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onsemi NSS40601CF8T1G
- Part No.:
- NSS40601CF8T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
NSS40601CF8T1G.pdf
- Description:
- TRANS NPN 40V 6A CHIPFET
- Quantity:
- Payment:
- Shipping:
Inventory:9,836
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Product details
Overview
NSS40601CF8T1G from onsemi is a 40 V, 8.0 A NPN low-saturation-voltage transistor in ChipFET (CASE 1206A) package, featuring VCE(sat) = 31 mV at IC = 1.0 A / IB = 0.1 A, hFE = 200–395, and fT = 140 MHz - designed for high-efficiency DC–DC converters and battery-powered motor control in portable electronics.
For engineers reviewing the NSS40601CF8T1G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low VCE(sat), high current gain linearity, thermal performance on 500 mm² copper, and compatibility with PMU-driven base drive in space-constrained power stages.
Technical Context
This e2PowerEdge NPN transistor uses optimized epitaxial base design to achieve both low saturation voltage and stable high-current gain across temperature (−55°C to +150°C). Its 140 MHz fT supports fast switching in PWM-controlled power stages up to several hundred kHz.
The device operates in linear and saturated modes with defined VBE(sat) (0.76 V typ.) and VBE(on) (0.72 V typ.), enabling predictable turn-on behavior in analog amplifiers and digital switching applications where base drive simplicity is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum collector-emitter blocking voltage under open-base condition; defines safe operating range in 3.3 V/5 V/12 V rail switching. |
| IC (cont.) | 6.0 A - Continuous collector current rating at TA = 25°C with 500 mm² copper; sets steady-state power stage capacity. |
| VCE(sat) | 31 mV @ IC = 1.0 A / IB = 0.1 A - Ultra-low conduction loss enables >95% efficiency in compact DC–DC buck stages. |
| hFE | 200–395 - High and linear DC current gain across 10 mA–3 A; allows direct drive from low-current PMU outputs without buffer stages. |
| fT | 140 MHz - Transition frequency confirming suitability for high-speed switching (e.g., >200 kHz PWM) with minimal phase lag. |
| RJA | 90 °C/W - Junction-to-ambient thermal resistance on 500 mm² PCB; enables 1.4 W dissipation at TA = 25°C without forced cooling. |
Pinout & Package
Package: ChipFET (CASE 1206A), surface-mount, Pb-free, 8-pin leadframe with exposed drain pad (pin 1–3, 6–8 = collector; pin 4 = base; pin 5 = emitter).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 6, 7, 8 | Collector | High-current output node; electrically tied internally; provides low-inductance parallel path for 8 A peak current handling. |
| 4 | Base | Control input; requires 100 mA drive for full saturation at 1 A load; compatible with standard GPIO or PMU output drivers. |
| 5 | Emiter | Reference node for base-emitter bias; connected to ground or low-side return path; forms common-emitter switching topology. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 31 mV at 1 A - reduces conduction loss by >50% vs. standard NPNs, directly improving thermal margin in sealed enclosures. |
| Linear hFE curve | 200–395 over 10 mA–3 A - enables accurate analog gain setting and stable feedback in linear regulator pass elements. |
| High fT | 140 MHz - ensures fast turn-on/turn-off (tr/tf ≤ 130 ns) for clean PWM edges and reduced EMI in noise-sensitive audio systems. |
| Thermal robustness | RJL = 15 °C/W - low junction-to-lead resistance allows efficient heat transfer to PCB copper, supporting continuous 1.4 W operation. |
Applications
| Portable DC–DC Converters | Battery-Powered Motor Control |
|---|---|
Use Scenario: Step-down conversion in smartphones and digital cameras using 3.7 V Li-ion input to generate 1.2 V core logic supply. IC Role / Device Role / Timing Role: Main switch transistor in synchronous buck converter topology, operating at 500 kHz–2 MHz. Use Value: 31 mV VCE(sat) minimizes I²R losses, extending battery runtime by up to 8% versus conventional transistors at 2 A load. | Use Scenario: Low-voltage bidirectional motor driver in USB-powered portable hard drives and optical disc mechanisms. IC Role / Device Role / Timing Role: High-side or low-side switching element controlling 5–12 V brushed DC motors with 1–3 A stall current. Use Value: Linear hFE and low VCE(sat) enable precise current regulation and <100 mW thermal rise at full load on compact 2-layer PCBs. |
| Automotive Instrument Clusters | Analog Signal Amplification |
Use Scenario: Power management for LCD backlight dimming and stepper motor actuation in automotive dashboards. IC Role / Device Role / Timing Role: PWM-controlled current sink for LED strings and gate driver for small solenoids. Use Value: −55°C to +150°C operating range and HBM Class 3B ESD rating ensure reliability in unheated/under-hood environments. | Use Scenario: Small-signal preamplifier stage in portable medical sensors and audio codec interfaces. IC Role / Device Role / Timing Role: Linear-mode amplifier with fixed bias network, delivering 20 dB voltage gain at 10 kHz. Use Value: Stable hFE across temperature and low VBE(on) (0.72 V) simplify bias design and reduce quiescent current drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6009LPS-13 | 60 V VDS, 9.5 A MOSFET; RDS(on) = 11.5 mΩ @ 4.5 V; gate-driven, not base-driven. | Requires level-shifted gate drive; better for >100 kHz switching but adds complexity in low-cost PMU-integrated designs. | Choose when higher voltage margin and zero gate current are prioritized over direct PMU compatibility. |
| ZXTN2012ZTA | 40 V VCEO, 6 A IC, VCE(sat) = 45 mV @ 1 A; SOT-23 package; lower thermal mass. | Limited to <0.8 W dissipation; unsuitable for sustained >1.5 A loads without derating. | Choose for space-constrained, low-power (<500 mW) applications where ChipFET footprint is prohibitive. |
Compared with DMT6009LPS-13 and ZXTN2012ZTA, the NSS40601CF8T1G uniquely balances ultra-low VCE(sat), high-current capability, and direct base-drive compatibility - making it optimal for cost-sensitive, thermally constrained DC–DC and motor control stages where gate drive circuitry must be minimized.
Availability
NSS40601CF8T1G is available at Aetrix Electronics and suitable for portable DC–DC converters, battery-powered motor control, and automotive instrument cluster power management requiring stable component supply, Pb-free compliance, and traceable sourcing.
Supply support for NSS40601CF8T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The e2PowerEdge family - including the NSS40601CF8T1G - was engineered specifically for high-efficiency, low-voltage switching in portable and battery-operated systems where thermal density and drive simplicity are critical.
FAQ
What is the maximum continuous collector current rating for the NSS40601CF8T1G?
The NSS40601CF8T1G has a maximum continuous collector current (IC) rating of 6.0 A at TA = 25°C with 500 mm² copper PCB area. At elevated ambient temperatures or reduced copper area, this rating must be derated per the 11.1 mW/°C slope specified in Note 2 of the thermal characteristics table. The device supports 8.0 A peak current (ICM) under pulsed conditions.
Does the NSS40601CF8T1G support operation in linear (analog) amplifier configurations?
Yes, the NSS40601CF8T1G supports linear operation due to its stable, linear hFE curve (200–395) across 10 mA–3 A and well-defined VBE(on) (0.72 V typ.) and VBE(sat) (0.76 V typ.). These characteristics enable predictable biasing and gain stability in analog amplifier stages, as confirmed in the device's Electrical Characteristics table and Figure 3.
What is the thermal resistance of the NSS40601CF8T1G on a standard PCB layout?
The NSS40601CF8T1G exhibits RJA = 90 °C/W when mounted on FR-4 PCB with 500 mm² of 1 oz copper (Note 2), enabling 1.4 W total device dissipation at TA = 25°C. With only 100 mm² copper (Note 1), RJA rises to 150 °C/W, limiting usable power to 830 mW - a critical layout consideration for thermal design.
Is the NSS40601CF8T1G pin-compatible with other ChipFET-packaged transistors?
The NSS40601CF8T1G uses Style 4 pinout (pins 1–3,6–8 = collector; pin 4 = base; pin 5 = emitter) per the official marking diagram. While other ChipFET devices share the CASE 1206A footprint, pin assignments vary by function (e.g., Style 1 is MOSFET drain/gate/source). Direct substitution requires verification of both pinout and electrical specs - no generic pin-compatibility exists across styles.
What does the "CF8" in NSS40601CF8T1G indicate?
The "CF8" in NSS40601CF8T1G denotes the specific e2PowerEdge product variant within onsemi's ChipFET family, identifying the 40 V/8 A NPN transistor with ultra-low VCE(sat) and linear hFE characteristics. It appears in the ordering part number (NSS40601CF8/D) and correlates to the device's marking code "C" on the package top surface.
NSS40601CF8T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 6 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 135mV @ 400mA, 4A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 1A, 2V
- Power - Max:
- 830 mW
- Frequency - Transition:
- 140MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ChipFET™
NSS40601CF8T1G FAQ
1.How can I place an order for NSS40601CF8T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS40601CF8T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS40601CF8T1G reliable?
The price and inventory of NSS40601CF8T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS40601CF8T1G is usually 5 days.
3.What payment methods are accepted for NSS40601CF8T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS40601CF8T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS40601CF8T1G?
NSS40601CF8T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS40601CF8T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS40601CF8T1G?
For technical support, including NSS40601CF8T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS40601CF8T1G requirements.
6.How does Aetrix verify that NSS40601CF8T1G is sourced from the original manufacturer or authorized distributors?
All NSS40601CF8T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS40601CF8T1G meets industry standards.
7.What is the process for return or replacement of NSS40601CF8T1G?
All NSS40601CF8T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS40601CF8T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS40601CF8T1G part is unused and in its original packaging.
Return procedure for NSS40601CF8T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSS40601CF8T1G Tags
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MMBT3906LT1G
onsemi
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MMBT3906-7-F
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Micro Commercial Co
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BC846BLT1G
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BC847B,215
Nexperia USA Inc.
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SMMBT3904LT1G
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