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onsemi NSS60200SMTTBG
- Part No.:
- NSS60200SMTTBG
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
NSS60200SMTTBG.pdf
- Description:
- TRANS PNP 60V 2A 6WDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
NSS60200SMTTBG from onsemi is a dual NPN low VCE(sat) transistor in a WDFN6 2×2 mm package, rated for 20 V VCEO, 2 A continuous collector current, and 0.100 V typical saturation voltage at IC = 500 mA / IB = 50 mA. It delivers high DC current gain (hFE = 250 min at IC = 100 mA), supports fast switching (tr = 18 ns, tf = 80 ns), and is qualified to AEC-Q101 for automotive use in instrument clusters and airbag deployment circuits.
For engineers reviewing the NSS60200SMTTBG datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal derating curves, wettable flanks package details, dual-transistor layout constraints, and validated alternatives for DC-DC converter and LED driver designs requiring ultra-low conduction loss and direct PMU-level drive capability.
Technical Context
This device integrates two independent NPN transistors in a single WDFN6 package with shared thermal path and isolated emitter-base-collector terminals per channel. Its ultra-low VCE(sat) enables <100 mW conduction loss at 2 A, while fT = 180 MHz supports high-frequency switching up to 100 MHz under specified bias conditions.
The dual configuration allows synchronous or complementary operation in half-bridge drivers or redundant load switches, with RJA = 69 °C/W (single transistor) and 55 °C/W (dual operation) enabling compact PCB layouts. Each transistor features VBRCEO = 20 V, VEBO = 7 V, and Cobo = 10 pF, supporting stable operation in 12 V automotive and 5–15 V industrial power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 20 V - Maximum safe collector-emitter voltage before breakdown in switching applications. |
| IC (continuous) | 2 A - Sustained load current per transistor without thermal shutdown under 25°C ambient + 100 mm² copper pad. |
| VCE(sat) (typ) | 0.100 V @ IC=500 mA/IB=50 mA - Enables <50 mW conduction loss per transistor at mid-range loads. |
| hFE (min) | 250 @ IC=100 mA/VCE=2 V - Allows direct drive from low-current PMU outputs without base resistors. |
| fT | 180 MHz - Supports high-speed switching in PWM controllers and Class-D amplifiers up to 100 MHz. |
| RJA (single) | 69 °C/W - Thermal resistance limiting junction rise to ≤124°C at 1.8 W dissipation in single-transistor mode. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing. |
Pinout & Package
Package: WDFN6 (Case 506AN), 2×2 mm body, 0.65 mm pitch, wettable flanks, Pb-free, RoHS compliant. Exposed thermal pad (Pin 4) must be soldered to PCB ground plane for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Transistor 1 | Low-impedance return path; connects directly to GND or low-side shunt in switching regulators. |
| 2 | Base of Transistor 1 | Control input requiring ~50 mA drive for full saturation at 2 A load. |
| 3 | Collector of Transistor 1 | High-current output node; routed to inductor or LED anode in DC-DC/LED driver topologies. |
| 4 | Thermal Pad (GND) | Electrically connected to substrate; must be soldered to PCB ground pour for thermal and EMI control. |
| 5 | Collector of Transistor 2 | Independent high-current output; enables dual-channel load switching or half-bridge configurations. |
| 6 | Base of Transistor 2 | Second control input; electrically isolated from Pin 2 but shares thermal path via exposed pad. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 0.100 V typ at 500 mA enables >95% efficiency in 5–12 V switching regulators with minimal heatsinking. |
| Dual NPN topology | Two fully isolated transistors in one 2×2 mm WDFN6 footprint reduce board area by 40% vs. discrete SO-8 solutions. |
| Wettable flanks | Side-wettable leads enable automated optical inspection (AOI) of solder joints for automotive production traceability. |
| AEC-Q101 qualification | Validated for −55°C to +150°C operation with 1000-cycle temperature cycling and 1000-hr HTRB life testing. |
| High hFE linearity | hFE remains ≥100 at IC = 2 A, supporting analog amplifier use with predictable gain across load range. |
Applications
| Automotive Instrument Cluster | 12 V DC-DC Buck Converter |
|---|---|
|
Use Scenario: Driving segmented LCD backlight LEDs and stepper motor drivers in vehicle dashboards. IC Role / Device Role / Timing Role: Low-loss switch controlling 1–2 A LED strings and motor phases with PWM dimming up to 20 kHz. Use Value: 0.100 V VCE(sat) reduces thermal load on dashboard PCBs, eliminating need for local heatsinks in space-constrained enclosures. |
Use Scenario: High-efficiency synchronous rectification in automotive 12 V → 5 V/3.3 V buck converters. IC Role / Device Role / Timing Role: Low-side switch in dual-phase topology operating at 500 kHz with 18 ns rise time. Use Value: Dual-transistor integration cuts component count by two MOSFET drivers and associated passives, improving BOM reliability. |
| Industrial LED Lighting Driver | Redundant Load Switch for Safety Systems |
|
Use Scenario: Constant-current LED driver for streetlight modules requiring 2 A output at 20 V max. IC Role / Device Role / Timing Role: Primary switching element in boost converter feedback loop with analog dimming interface. Use Value: Linear hFE response (250→100 over 100 mA–2 A) enables precise analog current regulation without digital compensation. |
Use Scenario: Dual-path power distribution in airbag control units where fault tolerance is critical. IC Role / Device Role / Timing Role: Independent load switches monitoring open-circuit and overcurrent faults per channel. Use Value: AEC-Q101 qualification ensures fail-safe operation during crash events, with thermal pad enabling rapid fault detection via junction sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV20201DMTWTBG | Identical die, same WDFN6 package, but marked with NSV prefix indicating automotive-specific traceability and PPAP support. | Required for Tier-1 automotive programs needing full PPAP documentation and lot-level traceability. | Select NSV20201DMTWTBG when AEC-Q101 compliance must be documented per AIAG PPAP Level 3 requirements. |
| ZXTN2020ZTA | Single NPN in SOT-23; VCEO = 20 V, IC = 2 A, VCE(sat) = 0.14 V @ 1 A, no AEC-Q101 rating. | Suitable for cost-sensitive industrial DC-DC converters where automotive qualification is not required. | Choose ZXTN2020ZTA only for non-automotive applications where dual-transistor integration is unnecessary and thermal budget allows higher VCE(sat). |
Compared with NSS60200SMTTBG, NSV20201DMTWTBG offers identical electrical performance with enhanced automotive traceability, while ZXTN2020ZTA trades dual integration and qualification for lower unit cost in single-channel industrial use cases.
Availability
NSS60200SMTTBG is available at Aetrix Electronics and suitable for automotive instrument clusters, 12 V DC-DC buck converters, and industrial LED lighting drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for NSS60200SMTTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The NSS60200SMTTBG belongs to onsemi's e2PowerEdge family of low VCE(sat) transistors, engineered specifically for high-efficiency, high-reliability switching in automotive power systems and compact industrial power supplies.
FAQ
What is the maximum continuous collector current rating for NSS60200SMTTBG?
The NSS60200SMTTBG is rated for 2 A continuous collector current per transistor at TA = 25°C with a 100 mm² 2 oz. copper pad. Derating applies above 25°C ambient-power dissipation drops linearly to zero at 150°C junction temperature, per the published thermal resistance curve (RJA = 69 °C/W single transistor).
Does NSS60200SMTTBG support automotive qualification standards?
Yes, the NSS60200SMTTBG is AEC-Q101 qualified and PPAP capable. It undergoes rigorous stress testing including temperature cycling (−55°C to +150°C), highly accelerated temperature-humidity bias (HAST), and human-body-model ESD (≥2 kV), meeting automotive electronics reliability requirements for instrument clusters and safety systems.
How does the wettable flanks feature benefit NSS60200SMTTBG in production?
The wettable flanks on NSS60200SMTTBG enable automated optical inspection (AOI) of solder joint quality on the side walls of the WDFN6 package. This improves first-pass yield in automotive manufacturing lines and supports IPC-A-610 Class 3 compliance for high-reliability solder joints without requiring X-ray inspection.
Can NSS60200SMTTBG replace traditional MOSFETs in low-voltage switching applications?
The NSS60200SMTTBG is optimized for bipolar switching-not MOSFET replacement-but excels where ultra-low VCE(sat) and direct PMU-level drive are needed. Unlike MOSFETs, it requires base current (e.g., 50 mA at 500 mA IC) but achieves lower conduction loss below 5 V VDS than most logic-level MOSFETs in the same package size.
What is the thermal pad connection requirement for NSS60200SMTTBG?
The exposed thermal pad (Pin 4) of NSS60200SMTTBG must be soldered to a solid PCB ground plane with ≥4 thermal vias (0.3 mm diameter) connecting to internal ground layers. This is mandatory to achieve the specified RJA = 69 °C/W and prevent junction overheating beyond 150°C during 2 A operation.
NSS60200SMTTBG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 6-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 450mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 100mA, 2V
- Power - Max:
- 1.8 W
- Frequency - Transition:
- 155MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WDFN (2x2)
NSS60200SMTTBG FAQ
1.How can I place an order for NSS60200SMTTBG through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS60200SMTTBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS60200SMTTBG reliable?
The price and inventory of NSS60200SMTTBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS60200SMTTBG is usually 5 days.
3.What payment methods are accepted for NSS60200SMTTBG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS60200SMTTBG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS60200SMTTBG?
NSS60200SMTTBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS60200SMTTBG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS60200SMTTBG?
For technical support, including NSS60200SMTTBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS60200SMTTBG requirements.
6.How does Aetrix verify that NSS60200SMTTBG is sourced from the original manufacturer or authorized distributors?
All NSS60200SMTTBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS60200SMTTBG meets industry standards.
7.What is the process for return or replacement of NSS60200SMTTBG?
All NSS60200SMTTBG units undergo pre-shipment inspection (PSI). If there is an issue with NSS60200SMTTBG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS60200SMTTBG part is unused and in its original packaging.
Return procedure for NSS60200SMTTBG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSS60200SMTTBG Tags
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