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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSV1C200LT1G

Name: NSV1C200LT1G
Brand: onsemi
SKU: NSV1C200LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSV1C200LT1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: NSV1C200LT1G.pdf

Description:: TRANS PNP 100V 2A SOT23-3

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Product details

Overview

NSV1C200LT1G from onsemi is a PNP bipolar junction transistor (BJT) optimized for low-voltage, high-speed switching in power management circuits. It delivers −100 V V_CEO, −2.0 A continuous collector current, and ultra-low −0.040 V V_CE(sat) at −0.1 A/−0.01 A drive - enabling efficient energy control in battery-powered DC–DC converters and automotive airbag deployment systems.

For engineers reviewing the NSV1C200LT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC−Q101 qualification, SOT−23 package with verified Style 6 pinout (Base–Emitter–Collector), −0.950 V V_BE(sat) at −1.0 A, and 120 MHz f_T for analog amplifier use.

Technical Context

This device belongs to onsemi's e2PowerEdge family of low-saturation-voltage transistors. Its PNP architecture supports high-side switching in portable power rails, with linear gain (h_FE = 50–240 across −10 mA to −2.0 A) enabling direct drive from PMU outputs without external amplification.

Thermal performance is defined by two derating profiles: 490 mW at 25 °C on 100 mm² FR-4 (R_JA = 255 °C/W), and 710 mW on 500 mm² FR-4 (R_JA = 176 °C/W). Junction temperature range spans −55 °C to +150 °C, supporting under-hood automotive operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - supports high-side switching in 48 V and 60 V automotive subsystems without breakdown risk
I_C (continuous)	−2.0 A - enables direct control of small solenoids, LED strings, or motor drivers up to ~25 W
V_CE(sat) @ −0.1 A	−0.040 V - reduces conduction loss to < 4 mW, critical for thermally constrained portable designs
h_FE @ −1.0 A	80 min - ensures stable biasing in analog amplifier configurations with predictable gain linearity
f_T	120 MHz - supports high-frequency PWM switching up to ~10 MHz with minimal phase lag
T_J range	−55 °C to +150 °C - meets AEC−Q101 requirements for instrument cluster and airbag electronics

Pinout & Package

SOT−23 (TO−236), Case 318, Style 6: 2.90 × 1.30 × 1.00 mm body with 1.90 mm lead pitch. Pb-free, RoHS-compliant, tape-and-reel packaging (3000 units/reel).

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires −0.1 A base drive for full −2.0 A saturation
2	Emitter	Common reference terminal; connected to positive rail in high-side switch configuration
3	Collector	Output terminal sourcing current to load; voltage swing limited to −100 V maximum

Key Features

Feature	Design Value
AEC−Q101 qualified	Validated for automotive safety-critical applications including airbag deployment and instrument clusters
Ultra-low V_CE(sat)	−0.040 V at light load enables >99.5% efficiency in 3.3 V/5 V DC–DC pre-regulators
High h_FE linearity	h_FE remains ≥50 up to −2.0 A, simplifying bias network design in analog gain stages
−55 °C to +150 °C operation	Eliminates need for external thermal derating in engine bay or industrial control enclosures

Applications

Battery-Powered DC–DC Converters	Automotive Airbag Deployment Circuits
Use Scenario: Step-down conversion in smartphones and digital cameras requiring compact, high-efficiency power regulation. IC Role / Device Role / Timing Role: High-side PNP switch controlling synchronous rectifier gate drive or output stage current path. Use Value: −0.040 V V_CE(sat) minimizes I²R loss at 1–2 A loads, extending battery runtime by up to 8% versus standard PNP transistors.	Use Scenario: Triggering pyrotechnic squibs during crash events where reliability and fast turn-on are non-negotiable. IC Role / Device Role / Timing Role: Final-stage current amplifier delivering precise −2.0 A pulse to squib load within < 100 μs. Use Value: AEC−Q101 qualification and −100 V V_CEO ensure functional safety compliance and immunity to load dump transients.
Portable Device Power Management	Low-Voltage Motor Control (Disc Drives)
Use Scenario: Load switching for backlight LEDs and USB port power in PDAs and MP3 players. IC Role / Device Role / Timing Role: Low-loss PNP pass element enabling soft-start and overcurrent protection via base current sensing. Use Value: −0.950 V V_BE(sat) allows direct interface with 1.8 V/3.3 V PMU GPIOs without level-shifting circuitry.	Use Scenario: Directional control and braking in 5 V spindle motors used in optical disc drives. IC Role / Device Role / Timing Role: H-bridge half-bridge driver component managing bidirectional current flow through motor windings. Use Value: 120 MHz f_T supports PWM frequencies >5 MHz, reducing audible motor noise and improving torque resolution.

Battery-Powered DC–DC Converters

Automotive Airbag Deployment Circuits

Use Scenario: Step-down conversion in smartphones and digital cameras requiring compact, high-efficiency power regulation.

IC Role / Device Role / Timing Role: High-side PNP switch controlling synchronous rectifier gate drive or output stage current path.

Use Value: −0.040 V V_CE(sat) minimizes I²R loss at 1–2 A loads, extending battery runtime by up to 8% versus standard PNP transistors.

Use Scenario: Triggering pyrotechnic squibs during crash events where reliability and fast turn-on are non-negotiable.

IC Role / Device Role / Timing Role: Final-stage current amplifier delivering precise −2.0 A pulse to squib load within < 100 μs.

Use Value: AEC−Q101 qualification and −100 V V_CEO ensure functional safety compliance and immunity to load dump transients.

Portable Device Power Management

Low-Voltage Motor Control (Disc Drives)

Use Scenario: Load switching for backlight LEDs and USB port power in PDAs and MP3 players.

IC Role / Device Role / Timing Role: Low-loss PNP pass element enabling soft-start and overcurrent protection via base current sensing.

Use Value: −0.950 V V_BE(sat) allows direct interface with 1.8 V/3.3 V PMU GPIOs without level-shifting circuitry.

Use Scenario: Directional control and braking in 5 V spindle motors used in optical disc drives.

IC Role / Device Role / Timing Role: H-bridge half-bridge driver component managing bidirectional current flow through motor windings.

Use Value: 120 MHz f_T supports PWM frequencies >5 MHz, reducing audible motor noise and improving torque resolution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT4403LT1G	V_CEO = −40 V, V_CE(sat) = −0.2 V @ −0.5 A - lower voltage rating and higher saturation loss	Not suitable for 48 V automotive or 100 V industrial bus applications	Select only for cost-sensitive 5–12 V consumer electronics where −100 V margin is unnecessary
PN2907A	TO-92 package, V_CEO = −60 V, V_CE(sat) = −0.3 V @ −0.5 A - larger footprint and inferior thermal resistance	Limited to low-power prototyping; incompatible with automated SMT assembly	Prefer only for hand-soldered evaluation or legacy board refresh where SOT−23 rework is impractical

Compared with MMBT4403LT1G and PN2907A, the NSV1C200LT1G provides superior voltage headroom, 5× lower conduction loss, and AEC−Q101 certification - making it the sole choice for production-grade automotive and high-efficiency portable power designs.

Availability

NSV1C200LT1G is available at Aetrix Electronics and suitable for battery-powered DC–DC converters, automotive airbag deployment systems, and portable device power management requiring stable component supply and long-term lifecycle support.

Supply support for NSV1C200LT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud, and IoT applications.

The e2PowerEdge family - to which NSV1C200LT1G belongs - was designed specifically for high-efficiency, low-voltage switching in space-constrained portable and automotive power systems.

FAQ

What is the maximum continuous collector current rating for NSV1C200LT1G?

The NSV1C200LT1G has a maximum continuous collector current (I_C) rating of −2.0 A at T_A = 25 °C with adequate PCB copper area (500 mm²). Derating applies above 25 °C per the 4.3 mW/°C coefficient specified in Note 2 of the datasheet. This rating enables robust operation in 5 V/12 V motor control and DC–DC converter output stages where NSV1C200LT1G serves as the primary switching element.

Is NSV1C200LT1G qualified for automotive applications?

Yes, NSV1C200LT1G is AEC−Q101 qualified and PPAP capable, with explicit validation for automotive airbag deployment and instrument cluster systems. Its −55 °C to +150 °C operating range, −100 V V_CEO, and onsemi's automotive-grade process control ensure reliability under harsh vehicle environments - a key differentiator confirmed in the official NSS1C200L/D datasheet revision 7.

What is the V_CE(sat) of NSV1C200LT1G at full rated current?

At −2.0 A collector current and −0.200 A base drive (IC/IB = 10), the NSV1C200LT1G exhibits a typical V_CE(sat) of −0.250 V. This value is measured under pulsed conditions (300 μs, ≤2% duty cycle) and reflects real-world conduction loss in high-current switching nodes - critical for thermal design when NSV1C200LT1G operates in DC–DC converter output stages or motor H-bridges.

Which package type and pin configuration does NSV1C200LT1G use?

NSV1C200LT1G uses the SOT−23 (TO−236) package, Case 318, Style 6: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This configuration is explicitly documented in the mechanical drawings and marking diagram of the NSS1C200L/D datasheet, ensuring correct PCB layout and orientation during automated assembly of NSV1C200LT1G into high-density portable and automotive modules.

Does NSV1C200LT1G support analog amplifier applications?

Yes, NSV1C200LT1G supports analog amplifier applications due to its linear DC current gain (h_FE) profile - ranging from 150 at −10 mA to 50 at −2.0 A - and −0.850 V V_BE(on) at −1.0 A. These characteristics enable stable biasing and predictable gain in Class-A and AB audio preamplifiers or sensor signal conditioning circuits where NSV1C200LT1G functions as an active load or gain stage transistor.

NSV1C200LT1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 500mA, 2V

Power - Max:: 490 mW

Frequency - Transition:: 120MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

NSV1C200LT1G FAQ

1.How can I place an order for NSV1C200LT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSV1C200LT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSV1C200LT1G reliable?

The price and inventory of NSV1C200LT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV1C200LT1G is usually 5 days.

3.What payment methods are accepted for NSV1C200LT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV1C200LT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSV1C200LT1G?

NSV1C200LT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSV1C200LT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSV1C200LT1G?

For technical support, including NSV1C200LT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV1C200LT1G requirements.

6.How does Aetrix verify that NSV1C200LT1G is sourced from the original manufacturer or authorized distributors?

All NSV1C200LT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV1C200LT1G meets industry standards.

7.What is the process for return or replacement of NSV1C200LT1G?

All NSV1C200LT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSV1C200LT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSV1C200LT1G part is unused and in its original packaging.

Return procedure for NSV1C200LT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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