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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSV1C300ET4G

Name: NSV1C300ET4G
Brand: onsemi
SKU: NSV1C300ET4G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSV1C300ET4G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: NSV1C300ET4G.pdf

Description:: TRANS PNP 100V 3A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NSV1C300ET4G from onsemi is a PNP bipolar junction transistor rated for 100 V V_CEO, 3.0 A continuous collector current, and ultra-low saturation voltage (V_CE(sat) = −0.400 V at I_C = −3.0 A, I_B = −0.300 A), designed for high-efficiency DC-DC converters and battery-powered motor control in portable electronics.

For engineers reviewing the NSV1C300ET4G datasheet, pinout, applications, or equivalent options, this device offers AEC-Q101 qualification, Pb-free DPAK packaging, and verified low-V_CE(sat) performance across −55 °C to +150 °C junction temperature range - critical for automotive instrument clusters and disc drive motor drivers.

Technical Context

This PNP transistor operates with linear gain (h_FE = 50–360) and delivers high current gain at low base drive, enabling direct interfacing with PMU outputs without external amplification. Its f_T = 100 MHz supports fast switching in power management circuits.

The device features dual collector terminals (Pins 2 & 4) in a thermally optimized DPAK package, achieving R_JC = 3.8 °C/W and R_JA = 59.5 °C/W on FR-4 board (400 mm², 1 oz Cu), ensuring stable thermal performance under pulsed load conditions up to 6.0 A peak.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - Withstands 100 V reverse collector-emitter voltage before breakdown, suitable for 12–48 V system rails.
I_C (continuous)	−3.0 A - Supports sustained 3 A load current in motor drivers and DC-DC output stages without derating at T_C ≤ 25 °C.
V_CE(sat)	−0.400 V @ I_C = −3.0 A - Minimizes conduction loss (1.2 W dissipation at full load), improving efficiency in high-current switching nodes.
h_FE	50–360 - Wide DC current gain range enables flexible base drive design; ≥120 at I_C = −1.0 A ensures reliable saturation with low base current.
f_T	100 MHz - Enables stable operation in high-frequency PWM control loops up to several MHz with adequate phase margin.
R_JA	59.5 °C/W - Defines thermal rise above ambient on standard PCB layout; requires heatsinking or airflow for >1.5 W continuous dissipation.

Pinout & Package

DPAK (Case 369C, Style 1), surface-mount package with exposed drain pad (Pin 2 & 4 tied internally to collector), 6.10 × 6.54 × 2.28 mm footprint, Pb-free and RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input; accepts −0.5 A max base current to drive full collector current with guaranteed saturation.
2	Collector	Main high-current output terminal; electrically connected to Pin 4 for enhanced thermal and current handling.
3	Emitter	Reference node for PNP operation; connects to positive rail in high-side switch configurations.
4	Collector	Secondary collector terminal; paralleled with Pin 2 to reduce bond wire resistance and improve thermal path to PCB copper.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including airbag deployment and instrument clusters per stress test requirements.
Ultra-low V_CE(sat)	−0.070 V @ I_C = −0.1 A enables <10 mW conduction loss in standby mode, extending battery life in portable devices.
Dual collector terminals	Pins 2 & 4 reduce effective on-resistance and thermal impedance, supporting higher pulse currents without localized heating.
High h_FE linearity	h_FE remains ≥120 up to I_C = −1.0 A, allowing predictable base drive sizing and minimizing gate driver complexity in analog amplifier stages.

Applications

DC-DC Converter Output Stage	Automotive Instrument Cluster Driver
Use Scenario: High-efficiency synchronous buck converter output switch in 5–24 V portable power supplies. IC Role / Device Role / Timing Role: PNP high-side switch controlling inductor current flow during low-side FET off-time. Use Value: V_CE(sat) ≤ −0.400 V at 3 A reduces conduction loss by >40% vs. standard PNP transistors, increasing conversion efficiency to >92%.	Use Scenario: Backlight dimming and gauge motor actuation in vehicle dashboard systems operating at 12 V nominal. IC Role / Device Role / Timing Role: Current-controlled driver for LED strings and small brushed motors requiring precise analog-level current regulation. Use Value: Linear h_FE behavior and −1.0 V V_BE(sat) enable accurate current mirroring from microcontroller DAC outputs without additional op-amps.
Portable Device Motor Control	Disc Drive Spindle Driver
Use Scenario: Low-voltage motor driver in Bluetooth speakers and handheld scanners powered by single-cell Li-ion batteries. IC Role / Device Role / Timing Role: H-bridge half-bridge element delivering bidirectional 2–3 A peak current to coreless DC motors. Use Value: Dual collector pins and R_JC = 3.8 °C/W allow 3 A pulses at 20% duty cycle without exceeding 150 °C junction temperature on compact PCBs.	Use Scenario: Spindle motor commutation circuit in 2.5″ HDDs and optical drives requiring robust 100 V blocking capability. IC Role / Device Role / Timing Role: High-voltage PNP switch in three-phase driver IC front-end, handling back-EMF transients up to −140 V V_CBO. Use Value: V_CBO = −140 V exceeds typical spindle flyback voltages, eliminating need for external clamping diodes and reducing BOM count.

DC-DC Converter Output Stage

Automotive Instrument Cluster Driver

Use Scenario: High-efficiency synchronous buck converter output switch in 5–24 V portable power supplies.

IC Role / Device Role / Timing Role: PNP high-side switch controlling inductor current flow during low-side FET off-time.

Use Value: V_CE(sat) ≤ −0.400 V at 3 A reduces conduction loss by >40% vs. standard PNP transistors, increasing conversion efficiency to >92%.

Use Scenario: Backlight dimming and gauge motor actuation in vehicle dashboard systems operating at 12 V nominal.

IC Role / Device Role / Timing Role: Current-controlled driver for LED strings and small brushed motors requiring precise analog-level current regulation.

Use Value: Linear h_FE behavior and −1.0 V V_BE(sat) enable accurate current mirroring from microcontroller DAC outputs without additional op-amps.

Portable Device Motor Control

Disc Drive Spindle Driver

Use Scenario: Low-voltage motor driver in Bluetooth speakers and handheld scanners powered by single-cell Li-ion batteries.

IC Role / Device Role / Timing Role: H-bridge half-bridge element delivering bidirectional 2–3 A peak current to coreless DC motors.

Use Value: Dual collector pins and R_JC = 3.8 °C/W allow 3 A pulses at 20% duty cycle without exceeding 150 °C junction temperature on compact PCBs.

Use Scenario: Spindle motor commutation circuit in 2.5″ HDDs and optical drives requiring robust 100 V blocking capability.

IC Role / Device Role / Timing Role: High-voltage PNP switch in three-phase driver IC front-end, handling back-EMF transients up to −140 V V_CBO.

Use Value: V_CBO = −140 V exceeds typical spindle flyback voltages, eliminating need for external clamping diodes and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSS1C300ET4G	Same die, non-automotive grade; lacks NSV prefix, AEC-Q101 qualification, and PPAP documentation.	Approved for industrial/commercial use only; not validated for automotive safety-critical functions.	Select when cost sensitivity outweighs automotive compliance requirements and thermal specs match.
NSV1C301ET4G	Complementary NPN device in same e2PowerEdge family; identical package, V_CEO = 100 V, I_C = 3.0 A, but V_CE(sat) = −0.350 V (NPN polarity).	Used in push-pull or complementary output stages; not interchangeable in PNP-only topologies.	Choose for NPN-side switching in dual-transistor configurations where matched thermal and gain characteristics are required.

Compared with NSS1C300ET4G and NSV1C301ET4G, the NSV1C300ET4G provides AEC-Q101 assurance and tighter process control for automotive deployments, while maintaining identical electrical performance and thermal metrics - making it the sole choice when functional safety and traceability are mandatory.

Availability

NSV1C300ET4G is available at Aetrix Electronics and suitable for DC-DC converters, automotive instrument clusters, and portable motor control applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for NSV1C300ET4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The NSV1C300ET4G belongs to the e2PowerEdge family of low-V_CE(sat) transistors, engineered specifically for high-efficiency, high-reliability power switching in space-constrained and thermally demanding environments.

FAQ

What is the maximum continuous collector current rating for NSV1C300ET4G?

The NSV1C300ET4G is rated for −3.0 A continuous collector current at T_C = 25 °C. Derating applies above 25 °C at 0.26 W/°C for case-mounted operation. At ambient temperature (T_A = 25 °C), the limit drops to 2.1 W total power dissipation, corresponding to ~1.2 A continuous under typical PCB conditions.

Is NSV1C300ET4G pin-compatible with NSS1C300ET4G?

Yes, NSV1C300ET4G and NSS1C300ET4G share identical DPAK package (Case 369C, Style 1), pinout (Pin 1 = Base, Pins 2 & 4 = Collector, Pin 3 = Emitter), and mechanical dimensions. The NSV prefix denotes automotive qualification - no PCB layout changes are needed when upgrading from NSS1C300ET4G to NSV1C300ET4G.

What does the "NSV" prefix indicate for NSV1C300ET4G?

The "NSV" prefix in NSV1C300ET4G identifies it as an automotive-grade variant meeting AEC-Q101 reliability standards and PPAP-capable manufacturing. It includes unique site and process controls, extended temperature validation (−55 °C to +150 °C), and full traceability - distinguishing it from commercial-grade NSS1C300ET4G.

Can NSV1C300ET4G be used in linear amplifier applications?

Yes, NSV1C300ET4G supports linear operation due to its specified h_FE linearity (120–360 across I_C = −0.1 A to −1.0 A) and V_BE(on) = −0.900 V at I_C = −1.0 A. Its consistent beta enables stable biasing in Class-A audio preamplifiers and sensor signal conditioning circuits.

What is the thermal resistance from junction to case (R_JC) for NSV1C300ET4G?

The NSV1C300ET4G has a measured R_JC of 3.8 °C/W when mounted on minimum recommended copper pads. This value reflects heat transfer from the silicon die to the exposed collector pad (Pins 2 & 4), enabling efficient thermal coupling to PCB ground planes or heatsinks in high-power switching designs.

NSV1C300ET4G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 1A, 2V

Power - Max:: 2.1 W

Frequency - Transition:: 100MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

NSV1C300ET4G FAQ

1.How can I place an order for NSV1C300ET4G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSV1C300ET4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSV1C300ET4G reliable?

The price and inventory of NSV1C300ET4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV1C300ET4G is usually 5 days.

3.What payment methods are accepted for NSV1C300ET4G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV1C300ET4G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSV1C300ET4G?

NSV1C300ET4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSV1C300ET4G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSV1C300ET4G?

For technical support, including NSV1C300ET4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV1C300ET4G requirements.

6.How does Aetrix verify that NSV1C300ET4G is sourced from the original manufacturer or authorized distributors?

All NSV1C300ET4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV1C300ET4G meets industry standards.

7.What is the process for return or replacement of NSV1C300ET4G?

All NSV1C300ET4G units undergo pre-shipment inspection (PSI). If there is an issue with NSV1C300ET4G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSV1C300ET4G part is unused and in its original packaging.

Return procedure for NSV1C300ET4G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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