My Inquiry
My Account
onsemi NSV40301MZ4T1G
- Part No.:
- NSV40301MZ4T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
NSV40301MZ4T1G.pdf
- Description:
- TRANS NPN 40V 3A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:73
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSV40301MZ4T1G from onsemi is an AEC-Q101 qualified NPN bipolar power transistor in SOT-223 package, rated for 40 V VCEO, 3.0 A IC, and ultra-low 0.050 V typical VCE(sat) at IC = 0.5 A / IB = 50 mA. It delivers high DC current gain (hFE = 220–500) and 215 MHz fT, enabling efficient switching in automotive airbag deployment and portable DC–DC converters.
For engineers reviewing the NSV40301MZ4T1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, low saturation voltage under high-current drive, thermal resistance of 64 °C/W (junction-to-case), and compatibility with direct PMU output drive due to linear beta characteristics.
Technical Context
This device belongs to onsemi's e2PowerEdge family, engineered specifically for low-voltage, high-speed switching where energy efficiency and thermal performance are critical. Its design emphasizes ultra-low VCE(sat) across operating currents (0.050 V to 0.200 V) and stable hFE over temperature (–55°C to +150°C), supporting robust analog amplification and digital switching roles.
The SOT-223 package features a thermally enhanced 4-pin layout with dual collector terminals (pins 2 and 4), enabling higher current handling and improved heat dissipation. Electrical behavior is characterized by low input capacitance (170 pF) and output capacitance (25 pF), supporting fast turn-on/turn-off transitions in pulse-width modulated power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter voltage before breakdown in open-base configuration. |
| IC (continuous) | 3.0 A - Continuous collector current rating at TC = 25°C, defining steady-state power stage capacity. |
| VCE(sat) (typ.) | 0.050 V @ IC=0.5 A/IB=50 mA - Enables <0.025 W conduction loss per switch, critical for battery-powered efficiency. |
| hFE | 220–500 - High and linear DC current gain supports direct drive from low-power control outputs without buffer stages. |
| fT | 215 MHz - Current-gain bandwidth product confirms suitability for high-frequency switching up to ~10–20 MHz practical operation. |
| RθJC | 64 °C/W - Junction-to-case thermal resistance enables predictable heatsinking when mounted on 1"² copper pad. |
| AEC-Q101 | Qualified - Validated for automotive applications including airbag systems and instrument clusters per stress test requirements. |
Pinout & Package
SOT-223 (TO-261, Case 318E-04) surface-mount package with exposed collector tab for thermal management. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (dual-collector configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input terminal; accepts 50 mA base drive to saturate 0.5 A collector current with minimal VBE(sat). |
| 2 & 4 | Collector | Dual collector terminals reduce current density and thermal resistance; both must be connected to high-side power rail or heatsink. |
| 3 | Emitter | Reference/return path; tied to ground or low-side switch node; carries full load current with low parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 0.050 V typ. at IC/IB = 10 - Reduces conduction losses by >50% vs. standard transistors in 3–5 V rail applications. |
| AEC-Q101 qualification | Validated for automotive safety-critical systems - enables use in airbag deployment circuits without additional qualification effort. |
| High hFE linearity | hFE = 220–500 across IC = 0.001–3.0 A - Supports analog amplifier designs and eliminates need for gain-stabilizing emitter degeneration. |
| Thermally enhanced SOT-223 | RθJC = 64 °C/W - Allows 2.0 W power dissipation with modest heatsinking, suitable for space-constrained motor drivers. |
| Pb-free, RoHS-compliant | Halogen-free/BFR-free construction - Meets global environmental compliance requirements for automotive and industrial end equipment. |
Applications
| Automotive Airbag Deployment | Portable DC–DC Converters |
|---|---|
Use Scenario: High-reliability switching of squib firing circuits during crash events, requiring sub-millisecond response and fail-safe operation. IC Role / Device Role / Timing Role: Primary power switch controlling energy discharge into pyrotechnic initiator; operates in saturated on/off mode. Use Value: AEC-Q101 qualification ensures functional safety compliance; low VCE(sat) minimizes resistive heating during sustained squib pre-charge phases. | Use Scenario: Step-down switching in compact battery-powered devices like smartphones and digital cameras, where efficiency and board area are constrained. IC Role / Device Role / Timing Role: Main power transistor in synchronous or asynchronous buck converter topologies; driven by PWM controller. Use Value: 215 MHz fT and low Cib/Cob support clean switching edges at 500 kHz–1 MHz; high hFE reduces gate driver loading. |
| Disc Drive Motor Control | Instrument Cluster Power Management |
Use Scenario: Low-voltage (<12 V) brushed DC motor actuation in HDD/SSD spindle and actuator mechanisms. IC Role / Device Role / Timing Role: H-bridge half-bridge switch delivering bidirectional current to motor windings; operated in PWM mode. Use Value: Dual collector pins (pins 2 & 4) lower effective RDS(on)-equivalent resistance, reducing I²R losses during continuous 1–2 A motor stall conditions. | Use Scenario: Local 5 V or 3.3 V regulation and load switching for LCD backlight, CAN transceiver bias, and microcontroller peripherals in vehicle dashboards. IC Role / Device Role / Timing Role: High-side or low-side power switch enabling controlled power-up/power-down sequencing. Use Value: Direct drive capability from PMU GPIOs (no external base resistor needed for ≤1 A loads) simplifies BOM and improves startup timing predictability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT4401LT1G | VCEO = 40 V, IC = 0.6 A, VCE(sat) = 0.75 V @ IC/IB = 10 - significantly higher saturation voltage and lower current rating. | Not AEC-Q101 qualified; limited to consumer-grade portable electronics, not automotive safety systems. | Select when cost is primary constraint and peak current ≤0.6 A; avoid for airbag or motor control. |
| NSV40301MZ4T3G | Identical electrical specs and AEC-Q101 qualification; differs only in packaging (4,000 pcs/reel vs. 1,000 pcs/reel). | No functional difference; same use cases and reliability profile. | Choose for high-volume production runs requiring reduced handling frequency and lower unit logistics cost. |
Compared with MMBT4401LT1G, NSV40301MZ4T1G delivers 15× lower conduction loss and automotive qualification; compared with NSV40301MZ4T3G, it offers identical performance in smaller reel quantity for prototyping and low-volume builds.
Availability
NSV40301MZ4T1G is available at Aetrix Electronics and suitable for automotive airbag systems, portable DC–DC converters, and disc drive motor controls requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for NSV40301MZ4T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The e2PowerEdge family-including NSV40301MZ4T1G-is designed specifically for high-efficiency, low-voltage power switching in safety-critical and battery-sensitive systems, emphasizing ultra-low VCE(sat), AEC-Q101 compliance, and thermal robustness.
FAQ
What is the maximum continuous collector current rating for NSV40301MZ4T1G?
The NSV40301MZ4T1G has a maximum continuous collector current (IC) rating of 3.0 A at case temperature TC = 25°C. Derating applies above 25°C per the power derating curve in Figure 1; at TC = 100°C, usable IC drops to approximately 1.5 A. This rating assumes proper PCB copper area (1"² collector pad) and thermal management.
Is NSV40301MZ4T1G suitable for automotive applications?
Yes, NSV40301MZ4T1G is AEC-Q101 qualified and PPAP capable, with NSV prefix denoting automotive-specific manufacturing site and process controls. It is explicitly validated for airbag deployment systems and instrument cluster power management, meeting stringent automotive reliability, temperature, and ESD requirements.
What is the typical VCE(sat) of NSV40301MZ4T1G at 3.0 A collector current?
The typical VCE(sat) of NSV40301MZ4T1G at IC = 3.0 A and IB = 0.3 A is 0.200 V, as specified in the Electrical Characteristics table. This ultra-low saturation voltage enables <0.6 W conduction loss at full rated current, critical for thermal management in enclosed automotive modules.
Does NSV40301MZ4T1G have a dual-collector pin configuration?
Yes, NSV40301MZ4T1G uses SOT-223 Style 1 pinout: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector. The dual collector terminals (pins 2 and 4) are internally connected and intended for parallel connection to reduce current density and improve thermal performance in high-power switching.
What is the current-gain bandwidth product (fT) of NSV40301MZ4T1G?
The current-gain bandwidth product (fT) of NSV40301MZ4T1G is 215 MHz, measured at IC = 500 mA, VCE = 10 V, and ftest = 1.0 MHz. This high fT supports fast switching in DC–DC converters operating up to several megahertz, while maintaining sufficient gain margin for stable closed-loop control.
NSV40301MZ4T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 300mA, 3A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 1A, 1V
- Power - Max:
- 800 mW
- Frequency - Transition:
- 215MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223 (TO-261)
NSV40301MZ4T1G FAQ
1.How can I place an order for NSV40301MZ4T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSV40301MZ4T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSV40301MZ4T1G reliable?
The price and inventory of NSV40301MZ4T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV40301MZ4T1G is usually 5 days.
3.What payment methods are accepted for NSV40301MZ4T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV40301MZ4T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSV40301MZ4T1G?
NSV40301MZ4T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSV40301MZ4T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSV40301MZ4T1G?
For technical support, including NSV40301MZ4T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV40301MZ4T1G requirements.
6.How does Aetrix verify that NSV40301MZ4T1G is sourced from the original manufacturer or authorized distributors?
All NSV40301MZ4T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV40301MZ4T1G meets industry standards.
7.What is the process for return or replacement of NSV40301MZ4T1G?
All NSV40301MZ4T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSV40301MZ4T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSV40301MZ4T1G part is unused and in its original packaging.
Return procedure for NSV40301MZ4T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSV40301MZ4T1G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
