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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSV40301MZ4T3G

Name: NSV40301MZ4T3G
Brand: onsemi
SKU: NSV40301MZ4T3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSV40301MZ4T3G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: NSV40301MZ4T3G.pdf

Description:: TRANS NPN 40V 3A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:4,000

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Product details

Overview

NSV40301MZ4T3G from onsemi is an AEC-Q101 qualified NPN bipolar power transistor in SOT-223 package, rated for 40 V V_CEO, 3.0 A I_C, and ultra-low 0.050 V typical V_CE(sat) at I_C = 0.5 A / I_B = 50 mA. It delivers high DC current gain (h_FE = 220–500) and 215 MHz f_T, targeting low-voltage, high-speed switching in automotive airbag systems and portable DC-DC converters.

For engineers reviewing the NSV40301MZ4T3G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, validated 0.200 V V_CE(sat) at full 3.0 A load, thermal resistance of 64 °C/W (junction-to-case), SOT-223 pin-compatible layout, and suitability for direct drive from PMU control outputs without external base resistors.

Technical Context

This device belongs to onsemi's e2PowerEdge family, engineered specifically for energy-efficient switching where low conduction loss and fast turn-on/turn-off are critical. Its linear gain (Beta) behavior supports analog amplifier use, while the ultra-low saturation voltage enables high-efficiency operation in battery-powered systems operating below 5 V.

The transistor features a thermally enhanced SOT-223 package with dual collector terminals (Pins 2 and 4) for improved heat dissipation and current handling. Its 25 pF C_ob and 170 pF C_ib support stable high-frequency switching up to 215 MHz f_T, and it maintains reliable operation across –55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum safe collector-emitter blocking voltage in open-base configuration; defines upper rail limit in 12 V/24 V automotive and 3.3–5 V portable power rails.
I_C (cont.)	3.0 A - Continuous collector current rating at T_C = 25 °C; supports motor drivers and power switches in disc drives and instrument clusters.
V_CE(sat)	0.050 V (typ.) @ I_C=0.5 A/I_B=50 mA - Enables <15 mW conduction loss at mid-load; critical for thermal management in sealed enclosures.
h_FE	220–500 - High, linear DC current gain allows direct interface with low-current PMU outputs (e.g., 20–50 mA GPIOs) without base resistor redesign.
f_T	215 MHz - Supports switching frequencies >10 MHz in resonant DC-DC topologies and fast PWM-controlled loads.
R_θJC	64 °C/W - Junction-to-case thermal resistance measured on 1″² FR-4 pad; enables predictable thermal design with standard PCB copper pour.

Pinout & Package

SOT-223 (TO-261, Case 318E-04) surface-mount package with exposed collector tab for thermal conduction. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (dual-collector configuration).

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; accepts low-current drive (≤1.0 A) to switch 3.0 A collector current with minimal base drive overhead.
2 & 4	Collector	Dual collector terminals connected internally; used together to reduce current density, lower R_DS(on)-equivalent path resistance, and improve thermal spreading to PCB copper.
3	Emitter	Reference node for biasing; tied to ground or low-side return path; supports Kelvin-sense configurations when decoupled from power ground.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including airbag deployment and instrument cluster power control under harsh thermal and vibration conditions.
Ultra-low V_CE(sat)	0.050 V typical at I_C/I_B = 10 - reduces conduction losses by >60% vs. standard general-purpose transistors at same current.
High h_FE linearity	h_FE = 220–500 across I_C = 0.5–3.0 A - enables consistent gain in analog amplifiers and eliminates need for gain-compensation circuitry.
Pb-free, RoHS compliant	Halogen-free/BFR-free construction meets global environmental compliance requirements for automotive and consumer electronics manufacturing.

Applications

Automotive Airbag Deployment	Portable DC-DC Converters
Use Scenario: High-reliability triggering of squib igniters during crash events, requiring sub-millisecond response and fault-tolerant current delivery. IC Role / Device Role / Timing Role: Low-side switch controlling 1–2 A squib current with precise timing and minimal voltage drop to ensure full energy transfer. Use Value: 0.050 V V_CE(sat) ensures ≥98% energy delivery to squib at 3.3 V supply; AEC-Q101 qualification guarantees operation over –40 °C to +125 °C ambient.	Use Scenario: Synchronous rectification or main switch in buck converters powering CPUs, displays, or sensors in smartphones and digital cameras. IC Role / Device Role / Timing Role: High-gain, low-loss switching element enabling efficient 3.3 V/5 V output regulation from single-cell Li-ion (2.7–4.2 V) input. Use Value: 215 MHz f_T and 25 pF C_ob support >2 MHz switching without excessive gate drive loss; 3.0 A rating covers peak transient loads.
Low-Voltage Motor Control	Instrument Cluster Power Management
Use Scenario: Driving small brushed DC motors in optical disc drives and tape transport mechanisms, where compact size and thermal efficiency are essential. IC Role / Device Role / Timing Role: H-bridge half-bridge switch delivering bidirectional 1–2 A motor current with fast turn-on/turn-off to minimize commutation loss. Use Value: Dual-collector SOT-223 package lowers thermal resistance by 30% vs. standard SOT-23; 0.200 V V_CE(sat) at 3.0 A limits self-heating in confined drive modules.	Use Scenario: Power sequencing and load switching for LCD backlight, microcontroller peripherals, and CAN transceivers in automotive dashboards. IC Role / Device Role / Timing Role: Precision-controlled power switch activated by MCU GPIO or PMU output, managing multiple 5–12 V subsystems. Use Value: Direct drive capability (h_FE ≥220) eliminates base resistor networks; 6.0 V V_EB rating supports reverse-polarity protection circuits.

Automotive Airbag Deployment

Portable DC-DC Converters

Use Scenario: High-reliability triggering of squib igniters during crash events, requiring sub-millisecond response and fault-tolerant current delivery.

IC Role / Device Role / Timing Role: Low-side switch controlling 1–2 A squib current with precise timing and minimal voltage drop to ensure full energy transfer.

Use Value: 0.050 V V_CE(sat) ensures ≥98% energy delivery to squib at 3.3 V supply; AEC-Q101 qualification guarantees operation over –40 °C to +125 °C ambient.

Use Scenario: Synchronous rectification or main switch in buck converters powering CPUs, displays, or sensors in smartphones and digital cameras.

IC Role / Device Role / Timing Role: High-gain, low-loss switching element enabling efficient 3.3 V/5 V output regulation from single-cell Li-ion (2.7–4.2 V) input.

Use Value: 215 MHz f_T and 25 pF C_ob support >2 MHz switching without excessive gate drive loss; 3.0 A rating covers peak transient loads.

Low-Voltage Motor Control

Instrument Cluster Power Management

Use Scenario: Driving small brushed DC motors in optical disc drives and tape transport mechanisms, where compact size and thermal efficiency are essential.

IC Role / Device Role / Timing Role: H-bridge half-bridge switch delivering bidirectional 1–2 A motor current with fast turn-on/turn-off to minimize commutation loss.

Use Value: Dual-collector SOT-223 package lowers thermal resistance by 30% vs. standard SOT-23; 0.200 V V_CE(sat) at 3.0 A limits self-heating in confined drive modules.

Use Scenario: Power sequencing and load switching for LCD backlight, microcontroller peripherals, and CAN transceivers in automotive dashboards.

IC Role / Device Role / Timing Role: Precision-controlled power switch activated by MCU GPIO or PMU output, managing multiple 5–12 V subsystems.

Use Value: Direct drive capability (h_FE ≥220) eliminates base resistor networks; 6.0 V V_EB rating supports reverse-polarity protection circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSV40300MZ4T3G	Complementary PNP device in same SOT-223 package; V_CEO = 40 V, I_C = 3.0 A, but V_CE(sat) = 0.075 V (typ.) and h_FE = 150–400.	Used in complementary emitter-follower or push-pull stages; not suitable for high-side switching due to lower V_EB (5.0 V).	Select when building matched NPN/PNP pairs for Class AB audio or symmetrical power control; verify base drive polarity compatibility.
ZXTN2012ZTA	Diodes Incorporated NPN in SOT-223; V_CEO = 40 V, I_C = 3.0 A, V_CE(sat) = 0.120 V (typ.), h_FE = 200–450, no AEC-Q101 qualification.	Lacks automotive qualification and PPAP capability; suitable for industrial/commercial DC-DC but not safety-critical airbag systems.	Choose for cost-sensitive non-automotive designs where AEC-Q101 is not required; confirm thermal derating per R_θJA = 155 °C/W (small pad).

Compared with NSV40301MZ4T3G, NSV40300MZ4T3G offers complementary polarity but higher V_CE(sat) and lower gain linearity, while ZXTN2012ZTA provides similar electrical specs without automotive validation-making NSV40301MZ4T3G the only option qualified for airbag deployment and instrument cluster use.

Availability

NSV40301MZ4T3G is available at Aetrix Electronics and suitable for automotive airbag systems, portable DC-DC converters, and low-voltage motor controls requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 traceability.

Supply support for NSV40301MZ4T3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The e2PowerEdge family-including NSV40301MZ4T3G-is designed specifically for high-efficiency, low-voltage switching in space-constrained and thermally demanding environments such as automotive safety systems and portable electronics.

FAQ

What is the maximum continuous collector current rating for NSV40301MZ4T3G?

The NSV40301MZ4T3G is rated for 3.0 A continuous collector current (I_C) at case temperature T_C = 25 °C, with derating above that temperature per the power derating curve in Figure 1. At T_C = 100 °C, the usable I_C drops to approximately 1.8 A to maintain safe junction temperature. This rating assumes proper PCB copper pad layout per the datasheet's thermal guidelines.

Is NSV40301MZ4T3G qualified for automotive applications?

Yes, NSV40301MZ4T3G is AEC-Q101 qualified and PPAP capable, with the "NSV" prefix explicitly indicating compliance for automotive and other applications requiring unique site and control change requirements. It is validated for use in airbag deployment circuits and instrument clusters, operating reliably from –55 °C to +150 °C junction temperature.

What does the "T3G" suffix indicate in NSV40301MZ4T3G?

The "T3G" suffix denotes tape-and-reel packaging: 4,000 units per reel, Pb-free (RoHS-compliant), and compatible with automated SMT placement equipment. The "G" confirms halogen-free/BFR-free construction, and the marking "40301" on the device body identifies the specific variant within the NSS40301MZ4 family.

Can NSV40301MZ4T3G be driven directly from a microcontroller GPIO?

Yes, NSV40301MZ4T3G can be driven directly from most MCU GPIOs due to its high DC current gain (h_FE ≥220 at I_C = 0.5 A). With typical 20–30 mA GPIO output capability, it supports I_C up to ~2.5 A without external base resistors-ideal for space-constrained designs like portable power management where minimizing passive count is critical.

What is the thermal resistance from junction to case (R_θJC) for NSV40301MZ4T3G?

The NSV40301MZ4T3G has a junction-to-case thermal resistance (R_θJC) of 64 °C/W when mounted on a 1″² (645 mm²) copper collector pad on FR-4 board material. This value enables accurate thermal modeling for PCB layout-especially important in automotive modules where ambient temperatures exceed 105 °C and forced airflow is absent.

NSV40301MZ4T3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 200mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 220 @ 500mA, 1V

Power - Max:: 2 W

Frequency - Transition:: 215MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223 (TO-261)

NSV40301MZ4T3G FAQ

1.How can I place an order for NSV40301MZ4T3G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSV40301MZ4T3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSV40301MZ4T3G reliable?

The price and inventory of NSV40301MZ4T3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV40301MZ4T3G is usually 5 days.

3.What payment methods are accepted for NSV40301MZ4T3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV40301MZ4T3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSV40301MZ4T3G?

NSV40301MZ4T3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSV40301MZ4T3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSV40301MZ4T3G?

For technical support, including NSV40301MZ4T3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV40301MZ4T3G requirements.

6.How does Aetrix verify that NSV40301MZ4T3G is sourced from the original manufacturer or authorized distributors?

All NSV40301MZ4T3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV40301MZ4T3G meets industry standards.

7.What is the process for return or replacement of NSV40301MZ4T3G?

All NSV40301MZ4T3G units undergo pre-shipment inspection (PSI). If there is an issue with NSV40301MZ4T3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSV40301MZ4T3G part is unused and in its original packaging.

Return procedure for NSV40301MZ4T3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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