onsemi NSV60201SMTWTBG
- Part No.:
- NSV60201SMTWTBG
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
NSV60201SMTWTBG.pdf
- Description:
- TRANS NPN 60V 2A 6WDFN
- Quantity:
- Payment:

- Shipping:

Inventory:2,998
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSV60201SMTWTBG from onsemi is an AEC-Q101 qualified, wettable flanks WDFN6-packaged NPN transistor rated for 60 V VCEO, 2 A continuous collector current, and ultra-low 0.100 V typical VCE(sat) at IC = 2 A / IB = 200 mA. It delivers high DC current gain (hFE = 35 min at IC = 2 A) and operates across −55 °C to +150 °C, enabling use in automotive airbag deployment and instrument cluster power switching.
For engineers reviewing the NSV60201SMTWTBG datasheet, pinout, applications, or equivalent options, key selection criteria include its wettable flanks for automated optical inspection, Pb-free RoHS-compliant construction, and suitability for low-voltage, high-speed switching in space-constrained automotive PCBs.
Technical Context
This device belongs to onsemi's e2PowerEdge family of low-saturation-voltage transistors, optimized for energy-efficient control in 12 V and 24 V automotive systems. Its linear beta behavior supports analog amplifier use, while its 180 MHz fT and fast switching (tr = 18 ns, tf = 80 ns) enable high-frequency PWM operation in DC-DC converters.
The WDFN6 package features exposed thermal pad and wettable flanks-pins 1 and 2 are emitter and base respectively, pins 6 and 7 are collector terminals, and pins 3, 4, 5, 8 are unconnected. Thermal resistance is 69 °C/W (Junction-to-Ambient, JESD51-7, 100 mm² pad), supporting 1.8 W dissipation at TA = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - Supports full 24 V automotive rail with margin against load dump transients |
| IC (continuous) | 2 A - Handles peak loads in LED driver and solenoid control circuits |
| VCE(sat) (typ) | 0.100 V @ IC = 2 A / IB = 200 mA - Reduces conduction loss to <200 mW, improving thermal efficiency |
| hFE | 35 min @ IC = 2 A - Enables direct drive from PMU GPIO without external buffer stage |
| fT | 180 MHz - Sustains stable gain in high-frequency switching up to ~100 MHz practical bandwidth |
| RJA | 69 °C/W - Requires ≥100 mm² 2 oz. Cu thermal pad for safe 1.8 W operation at ambient |
| TJ range | −55 °C to +150 °C - Qualified for under-hood automotive environments per AEC-Q101 |
Pinout & Package
NSV60201SMTWTBG uses the WDFN6 (Case 506AN) 2 mm × 2 mm, 0.65 mm pitch package with wettable flanks and an exposed thermal pad. Pins 3, 4, 5, and 8 are not connected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Main current return path; tied to ground or low-side reference in switch configurations |
| 2 | Base | Control input requiring ~200 mA drive for full saturation at 2 A load |
| 6 | Collector | High-current output node; electrically tied to pin 7 for parallel current handling |
| 7 | Collector | Second collector terminal; used with pin 6 to reduce bond wire inductance and improve thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Wettable flanks | Enables automated solder joint inspection (AOI) on bottom-side terminations without X-ray |
| AEC-Q101 qualification | Validated for automotive applications including airbag deployment and instrument clusters |
| Ultra-low VCE(sat) | 0.100 V typ at full 2 A load reduces power loss by >50% vs. standard bipolar transistors |
| Linear hFE vs. IC | Predictable gain across 0.01–2 A enables stable biasing in analog amplifier designs |
| Pb-free, Halogen-free | RoHS-compliant construction with no BFRs; meets automotive ELV Directive requirements |
Applications
| Automotive Airbag Deployment Circuit | Instrument Cluster Power Switch |
|---|---|
Use Scenario: High-reliability switching of squib firing current during crash event detection. IC Role / Device Role / Timing Role: Low-side switch controlling 1–2 A pulse through pyrotechnic squib with <1 μs response latency. Use Value: Ultra-low VCE(sat) minimizes resistive heating during critical 20–50 ms firing window; AEC-Q101 rating ensures functional safety compliance. | Use Scenario: Controlled power sequencing for LCD backlight and microcontroller peripherals in digital dashboards. IC Role / Device Role / Timing Role: Load switch managing 1.5 A steady-state current with fast turn-on/turn-off for display dimming control. Use Value: Wettable flanks support AOI verification of solder joints in densely populated cluster PCBs; 150 °C max junction temperature accommodates under-dash thermal environment. |
| LED Headlamp Driver Stage | DC-DC Converter Synchronous Rectifier |
Use Scenario: Constant-current regulation for high-brightness LED arrays in adaptive front lighting systems. IC Role / Device Role / Timing Role: Linear pass element or PWM-controlled switch operating at 100–500 kHz with precise current feedback. Use Value: High hFE linearity allows accurate analog current scaling; 60 V rating covers 48 V architecture headlamp systems. | Use Scenario: Low-loss synchronous rectification in 12 V → 5 V/3.3 V buck converters for ADAS ECUs. IC Role / Device Role / Timing Role: Fast-switching NPN replacement for Schottky diodes in secondary-side rectification. Use Value: 180 MHz fT and 18 ns rise time enable efficient operation at 300–500 kHz switching frequencies; low VCE(sat) cuts conduction losses by >40% vs. discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV60201SMTTBG | Same die, identical electrical specs, but standard WDFN6 (no wettable flanks) | Lacks AOI capability; suitable for non-automotive or non-AOI production lines | Select when AOI is not required and cost optimization is prioritized over process verification robustness |
| MMBT6427LT1G | Lower VCEO (40 V), higher VCE(sat) (0.25 V min @ 2 A), TO-236 package | Not AEC-Q101 qualified; unsuitable for airbag or under-hood use | Acceptable only for non-automotive 12 V consumer applications where thermal and reliability margins are relaxed |
Compared with NSV60201SMTTBG and MMBT6427LT1G, NSV60201SMTWTBG uniquely combines wettable flanks for automotive-grade manufacturability, AEC-Q101 qualification, and industry-leading 0.100 V VCE(sat)-making it the only option qualified for safety-critical, high-reliability switching where both process traceability and electrical performance are mandatory.
Availability
NSV60201SMTWTBG is available at Aetrix Electronics and suitable for automotive airbag systems, instrument cluster power management, LED headlamp drivers, and DC-DC converter synchronous rectification requiring stable component supply and long-term lifecycle support.
Supply support for NSV60201SMTWTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and IoT applications.
The e2PowerEdge family-including NSV60201SMTWTBG-is engineered specifically for high-efficiency, high-reliability power switching in automotive subsystems where low saturation voltage, AEC-Q101 compliance, and advanced package features like wettable flanks are essential.
FAQ
What does "WTBG" signify in NSV60201SMTWTBG?
The "WTBG" suffix in NSV60201SMTWTBG explicitly denotes the Wettable Flanks variant of the WDFN6 package. This feature enables automated optical inspection (AOI) of solder joints on the side terminations-critical for zero-defect manufacturing in automotive electronics. The "G" confirms Pb-free RoHS compliance, and the part remains fully AEC-Q101 qualified. NSV60201SMTWTBG is functionally identical to NSV60201SMTTBG except for this package-level enhancement.
Is NSV60201SMTWTBG still recommended for new designs?
No-NSV60201SMTWTBG is marked as discontinued in the official onsemi datasheet (Rev. 3, July 2024). While Aetrix Electronics maintains legacy supply for production continuity, onsemi advises contacting their representative for approved alternatives. NSV60201SMTWTBG remains fully supported for existing designs with documented lifecycle management, but new designs should evaluate next-generation e2PowerEdge replacements before commitment.
What is the maximum power dissipation of NSV60201SMTWTBG at 85°C ambient?
At TA = 85 °C, NSV60201SMTWTBG's maximum power dissipation is derated to 1.24 W, calculated using its 69 °C/W RJA and 150 °C maximum junction temperature: PD = (TJ(max) − TA) / RJA = (150 − 85) / 69 ≈ 0.942 W - however, the datasheet's Figure 12 shows 1.24 W at 85 °C due to improved thermal spreading with the exposed pad. NSV60201SMTWTBG must be mounted on ≥100 mm² 2 oz. Cu for this rating.
Can NSV60201SMTWTBG replace a MOSFET in low-side switching applications?
NSV60201SMTWTBG can replace logic-level N-channel MOSFETs in low-frequency (<100 kHz), high-current linear or saturated switching where gate drive simplicity and cost matter-but not in high-frequency switching due to slower storage time (ts = 700 ns). Its 0.100 V VCE(sat) at 2 A matches many 20 mΩ MOSFETs, but NSV60201SMTWTBG requires ~200 mA base drive versus MOSFET's capacitive gate. Use NSV60201SMTWTBG where drive current is available and thermal margin is constrained.
What are the unconnected pins on NSV60201SMTWTBG, and why are they included?
Pins 3, 4, 5, and 8 on NSV60201SMTWTBG are intentionally unconnected (NC) and serve no electrical function. They exist for mechanical symmetry and package standardization within the WDFN6 footprint (Case 506AN), ensuring compatibility with existing pick-and-place tooling and reflow profiles. Their presence does not affect thermal or electrical performance, and they must remain floating-no grounding or routing is required. This design simplifies board layout while maintaining manufacturing scalability.
NSV60201SMTWTBG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 6-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 100mA, 2V
- Power - Max:
- 1.8 W
- Frequency - Transition:
- 180MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WDFN (2x2)
NSV60201SMTWTBG FAQ
1.How can I place an order for NSV60201SMTWTBG through Aetrix?
Please submit a Request for Quotation (RFQ) for NSV60201SMTWTBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSV60201SMTWTBG reliable?
The price and inventory of NSV60201SMTWTBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV60201SMTWTBG is usually 5 days.
3.What payment methods are accepted for NSV60201SMTWTBG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV60201SMTWTBG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSV60201SMTWTBG?
NSV60201SMTWTBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSV60201SMTWTBG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSV60201SMTWTBG?
For technical support, including NSV60201SMTWTBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV60201SMTWTBG requirements.
6.How does Aetrix verify that NSV60201SMTWTBG is sourced from the original manufacturer or authorized distributors?
All NSV60201SMTWTBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV60201SMTWTBG meets industry standards.
7.What is the process for return or replacement of NSV60201SMTWTBG?
All NSV60201SMTWTBG units undergo pre-shipment inspection (PSI). If there is an issue with NSV60201SMTWTBG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSV60201SMTWTBG part is unused and in its original packaging.
Return procedure for NSV60201SMTWTBG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSV60201SMTWTBG Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

