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onsemi NST847AMX2T5G
- Part No.:
- NST847AMX2T5G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 0402 (1006 Metric)
- Datasheet:
-
NST847AMX2T5G.pdf
- Description:
- TRANS NPN 45V 0.1A 3X2DFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,968
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Product details
Overview
NST847AMX2T5G from onsemi is an NPN silicon general-purpose transistor in a 3-pin X2DFN3 (1.0 × 0.6 mm) surface-mount package, rated for VCEO = 45 V, IC = 100 mA continuous, and hFE = 110–220 at IC = 100 mA/VCE = 1.0 V, used in low-power switching and amplification circuits in consumer and industrial signal conditioning modules.
For engineers reviewing the NST847AMX2T5G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal derating behavior, saturation voltage performance under defined drive conditions, and real-world substitution guidance aligned with onsemi's official specifications.
Technical Context
This device operates as a single NPN bipolar junction transistor optimized for low-voltage, medium-speed switching and small-signal amplification. Its DC current gain (hFE) is specified across two test conditions: 110–220 at IC = 100 mA/VCE = 1.0 V and 180–290 at IC = 2.0 mA/VCE = 5.0 V, supporting both saturated-switching and linear-region use cases.
Thermal performance depends critically on PCB copper area: RJA is 720 °C/W with a minimal 0.6 mm² pad and improves to 203 °C/W with a 100 mm² pad. The fT of 100 MHz enables operation up to mid-frequency analog and digital signal paths without significant gain roll-off.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage headroom in low-side switch designs. |
| IC (continuous) | 100 mA - Absolute maximum DC collector current; sets upper limit for steady-state load driving capability in discrete logic interface or LED driver stages. |
| hFE (min–max) | 110–220 - DC current gain range at IC = 100 mA/VCE = 1.0 V; determines required base drive current for reliable saturation in switching applications. |
| VCE(sat) | 0.25–0.6 V - Collector-emitter saturation voltage at IC = 10–100 mA/IB = 0.5–5.0 mA; directly impacts power loss and temperature rise in on-state operation. |
| fT | 100 MHz - Current-gain bandwidth product at IC = 10 mA/VCE = 5.0 V; supports stable amplification or switching up to ~10–20 MHz with usable gain margin. |
| RJA (with 100 mm² Cu) | 203 °C/W - Junction-to-ambient thermal resistance using large PCB copper pour; enables 590 mW total dissipation at TA = 25°C before thermal limiting. |
Pinout & Package
X2DFN3 (1.0 × 0.6 mm, 0.35 mm pitch) ultra-small outline package with exposed drain pad (collector-connected), designed for high-density PCB layouts and automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Collector | Primary current output terminal; electrically connected to the exposed thermal pad for enhanced heat transfer and low-inductance routing. |
| 2 | Base | Control input node; requires current-limited drive (e.g., via series resistor) to achieve target hFE-based saturation with minimal overshoot. |
| 3 | Emiter | Reference terminal for bias and signal return; must be tied to system ground or common emitter node to establish proper BJT operating point. |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free, RoHS-compliant construction | Meets global environmental compliance requirements without lead-based solder compatibility compromises. |
| ESD robustness (HBM > 4000 V) | Withstands electrostatic discharge events during handling and board-level integration without parameter shift or failure. |
| Moisture Sensitivity Level 1 | Zero floor-life restriction; can be stored indefinitely at ≤30°C/60% RH and assembled without baking prior to reflow. |
| Low VBE(sat) (0.7–0.9 V) | Reduces base drive power and improves efficiency in battery-powered or low-voltage control circuits. |
Applications
| LED Driver Stage | Logic-Level Signal Switch |
|---|---|
Use Scenario: Driving indicator LEDs in portable instrumentation with 3.3 V microcontroller GPIO outputs. IC Role / Device Role / Timing Role: NPN switch enabling current sink configuration with fast turn-on/turn-off (<100 ns typical). Use Value: Low VCE(sat) minimizes voltage drop across the transistor, preserving LED forward voltage margin and brightness consistency. |
Use Scenario: Translating 1.8 V/3.3 V logic signals to 5 V rail-synchronized loads in mixed-voltage sensor interfaces. IC Role / Device Role / Timing Role: Discrete level-shifting switch with predictable hFE and sub-200 ns propagation delay. Use Value: Verified fT = 100 MHz ensures clean edge integrity and minimal distortion in 1–5 MHz digital control lines. |
| Small-Signal Amplifier | Load Protection Switch |
Use Scenario: Pre-amplifying weak analog sensor outputs (e.g., thermistor bridges) before ADC sampling in industrial controllers. IC Role / Device Role / Timing Role: Common-emitter amplifier biased in linear region with stable hFE across −55°C to +150°C. Use Value: Specified hFE variation over temperature enables accurate gain calibration without active compensation. |
Use Scenario: Isolating downstream circuitry from inrush or fault currents in USB-powered peripheral modules. IC Role / Device Role / Timing Role: Fast-acting current-limiting switch activated by microcontroller fault detection logic. Use Value: Short storage time (t′s < 100 ns) and low Cobo = 4.5 pF enable rapid shutdown response to overcurrent events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3904LT1G | Higher VCEO = 40 V (vs. 45 V), lower hFE min = 100 at IC = 10 mA, same X2DFN3 package. | Suitable for lower-voltage logic buffering but less margin in 45 V supply rails; slightly higher VCE(sat) at high IC. | Select when cost sensitivity outweighs need for 45 V rating or tighter hFE consistency at 100 mA. |
| BC847BW | Same VCEO = 45 V, hFE = 110–220 at IC = 10 mA (not 100 mA), SOT-323 package (larger footprint). | Compatible gain range but lower current-handling confidence above 50 mA; requires more PCB area and has higher RJA. | Choose only if legacy SOT-323 layout reuse is mandatory and thermal derating is acceptable. |
Compared with MMBT3904LT1G and BC847BW, the NST847AMX2T5G provides superior current-handling headroom at full 100 mA with verified hFE and VCE(sat) specs, tighter thermal resistance in compact layout, and guaranteed 45 V VCEO - making it optimal for space-constrained, thermally demanding, or higher-voltage switching nodes.
Availability
NST847AMX2T5G is available at Aetrix Electronics and suitable for LED driver stages, logic-level signal switches, small-signal amplifiers, load protection switches, and sensor interface circuits requiring stable component supply across automotive infotainment, industrial HMI, and IoT endpoint designs.
Supply support for NST847AMX2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NST847AMX2T5G belongs to onsemi's general-purpose NPN transistor family engineered for high-reliability, low-cost discrete signal switching and amplification in space-constrained, thermally sensitive applications.
FAQ
What is the maximum continuous collector current rating for NST847AMX2T5G?
The NST847AMX2T5G is rated for a maximum continuous collector current (IC) of 100 mA at TA = 25°C. This rating assumes adequate PCB copper area (e.g., 100 mm²) for thermal management; derating applies above 25°C per the 4.93 mW/°C slope specified in the datasheet. Exceeding this current risks thermal runaway or parametric shift.
Does NST847AMX2T5G support operation at elevated temperatures?
Yes, the NST847AMX2T5G is qualified for junction temperatures from −55°C to +150°C. Its hFE, VCE(sat), and leakage parameters are characterized across this full range, and Figure 21 in the datasheet confirms stable DC current gain down to −55°C and up to 150°C - making NST847AMX2T5G suitable for under-hood automotive or industrial ambient environments.
What is the typical current-gain bandwidth product (fT) of NST847AMX2T5G?
The NST847AMX2T5G has a minimum fT of 100 MHz, measured at IC = 10 mA, VCE = 5.0 V, and f = 100 MHz. This value is confirmed in the Electrical Characteristics table and supported by Figure 27, which shows fT remains ≥100 MHz across IC = 1–100 mA - enabling reliable small-signal amplification or high-speed switching up to ~20 MHz with usable gain.
How does the thermal resistance of NST847AMX2T5G vary with PCB layout?
NST847AMX2T5G exhibits two distinct thermal resistance values depending on PCB copper area: RJA = 720 °C/W with a minimal 0.6 mm² pad (Note 1), and RJA = 203 °C/W with a 100 mm² pad (Note 2). This 3.5× improvement directly increases allowable power dissipation from 165 mW to 590 mW at 25°C ambient - underscoring the critical impact of layout on thermal performance.
Is NST847AMX2T5G pin-compatible with other transistors in the NST846/NST847 series?
Yes, all devices in the NST846BMX2/NST847AMX2/NST847BMX2 family share identical X2DFN3 package dimensions, pinout (Collector–Base–Emitter on pins 1–2–3), and mechanical footprint. However, electrical ratings differ: NST847AMX2T5G offers VCEO = 45 V and hFE = 110–220 at 100 mA, while NST846BMX2T5G provides VCEO = 65 V and lower hFE - so electrical substitution requires validation against circuit voltage and gain requirements.
NST847AMX2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 0402 (1006 Metric)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 110 @ 2mA, 5V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-X2DFN (1x0.6)
NST847AMX2T5G FAQ
1.How can I place an order for NST847AMX2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for NST847AMX2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NST847AMX2T5G reliable?
The price and inventory of NST847AMX2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NST847AMX2T5G is usually 5 days.
3.What payment methods are accepted for NST847AMX2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NST847AMX2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NST847AMX2T5G?
NST847AMX2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NST847AMX2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NST847AMX2T5G?
For technical support, including NST847AMX2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NST847AMX2T5G requirements.
6.How does Aetrix verify that NST847AMX2T5G is sourced from the original manufacturer or authorized distributors?
All NST847AMX2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NST847AMX2T5G meets industry standards.
7.What is the process for return or replacement of NST847AMX2T5G?
All NST847AMX2T5G units undergo pre-shipment inspection (PSI). If there is an issue with NST847AMX2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NST847AMX2T5G part is unused and in its original packaging.
Return procedure for NST847AMX2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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