My Inquiry
My Account
onsemi NSS40600CF8T1G
- Part No.:
- NSS40600CF8T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
NSS40600CF8T1G.pdf
- Description:
- TRANS PNP 40V 6A CHIPFET
- Quantity:
- Payment:
- Shipping:
Inventory:970
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSS40600CF8T1G from onsemi is a PNP bipolar junction transistor (BJT) in the e2PowerEdge family, designed for high-efficiency low-voltage switching. It delivers −40 V VCEO, −7.0 A ICM, and ultra-low VCE(sat) down to −0.007 V at IC = −0.1 A / IB = −0.01 A - enabling high-current, low-loss operation in compact portable power systems.
For engineers reviewing the NSS40600CF8T1G datasheet, pinout, applications, or equivalent options, this device is selected for DC–DC converter output stages, battery-powered motor drivers, and automotive airbag deployment circuits where low saturation voltage, high current gain (hFE = 250 min at IC = −10 mA), and AEC−Q101 qualification are critical.
Technical Context
This PNP transistor operates in linear and saturated switching modes with guaranteed VCE(sat) ≤ −0.075 V at IC = −1.0 A / IB = −0.100 A and fT = 100 MHz, supporting fast turn-on/turn-off (td = 120 ns, tr = 220 ns). Its thermal design supports 1.4 W dissipation on 500 mm² copper (RJA = 90 °C/W), making it suitable for thermally constrained PCB layouts.
The device uses ChipFET package (Case 1206A, Style 4) with 8-pin leadframe layout optimized for high-current collector routing: pins 1,2,3,6,7,8 are internally bonded to collector; pin 4 is base; pin 5 is emitter. This configuration enables low-inductance, high-current paths essential for efficient switching in portable and automotive applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −40 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in 24 V and 36 V automotive and industrial supply rails. |
| ICM | −7.0 A - Peak pulsed collector current capability; supports short-duration surge loads in motor drive and airbag firing circuits. |
| VCE(sat) @ IC=−1.0 A | −0.045 V - Ultra-low saturation voltage at rated current; reduces conduction loss by >60% vs. standard PNP transistors, improving efficiency in battery-powered DC–DC converters. |
| hFE @ IC=−10 mA | 250–300 - High DC current gain enables direct drive from low-power PMU outputs without external base amplification. |
| fT | 100 MHz - Transition frequency confirms suitability for high-speed switching up to ~10 MHz with controlled rise/fall times (tr/tf ≤ 220/240 ns). |
| RJA (500 mm²) | 90 °C/W - Thermal resistance enables 1.4 W continuous power dissipation at TA = 25°C; critical for sustained operation in sealed enclosures. |
| AEC−Q101 | Qualified - Certified for automotive applications including instrument clusters and airbag control modules per stress test requirements. |
Pinout & Package
Package: ChipFET (Case 1206A, Style 4), Pb-free, surface-mount, 8-lead leadframe with exposed collector pads for thermal and current handling. Dimensions: 3.05 × 1.65 × 0.42 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 6, 7, 8 | Collector | Multiple parallel collector terminals reduce effective RDS(on)-equivalent resistance and improve current sharing; lowers thermal impedance and enhances reliability under high-current pulses. |
| 4 | Base | Single base connection optimized for low-inductance drive; compatible with standard CMOS/TTL logic-level base drive when used with appropriate current limiting. |
| 5 | Emiter | Dedicated emitter terminal provides stable reference for feedback and sensing; enables accurate current monitoring in regulated power stages. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | VCE(sat) = −0.007 V @ IC = −0.1 A - minimizes conduction loss in high-duty-cycle switching, extending battery life in portable electronics. |
| High hFE linearity | hFE ≥ 220 at IC = −1.0 A - ensures predictable analog gain behavior and stable biasing across temperature, supporting use in linear amplifier stages. |
| AEC−Q101 qualification | Validated for automotive safety-critical subsystems - permits use in airbag deployment controllers and instrument cluster backlight drivers without additional qualification effort. |
| ChipFET thermal performance | RJL = 15 °C/W (junction-to-lead #1) - enables efficient heat transfer to PCB copper, reducing hotspot temperature rise during 7 A peak pulses. |
| Pb-free & RoHS compliant | Meets JEDEC J-STD-020 reflow profile - supports lead-free manufacturing with peak solder temperature up to 260°C and compatibility with standard SMT assembly lines. |
Applications
| DC–DC Converter Output Stage | Portable Motor Driver |
|---|---|
|
Use Scenario: High-efficiency synchronous buck converter output switch in smartphone power management ICs. IC Role / Device Role / Timing Role: PNP low-side switch controlling inductor discharge path during PWM off-time. Use Value: VCE(sat) ≤ −0.045 V at −1.0 A reduces conduction loss by 0.045 W vs. conventional PNP, directly increasing conversion efficiency by 1.2–1.8% at 2 A load. |
Use Scenario: Bidirectional motor driver half-bridge in USB-powered disc drives and portable printers. IC Role / Device Role / Timing Role: High-current PNP switch enabling rapid direction reversal and stall-current limiting. Use Value: 7.0 A ICM and 100 MHz fT support 20 kHz PWM commutation with <250 ns fall time, minimizing torque ripple and audible noise. |
| Automotive Airbag Deployment | Industrial LED Backlight Driver |
|
Use Scenario: Primary ignition switch in pyrotechnic squib driver modules within airbag control units. IC Role / Device Role / Timing Role: Fast-turn-on PNP switch delivering precise 1–2 A pulse to initiate squib detonation. Use Value: td + tr = 340 ns ensures sub-microsecond activation timing, meeting ISO 26262 ASIL-B timing constraints for occupant protection. |
Use Scenario: Constant-current sink for high-brightness LED strings in industrial HMIs and medical displays. IC Role / Device Role / Timing Role: Linear-mode current regulator with thermal foldback protection. Use Value: hFE stability over −55°C to +150°C enables consistent current regulation across wide ambient ranges without recalibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MBT3906DW1T1G | Smaller SOT-363 package (0.65 × 1.25 mm), lower ICM = −200 mA, VCE(sat) = −0.4 V @ −10 mA - 56× higher saturation voltage than NSS40600CF8T1G. | Suitable only for signal-level switching or low-current bias networks; not viable for power switching above 100 mA. | Select when board space is critical and load current remains below 150 mA; avoid for any power-switching role requiring <0.1 V VCE(sat). |
| PN3565 | TO-92 through-hole package, ICM = −200 mA, VCE(sat) = −0.2 V @ −10 mA - lacks AEC−Q101 qualification and thermal performance for automotive use. | Restricted to non-automotive prototyping and low-volume industrial controls; no production-grade automotive traceability. | Choose only for cost-sensitive, non-automotive, low-current linear amplification; cannot replace NSS40600CF8T1G in power or safety-critical roles. |
Compared with MBT3906DW1T1G and PN3565, NSS40600CF8T1G uniquely combines automotive qualification, 7 A peak current, and millivolt-level VCE(sat) in a thermally optimized surface-mount package - making it irreplaceable for high-reliability, high-efficiency portable and automotive power switching.
Availability
NSS40600CF8T1G is available at Aetrix Electronics and suitable for DC–DC converters, battery-powered motor drivers, and automotive airbag control modules requiring stable component supply, long-term lifecycle support, and AEC−Q101-compliant sourcing.
Supply support for NSS40600CF8T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The e2PowerEdge family - to which NSS40600CF8T1G belongs - was engineered specifically for high-efficiency, low-voltage power switching in space-constrained portable and automotive systems, emphasizing ultra-low VCE(sat), high current gain, and robust thermal performance.
FAQ
What is the maximum continuous collector current rating for NSS40600CF8T1G?
The maximum continuous collector current (IC) for NSS40600CF8T1G is −6.0 A at TA = 25°C with adequate PCB copper area (500 mm², 1 oz). This rating assumes proper thermal management; derating applies above 25°C at 11.1 mW/°C. The device supports −7.0 A peak current (ICM) for short pulses (<10 sec), making it suitable for transient-heavy applications like motor startup and airbag firing. NSS40600CF8T1G maintains stable operation across its full −55°C to +150°C junction temperature range.
Does NSS40600CF8T1G support automotive applications?
Yes, NSS40600CF8T1G is AEC−Q101 qualified and PPAP capable, with explicit validation for automotive airbag deployment systems and instrument cluster power management. Its ChipFET package meets automotive vibration and thermal cycling requirements, and the "S" prefix variant (SNSS40600CF8T1G) provides additional site-specific control for automotive production traceability. NSS40600CF8T1G operates reliably across −40°C to +125°C ambient conditions required by automotive Grade 2 specifications.
What is the typical VCE(sat) of NSS40600CF8T1G at 3 A collector current?
At IC = −3.0 A and IB = −0.030 A, the typical VCE(sat) of NSS40600CF8T1G is −0.180 V, with a maximum of −0.250 V. This value is confirmed in the Electrical Characteristics table (page 3 of the datasheet) and reflects real-world performance under high-current switching conditions. The low saturation voltage directly translates to reduced power loss - for example, 0.54 W conduction loss at 3 A versus >1.5 W for legacy PNP transistors - enhancing thermal margin in dense PCB layouts.
How many collector terminals does NSS40600CF8T1G have, and why?
NSS40600CF8T1G has six dedicated collector terminals (pins 1, 2, 3, 6, 7, and 8), as defined in the Pin Connections diagram (page 2) and mechanical outline (page 5). This multi-terminal collector architecture reduces effective series resistance and thermal impedance, enabling higher current handling and improved heat spreading across the PCB. It also minimizes inductance in high-di/dt switching paths - a key advantage for fast-switching DC–DC converters and motor drivers where NSS40600CF8T1G is commonly deployed.
Is NSS40600CF8T1G compatible with lead-free reflow soldering processes?
Yes, NSS40600CF8T1G is Pb-free and fully compatible with standard lead-free reflow profiles, including JEDEC J-STD-020 Class 3a (peak temperature up to 260°C). Its ChipFET package is qualified for moisture sensitivity level (MSL) 1 and withstands multiple reflow cycles without degradation. The device's thermal design - including RJL = 15 °C/W - ensures reliable solder joint integrity and interconnect performance after assembly. NSS40600CF8T1G documentation explicitly references onsemi's Soldering and Mounting Techniques Reference Manual (SOLDERRM/D) for process guidance.
NSS40600CF8T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 6 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 220mV @ 400mA, 4A
- Current - Collector Cutoff (Max):
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 220 @ 1A, 2V
- Power - Max:
- 830 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ChipFET™
NSS40600CF8T1G FAQ
1.How can I place an order for NSS40600CF8T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS40600CF8T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS40600CF8T1G reliable?
The price and inventory of NSS40600CF8T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS40600CF8T1G is usually 5 days.
3.What payment methods are accepted for NSS40600CF8T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS40600CF8T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS40600CF8T1G?
NSS40600CF8T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS40600CF8T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS40600CF8T1G?
For technical support, including NSS40600CF8T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS40600CF8T1G requirements.
6.How does Aetrix verify that NSS40600CF8T1G is sourced from the original manufacturer or authorized distributors?
All NSS40600CF8T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS40600CF8T1G meets industry standards.
7.What is the process for return or replacement of NSS40600CF8T1G?
All NSS40600CF8T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS40600CF8T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS40600CF8T1G part is unused and in its original packaging.
Return procedure for NSS40600CF8T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSS40600CF8T1G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
