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onsemi NSV12100XV6T1G
- Part No.:
- NSV12100XV6T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SOT-563, SOT-666
- Datasheet:
-
NSV12100XV6T1G.pdf
- Description:
- TRANS PNP 12V 1A SOT-563
- Quantity:
- Payment:
- Shipping:
Inventory:4,000
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Product details
Overview
NSV12100XV6T1G from onsemi is a PNP low VCE(sat) transistor rated for −12 V VCEO, −1.0 A continuous collector current, and 650 mW power dissipation in SOT-563 package. It delivers 150 mV typical saturation voltage at −500 mA, high DC current gain (hFE = 100 min), and operates across −55 °C to +150 °C. It serves as a compact, efficient switching element in portable DC-DC converters and battery-powered load control circuits.
For engineers reviewing the NSV12100XV6T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 1 A, thermal resistance (RJA = 192 °C/W with 500 mm² copper), Pb-free SOT-563 footprint compatibility, and ESD robustness (HBM Class 3).
Technical Context
This device belongs to onsemi's e2PowerEdge family of low-saturation-voltage transistors optimized for high-efficiency, low-voltage switching. Its PNP topology enables active-low control in high-side configurations, while its linear hFE behavior supports analog amplifier use cases without gain compression.
The SOT-563 package integrates six terminals with dual-collector configuration (pins 1,2,5,6 tied internally), enabling parallel current handling and reduced thermal impedance. Thermal derating is defined at 5.2 mW/°C above 25 °C when mounted on 500 mm² copper, supporting stable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −12 V - Maximum reverse-biased collector-emitter voltage before breakdown; defines safe operating range in 12 V rail applications. |
| IC (continuous) | −1.0 A - Continuous collector current rating; supports sustained 1 A switching loads without thermal runaway under specified PCB layout. |
| VCE(sat) @ −500 mA | 150 mV typical - Ultra-low saturation voltage reduces conduction loss to ≤75 mW at 500 mA, critical for battery runtime extension. |
| hFE @ −500 mA | 100 min - High DC current gain allows direct drive from PMU GPIOs with IB ≤ 5 mA, eliminating need for pre-driver stages. |
| RJA (500 mm²) | 192 °C/W - Junction-to-ambient thermal resistance with large copper area; enables 650 mW power dissipation at TA = 25 °C. |
| ESD Rating | HBM Class 3 - Withstands ≥8 kV human-body-model ESD pulses, suitable for assembly in non-ESD-controlled environments. |
| TJ Range | −55 °C to +150 °C - Extended temperature capability supports automotive instrument cluster and industrial motor control deployments. |
Pinout & Package
SOT-563 (Case 463A) is a 1.60 × 1.20 × 0.55 mm, 6-pin miniature surface-mount package with gull-wing leads and 0.50 mm pitch. Pins 1, 2, 5, and 6 are internally connected to the collector; pin 3 is base; pin 4 is emitter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector | Four parallel collector terminals reduce bond-wire resistance and thermal impedance; enable higher peak current handling and improved heat spreading. |
| 3 | Base | Single-base input terminal; accepts standard TTL/CMOS logic-level drive when used with appropriate series resistor. |
| 4 | Emiter | Emitter output node; referenced to system ground in low-side switch configurations or to positive rail in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 150 mV typical at −500 mA enables <100 mW conduction loss, directly extending battery life in portable devices. |
| Dual-collector architecture | Four collector pins (1,2,5,6) lower effective RDS(on)-equivalent resistance by ~30% versus single-pin SOT-23 equivalents. |
| High hFE linearity | hFE remains ≥90 from −10 mA to −1.0 A, supporting both digital switching and analog amplification without gain collapse. |
| Pb-free & RoHS-compliant | SOT-563 package meets JEDEC J-STD-020 reflow profile and IPC/JEDEC J-STD-033 moisture sensitivity level 1 (MSL1). |
| Wide temperature operation | Guaranteed electrical performance from −55 °C to +150 °C supports deployment in automotive airbag controllers and industrial disc drives. |
Applications
| Portable DC-DC Converters | Battery-Powered Load Switching |
|---|---|
|
Use Scenario: Step-down conversion in smartphone power management ICs supplying core logic rails. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in buck converter output stage. Use Value: 150 mV VCE(sat) cuts conduction loss by >40% vs. standard PNP transistors, improving efficiency at 500 mA–1 A loads. |
Use Scenario: Power gating of camera sensor modules and Bluetooth radios in wearables. IC Role / Device Role / Timing Role: High-current discrete load switch controlled by PMU GPIO. Use Value: 1 A rating and 100 hFE allow direct drive from 3.3 V GPIO with ≤5 mA base current-no external driver needed. |
| Automotive Instrument Clusters | Low-Voltage Motor Control |
|
Use Scenario: Backlight dimming and LED driver enable/disable in digital dashboards. IC Role / Device Role / Timing Role: High-side switch controlling 12 V LED strings via microcontroller I/O. Use Value: −12 V VCEO and 150 °C TJ rating ensure reliable operation in under-hood ambient temperatures up to 105 °C. |
Use Scenario: Directional control and braking in 12 V spindle motors for optical disc drives. IC Role / Device Role / Timing Role: H-bridge half-bridge switch in brushed DC motor driver stage. Use Value: Dual-collector pinout (pins 1,2,5,6) lowers thermal resistance during 1 A stall currents, preventing thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3906LT1G | VCE(sat) = 400 mV @ −50 mA (vs. 150 mV @ −500 mA); hFE = 100 min only at −10 mA; 310 mW max PD. | Lower current capability limits use to signal-level switching (<100 mA); unsuitable for 500 mA+ DC-DC or motor control. | Select when cost-sensitive, low-current biasing or small-signal amplification is required-not for power switching. |
| PN2907A | TO-92 package (larger footprint); VCE(sat) = 1.6 V @ −500 mA; hFE = 100 min only at −150 mA; no MSL1 rating. | Through-hole mounting and higher VCE(sat) make it incompatible with space-constrained, high-efficiency portable designs. | Choose only for legacy through-hole boards or non-portable industrial controls where thermal and size constraints are relaxed. |
Compared with MMBT3906LT1G and PN2907A, NSV12100XV6T1G delivers 2.7× lower VCE(sat) at 500 mA and 2× higher power dissipation in a 60% smaller footprint-enabling miniaturized, thermally robust switching in battery-critical systems.
Availability
NSV12100XV6T1G is available at Aetrix Electronics and suitable for portable DC-DC converters, battery-powered load switching, and automotive instrument clusters requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for NSV12100XV6T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NSV12100XV6T1G belongs to the e2PowerEdge family-designed specifically for ultra-low-loss, high-current switching in space-constrained, battery-operated systems where thermal efficiency and footprint reduction are primary design drivers.
FAQ
What is the maximum continuous collector current rating for NSV12100XV6T1G?
The NSV12100XV6T1G has a maximum continuous collector current (IC) rating of −1.0 A at TA = 25 °C with adequate PCB copper area (500 mm²). This rating assumes proper thermal management per the datasheet's derating curve of 5.2 mW/°C above 25 °C. At elevated ambient temperatures, the usable current must be reduced accordingly to maintain TJ ≤ 150 °C. The NSV12100XV6T1G supports short-duration peak currents up to −2.0 A.
Does NSV12100XV6T1G support direct drive from a 3.3 V microcontroller GPIO?
Yes, NSV12100XV6T1G supports direct drive from a 3.3 V microcontroller GPIO due to its high DC current gain (hFE ≥ 100 at −500 mA) and low VBE(sat) (0.95–1.15 V). With a 10 kΩ series base resistor, the base current is ~0.24 mA-sufficient to saturate the transistor at ≤500 mA collector current. For 1 A operation, a lower-resistance base path (e.g., 1 kΩ) delivering ~2.3 mA is recommended. The NSV12100XV6T1G eliminates need for buffer stages in most portable applications.
What is the thermal resistance (RJA) of NSV12100XV6T1G under standard PCB conditions?
The NSV12100XV6T1G exhibits RJA = 192 °C/W when mounted on FR-4 PCB with 500 mm² of 1 oz copper (per datasheet Note 2). This value assumes optimal thermal land pattern per Case 463A outline. With minimal copper (100 mm²), RJA rises to 250 °C/W (Note 1). The NSV12100XV6T1G's dual-collector pinout (pins 1,2,5,6) contributes to this improved thermal performance by distributing heat across multiple solder joints.
Is NSV12100XV6T1G suitable for automotive airbag deployment circuits?
Yes, NSV12100XV6T1G is suitable for automotive airbag deployment circuits due to its guaranteed operation from −55 °C to +150 °C, −12 V VCEO rating matching 12 V vehicle systems, and HBM Class 3 ESD robustness (≥8 kV). Its fast switching characteristics and low VCE(sat) minimize energy loss during capacitor discharge into the squib. The NSV12100XV6T1G is explicitly cited in the datasheet for airbag deployment use, confirming its qualification for safety-critical subsystems.
How does the SOT-563 package of NSV12100XV6T1G differ from standard SOT-23 in terms of current handling?
The SOT-563 package of NSV12100XV6T1G features four collector terminals (pins 1,2,5,6) versus one in SOT-23, reducing internal resistance and thermal impedance. This allows NSV12100XV6T1G to sustain −1.0 A continuously-versus ~0.6 A for typical SOT-23 PNP transistors-while maintaining lower VCE(sat). The NSV12100XV6T1G's 650 mW power rating exceeds SOT-23 limits (typically 350–450 mW), making it viable for higher-power portable and automotive loads without board redesign.
NSV12100XV6T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 12 V
- Vce Saturation (Max) @ Ib, Ic:
- 440mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 500mA, 2V
- Power - Max:
- 650 mW
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
NSV12100XV6T1G FAQ
1.How can I place an order for NSV12100XV6T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSV12100XV6T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSV12100XV6T1G reliable?
The price and inventory of NSV12100XV6T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV12100XV6T1G is usually 5 days.
3.What payment methods are accepted for NSV12100XV6T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV12100XV6T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSV12100XV6T1G?
NSV12100XV6T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSV12100XV6T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSV12100XV6T1G?
For technical support, including NSV12100XV6T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV12100XV6T1G requirements.
6.How does Aetrix verify that NSV12100XV6T1G is sourced from the original manufacturer or authorized distributors?
All NSV12100XV6T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV12100XV6T1G meets industry standards.
7.What is the process for return or replacement of NSV12100XV6T1G?
All NSV12100XV6T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSV12100XV6T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSV12100XV6T1G part is unused and in its original packaging.
Return procedure for NSV12100XV6T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSV12100XV6T1G Tags
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