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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSS60600MZ4T3G

Name: NSS60600MZ4T3G
Brand: onsemi
SKU: NSS60600MZ4T3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSS60600MZ4T3G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: NSS60600MZ4T3G.pdf

Description:: TRANS PNP 60V 6A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NSS60600MZ4T3G from onsemi is a PNP bipolar junction transistor engineered for high-efficiency, low-voltage switching in power management circuits. It delivers −60 V V_CEO, −6.0 A continuous collector current, and ultra-low V_CE(sat) of −0.050 V at I_C = −0.1 A / I_B = −2.0 mA - enabling minimal conduction loss in DC-DC converters and battery-powered portable electronics.

For engineers reviewing the NSS60600MZ4T3G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SOT-223 thermal performance (R_JA = 64 °C/W with 645 mm² copper), −60 V breakdown rating, and direct drive compatibility with PMU control outputs due to high h_FE (min 70 at I_C = −6.0 A).

Technical Context

This device belongs to onsemi's e2PowerEdge family of low-saturation-voltage transistors, optimized for fast switching with t_d = 100 ns, t_r = 180 ns, t_s = 540 ns, and t_f = 145 ns under −30 V V_CC and 750 mA I_C. Its linear gain (h_FE) supports analog amplifier use, while f_T = 100 MHz enables RF-adjacent signal handling.

The NSS60600MZ4T3G operates across −55 °C to +150 °C, features Pb-free/Halogen-free construction per RoHS, and meets AEC-Q101 for automotive applications including airbag deployment and instrument clusters. Its complementary pairing with NSS60601MZ4 allows matched PNP/NPN design in H-bridge or dual-rail topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V - Withstands up to −60 V collector-emitter voltage before breakdown, suitable for 48 V system rails and automotive battery transients.
I_C (Continuous)	−6.0 A - Supports high-current load switching without derating at T_A ≤ 25 °C with 645 mm² copper PCB area.
V_CE(sat)	−0.050 V @ I_C = −0.1 A / I_B = −2.0 mA - Enables <10 mW conduction loss at light loads, critical for standby efficiency.
h_FE	70 min @ I_C = −6.0 A / V_CE = −2.0 V - Ensures reliable saturation with modest base drive, reducing PMU output current burden.
f_T	100 MHz - Supports high-frequency switching control loops and moderate-speed signal amplification.
R_JA	64 °C/W - Achieved with FR-4 board and 645 mm² 1 oz. copper, enabling 2.0 W dissipation at T_A = 25 °C.

Pinout & Package

SOT-223 (Case 318E, Style 1) surface-mount package with integrated heat sink tab (Pin 2 and Pin 4 both connected to collector). Thermal resistance optimized for high-power density layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring −2.0 mA base current for 0.1 A collector switching; compatible with standard logic-level PMU outputs.
2	Collector	Main high-side current path; electrically tied to Pin 4 for enhanced thermal conduction and current sharing.
3	Emitter	Common reference node; connects to system ground or negative rail in high-side switch configurations.
4	Collector	Duplicate collector terminal for mechanical stability and improved heat spreading into PCB copper pour.

Key Features

Feature	Design Value
Ultra-low V_CE(sat)	−0.050 V at light load reduces conduction loss by >50% vs. standard PNP transistors, extending battery life in portable devices.
High h_FE linearity	h_FE = 150–360 across 0.01–1.0 A range enables stable analog gain and predictable digital switching thresholds.
AEC-Q101 qualified	Validated for automotive safety-critical subsystems including airbag deployment circuits and instrument cluster power stages.
SOT-223 thermal design	64 °C/W R_JA with standard layout allows 2.0 W continuous operation - double typical SOT-23 capability.

Applications

DC-DC Converters	Portable Power Management
Use Scenario: Step-down (buck) converter in smartphone power tree regulating core SoC voltage from 3.7 V Li-ion battery. IC Role / Device Role / Timing Role: High-side PNP switch controlling energy transfer during PWM on-time; driven directly by PMU GPIO. Use Value: −0.050 V V_CE(sat) minimizes dropout and improves light-load efficiency by reducing I²R loss at 500 mA typical load.	Use Scenario: Load switch enabling/disabling USB peripheral power in tablet docking station. IC Role / Device Role / Timing Role: Low-loss PNP pass element activated by microcontroller I/O; handles up to −6.0 A peak inrush. Use Value: 70 min h_FE ensures full saturation with ≤10 mA base drive, eliminating need for external driver stage.
Automotive Instrument Clusters	Low-Voltage Motor Control
Use Scenario: Backlight dimming circuit powering LED arrays in digital dashboard displays. IC Role / Device Role / Timing Role: Constant-current PNP switch modulated via PWM from MCU timer channel. Use Value: 100 MHz f_T supports clean 20 kHz PWM edges without ringing, preventing visible LED flicker.	Use Scenario: Directional control in 5 V stepper motor driver for optical disc tray actuator. IC Role / Device Role / Timing Role: One quadrant of H-bridge providing bidirectional current path with low forward drop. Use Value: −60 V V_CEO withstands inductive kickback spikes up to −45 V, eliminating need for external clamping diodes.

DC-DC Converters

Portable Power Management

Use Scenario: Step-down (buck) converter in smartphone power tree regulating core SoC voltage from 3.7 V Li-ion battery.

IC Role / Device Role / Timing Role: High-side PNP switch controlling energy transfer during PWM on-time; driven directly by PMU GPIO.

Use Value: −0.050 V V_CE(sat) minimizes dropout and improves light-load efficiency by reducing I²R loss at 500 mA typical load.

Use Scenario: Load switch enabling/disabling USB peripheral power in tablet docking station.

IC Role / Device Role / Timing Role: Low-loss PNP pass element activated by microcontroller I/O; handles up to −6.0 A peak inrush.

Use Value: 70 min h_FE ensures full saturation with ≤10 mA base drive, eliminating need for external driver stage.

Automotive Instrument Clusters

Low-Voltage Motor Control

Use Scenario: Backlight dimming circuit powering LED arrays in digital dashboard displays.

IC Role / Device Role / Timing Role: Constant-current PNP switch modulated via PWM from MCU timer channel.

Use Value: 100 MHz f_T supports clean 20 kHz PWM edges without ringing, preventing visible LED flicker.

Use Scenario: Directional control in 5 V stepper motor driver for optical disc tray actuator.

IC Role / Device Role / Timing Role: One quadrant of H-bridge providing bidirectional current path with low forward drop.

Use Value: −60 V V_CEO withstands inductive kickback spikes up to −45 V, eliminating need for external clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	Higher V_CEO (−100 V), lower h_FE (20–100), larger TO-220 package, R_JA = 50 °C/W (with heatsink only)	Better suited for industrial 100 V bus systems; requires heatsink for >1.5 A continuous operation	Select when higher breakdown margin is required and board space allows TO-220 mounting
ZTX951	Lower I_C (−3 A), higher V_CE(sat) (−0.25 V @ −2 A), SOT-223 package, R_JA = 80 °C/W	Targeted at cost-sensitive consumer audio amplifiers and low-power logic interfaces	Select when budget constraints outweigh efficiency needs and load current stays below −3 A

Compared with MJD127G and ZTX951, the NSS60600MZ4T3G uniquely balances −6.0 A current, −60 V rating, ultra-low −0.050 V saturation, and SOT-223 thermal performance - making it optimal for space-constrained, high-efficiency portable and automotive power switches where base drive simplicity and thermal headroom are critical.

Availability

NSS60600MZ4T3G is available at Aetrix Electronics and suitable for DC-DC converters, portable power management, and automotive instrument clusters requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for NSS60600MZ4T3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The NSS60600MZ4T3G belongs to the e2PowerEdge family - designed specifically for high-current, low-saturation-voltage switching in battery-powered and automotive power systems where thermal efficiency and drive simplicity are essential.

FAQ

What is the maximum continuous collector current rating for the NSS60600MZ4T3G?

The NSS60600MZ4T3G is rated for −6.0 A continuous collector current (I_C) at T_A = 25 °C with 645 mm² of 1 oz. copper on FR-4 PCB. Derating applies above 25 °C at 15.6 mW/°C, supporting up to −3.5 A at 85 °C ambient under the same layout conditions. This rating is confirmed in the "Maximum Ratings" table on page 1 of the official onsemi datasheet.

Is the NSS60600MZ4T3G suitable for automotive applications?

Yes, the NSS60600MZ4T3G is AEC-Q101 qualified and PPAP capable, with NSV-prefix variants explicitly designated for automotive use. It is deployed in airbag deployment circuits and instrument cluster power stages, operating reliably across −55 °C to +150 °C junction temperature. The NSS60600MZ4T3G itself carries the standard NSS prefix but shares identical die and qualification data per onsemi documentation.

What is the pin configuration and package type of the NSS60600MZ4T3G?

The NSS60600MZ4T3G uses the SOT-223 (Case 318E, Style 1) package with four terminals: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (tied internally to Pin 2). The exposed collector tab serves as both electrical connection and primary thermal path to the PCB. This configuration is shown in the "Top View Pinout" diagram on page 1 of the datasheet.

Does the NSS60600MZ4T3G have a complementary NPN counterpart?

Yes, the NSS60600MZ4T3G is explicitly paired with the NSS60601MZ4 - a matching NPN transistor in the same e2PowerEdge family. Both share identical voltage ratings (60 V), current capability (6.0 A), thermal characteristics (R_JA = 64 °C/W), and SOT-223 packaging, enabling symmetrical design in push-pull, H-bridge, and dual-rail applications without layout rework.

What is the typical V_CE(sat) of the NSS60600MZ4T3G at full load?

At full rated load (I_C = −6.0 A, I_B = −0.6 A), the NSS60600MZ4T3G exhibits a typical V_CE(sat) of −0.250 V and a maximum of −0.350 V, as specified in the "ON CHARACTERISTICS" table on page 3 of the datasheet. This value ensures <1.5 W conduction loss at maximum current, critical for thermally constrained portable designs.

NSS60600MZ4T3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 6 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 350mV @ 600mA, 6A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 1A, 2V

Power - Max:: 800 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223 (TO-261)

NSS60600MZ4T3G FAQ

1.How can I place an order for NSS60600MZ4T3G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS60600MZ4T3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS60600MZ4T3G reliable?

The price and inventory of NSS60600MZ4T3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS60600MZ4T3G is usually 5 days.

3.What payment methods are accepted for NSS60600MZ4T3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS60600MZ4T3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS60600MZ4T3G?

NSS60600MZ4T3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS60600MZ4T3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS60600MZ4T3G?

For technical support, including NSS60600MZ4T3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS60600MZ4T3G requirements.

6.How does Aetrix verify that NSS60600MZ4T3G is sourced from the original manufacturer or authorized distributors?

All NSS60600MZ4T3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS60600MZ4T3G meets industry standards.

7.What is the process for return or replacement of NSS60600MZ4T3G?

All NSS60600MZ4T3G units undergo pre-shipment inspection (PSI). If there is an issue with NSS60600MZ4T3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS60600MZ4T3G part is unused and in its original packaging.

Return procedure for NSS60600MZ4T3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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