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onsemi NST846BMX2T5G
- Part No.:
- NST846BMX2T5G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 0402 (1006 Metric)
- Datasheet:
-
NST846BMX2T5G.pdf
- Description:
- TRANS NPN 65V 0.1A 3X2DFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,656
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Product details
Overview
NST846BMX2T5G from onsemi is an NPN silicon general-purpose transistor in a 1.0 mm × 0.6 mm X2DFN3 package, rated for VCEO = 65 V, IC = 100 mA continuous, and VCE(sat) ≤ 0.25 V at IC = 10 mA / IB = 0.5 mA. It delivers hFE = 200–270 at IC = 2.0 mA / VCE = 5.0 V and supports high-speed switching in low-power signal amplification and load switching applications.
For engineers reviewing the NST846BMX2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include its 65 V VCEO, 100 mA IC, 200–270 DC current gain range, 100 MHz fT, and ultra-compact X2DFN3 footprint-critical for space-constrained consumer, industrial, and portable electronics designs.
Technical Context
The NST846BMX2T5G operates as a discrete NPN bipolar junction transistor optimized for general-purpose amplification and switching. Its electrical behavior is defined by VCEO = 65 V, VCBO = 80 V, and VEBO = 6.0 V, with guaranteed hFE ≥ 200 at IC = 2.0 mA / VCE = 5.0 V and VCE(sat) ≤ 0.25 V under forced β = 20 conditions.
Thermal performance depends on PCB copper area: RJA = 720 °C/W (0.6 mm² pad) or 203 °C/W (100 mm² pad), enabling operation across −55 °C to +150 °C. Its 4.5 pF Cobo and 100 MHz fT support stable small-signal gain up to mid-VHF frequencies in biasing and driver stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 65 V - Maximum collector-emitter voltage before breakdown; enables use in 48 V rail and higher-voltage logic interface circuits. |
| IC (continuous) | 100 mA - Continuous collector current rating; suitable for driving LEDs, relays, and small solenoids without external heat sinking. |
| hFE | 200–270 at IC = 2.0 mA / VCE = 5.0 V - High DC current gain ensures low base drive requirements in amplifier and switch configurations. |
| VCE(sat) | ≤ 0.25 V at IC = 10 mA / IB = 0.5 mA - Low saturation voltage minimizes power loss and self-heating in switching applications. |
| fT | 100 MHz - Current-gain bandwidth product; supports stable amplification and fast edge response in signal conditioning paths. |
| Cobo | 4.5 pF at VCB = 10 V - Low output capacitance reduces Miller effect and improves high-frequency stability in common-emitter stages. |
| ESD Rating (HBM) | > 4000 V - Robust electrostatic discharge immunity simplifies handling and board-level ESD protection design. |
Pinout & Package
Package: X2DFN3 (1.0 mm × 0.6 mm, 0.35 mm pitch), surface-mount, leadless, moisture sensitivity level 1. Thermal performance is highly dependent on PCB copper pad area per datasheet Note 1 (0.6 mm²) and Note 2 (100 mm²).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Collector | Main current sink terminal | Connected to load or higher-potential node; must be routed with adequate copper for thermal dissipation. |
| 2 - Base | Control input terminal | Receives bias current to modulate collector current; requires series resistor to limit drive and prevent overdrive. |
| 3 - Emitter | Current source reference terminal | Typically tied to ground or low-side return path; forms the reference for VBE and VCE measurements. |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free, Halogen-free/BFR-free, RoHS compliant | Meets global environmental compliance mandates without requiring process requalification or material change notifications. |
| Moisture Sensitivity Level 1 | Zero bake requirement prior to reflow; compatible with standard SMT assembly lines without dry-pack or floor-life constraints. |
| High ESD robustness (HBM > 4000 V) | Reduces risk of field failure during handling, testing, and end-user operation in unshielded environments. |
| Low VCE(sat) and high hFE | Enables efficient low-power switching with minimal base drive and reduced conduction losses in battery-powered systems. |
| 100 MHz fT and 4.5 pF Cobo | Supports clean signal amplification and fast digital switching up to ~10–20 MHz with predictable rise/fall times. |
Applications
| LED Driver Circuits | Microcontroller GPIO Expanders |
|---|---|
|
Use Scenario: Driving single-color or RGB indicator LEDs from 3.3 V or 5 V microcontroller outputs. IC Role / Device Role / Timing Role: NPN switch controlling LED anode/cathode current path with precise on/off timing. Use Value: VCE(sat) ≤ 0.25 V ensures minimal voltage drop and consistent brightness; hFE ≥ 200 allows direct GPIO drive without additional buffer stages. |
Use Scenario: Extending limited GPIO count of MCU-based sensor nodes or industrial controllers via discrete transistor arrays. IC Role / Device Role / Timing Role: General-purpose level-shifting and current-boosting switch for interfacing peripherals. Use Value: 65 V VCEO and 100 mA IC support diverse peripheral voltages and loads; compact X2DFN3 saves board space in dense layouts. |
| Low-Power Signal Amplifiers | Power Supply Enable Switches |
|
Use Scenario: Small-signal preamplification in audio front-ends, sensor signal conditioning, or analog monitoring circuits. IC Role / Device Role / Timing Role: Common-emitter amplifier stage providing voltage gain with stable DC bias point. Use Value: 100 MHz fT and low noise figure (4.0 dB at 1 kHz) ensure fidelity in sub-MHz analog signal paths. |
Use Scenario: Enabling/disabling auxiliary rails (e.g., 3.3 V, 5 V, 12 V) in multi-rail embedded systems using MCU-controlled enable signals. IC Role / Device Role / Timing Role: Low-side or high-side switch controlling power domain activation with fast turn-on/turn-off. Use Value: Fast switching characteristics (typical ton < 20 ns, toff < 100 ns) minimize enable delay and reduce inrush transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3904LT1G | VCEO = 40 V (lower), hFE = 100–300 (wider spread), same X1DFN package (1.0 × 0.6 mm but 0.3 mm pitch) | Not suitable for 48 V systems; acceptable where lower voltage margin and tighter layout tolerance exist. | Select when cost sensitivity outweighs 65 V headroom need and board layout accommodates finer pitch. |
| BC846B,215 | VCEO = 65 V (same), but SOT-23 package (2.9 × 1.3 mm); hFE = 200–450 at IC = 10 mA | Larger footprint limits density; higher hFE range may require recalibration of base resistors. | Choose when legacy SOT-23 compatibility or higher hFE at higher IC is prioritized over miniaturization. |
Compared with MMBT3904LT1G, NST846BMX2T5G provides 25 V higher VCEO headroom critical for industrial 48 V bus interfaces; versus BC846B,215, it offers 60% smaller footprint and identical VCEO, enabling denser routing in portable and wearable designs.
Availability
NST846BMX2T5G is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, low-power signal amplifiers, and power supply enable switches requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.
Supply support for NST846BMX2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NST846BMX2T5G belongs to onsemi's general-purpose bipolar transistor family, designed specifically for space-constrained, low-power switching and amplification in consumer, computing, and industrial control systems.
FAQ
What is the maximum operating temperature for the NST846BMX2T5G?
The NST846BMX2T5G has a specified junction and storage temperature range of −55 °C to +150 °C. Its actual maximum operating temperature depends on power dissipation and PCB thermal design: with a 100 mm² copper pad, it achieves RJA = 203 °C/W, allowing sustained operation near 125 °C ambient at full 100 mA load. Derating is required above 25 °C per the 4.93 mW/°C specification.
Does the NST846BMX2T5G support high-speed switching applications?
Yes, the NST846BMX2T5G supports high-speed switching with a current-gain bandwidth product (fT) of 100 MHz and typical turn-on time < 20 ns. Its 4.5 pF Cobo and low VCE(sat) ensure fast edge response and minimal switching loss, making it suitable for PWM dimming, digital signal buffering, and clock distribution up to ~20 MHz.
What is the pin configuration and marking code for NST846BMX2T5G?
The NST846BMX2T5G uses a 3-pin X2DFN3 package with pin 1 = Collector, pin 2 = Base, pin 3 = Emitter. The top-side marking is "AD", as confirmed in the onsemi ordering information table. Orientation follows standard DFN polarity: collector is the leftmost pad when the marking is read upright.
How does the thermal performance of NST846BMX2T5G vary with PCB layout?
Thermal resistance of NST846BMX2T5G varies significantly with PCB copper area: RJA = 720 °C/W with a minimal 0.6 mm² pad (Note 1), but improves to 203 °C/W with a 100 mm² 2 oz. Cu pad (Note 2). This 3.5× improvement directly impacts allowable power dissipation-PD rises from 165 mW to 590 mW at 25 °C ambient-making pad design critical for reliability.
Is NST846BMX2T5G pin-compatible with other transistors in the NST846/NST847 family?
Yes, all variants-NST846BMX2T5G, NST847AMX2T5G, and NST847BMX2T5G-share identical X2DFN3 package dimensions, pinout (Collector/Base/Emitter), and mechanical footprint. However, electrical parameters differ: NST846B has VCEO = 65 V, while NST847A/B are rated at 45 V; hFE bins also vary, so electrical substitution requires validation against circuit voltage and gain requirements.
NST846BMX2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 0402 (1006 Metric)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 65 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-X2DFN (1x0.6)
NST846BMX2T5G FAQ
1.How can I place an order for NST846BMX2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for NST846BMX2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NST846BMX2T5G reliable?
The price and inventory of NST846BMX2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NST846BMX2T5G is usually 5 days.
3.What payment methods are accepted for NST846BMX2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NST846BMX2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NST846BMX2T5G?
NST846BMX2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NST846BMX2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NST846BMX2T5G?
For technical support, including NST846BMX2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NST846BMX2T5G requirements.
6.How does Aetrix verify that NST846BMX2T5G is sourced from the original manufacturer or authorized distributors?
All NST846BMX2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NST846BMX2T5G meets industry standards.
7.What is the process for return or replacement of NST846BMX2T5G?
All NST846BMX2T5G units undergo pre-shipment inspection (PSI). If there is an issue with NST846BMX2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NST846BMX2T5G part is unused and in its original packaging.
Return procedure for NST846BMX2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NST846BMX2T5G Tags
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MMBT3906-7-F
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