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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NST1602CLTWG

Name: NST1602CLTWG
Brand: onsemi
SKU: NST1602CLTWG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NST1602CLTWG

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SOT-1205, 8-LFPAK56

Datasheet:: NST1602CLTWG.pdf

Description:: TRANS NPN 160V 1.5A 8-LFPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NST1602CLTWG from onsemi is a low-saturation-voltage NPN bipolar junction transistor rated for 160 V V_CEO, 1.5 A continuous collector current, and 0.04–0.08 V V_CE(sat) at I_C = 250 mA / I_B = 25 mA. It features high-speed switching (t_on = 30 ns, t_f = 30 ns), AEC-Q101 qualification, and operates up to 175 °C junction temperature. It is used in automotive load switching and gate driver buffering.

For engineers reviewing the NST1602CLTWG datasheet, pinout, applications, or equivalent options, key selection criteria include its LFPAK8 package thermal performance, low V_CE(sat) under high-current drive, AEC-Q101 compliance, and validated safe operating area up to 100 V / 2 A in pulsed operation.

Technical Context

This device is a single NPN BJT optimized for high-current, low-loss switching in automotive power stages. Its design emphasizes minimal conduction loss via ultra-low V_CE(sat) (as low as 0.035 V at I_C = 250 mA / I_B = 50 mA) and fast transition times enabled by f_T = 100 MHz and C_ob = 10 pF at 10 V.

The LFPAK8 3.3 × 3.3 mm package enables high power dissipation (2.2 W with 1 in² copper pad) while maintaining thin-profile mounting. It supports robust operation across −55 °C to +175 °C ambient, with guaranteed breakdown voltages of V_(BR)CBO = 180 V and V_(BR)CEO = 160 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	160 V - Maximum allowable collector-emitter voltage before breakdown; defines upper rail limit in DC-DC and load switch designs.
I_C (continuous)	1.5 A - Continuous collector current rating; determines maximum steady-state load current capability.
V_CE(sat) (typ)	0.04 V at I_C = 250 mA / I_B = 25 mA - Low saturation voltage minimizes conduction loss and self-heating in high-duty-cycle switching.
f_T	100 MHz - Gain-bandwidth product enabling reliable operation in high-frequency gate driving and PWM control loops.
t_on/t_f	30 ns / 30 ns - Fast switching transitions reduce switching losses and EMI generation in power conversion stages.
P_C (max, 1 in² Cu)	2.2 W - Thermal power handling with standard PCB copper area; supports compact, thermally constrained automotive modules.
T_J (max)	175 °C - High junction temperature rating ensures reliability in under-hood automotive environments.

Pinout & Package

Package: LFPAK8 (Case 760AD), 3.3 mm × 3.3 mm footprint, 0.65 mm pitch, thin-profile surface-mount package with exposed drain pad for enhanced thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal	Low-impedance return path; electrically and thermally connected to exposed pad for optimal heat transfer.
2 (Base)	Control input	Current-driven gate; requires precise I_B ≥ I_C/10 for full saturation and minimal V_CE(sat).
3 (Collector)	High-side power output	Main current-carrying terminal; connects to load or switching node; tied to exposed pad for thermal and electrical grounding.
Exposed Pad	Collector (internally connected)	Integral part of collector terminal; must be soldered to large copper area for thermal management and current capacity.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, body electronics, and ADAS power stages.
Ultra-low V_CE(sat)	0.035 V min at I_C = 250 mA / I_B = 50 mA - reduces I²R losses by >60% vs. standard BJTs at same current.
LFPAK8 thermal performance	2.2 W power dissipation with 1 in² 2 oz copper - enables smaller heatsinks and higher power density in space-constrained modules.
High-speed switching	30 ns turn-on/turn-off - supports PWM frequencies up to 5 MHz without significant timing distortion or loss penalty.
Pb-free, Halogen-free	RoHS-compliant construction with "G" marking - meets global environmental regulations and automotive ELV requirements.

Applications

Load Switch	Gate Driver Buffer
Use Scenario: Controlling 12 V/24 V battery-fed loads such as fans, solenoids, or lighting in automotive body control modules. IC Role / Device Role / Timing Role: NPN BJT configured as low-side switch; driven directly by microcontroller GPIO or level-shifted logic. Use Value: Ultra-low V_CE(sat) limits voltage drop and self-heating at 1.5 A, enabling compact PCB layout without forced air cooling.	Use Scenario: Boosting drive strength for high-capacitance MOSFET gates in motor drivers or DC-DC controllers. IC Role / Device Role / Timing Role: Current amplifier stage between logic-level controller and power MOSFET gate. Use Value: 100 MHz f_T and 30 ns switching ensure accurate pulse fidelity and minimal gate charge delay in 100 kHz–1 MHz PWM systems.
DC-DC Converter	Automotive Power Distribution
Use Scenario: Synchronous rectifier or primary-side switch in non-isolated buck converters for infotainment or ADAS subsystems. IC Role / Device Role / Timing Role: High-current, low-loss switching element operating in hard-switched or quasi-resonant topologies. Use Value: 160 V V_CEO and 175 °C T_J support operation across wide input ranges (e.g., 9–36 V automotive) and high ambient temperatures.	Use Scenario: Smart fuse replacement in centralized power distribution units (PDUs) for vehicle electrification. IC Role / Device Role / Timing Role: Protected high-side or low-side switch with overcurrent detection interface. Use Value: AEC-Q101 qualification and 2.2 W thermal rating allow integration into sealed, convection-cooled PDUs without derating.

Load Switch

Gate Driver Buffer

Use Scenario: Controlling 12 V/24 V battery-fed loads such as fans, solenoids, or lighting in automotive body control modules.

IC Role / Device Role / Timing Role: NPN BJT configured as low-side switch; driven directly by microcontroller GPIO or level-shifted logic.

Use Value: Ultra-low V_CE(sat) limits voltage drop and self-heating at 1.5 A, enabling compact PCB layout without forced air cooling.

Use Scenario: Boosting drive strength for high-capacitance MOSFET gates in motor drivers or DC-DC controllers.

IC Role / Device Role / Timing Role: Current amplifier stage between logic-level controller and power MOSFET gate.

Use Value: 100 MHz f_T and 30 ns switching ensure accurate pulse fidelity and minimal gate charge delay in 100 kHz–1 MHz PWM systems.

DC-DC Converter

Automotive Power Distribution

Use Scenario: Synchronous rectifier or primary-side switch in non-isolated buck converters for infotainment or ADAS subsystems.

IC Role / Device Role / Timing Role: High-current, low-loss switching element operating in hard-switched or quasi-resonant topologies.

Use Value: 160 V V_CEO and 175 °C T_J support operation across wide input ranges (e.g., 9–36 V automotive) and high ambient temperatures.

Use Scenario: Smart fuse replacement in centralized power distribution units (PDUs) for vehicle electrification.

IC Role / Device Role / Timing Role: Protected high-side or low-side switch with overcurrent detection interface.

Use Value: AEC-Q101 qualification and 2.2 W thermal rating allow integration into sealed, convection-cooled PDUs without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSVT1602CLTWG	Same die, identical electrical specs; differs only in traceability marking (NSVT prefix denotes PPAP-capable variant).	Identical functional use; required where full PPAP documentation and automotive traceability are mandated.	Select NSVT1602CLTWG when OEM requires PPAP submission or lot-level process validation.
MBT3904DW1T1G	Lower V_CEO (40 V), lower I_C (200 mA), higher V_CE(sat) (0.2 V typ), SOT-363 package (0.5 W P_C).	Suitable only for low-voltage, low-power signal switching - not interchangeable in 12–24 V automotive loads.	Use MBT3904DW1T1G only in non-automotive, <100 mA logic-level applications where cost and size outweigh performance.

Compared with NSVT1602CLTWG and MBT3904DW1T1G, the NST1602CLTWG delivers optimal balance of 160 V ruggedness, 1.5 A current, and 0.04 V saturation in an AEC-Q101-qualified LFPAK8 package - making it the only viable option for thermally demanding, high-reliability automotive switching above 100 mA.

Availability

NST1602CLTWG is available at Aetrix Electronics and suitable for automotive body control modules, DC-DC converter power stages, and gate driver buffer circuits requiring stable component supply, AEC-Q101 compliance, and long-term production continuity.

Supply support for NST1602CLTWG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient technologies for automotive, industrial, cloud, and IoT applications.

The NST1602CLTWG belongs to onsemi's automotive-qualified bipolar transistor family, designed specifically for high-reliability, high-current switching in under-hood and chassis-mounted electronic control units.

FAQ

What is the maximum continuous collector current rating for NST1602CLTWG?

The NST1602CLTWG has a maximum continuous collector current (I_C) rating of 1.5 A at T_A = 25 °C with appropriate PCB copper area. Derating applies above 25 °C ambient; at 100 °C ambient, the usable I_C drops to approximately 1.0 A per the power derating curve in the datasheet. This rating assumes proper thermal management using the LFPAK8 exposed pad soldered to ≥1 in² of 2 oz copper.

Is NST1602CLTWG suitable for automotive applications?

Yes, the NST1602CLTWG is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications including body electronics, power distribution, and ADAS subsystems. Its 175 °C maximum junction temperature, 160 V V_CEO, and robust SOA support operation in harsh under-hood environments. The "NSVT1602CLTWG" variant is explicitly designated for PPAP-submission-critical programs.

What package type does NST1602CLTWG use, and why is it important?

NST1602CLTWG uses the LFPAK8 (Case 760AD) package - a 3.3 mm × 3.3 mm surface-mount outline with an exposed collector pad. This package delivers 2.2 W power dissipation with standard PCB copper, significantly outperforming legacy SOT-23 or TO-220 packages in thermal resistance. Its thin profile (<1 mm height) also enables integration into space-constrained automotive modules.

How does the V_CE(sat) of NST1602CLTWG compare to standard NPN transistors?

The NST1602CLTWG achieves V_CE(sat) as low as 0.035 V at I_C = 250 mA / I_B = 50 mA - roughly 5× lower than typical general-purpose NPN transistors like the MMBT3904 (V_CE(sat) ≈ 0.2 V). This reduction cuts conduction losses by >75%, directly improving efficiency and thermal margin in high-duty-cycle automotive switches.

Can NST1602CLTWG replace MOSFETs in low-voltage switching applications?

The NST1602CLTWG is not a direct MOSFET replacement due to its current-driven base requirement and lack of inherent gate capacitance benefits. However, it excels where ultra-low V_CE(sat) at moderate currents (≤1.5 A) and high-temperature stability (>150 °C) are prioritized over zero-gate-drive power. In 12–24 V automotive loads with limited gate drive capability, NST1602CLTWG offers simpler biasing and superior thermal ruggedness versus small-signal MOSFETs.

NST1602CLTWG Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SOT-1205, 8-LFPAK56

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 140mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 100mA, 5V

Power - Max:: 800 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-LFPAK

NST1602CLTWG FAQ

1.How can I place an order for NST1602CLTWG through Aetrix?

Please submit a Request for Quotation (RFQ) for NST1602CLTWG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NST1602CLTWG reliable?

The price and inventory of NST1602CLTWG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NST1602CLTWG is usually 5 days.

3.What payment methods are accepted for NST1602CLTWG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NST1602CLTWG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NST1602CLTWG?

NST1602CLTWG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NST1602CLTWG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NST1602CLTWG?

For technical support, including NST1602CLTWG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NST1602CLTWG requirements.

6.How does Aetrix verify that NST1602CLTWG is sourced from the original manufacturer or authorized distributors?

All NST1602CLTWG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NST1602CLTWG meets industry standards.

7.What is the process for return or replacement of NST1602CLTWG?

All NST1602CLTWG units undergo pre-shipment inspection (PSI). If there is an issue with NST1602CLTWG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NST1602CLTWG part is unused and in its original packaging.

Return procedure for NST1602CLTWG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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