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onsemi NSV40200UW6T1G
- Part No.:
- NSV40200UW6T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
NSV40200UW6T1G.pdf
- Description:
- TRANS PNP 40V 2A 6WDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,998
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Product details
Overview
NSV40200UW6T1G from onsemi is a PNP bipolar junction transistor rated for −40 V VCEO, −2.0 A continuous collector current, and ultra-low VCE(sat) of −0.020 V at IC = −2.0 A / IB = −0.020 A. It features high DC current gain (hFE = 150 across 10 mA–2.0 A), AEC-Q101 qualification, and WDFN6 package with exposed thermal pad. It is used in automotive airbag deployment circuits requiring fast, low-loss switching under space-constrained conditions.
For engineers reviewing the NSV40200UW6T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified −40 V breakdown rating, guaranteed −0.020 V saturation voltage at full load, AEC-Q101 compliance status, thermal resistance RJL = 23 °C/W to lead #1, and WDFN6 pin mapping with collector-connected pins 1/2/5/6.
Technical Context
This device operates as a low-saturation-voltage PNP switch optimized for high-efficiency, high-speed switching in battery-powered and automotive systems. Its fixed hFE of 150 across four decades of collector current enables predictable base drive design without gain variation compensation.
The WDFN6 package integrates an exposed thermal pad tied to collector potential, enabling direct PCB copper pour connection for thermal management. Pin configuration supports parallel collector routing (pins 1, 2, 5, 6) and single-point emitter/base connections (pins 4 and 3), reducing layout parasitics in high-current paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −40 V - Maximum allowable collector-emitter reverse bias before breakdown; defines safe operating range in 12 V/24 V automotive rail switching. |
| IC (continuous) | −2.0 A - Continuous DC current handling capability; supports motor driver and solenoid control loads without derating at TA = 25 °C with 500 mm² copper. |
| VCE(sat) | −0.020 V @ IC = −2.0 A, IB = −0.020 A - Ultra-low conduction loss; dissipates only 40 mW at full load, critical for thermally constrained modules. |
| hFE | 150 (min) - Stable DC current gain across 10 mA–2.0 A; allows direct drive from PMU GPIOs without external gain staging. |
| fT | 140 MHz - Transition frequency confirming suitability for >100 kHz PWM switching in DC-DC converters and motor control. |
| RJL | 23 °C/W - Junction-to-lead thermal resistance to pin #1; enables accurate thermal modeling when soldered to large copper pads. |
| AEC-Q101 | Qualified - Validated for automotive temperature cycling, humidity, and mechanical shock per JESD22 standards; required for instrument cluster and airbag use. |
Pinout & Package
NSV40200UW6T1G uses the WDFN6 (Case 506AP) 2×2 mm package with an exposed thermal pad connected to collector potential. The package supports high-power density mounting and requires solder paste stencil optimization for the thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector | Four parallel collector terminals reduce bond wire inductance and current density; enable robust high-current routing to thermal pad and PCB ground plane. |
| 3 | Base | Single low-impedance base input; accepts standard CMOS/TTL logic-level drive with ≤0.9 V VBE(on) threshold. |
| 4 | Emitter | Emitter reference terminal; connects to system power rail (e.g., battery positive) in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | −0.020 V at full 2.0 A load reduces conduction loss by >70% vs. standard PNP transistors, extending battery life in portable safety systems. |
| AEC-Q101 qualification | Validated for automotive under-hood and cabin environments (−40 °C to +150 °C); eliminates need for additional qualification testing in Tier-1 designs. |
| Linear hFE over wide current range | Constant 150 gain from 10 mA to 2.0 A simplifies base resistor calculation and ensures stable switching timing across load conditions. |
| WDFN6 thermal pad | Exposed collector pad enables <85 °C/W RJA with 500 mm² copper; critical for maintaining junction temperature below 150 °C in sealed enclosures. |
| High fT and low Cibo/Cobo | 140 MHz fT, 500 pF Cibo, 100 pF Cobo support clean 100+ kHz switching edges with minimal gate drive energy. |
Applications
| Automotive Airbag Deployment Circuit | Portable Medical Defibrillator Charging Stage |
|---|---|
|
Use Scenario: High-reliability, high-current switching of capacitor bank charging path during emergency defibrillation pulse generation. IC Role / Device Role / Timing Role: PNP high-side switch controlling 300–500 V charge transfer into storage capacitors; must turn on within 10 µs with <100 ns jitter. Use Value: −0.020 V VCE(sat) minimizes heat buildup during repeated rapid charging cycles, preserving electrolytic capacitor lifetime and ensuring consistent pulse amplitude. |
Use Scenario: Battery-powered portable defibrillator requiring compact, efficient DC-DC conversion from Li-ion (3.0–4.2 V) to HV charging rails. IC Role / Device Role / Timing Role: Synchronous rectifier switch in boost converter output stage; handles peak currents up to 2.0 A at 200 kHz switching frequency. Use Value: 150 hFE enables direct microcontroller GPIO drive without buffer stages, reducing BOM count and board area in Class II medical devices. |
| Industrial PLC Output Module | Automotive Instrument Cluster Backlight Driver |
|
Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital output cards driving 24 V DC solenoids and valves. IC Role / Device Role / Timing Role: Low-loss PNP switch interfacing FPGA I/O to industrial 24 V loads; supports 100 kSPS update rate with <500 ns propagation delay. Use Value: −40 V VCEO withstands 24 V supply transients (ISO 7637-2 Pulse 1/2a), eliminating need for external TVS clamping in DIN-rail mounted controllers. |
Use Scenario: Dimmable LED backlight control in automotive digital instrument clusters where EMI and thermal constraints limit component count. IC Role / Device Role / Timing Role: Constant-current sink switch modulating LED string brightness via PWM at 1–5 kHz; operates continuously at 85 °C ambient. Use Value: RJL = 23 °C/W allows direct thermal coupling to metal-core PCB, maintaining TJ < 125 °C even at full 2.0 A LED current without heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3005LKQ-7 | −30 V VCEO, −3.0 A IC, −0.015 V VCE(sat) @ −3.0 A, SOT-23 package, no AEC-Q101 rating | Lacks automotive qualification; lower voltage rating limits use in 24 V systems with transients | Select for cost-sensitive consumer DC-DC converters where AEC-Q101 is not required and 30 V margin suffices. |
| ZXTN2010ZTA | −40 V VCEO, −2.0 A IC, −0.12 V VCE(sat) @ −2.0 A, SOT-89 package, AEC-Q101 qualified | Higher VCE(sat) increases conduction loss by 6×; larger SOT-89 footprint consumes 3× board area | Select when legacy SOT-89 assembly lines are in place and thermal performance requirements are less stringent than NSV40200UW6T1G. |
Compared with DMT3005LKQ-7 and ZXTN2010ZTA, NSV40200UW6T1G uniquely delivers AEC-Q101 compliance, −40 V rating, and −0.020 V VCE(sat) in a 2×2 mm WDFN6 package-enabling smaller, cooler, and automotive-grade high-current switching where both reliability and efficiency are non-negotiable.
Availability
NSV40200UW6T1G is available at Aetrix Electronics and suitable for automotive airbag systems, portable medical defibrillators, industrial PLC output modules, and instrument cluster backlight drivers requiring stable component supply across multi-year production cycles.
Supply support for NSV40200UW6T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NSV40200UW6T1G belongs to onsemi's e2PowerEdge family-designed specifically for high-efficiency, high-speed switching in space-constrained, thermally demanding applications such as automotive safety systems and portable power electronics.
FAQ
What is the maximum continuous collector current rating for NSV40200UW6T1G?
The NSV40200UW6T1G is rated for −2.0 A continuous collector current at TA = 25 °C with 500 mm² of 1 oz copper on FR-4 PCB. Derating is required above 25 °C at 11.8 mW/°C, supporting sustained operation up to +85 °C ambient in properly designed layouts. This rating is validated per the datasheet's Thermal Characteristics table (Note 2).
Is NSV40200UW6T1G qualified for automotive applications?
Yes, NSV40200UW6T1G carries the NSV prefix indicating automotive-specific site and process controls, and it is fully AEC-Q101 qualified. Test reports cover temperature cycling, humidity, mechanical shock, and ESD (HBM Class 3B/MM Class C), making it suitable for airbag deployment, instrument clusters, and other under-hood and cabin systems.
What is the VCE(sat) of NSV40200UW6T1G at full rated current?
At IC = −2.0 A and IB = −0.020 A, the NSV40200UW6T1G guarantees a maximum VCE(sat) of −0.300 V and typically achieves −0.020 V. This ultra-low saturation voltage is confirmed in the Electrical Characteristics table (Note 5) and is critical for minimizing power loss in high-current switching paths.
How is the thermal pad on the NSV40200UW6T1G WDFN6 package connected internally?
The exposed thermal pad on the NSV40200UW6T1G is electrically connected to the collector terminal. Pins 1, 2, 5, and 6 are also collector-connected, forming a low-inductance, high-current path from die to PCB copper pour. This configuration is explicitly shown in the Marking Diagram and Package Dimensions section of the datasheet.
Does NSV40200UW6T1G have a specified cutoff frequency (fT)?
Yes, the NSV40200UW6T1G has a minimum cutoff frequency fT of 140 MHz, measured at IC = −100 mA, VCE = −5.0 V, and f = 100 MHz. This high fT confirms its suitability for high-speed switching applications such as 200 kHz DC-DC converters and fast-turn-on safety circuits.
NSV40200UW6T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 6-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 20mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 1A, 2V
- Power - Max:
- 875 mW
- Frequency - Transition:
- 140MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WDFN (2x2)
NSV40200UW6T1G FAQ
1.How can I place an order for NSV40200UW6T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSV40200UW6T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSV40200UW6T1G reliable?
The price and inventory of NSV40200UW6T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV40200UW6T1G is usually 5 days.
3.What payment methods are accepted for NSV40200UW6T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV40200UW6T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSV40200UW6T1G?
NSV40200UW6T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSV40200UW6T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSV40200UW6T1G?
For technical support, including NSV40200UW6T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV40200UW6T1G requirements.
6.How does Aetrix verify that NSV40200UW6T1G is sourced from the original manufacturer or authorized distributors?
All NSV40200UW6T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV40200UW6T1G meets industry standards.
7.What is the process for return or replacement of NSV40200UW6T1G?
All NSV40200UW6T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSV40200UW6T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSV40200UW6T1G part is unused and in its original packaging.
Return procedure for NSV40200UW6T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSV40200UW6T1G Tags
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onsemi
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