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onsemi NST846BF3T5G
- Part No.:
- NST846BF3T5G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SOT-1123
- Datasheet:
-
NST846BF3T5G.pdf
- Description:
- TRANS NPN 65V 0.1A SOT-1123
- Quantity:
- Payment:
- Shipping:
Inventory:4,396
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Product details
Overview
NST846BF3T5G from onsemi is an NPN general-purpose bipolar junction transistor in SOT-1123 package, rated for 65 VCEO, 100 mA continuous collector current, and DC current gain (hFE) of 200–450 at IC = 10 mA. It delivers low saturation voltage (VCE(sat) ≤ 0.25 V at IC = 10 mA/IB = 0.5 mA) and supports compact low-power amplifier and switching applications in space-constrained PCB layouts.
For engineers reviewing the NST846BF3T5G datasheet, pinout, applications, or equivalent options, key selection criteria include its SOT-1123 footprint, guaranteed hFE range, thermal resistance (RJA = 360 °C/W on 500 mm² copper), Pb-free/Halide-free compliance, and suitability for low-voltage biasing circuits requiring stable gain and low saturation loss.
Technical Context
The NST846BF3T5G operates as a discrete NPN BJT optimized for linear amplification and low-current switching. Its design targets board-space-sensitive applications where thermal performance under 100 mA load and predictable hFE behavior across −55°C to +150°C are critical. The device uses standard base-emitter forward biasing and exhibits fT = 100 MHz, supporting audio-frequency and low-speed digital signal conditioning.
It features two distinct thermal dissipation ratings: 290 mW (100 mm² copper) and 347 mW (500 mm² copper), with corresponding RJA values of 432 °C/W and 360 °C/W. Junction-to-lead thermal resistance (RJL = 143 °C/W) confirms efficient heat transfer to the PCB via the lead frame-critical for reliability in thermally isolated SMT placements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 65 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in amplifier stages. |
| IC (continuous) | 100 mA - Continuous collector current rating; sets maximum load drive capability without derating. |
| hFE | 200–450 - Guaranteed DC current gain range at IC = 10 mA/VCE = 5 V; enables predictable bias network design. |
| VCE(sat) | ≤ 0.25 V at IC = 10 mA/IB = 0.5 mA - Low saturation voltage minimizes power loss in switching mode. |
| fT | 100 MHz - Current-gain bandwidth product; supports small-signal amplification up to ~10 MHz with usable gain. |
| RJA (500 mm²) | 360 °C/W - Thermal resistance with 500 mm² copper; determines temperature rise per watt dissipated in typical layout. |
| Cobo | 4.5 pF - Output capacitance at VCB = 10 V; impacts high-frequency roll-off and stability in RF-adjacent circuits. |
Pinout & Package
SOT-1123 (Case 524AA) is a 3-pin ultra-miniature surface-mount package measuring 0.80 × 0.60 × 0.37 mm with 0.35 mm pitch. Its low profile and minimal footprint reduce PCB area by >50% versus SOT-23 while maintaining robust solder joint reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biasing the BE junction; requires current-limited drive to set operating point. |
| 2 | Emitter | Common reference node in common-emitter configuration; connects to ground or low-impedance return path. |
| 3 | Collector | Output current sink terminal; carries amplified IC and interfaces with load or next-stage input. |
Key Features
| Feature | Design Value |
|---|---|
| Guaranteed hFE range | 200–450 ensures consistent bias stability across production lots and temperature extremes (−55°C to +150°C). |
| Low VCE(sat) | ≤ 0.25 V at IC = 10 mA reduces conduction loss and self-heating in battery-powered switch-mode circuits. |
| Pb-free & Halide-free | Complies with RoHS and JESD201A Class 2A standards; eliminates corrosion risk in humid environments. |
| High fT | 100 MHz enables use in audio preamps, sensor signal conditioning, and clock buffer stages up to 10 MHz. |
| Optimized thermal path | RJL = 143 °C/W allows effective heat conduction from die to PCB pad, improving long-term reliability in sealed enclosures. |
Applications
| Audio Signal Amplification | Low-Power Switching Load Control |
|---|---|
|
Use Scenario: Amplifying microphone or sensor output signals in portable audio devices with limited supply headroom. IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter topology to provide voltage gain with minimal quiescent current. Use Value: hFE ≥ 200 ensures stable gain over temperature; low VCE(sat) preserves dynamic range near 3.3 V rails. |
Use Scenario: Driving LED indicators, relays, or small solenoids from microcontroller GPIO pins. IC Role / Device Role / Timing Role: Discrete switch controlling load current with base-driven saturation. Use Value: VCE(sat) ≤ 0.25 V limits power loss to <1 mW at 10 mA, enabling direct MCU interface without external driver. |
| Thermal Sensor Biasing | Current Mirror Reference |
|
Use Scenario: Providing precise, temperature-stable bias current to silicon diode or RTD temperature sensors. IC Role / Device Role / Timing Role: Active current source in emitter-follower or constant-current sink configuration. Use Value: Tight hFE tolerance and low VBE(on) drift (580–770 mV) ensure repeatable current setting across −40°C to +85°C. |
Use Scenario: Building matched current sources in analog front-ends for ADC drivers or precision references. IC Role / Device Role / Timing Role: One leg of a discrete current mirror pair sharing identical process and thermal environment. Use Value: SOT-1123 package symmetry and identical die construction enable <5% current ratio mismatch at matched VCE. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT4401LT1G | Higher VCEO (40 V vs. 65 V), lower hFE min (100), same SOT-23 package (larger than SOT-1123). | Better suited for 5 V logic-level switching; less ideal for 12–24 V amplifier stages due to lower breakdown margin. | Select when board space permits SOT-23 and higher fT (250 MHz) is needed for faster edge rates. |
| DXTN07100BIL | Same SOT-1123 package, higher IC (200 mA), but wider hFE spread (100–600) and no guaranteed low-VCE(sat). | Preferred for higher-current loads (>100 mA); less predictable gain in precision bias networks. | Choose for cost-sensitive high-volume switching where absolute hFE consistency is secondary to current capacity. |
Compared with MMBT4401LT1G and DXTN07100BIL, the NST846BF3T5G uniquely balances high VCEO, tight hFE control, ultra-small footprint, and documented low saturation-making it optimal for miniaturized, thermally constrained amplifier and biasing designs where parameter predictability is non-negotiable.
Availability
NST846BF3T5G is available at Aetrix Electronics and suitable for audio signal amplification, low-power switching load control, thermal sensor biasing, and current mirror reference applications requiring stable component supply and full RoHS compliance.
Supply support for NST846BF3T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NST846BF3T5G belongs to onsemi's general-purpose bipolar transistor family, engineered specifically for space-constrained, low-power linear and switching applications where consistent gain, low saturation, and thermal reliability are essential.
FAQ
What is the maximum operating temperature for the NST846BF3T5G?
The NST846BF3T5G has a specified junction and storage temperature range of −55°C to +150°C. Its thermal resistance (RJA = 360 °C/W on 500 mm² copper) means that at 347 mW dissipation, junction temperature rises 125°C above ambient-so operation at full power is safe only if ambient stays below +25°C. Derating is required above 25°C per the datasheet's 2.8 mW/°C slope.
Is the NST846BF3T5G pin-compatible with other SOT-1123 transistors?
Yes-the NST846BF3T5G follows the standard SOT-1123 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches industry-standard orientation for SOT-1123 NPN devices including DXTN07100BIL and MMBT2222AL. Layout reuse is possible provided hFE, VCE(sat), and thermal requirements align.
Does the NST846BF3T5G meet RoHS and halogen-free requirements?
Yes-the "G" suffix in NST846BF3T5G explicitly denotes Pb-free packaging, and the datasheet confirms it is both halide-free and RoHS-compliant. No brominated flame retardants or chlorine-based compounds are used in the mold compound or lead finish, satisfying IPC-4101D and JEDEC J-STD-020 requirements.
What is the typical noise figure of the NST846BF3T5G in amplifier configurations?
The NST846BF3T5G has a maximum noise figure of 10 dB at IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, and BW = 200 Hz. This makes it suitable for low-noise preamplifier stages in sensor interfaces and audio inputs where sub-10 dB NF is not mandatory but moderate signal integrity is required.
Can the NST846BF3T5G be used in common-base amplifier configurations?
Yes-the NST846BF3T5G supports common-base operation with its 80 V VCBO rating and low Cibo (10 pF). In this configuration, it provides high-frequency voltage gain and wide bandwidth, leveraging its fT = 100 MHz and low output capacitance (Cobo = 4.5 pF), though input impedance is reduced compared to common-emitter use.
NST846BF3T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SOT-1123
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 65 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 290 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-1123
NST846BF3T5G FAQ
1.How can I place an order for NST846BF3T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for NST846BF3T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NST846BF3T5G reliable?
The price and inventory of NST846BF3T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NST846BF3T5G is usually 5 days.
3.What payment methods are accepted for NST846BF3T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NST846BF3T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NST846BF3T5G?
NST846BF3T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NST846BF3T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NST846BF3T5G?
For technical support, including NST846BF3T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NST846BF3T5G requirements.
6.How does Aetrix verify that NST846BF3T5G is sourced from the original manufacturer or authorized distributors?
All NST846BF3T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NST846BF3T5G meets industry standards.
7.What is the process for return or replacement of NST846BF3T5G?
All NST846BF3T5G units undergo pre-shipment inspection (PSI). If there is an issue with NST846BF3T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NST846BF3T5G part is unused and in its original packaging.
Return procedure for NST846BF3T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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