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onsemi NSV40300MZ4T1G

Part No.:
NSV40300MZ4T1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixNSV40300MZ4T1G.pdf
Description:
TRANS PNP 40V 3A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,877

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Product details

Overview

NSV40300MZ4T1G from onsemi is a PNP bipolar power transistor in the e2PowerEdge family, rated for 40 V VCEO, 3.0 A continuous collector current, and ultra-low 0.070 V typical VCE(sat) at IC = 0.5 A / IB = 50 mA. It delivers high DC current gain (hFE = 200–350) and is optimized for low-voltage, high-speed switching in portable power management circuits.

For engineers reviewing the NSV40300MZ4T1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, SOT-223 package thermal performance (RJA = 64 °C/W on 1"² pad), and direct drive capability from PMU outputs without external base resistors.

Technical Context

This device operates as a saturated-switching PNP transistor with linear gain characteristics suitable for both digital switching and analog amplification. Its low VCE(sat) minimizes conduction loss in battery-powered DC–DC converters, while its fT = 160 MHz supports fast turn-off in high-frequency PWM control loops.

The NSV40300MZ4T1G features complementary pairing with the NSS40301MZ4 series and is specifically qualified to AEC-Q101 for automotive applications including airbag deployment and instrument cluster power control. Its Pb-free, halogen-free construction meets RoHS requirements and supports reflow soldering up to 260 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO40 V - Maximum safe collector-emitter blocking voltage in open-base configuration
IC (continuous)3.0 A - Continuous load current handling capacity at TC = 25 °C
VCE(sat) (typ)0.070 V @ IC = 0.5 A, IB = 50 mA - Enables <15 mW conduction loss per switch at mid-load
hFE (min)200 @ IC = 0.5 A, VCE = 1.0 V - Supports direct drive from low-current PMU GPIOs
fT160 MHz - Sufficient bandwidth for >1 MHz PWM switching with stable gain
RJA64 °C/W on 1"² FR-4 pad - Enables 2.0 W dissipation at ≤85 °C ambient with standard PCB layout
PackageSOT-223 (Case 318E) - Surface-mount footprint with integrated heat sink tab (Pin 2 & 4 = Collector)

Pinout & Package

SOT-223 package with exposed collector thermal pad (Pins 2 and 4). Standard 4-pin configuration with emitter (Pin 3), base (Pin 1), and dual collector terminals (Pins 2 and 4) for enhanced thermal and current handling.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1BaseControl input; accepts 50–300 mA base drive for full saturation at 3 A load
Pin 2CollectorMain high-current output path; electrically tied to Pin 4 for parallel routing and thermal spreading
Pin 3EmitterCommon reference terminal; connects to system ground or positive rail depending on PNP topology
Pin 4CollectorSecondary collector connection; used for thermal relief and low-inductance layout in high-current paths

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive safety-critical systems including airbag deployment and instrument clusters
Ultra-low VCE(sat)0.070 V typ enables >95% efficiency in 3.3 V/5 V synchronous buck topologies
High hFE linearityhFE = 200–350 across 0.5–3.0 A supports analog gain stability in linear regulators
SOT-223 thermal designDual-collector pins and exposed pad deliver 2.0 W power dissipation with minimal PCB area
Pb-free & RoHS compliantMeets global environmental regulations and supports lead-free reflow assembly at 260 °C peak

Applications

Portable DC–DC ConvertersAutomotive Instrument Clusters

Use Scenario: Step-down conversion in smartphones and digital cameras requiring compact, efficient 3.3 V or 5 V rails from single-cell Li-ion batteries.

IC Role / Device Role / Timing Role: PNP switch in low-side or complementary driver stage of synchronous buck converter.

Use Value: 0.070 V VCE(sat) reduces conduction loss by >40% vs. standard PNP transistors at 1 A load.

Use Scenario: Power sequencing and backlight dimming control in automotive LCD instrument panels operating across –40 °C to +105 °C.

IC Role / Device Role / Timing Role: High-reliability load switch for 12 V supply domains with AEC-Q101 validated lifetime.

Use Value: AEC-Q101 qualification and –55 °C to +150 °C junction range ensure functional safety compliance.

Low-Voltage Motor ControlPMU-Driven Load Switching

Use Scenario: H-bridge half-bridge drivers in disc drive spindle motors and tape transport systems powered from 5 V logic rails.

IC Role / Device Role / Timing Role: Low-saturation PNP switch enabling bidirectional current control with minimal voltage headroom.

Use Value: 40 V VCEO and 5 A ICM support inductive kickback suppression without snubbers.

Use Scenario: Direct switching of 3.0 A loads (e.g., LED banks, sensors, RF modules) from PMU GPIOs in wearables and IoT edge devices.

IC Role / Device Role / Timing Role: Single-transistor interface between low-current control logic and high-current peripherals.

Use Value: hFE ≥ 200 allows full saturation with ≤50 mA base drive-no external base resistor needed.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSS40300MZ4T1GNon-automotive variant; same electrical specs but not AEC-Q101 qualifiedTargeted for consumer electronics and industrial power suppliesSelect when automotive qualification is unnecessary and cost sensitivity is higher
MBT3906DW1T1GLower IC (200 mA), higher VCE(sat) (0.4 V), SOT-363 packageOnly suitable for signal-level or low-power switching, not 3 A loadsUse only for biasing or logic inversion-not as a drop-in replacement for NSV40300MZ4T1G

Compared with NSS40300MZ4T1G, the NSV40300MZ4T1G adds AEC-Q101 validation and site-specific controls for automotive use, while MBT3906DW1T1G serves entirely different current-class applications and cannot replace it in high-power roles.

Availability

NSV40300MZ4T1G is available at Aetrix Electronics and suitable for portable DC–DC converters, automotive instrument clusters, and low-voltage motor control applications requiring stable component supply and long-term lifecycle assurance.

Supply support for NSV40300MZ4T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The NSV40300MZ4T1G belongs to the e2PowerEdge family of low VCE(sat) transistors, engineered specifically for high-efficiency, high-reliability switching in battery-constrained and safety-critical systems.

FAQ

What is the maximum continuous collector current rating for NSV40300MZ4T1G?

The NSV40300MZ4T1G is rated for 3.0 A continuous collector current (IC) at case temperature TC = 25 °C. Derating applies above 25 °C per Figure 1 in the datasheet, with full 3.0 A operation supported up to ~75 °C case temperature on a 1"² FR-4 copper pad. At higher temperatures or smaller pads, the usable current decreases due to thermal limits.

Is NSV40300MZ4T1G pin-compatible with NSS40300MZ4T1G?

Yes, NSV40300MZ4T1G and NSS40300MZ4T1G share identical SOT-223 pinout, electrical specifications, and thermal characteristics. The NSV prefix denotes AEC-Q101 qualification and PPAP-capable manufacturing controls, while the NSS version is intended for non-automotive applications-but both use the same die and package.

What is the typical VCE(sat) of NSV40300MZ4T1G under standard switching conditions?

The NSV40300MZ4T1G achieves 0.070 V typical VCE(sat) at IC = 0.5 A and IB = 50 mA, 0.150 V at IC = 1.0 A and IB = 20 mA, and 0.400 V at IC = 3.0 A and IB = 0.3 A. These values reflect true saturation behavior and are verified across temperature ranges from –40 °C to +150 °C.

Does NSV40300MZ4T1G support direct drive from microcontroller GPIOs?

Yes, NSV40300MZ4T1G supports direct drive from most PMU or MCU GPIOs due to its high hFE (200–350) and low required base current. For example, full saturation at 1.0 A collector current needs only ~5 mA base drive-well within the 20 mA sourcing capability of standard GPIOs, eliminating need for buffer stages.

What is the thermal resistance junction-to-ambient for NSV40300MZ4T1G on standard PCB layout?

The NSV40300MZ4T1G has RJA = 64 °C/W when mounted on a 1"² (645 mm²) copper collector pad on FR-4 board material. This value assumes proper thermal via placement under the exposed collector pad (Pins 2 & 4). With minimal copper (7.6 mm²), RJA rises to 155 °C/W-so layout directly impacts achievable power dissipation.

NSV40300MZ4T1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 300mA, 3A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
175 @ 1A, 1V
Power - Max:
2 W
Frequency - Transition:
160MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223 (TO-261)

NSV40300MZ4T1G FAQ

1.How can I place an order for NSV40300MZ4T1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSV40300MZ4T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSV40300MZ4T1G reliable?

The price and inventory of NSV40300MZ4T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV40300MZ4T1G is usually 5 days.

3.What payment methods are accepted for NSV40300MZ4T1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV40300MZ4T1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSV40300MZ4T1G?

NSV40300MZ4T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSV40300MZ4T1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSV40300MZ4T1G?

For technical support, including NSV40300MZ4T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV40300MZ4T1G requirements.

6.How does Aetrix verify that NSV40300MZ4T1G is sourced from the original manufacturer or authorized distributors?

All NSV40300MZ4T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV40300MZ4T1G meets industry standards.

7.What is the process for return or replacement of NSV40300MZ4T1G?

All NSV40300MZ4T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSV40300MZ4T1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSV40300MZ4T1G part is unused and in its original packaging.

Return procedure for NSV40300MZ4T1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NSV40300MZ4T1G Tags

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