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onsemi NSV1C200MZ4T1G
- Part No.:
- NSV1C200MZ4T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
NSV1C200MZ4T1G.pdf
- Description:
- TRANS PNP 100V 2A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:2,501
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Product details
Overview
NSV1C200MZ4T1G from onsemi is a PNP bipolar junction transistor designed for high-efficiency, low-voltage switching in power management circuits. It delivers −100 V VCEO, −2.0 A continuous collector current, and ultra-low −0.040 V VCE(sat) at −0.1 A/−0.01 A drive, enabling compact DC–DC converters in battery-powered portable electronics.
For engineers reviewing the NSV1C200MZ4T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified AEC-Q101 qualification, SOT-223 thermal performance (64 °C/W on 645 mm² copper), and linear hFE behavior across −10 mA to −2.0 A for analog amplifier use.
Technical Context
This device belongs to onsemi's e2PowerEdge family of low-saturation-voltage PNP transistors. Its architecture emphasizes high DC current gain (hFE = 150 min at −10 mA) and stable gain linearity across wide current ranges, supporting both digital switching and analog amplification roles without external bias compensation.
The transistor features dual thermal ratings: 800 mW with 155 °C/W RJA on minimal FR-4 (7.6 mm²), and 2.0 W with 64 °C/W RJA on large copper (645 mm²). Its fT = 120 MHz and Cibo = 200 pF support high-speed switching up to several tens of MHz in optimized layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −100 V - supports operation in 48 V and 60 V bus systems with margin |
| IC (cont.) | −2.0 A - enables direct drive of medium-power loads like motor drivers or LED strings |
| VCE(sat) | −0.040 V @ −0.1 A/−0.01 A - reduces conduction loss by >50% vs. standard PNP transistors |
| hFE | 150 min @ −10 mA - allows direct interface with low-current PMU outputs without base resistors |
| fT | 120 MHz - supports switching frequencies up to ~10–20 MHz in hard-switched topologies |
| RJA | 64 °C/W @ 645 mm² - enables 2.0 W dissipation in thermally enhanced PCB layouts |
| AEC-Q101 | Qualified - validated for automotive applications including airbag deployment and instrument clusters |
Pinout & Package
SOT-223 (Case 318E, Style 1) surface-mount package with exposed collector tab for thermal enhancement and mechanical stability. Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base, Pin 4 = Collector (dual-collector configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E) | Emitter | Main current exit path; connected to system ground or negative rail in high-side switch configurations |
| 2 (C) | Collector | Primary current input terminal; electrically tied to Pin 4 for improved thermal and current handling |
| 3 (B) | Base | Control input requiring −0.1 A max drive; compatible with standard GPIO or PMU output stages |
| 4 (C) | Collector | Second collector connection - soldered to thermal pad for 64 °C/W RJA performance |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | −0.040 V at light load enables >95% efficiency in 3.3 V–5 V DC–DC stages |
| Linear hFE curve | hFE remains predictable from −10 mA to −2.0 A - simplifies analog amplifier design without feedback trimming |
| AEC-Q101 qualification | Validated for automotive safety-critical subsystems including airbag control modules |
| Dual-collector SOT-223 | Pins 2 and 4 both connect to collector - improves thermal transfer and current sharing in high-reliability layouts |
| Pb-free, RoHS-compliant | Meets global environmental regulations without derating or special handling requirements |
Applications
| Battery-Powered DC–DC Conversion | Automotive Instrument Cluster Power |
|---|---|
Use Scenario: Step-down regulation in smartphones and digital cameras where board space and thermal budget are constrained. IC Role / Device Role / Timing Role: High-side PNP switch in synchronous or pseudo-synchronous buck converter topologies. Use Value: −0.040 V VCE(sat) cuts conduction loss by 60% vs. legacy PNP devices, extending battery runtime by measurable margins. | Use Scenario: Local 5 V or 3.3 V supply generation for LCD backlight drivers and microcontroller peripherals in dashboards. IC Role / Device Role / Timing Role: Low-noise, AEC-Q101-qualified pass element in linear post-regulators feeding sensitive analog circuitry. Use Value: Stable hFE and −0.95 V VBE(sat) ensure consistent dropout voltage across temperature and lifetime. |
| Low-Voltage Motor Control | Analog Signal Amplification |
Use Scenario: H-bridge half-bridge driver in disc drive spindle or fan control modules operating from 5 V–12 V rails. IC Role / Device Role / Timing Role: Complementary PNP switch paired with N-channel MOSFETs in compact motor gate drivers. Use Value: −2.0 A IC rating and 120 MHz fT support PWM frequencies up to 20 kHz with minimal switching loss. | Use Scenario: Current-source biasing and small-signal amplification in sensor front-ends and audio preamps. IC Role / Device Role / Timing Role: Linear-mode PNP active load or emitter-follower stage with predictable gain slope. Use Value: Linear hFE response across −10 mA to −1.0 A eliminates need for gain-compensation networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD2955RLG | VCEO = −60 V, VCE(sat) = −1.2 V @ −4 A - higher saturation voltage, lower breakdown | Not qualified for automotive; suited for industrial non-safety power supplies | Select when cost sensitivity outweighs efficiency and AEC-Q101 compliance needs |
| PN2907A | IC = −600 mA, VCE(sat) = −0.3 V @ −150 mA - lower current, higher VCE(sat), TO-92 package | Limited to low-power signal switching; no thermal pad or automotive qualification | Choose only for prototyping or low-volume consumer products with relaxed thermal constraints |
Compared with MJD2955RLG and PN2907A, NSV1C200MZ4T1G provides superior efficiency via −0.040 V VCE(sat), automotive-grade reliability, and SOT-223 thermal scalability - making it the preferred choice for production designs demanding density, efficiency, and qualification.
Availability
NSV1C200MZ4T1G is available at Aetrix Electronics and suitable for battery-powered DC–DC converters, automotive instrument cluster power supplies, and low-voltage motor control systems requiring stable component supply and long-term manufacturability.
Supply support for NSV1C200MZ4T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.
The e2PowerEdge family, which includes NSV1C200MZ4T1G, was engineered specifically for high-efficiency, low-voltage switching in portable and automotive power systems - prioritizing ultra-low saturation voltage and AEC-Q101 compliance.
FAQ
What is the maximum continuous collector current rating for NSV1C200MZ4T1G?
The NSV1C200MZ4T1G has a maximum continuous collector current (IC) rating of −2.0 A at TA = 25 °C with adequate PCB copper area (645 mm²). Derating applies above 25 °C per the 15.6 mW/°C specification. This rating is confirmed in the Thermal Characteristics table of the official onsemi datasheet (Rev. 7, April 2024), under Note 2.
Is NSV1C200MZ4T1G qualified for automotive applications?
Yes, NSV1C200MZ4T1G is AEC-Q101 qualified and PPAP capable, as explicitly stated in the Features section of the onsemi datasheet. The "NSV" prefix denotes automotive-grade manufacturing controls, and the device is cited for use in airbag deployment and instrument clusters - confirming its suitability for safety-critical automotive subsystems.
What is the typical VCE(sat) of NSV1C200MZ4T1G at 1.0 A collector current?
The typical VCE(sat) of NSV1C200MZ4T1G at −1.0 A collector current and −0.100 A base current is −0.125 V, per the Electrical Characteristics table (Note 3, pulsed conditions). This value is measured under standardized test conditions and reflects the device's ultra-low saturation behavior essential for high-efficiency switching.
Which package does NSV1C200MZ4T1G use, and how is the thermal pad connected?
NSV1C200MZ4T1G uses the SOT-223 package (Case 318E, Style 1) with an exposed collector thermal pad. Pins 2 and 4 are both collector terminals, and the pad must be soldered to a large copper pour (645 mm² minimum) to achieve the 64 °C/W RJA rating and 2.0 W power dissipation capability.
Does NSV1C200MZ4T1G support analog amplifier operation?
Yes, NSV1C200MZ4T1G supports analog amplifier operation due to its linear DC current gain (hFE) characteristic across collector currents from −10 mA to −2.0 A, as shown in Figures 4–5 of the datasheet. Its stable beta enables predictable gain in emitter-follower and current-source configurations without external compensation.
NSV1C200MZ4T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 220mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 500mA, 2V
- Power - Max:
- 800 mW
- Frequency - Transition:
- 120MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223 (TO-261)
NSV1C200MZ4T1G FAQ
1.How can I place an order for NSV1C200MZ4T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSV1C200MZ4T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSV1C200MZ4T1G reliable?
The price and inventory of NSV1C200MZ4T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV1C200MZ4T1G is usually 5 days.
3.What payment methods are accepted for NSV1C200MZ4T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV1C200MZ4T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSV1C200MZ4T1G?
NSV1C200MZ4T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSV1C200MZ4T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSV1C200MZ4T1G?
For technical support, including NSV1C200MZ4T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV1C200MZ4T1G requirements.
6.How does Aetrix verify that NSV1C200MZ4T1G is sourced from the original manufacturer or authorized distributors?
All NSV1C200MZ4T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV1C200MZ4T1G meets industry standards.
7.What is the process for return or replacement of NSV1C200MZ4T1G?
All NSV1C200MZ4T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSV1C200MZ4T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSV1C200MZ4T1G part is unused and in its original packaging.
Return procedure for NSV1C200MZ4T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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