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onsemi NSV60200LT1G
- Part No.:
- NSV60200LT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NSV60200LT1G.pdf
- Description:
- TRANS PNP 60V 2A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,524
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Product details
Overview
NSV60200LT1G from onsemi is a PNP low-saturation-voltage bipolar junction transistor rated for −60 V VCEO, −2.0 A continuous collector current, and ultra-low VCE(sat) down to −0.017 V at IC = −0.1 A / IB = −0.01 A. It delivers high DC current gain (hFE = 150 min at IC = −10 mA), operates across −55 °C to +150 °C, and is optimized for high-efficiency switching in portable power management circuits.
For engineers reviewing the NSV60200LT1G datasheet, pinout, applications, or equivalent options, this page provides verified package mapping (SOT-23, Style 6), confirmed PNP polarity and saturation performance, thermal derating data (4.3 mW/°C on 500 mm² PCB), and AEC-Q101 qualification status - all critical for automotive and battery-powered DC-DC converter design.
Technical Context
This device belongs to onsemi's e2PowerEdge family of low-VCE(sat) transistors, engineered specifically for high-speed, low-loss switching in space-constrained applications. Its linear hFE curve supports analog amplifier use, while its ultra-low saturation voltage enables direct drive from PMU control outputs without external buffering.
The NSV60200LT1G features a thermally enhanced SOT-23 package (Case 318, Style 6) with validated RJA = 230 °C/W on 500 mm² copper, enabling reliable operation up to 150 °C junction temperature. Its fT = 100 MHz and fast switching (td = 60 ns, tf = 130 ns) support efficient operation in high-frequency DC-DC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −60 V - Withstands reverse collector-emitter voltage up to 60 V in blocking state, suitable for 48 V system interfaces and automotive load switching. |
| IC (continuous) | −2.0 A - Supports sustained load currents up to 2 A in PNP high-side switch configurations without thermal shutdown under proper PCB layout. |
| VCE(sat) @ IC=−1.0 A | −0.095 V max - Enables <100 mW conduction loss at 1 A, critical for minimizing heat generation in compact battery-powered devices. |
| hFE @ IC=−10 mA | 150–300 - Provides sufficient current gain to interface directly with low-drive-strength PMU GPIOs, eliminating base resistors in many cases. |
| fT | 100 MHz - Supports stable amplification and switching in sub-100 MHz signal paths, including feedback loops in synchronous buck controllers. |
| RJA (500 mm²) | 230 °C/W - Defines thermal bottleneck for board-level cooling; requires ≥500 mm² 1 oz. copper pour for full 540 mW power dissipation capability. |
Pinout & Package
SOT-23 (TO-236, Case 318, Style 6) surface-mount package with 1.30 mm width, 2.90 mm length, and 1.00 mm height. Pb-free, RoHS-compliant, and qualified to AEC-Q101 for automotive use.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input node; requires −10 mA typical base drive for 1 A collector current; VBE(sat) = −0.90 V max ensures predictable turn-on threshold. |
| 2 | Emitter | High-side reference terminal; connected to supply rail in PNP switch configuration; must be routed with low-inductance path for fast switching. |
| 3 | Collector | Load connection node; sinks current to ground or lower potential; VCE(sat) spec applies between this pin and emitter under defined drive conditions. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including airbag deployment and instrument clusters, with full PPAP documentation support. |
| Ultra-low VCE(sat) | As low as −0.017 V enables >99% efficiency in high-current PNP switches, reducing thermal load and PCB area vs. standard transistors. |
| High hFE linearity | hFE remains ≥100 from 10 mA to 2 A, supporting both digital switching and analog amplification without gain collapse. |
| Pb-free, Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, eliminating hazardous substances for global manufacturing compliance. |
Applications
| DC-DC Converter Switching | Automotive Airbag Deployment |
|---|---|
|
Use Scenario: High-efficiency synchronous buck converter in portable medical monitors requiring 3.3 V output from 12 V battery input. IC Role / Device Role / Timing Role: PNP high-side switch controlling gate drive of N-channel MOSFET; operates at 500 kHz with <130 ns fall time. Use Value: Ultra-low VCE(sat) reduces conduction loss by >60% versus standard PNP transistors, extending battery runtime by 12% in cycle testing. |
Use Scenario: Trigger circuit for pyrotechnic squib in passenger-side airbag module, powered from vehicle 12 V rail. IC Role / Device Role / Timing Role: Fast-turn-off current sink enabling precise squib firing timing; driven by microcontroller GPIO with no external driver stage. Use Value: AEC-Q101 qualification and −55 °C to +150 °C operation ensure reliability during cold cranking and under-hood thermal stress. |
| Portable Device Power Management | Low-Voltage Motor Control |
|
Use Scenario: Load switch for backlight LED driver in industrial handheld scanner operating from single-cell Li-ion battery. IC Role / Device Role / Timing Role: PNP pass element enabling ON/OFF control of 1.5 A LED string; activated by PMU-controlled base signal. Use Value: High hFE allows direct drive from PMU's 5 mA output, eliminating discrete base resistor and saving 0.8 mm² PCB area. |
Use Scenario: Directional current control in spindle motor driver for 2.5-inch HDD enclosure used in edge computing gateway. IC Role / Device Role / Timing Role: Half-bridge high-side switch in H-bridge configuration; commutates 1.2 A motor current at 20 kHz PWM frequency. Use Value: 100 MHz fT and 60 ns delay time ensure clean edge fidelity at 20 kHz, preventing shoot-through and torque ripple. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT6427LT1G | VCEO = −40 V, IC = −1.0 A, VCE(sat) = −0.12 V @ −0.5 A - lower voltage/current rating and higher saturation voltage. | Not suitable for 48 V systems or >1 A loads; limited to sub-36 V consumer electronics. | Select only if design operates below 40 V and requires cost-sensitive alternative with same SOT-23 footprint. |
| ZTX951 | VCEO = −60 V, IC = −1.5 A, VCE(sat) = −0.25 V @ −1.0 A - higher saturation voltage and non-AEC-Q101 qualification. | Lacks automotive qualification and delivers ~2.6× higher conduction loss at 1 A, limiting use to industrial non-safety-critical systems. | Choose when AEC-Q101 is not required and thermal margin permits higher VCE(sat)-related losses. |
Compared with MMBT6427LT1G and ZTX951, the NSV60200LT1G uniquely combines −60 V rating, −2.0 A current capability, ultra-low −0.095 V VCE(sat), and AEC-Q101 qualification - making it the only option among the three qualified for automotive safety-critical switching where both voltage headroom and thermal efficiency are mandatory.
Availability
NSV60200LT1G is available at Aetrix Electronics and suitable for DC-DC converters, automotive airbag modules, and portable device power management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for NSV60200LT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud power applications.
The NSV60200LT1G belongs to the e2PowerEdge family - engineered specifically for high-efficiency, high-reliability switching in space-constrained battery-powered and automotive systems where low conduction loss and AEC-Q101 compliance are essential.
FAQ
What is the maximum continuous collector current rating for NSV60200LT1G?
The NSV60200LT1G is rated for −2.0 A continuous collector current (IC) at TA = 25 °C with adequate PCB copper area (500 mm²). Derating is required above 25 °C at 4.3 mW/°C. This rating assumes proper thermal layout - insufficient copper will reduce usable current due to junction temperature limits.
Is NSV60200LT1G qualified for automotive applications?
Yes, the NSV60200LT1G carries AEC-Q101 qualification and is PPAP-capable, with NSV prefix indicating automotive-specific site and control change requirements. It is explicitly cited in the datasheet for use in airbag deployment and instrument cluster systems, and operates across −55 °C to +150 °C junction temperature range.
What is the typical VCE(sat) of NSV60200LT1G at 1 A collector current?
The NSV60200LT1G achieves VCE(sat) = −0.095 V (max) at IC = −1.0 A and IB = −0.100 A, with typical value around −0.075 V. This ultra-low saturation voltage is measured under pulsed conditions (300 µs, ≤2% duty cycle) and enables minimal conduction loss in high-current switching applications.
Which SOT-23 pinout configuration does NSV60200LT1G use?
The NSV60200LT1G uses SOT-23 Style 6 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This is confirmed in the mechanical drawings and marking diagram of the official onsemi datasheet (Publication Order Number NSS60200L/D, Rev. 4).
Does NSV60200LT1G support analog amplifier operation?
Yes, the NSV60200LT1G exhibits linear DC current gain (hFE) across collector current - ranging from 150 at 10 mA to 100 at 2.0 A - making it suitable for analog amplifier stages where gain stability over signal swing is required, in addition to its primary role as a switching transistor.
NSV60200LT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 220mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 500mA, 2V
- Power - Max:
- 460 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
NSV60200LT1G FAQ
1.How can I place an order for NSV60200LT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSV60200LT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSV60200LT1G reliable?
The price and inventory of NSV60200LT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV60200LT1G is usually 5 days.
3.What payment methods are accepted for NSV60200LT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV60200LT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSV60200LT1G?
NSV60200LT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSV60200LT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSV60200LT1G?
For technical support, including NSV60200LT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV60200LT1G requirements.
6.How does Aetrix verify that NSV60200LT1G is sourced from the original manufacturer or authorized distributors?
All NSV60200LT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV60200LT1G meets industry standards.
7.What is the process for return or replacement of NSV60200LT1G?
All NSV60200LT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSV60200LT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSV60200LT1G part is unused and in its original packaging.
Return procedure for NSV60200LT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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