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onsemi NST847BMX2T5G
- Part No.:
- NST847BMX2T5G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 0402 (1006 Metric)
- Datasheet:
-
NST847BMX2T5G.pdf
- Description:
- TRANS NPN 45V 0.1A 3X2DFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,735
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Product details
Overview
NST847BMX2T5G from onsemi is an NPN silicon general-purpose transistor in a 3-pin X2DFN3 (1.0×0.6 mm) surface-mount package, rated for VCEO = 45 V, IC = 100 mA continuous, and VCE(sat) ≤ 0.6 V at IC = 100 mA / IB = 5 mA. It delivers hFE = 220–450 at IC = 2 mA / VCE = 5 V and fT = 100 MHz, supporting low-power switching and amplification in space-constrained consumer and industrial control circuits.
For engineers reviewing the NST847BMX2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include its 45 V VCEO, 100 mA IC rating, 220–450 DC current gain range, 100 MHz fT, and thermal resistance of 203 °C/W on 100 mm² copper pad - all critical for reliable low-voltage signal switching and biasing in compact PCB layouts.
Technical Context
This NPN transistor operates in active and saturation regions with defined breakdown limits: V(BR)CEO = 45 V (IC = 10 mA), V(BR)CBO = 50 V (IC = 10 mA), and V(BR)EBO = 6.0 V (IE = 1.0 A). Its small-signal performance includes fT = 100 MHz at IC = 10 mA / VCE = 5 V and Cobo = 4.5 pF at VCB = 10 V / f = 1 MHz.
Thermal design is supported by two power dissipation modes: 165 mW (0.6 mm² Cu pad, RJA = 720 °C/W) and 590 mW (100 mm² Cu pad, RJA = 203 °C/W). Junction temperature range spans −55 °C to +150 °C, and ESD ratings exceed 4000 V HBM and 350 V MM - confirming suitability for automated assembly and robust operation in ambient-temperature-variable environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines safe operating voltage headroom in low-side switch applications. |
| IC (continuous) | 100 mA - Continuous collector current limit; sets maximum load drive capability without derating in ambient ≤25°C with adequate copper area. |
| hFE | 220–450 - DC current gain at IC = 2 mA / VCE = 5 V; enables predictable base drive sizing for saturation in digital logic interface circuits. |
| VCE(sat) | ≤0.6 V at IC = 100 mA / IB = 5 mA - Low saturation voltage minimizes conduction loss and self-heating in high-duty-cycle switching. |
| fT | 100 MHz - Current-gain bandwidth product at IC = 10 mA / VCE = 5 V; supports stable amplification up to mid-VHF frequencies in RF front-end or oscillator bias stages. |
| RJA | 203 °C/W - Junction-to-ambient thermal resistance with 100 mm² 2 oz. Cu pad; determines required board layout copper area for thermal management at full IC. |
Pinout & Package
Package: X2DFN3 (1.0 × 0.6 mm, 0.35 mm pitch, 3-terminal surface-mount package per Case 714AC).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Collector) | Main current output terminal | Connected to load return path; must be routed with sufficient copper area to handle 100 mA and dissipate heat via thermal pad. |
| 2 (Base) | Control input terminal | Receives forward-biased current to drive transistor into saturation; requires series resistor to limit IB based on hFE and load requirements. |
| 3 (Emitter) | Main current return terminal | Typically tied to ground or low-side reference; forms common node for base-emitter bias network and current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free, Halogen-free/BFR-free, RoHS-compliant | Meets global environmental compliance mandates without requiring special handling or exemptions in final product certification. |
| Moisture Sensitivity Level 1 | Unlimited floor life at ≤30°C/85% RH; eliminates bake requirement prior to reflow, reducing manufacturing cost and process complexity. |
| ESD robustness | >4000 V HBM and >350 V MM - withstands electrostatic discharge during handling and board assembly without parameter shift or failure. |
| High fT / low Cobo | 100 MHz fT with only 4.5 pF output capacitance - enables clean switching edges and minimal signal distortion in pulse amplification. |
Applications
| LED Driver Circuit | Microcontroller GPIO Interface |
|---|---|
|
Use Scenario: Driving discrete indicator LEDs or low-current LED strings from 3.3 V or 5 V microcontroller outputs. IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology, sinking current from LED anode to ground. Use Value: VCE(sat) ≤ 0.6 V ensures >90% LED forward voltage utilization; hFE ≥ 220 allows <5 mA base drive for 100 mA LED loads. |
Use Scenario: Level-shifting or current boosting between low-drive-strength MCU pins and higher-current peripherals (e.g., relays, sensors). IC Role / Device Role / Timing Role: Digital switch translating logic-high signals into controlled current sources/sinks for external circuit activation. Use Value: Fast turn-on/off times (<10 ns typical) and 100 MHz fT support clean edge integrity at 1–10 MHz toggle rates without ringing. |
| Low-Power Sensor Biasing | Audio Signal Amplifier Stage |
|
Use Scenario: Providing stable DC bias current to analog sensor elements (e.g., thermistors, photodiodes) in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Active current source in emitter-follower or constant-current sink configuration. Use Value: Tight hFE spread (220–450) and low VBE(on) (580–770 mV) enable accurate, temperature-stable bias current generation with minimal supply overhead. |
Use Scenario: Low-noise preamplification of microphone or piezo sensor signals in portable audio devices. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier stage with resistive collector load. Use Value: NF = 4.0 dB at IC = 0.2 mA / f = 1 kHz ensures minimal added noise in sub-100 μV signal paths; fT supports wideband response up to 100 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3904LT1G | VCEO = 40 V (5 V lower); hFE = 100–300 (lower max gain); same X2DFN3 package and pinout. | Suitable for ≤40 V systems; may require higher base drive for same IC due to lower hFE ceiling. | Select when cost sensitivity outweighs need for 45 V margin or higher gain linearity. |
| DXT7000LPSQ-13 | VCEO = 50 V (5 V higher); hFE = 250–500; SOT-723 package (smaller footprint, different pinout). | Enables higher-voltage operation but requires PCB redesign due to non-pin-compatible 3-pin SOT-723 layout. | Choose for enhanced voltage headroom where board space permits new layout and thermal validation. |
Compared with NST847BMX2T5G, MMBT3904LT1G offers lower cost and identical mounting but reduced voltage and gain margins, while DXT7000LPSQ-13 provides higher VCEO and hFE at the expense of layout compatibility - making NST847BMX2T5G optimal for designs needing 45 V tolerance, 220+ hFE, and drop-in replacement capability in existing X2DFN3 footprints.
Availability
NST847BMX2T5G is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO interfacing, and low-power sensor biasing requiring stable component supply, consistent parametric performance across production lots, and long-term manufacturability assurance.
Supply support for NST847BMX2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.
The NST847BMX2T5G belongs to onsemi's general-purpose bipolar transistor family, designed specifically for space-constrained, low-power linear and switching applications demanding high reliability, robust ESD immunity, and simplified thermal design in consumer and industrial electronics.
FAQ
What is the maximum collector-emitter voltage rating for NST847BMX2T5G?
The NST847BMX2T5G has a maximum collector-emitter voltage (VCEO) rating of 45 Vdc, specified at IC = 10 mA with the base open. This value defines the absolute upper limit for voltage applied between collector and emitter before risk of avalanche breakdown; operation above this level, even briefly, may cause irreversible damage to the NST847BMX2T5G.
Does NST847BMX2T5G support lead-free reflow soldering?
Yes, the NST847BMX2T5G is Pb-free, halogen-free/BFR-free, and RoHS-compliant, qualified for standard lead-free reflow profiles (JEDEC J-STD-020). Its Moisture Sensitivity Level 1 rating means it can be stored indefinitely at ≤30°C/85% RH without baking - simplifying handling and ensuring reliable solder joint formation during assembly of the NST847BMX2T5G.
What is the typical DC current gain (hFE) range for NST847BMX2T5G?
The NST847BMX2T5G exhibits a DC current gain (hFE) range of 220 to 450 when tested at IC = 2.0 mA and VCE = 5.0 V. This wide but well-characterized spread allows designers to size base resistors conservatively for worst-case gain while maintaining saturation across the full operating temperature range of the NST847BMX2T5G.
How does thermal performance differ between PCB pad configurations for NST847BMX2T5G?
The NST847BMX2T5G's thermal resistance varies significantly with copper area: RJA = 720 °C/W with a 0.6 mm² pad (165 mW max power), versus RJA = 203 °C/W with a 100 mm² pad (590 mW max power). This 3.5× improvement confirms that aggressive copper pour under the thermal pad is essential to sustain full 100 mA current in the NST847BMX2T5G without exceeding TJ = 150°C.
Is NST847BMX2T5G pin-compatible with other transistors in the same package?
Yes, the NST847BMX2T5G uses the standardized X2DFN3 (Case 714AC) 3-pin layout - Collector (Pin 1), Base (Pin 2), Emitter (Pin 3) - matching industry-standard pinout for this footprint. This allows direct physical replacement with other X2DFN3-packaged NPN transistors (e.g., MMBT3904LT1G) when electrical parameters align, though full functional equivalence requires verification of VCEO, hFE, and VCE(sat) for the NST847BMX2T5G use case.
NST847BMX2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 0402 (1006 Metric)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-X2DFN (1x0.6)
NST847BMX2T5G FAQ
1.How can I place an order for NST847BMX2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for NST847BMX2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NST847BMX2T5G reliable?
The price and inventory of NST847BMX2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NST847BMX2T5G is usually 5 days.
3.What payment methods are accepted for NST847BMX2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NST847BMX2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NST847BMX2T5G?
NST847BMX2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NST847BMX2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NST847BMX2T5G?
For technical support, including NST847BMX2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NST847BMX2T5G requirements.
6.How does Aetrix verify that NST847BMX2T5G is sourced from the original manufacturer or authorized distributors?
All NST847BMX2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NST847BMX2T5G meets industry standards.
7.What is the process for return or replacement of NST847BMX2T5G?
All NST847BMX2T5G units undergo pre-shipment inspection (PSI). If there is an issue with NST847BMX2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NST847BMX2T5G part is unused and in its original packaging.
Return procedure for NST847BMX2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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