 1 A–2 A loads dominate the design. |
Compared with DMT3006LPSQ-13 and ZXTN2012ZTA, NSS40501UW3T2G delivers the lowest VCE(sat) and highest continuous current in a thermally optimized 2×2 mm WDFN3 package, making it optimal for space-constrained, high-efficiency portable and automotive power switches where 40 V rating suffices.
Availability
NSS40501UW3T2G is available at Aetrix Electronics and suitable for DC-DC converters, portable device power management, and automotive instrument cluster designs requiring stable component supply, AEC-Q101 qualification, and high-volume tape-and-reel delivery.
Supply support for NSS40501UW3T2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
NSS40501UW3T2G belongs to the e2PowerEdge family of low VCE(sat) transistors, engineered specifically for high-efficiency, low-voltage switching in battery-powered and thermally constrained applications.
FAQ
What is the maximum continuous collector current rating for NSS40501UW3T2G?
The NSS40501UW3T2G has a maximum continuous collector current (IC) rating of 5.0 A at TA = 25 °C with sufficient PCB copper area (500 mm², 1 oz). Derating applies above 25 °C at 11.8 mW/°C, and actual usable current depends on layout, ambient temperature, and thermal interface to the exposed emitter pad.
Is NSS40501UW3T2G qualified for automotive applications?
Yes, NSS40501UW3T2G is AEC-Q101 qualified and PPAP capable. It is explicitly cited in the datasheet for use in airbag deployment systems and instrument clusters, and its −55 °C to +150 °C operating range and Class 3B HBM ESD rating meet automotive reliability requirements.
What is the typical VCE(sat) of NSS40501UW3T2G at 1 A collector current?
The typical VCE(sat) of NSS40501UW3T2G is 0.038 V at IC = 1.0 A and IB = 0.100 A, with a maximum of 0.045 V under the same conditions. This ultra-low saturation voltage is confirmed in the Electrical Characteristics table and validated across temperature in Figure 1 of the datasheet.
Does NSS40501UW3T2G require a heatsink in standard PCB layouts?
No discrete heatsink is required. With the exposed emitter pad (pin 3) soldered to ≥500 mm² of 1 oz copper, NSS40501UW3T2G achieves RJA = 85 °C/W and can dissipate 1.5 W continuously. On smaller 100 mm² layouts, RJA rises to 143 °C/W, limiting usable power to ~0.875 W without additional thermal relief.
What package type does NSS40501UW3T2G use, and what are its key mechanical dimensions?
NSS40501UW3T2G uses the WDFN3 package (Case 506AU): 2.0 × 2.0 mm body, 0.75 mm max height, 0.35 mm pitch, with three terminals (collector, base, emitter/thermal pad). The exposed pad (pin 3) is essential for thermal performance and must be soldered to PCB copper per the recommended footprint in the datasheet.
NSS40501UW3T2G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 3-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 400mA, 4A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2A, 2V
- Power - Max:
- 875 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-WDFN (2x2)
NSS40501UW3T2G FAQ
1.How can I place an order for NSS40501UW3T2G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS40501UW3T2G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS40501UW3T2G reliable?
The price and inventory of NSS40501UW3T2G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS40501UW3T2G is usually 5 days.
3.What payment methods are accepted for NSS40501UW3T2G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS40501UW3T2G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS40501UW3T2G?
NSS40501UW3T2G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS40501UW3T2G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS40501UW3T2G?
For technical support, including NSS40501UW3T2G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS40501UW3T2G requirements.
6.How does Aetrix verify that NSS40501UW3T2G is sourced from the original manufacturer or authorized distributors?
All NSS40501UW3T2G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS40501UW3T2G meets industry standards.
7.What is the process for return or replacement of NSS40501UW3T2G?
All NSS40501UW3T2G units undergo pre-shipment inspection (PSI). If there is an issue with NSS40501UW3T2G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS40501UW3T2G part is unused and in its original packaging.
Return procedure for NSS40501UW3T2G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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