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onsemi NSV60600MZ4T3G
- Part No.:
- NSV60600MZ4T3G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
NSV60600MZ4T3G.pdf
- Description:
- TRANS PNP 60V 6A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:6,003
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Product details
Overview
NSV60600MZ4T3G from onsemi is a PNP bipolar junction transistor designed for high-efficiency, low-voltage switching in power management circuits. It delivers −6.0 A continuous collector current, −60 V collector-emitter breakdown voltage, and ultra-low saturation voltage of −0.050 V at IC = −0.1 A/IB = −2.0 mA - enabling minimal conduction loss in DC-DC converters and automotive airbag deployment circuits.
For engineers reviewing the NSV60600MZ4T3G datasheet, pinout, applications, or equivalent options, key selection criteria include verified AEC-Q101 qualification, SOT-223 thermal performance (RJA = 64 °C/W with 645 mm² copper), and confirmed PNP low-VCE(sat) behavior across −40 °C to +150 °C junction temperature range.
Technical Context
This device belongs to onsemi's e2PowerEdge family and is optimized for direct drive from PMU control outputs due to high DC current gain (hFE = 150 min at IC = −500 mA/VCE = −2.0 V) and linear beta characteristics suitable for analog amplification. Its switching performance includes 100 ns delay and 145 ns fall time under standardized test conditions (VCC = −30 V, IC = 750 mA).
The transistor features complementary pairing with NSS60601MZ4 and supports robust operation in automotive instrument clusters via AEC-Q101 qualification, Pb-free packaging, and guaranteed storage temperature down to −55 °C. Thermal design leverages the SOT-223 package's dual-collector configuration for enhanced power dissipation (2.0 W at TA = 25 °C with 645 mm² copper).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −60 V - Maximum safe collector-emitter voltage before breakdown; defines upper limit for DC-DC converter output stage voltage rating. |
| IC (continuous) | −6.0 A - Continuous current-handling capability; enables use in high-current load switches without forced cooling. |
| VCE(sat) | −0.050 V @ IC = −0.1 A/IB = −2.0 mA - Ultra-low saturation voltage reduces conduction losses below 5 mW at light loads. |
| hFE | 150 min @ IC = −500 mA/VCE = −2.0 V - High DC current gain allows direct interface with low-drive-strength PMU outputs. |
| fT | 100 MHz - Cutoff frequency supports stable operation up to mid-frequency switching applications (e.g., <1 MHz PWM). |
| RJA | 64 °C/W @ 645 mm² copper - Thermal resistance enables 2.0 W power dissipation at ambient without heatsink in industrial PCB layouts. |
| TJ range | −55 °C to +150 °C - Extended junction temperature range validated for under-hood automotive environments. |
Pinout & Package
SOT-223 (TO-261) package, Case 318E-04, Style 1: 4-pin surface-mount outline with exposed collector tab for thermal and electrical connection. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (dual-collector configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to bias transistor into saturation or cutoff; requires ≤−0.6 A drive for full 6 A switching. |
| 2 (Collector) | Main current sink path | Primary high-current output node; electrically and thermally connected to exposed tab for heat transfer and low-inductance layout. |
| 3 (Emitter) | Reference return path | Common emitter node tied to system ground or negative rail; establishes reference for VBE and VCE measurements. |
| 4 (Collector) | Secondary current sink path | Duplicate collector terminal for improved current sharing and reduced thermal resistance; must be connected to same net as Pin 2. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including airbag deployment and instrument clusters per stress-test requirements. |
| Ultra-low VCE(sat) | −0.050 V at light load enables >99% efficiency in battery-powered DC-DC stages where conduction loss dominates. |
| High hFE linearity | hFE remains ≥70 at IC = −6.0 A, supporting predictable analog amplifier gain without external compensation. |
| SOT-223 dual-collector | Two collector pins reduce effective thermal resistance by 30% vs. single-collector SOT-223 variants, improving reliability at 2.0 W dissipation. |
| Pb-free, RoHS compliant | Meets global environmental regulations and supports lead-free reflow profiles (J-STD-020, peak 260 °C). |
Applications
| Battery-Powered DC-DC Converters | Automotive Airbag Deployment Circuits |
|---|---|
|
Use Scenario: Step-down conversion in portable medical devices requiring >95% efficiency at 3–5 A load currents and 3.3–12 V input ranges. IC Role / Device Role / Timing Role: Main PNP switch in synchronous or pseudo-synchronous buck topology, operating at 500 kHz–1 MHz. Use Value: −0.050 V VCE(sat) minimizes I²R loss at 5 A, reducing thermal rise by ~12 °C vs. standard PNP transistors with 0.25 V saturation. |
Use Scenario: High-reliability squib driver in passenger-side airbag modules where rapid, deterministic turn-on is critical during crash events. IC Role / Device Role / Timing Role: Final-stage current switch delivering controlled 2–4 A pulse to pyrotechnic initiator within <10 μs response window. Use Value: AEC-Q101 qualification ensures survivability under mechanical shock, temperature cycling, and humidity exposure per ISO 16750. |
| Low-Voltage Motor Control (Disc Drives) | Instrument Cluster Power Management |
|
Use Scenario: Bidirectional spindle motor control in 2.5-inch HDDs using H-bridge configurations powered from 5 V rails. IC Role / Device Role / Timing Role: Low-side PNP switch in half-bridge leg, handling peak currents up to −12 A during startup surge. Use Value: −12.0 A ICM rating and 540 ns storage time enable clean commutation without shoot-through risk in compact layouts. |
Use Scenario: Voltage regulation and load switching for LCD backlight, CAN transceiver, and microcontroller power domains in digital dashboards. IC Role / Device Role / Timing Role: Programmable load switch controlled by MCU GPIO, managing sequencing and fault isolation. Use Value: −6.0 V VEBO and −100 V VCBO ratings provide margin against load-dump transients (ISO 7637-2 Pulse 5a) up to 120 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MBT3906DW1T1G | Lower IC (−200 mA), higher VCE(sat) (−0.4 V @ −10 mA), SOT-363 package | Only suitable for signal-level switching or biasing; not rated for >500 mA continuous loads. | Select only for low-power logic interfacing where thermal constraints preclude SOT-223 mounting. |
| PN2907A | TO-92 package, lower IC (−600 mA), no AEC-Q101 qualification, RJA = 200 °C/W | Limited to non-automotive, low-volume consumer applications; unsuitable for under-hood thermal environments. | Choose only for prototyping or cost-sensitive non-automotive designs where 2.0 W dissipation is unnecessary. |
Compared with MBT3906DW1T1G and PN2907A, NSV60600MZ4T3G provides 10× higher current capability, 8× lower thermal resistance, and automotive-grade reliability - making it the sole option among the three qualified for production airbag and instrument cluster systems.
Availability
NSV60600MZ4T3G is available at Aetrix Electronics and suitable for battery-powered DC-DC converters, automotive airbag deployment circuits, and low-voltage motor controls requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for NSV60600MZ4T3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.
The NSV60600MZ4T3G belongs to the e2PowerEdge family of low-VCE(sat) transistors engineered specifically for high-efficiency, high-reliability switching in automotive safety systems and portable power management.
FAQ
What is the maximum continuous collector current rating for NSV60600MZ4T3G?
The NSV60600MZ4T3G has a maximum continuous collector current (IC) rating of −6.0 A at TA = 25 °C with sufficient PCB copper area (645 mm²). This rating is derated linearly above 25 °C at 15.6 mW/°C, maintaining safe operation up to +150 °C junction temperature. The NSV60600MZ4T3G achieves this while sustaining ultra-low saturation voltage, distinguishing it from general-purpose PNP transistors.
Is NSV60600MZ4T3G qualified for automotive applications?
Yes, NSV60600MZ4T3G is AEC-Q101 qualified and PPAP capable, with NSV prefix indicating compliance for automotive and other applications requiring unique site and control change requirements. It is explicitly validated for airbag deployment and instrument cluster use, including thermal cycling, humidity testing, and mechanical shock per ISO 16750 standards. The NSV60600MZ4T3G meets these requirements without derating in its specified −55 °C to +150 °C operating range.
What package type does NSV60600MZ4T3G use, and how is it thermally optimized?
NSV60600MZ4T3G uses the SOT-223 (TO-261) package, Case 318E-04, Style 1, featuring dual collector terminals (Pins 2 and 4) bonded to an exposed copper tab. This configuration achieves RJA = 64 °C/W with 645 mm² of 1 oz. copper, enabling 2.0 W dissipation at TA = 25 °C. The NSV60600MZ4T3G's thermal design eliminates need for external heatsinks in most automotive and industrial PCB layouts.
How does NSV60600MZ4T3G compare to NSS60600MZ4T3G?
NSV60600MZ4T3G and NSS60600MZ4T3G share identical electrical specifications, pinout, and package, but differ in manufacturing site and control documentation. The NSV prefix denotes automotive-grade traceability, AEC-Q101 qualification, and PPAP readiness, whereas NSS is intended for industrial/commercial applications. Both versions perform identically in-circuit, but NSV60600MZ4T3G is required for automotive production releases.
What is the typical VCE(sat) of NSV60600MZ4T3G at full load?
At full-rated continuous current (IC = −6.0 A, IB = −0.6 A), the NSV60600MZ4T3G exhibits a typical VCE(sat) of −0.350 V, with a maximum of −0.350 V guaranteed. This value is measured under pulsed conditions (300 ms, ≤2% duty cycle) and reflects real-world performance in high-current switching applications such as motor drives and power supplies. The NSV60600MZ4T3G maintains this low saturation voltage across its full operating temperature range.
NSV60600MZ4T3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 6 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 350mV @ 600mA, 6A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 1A, 2V
- Power - Max:
- 800 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223 (TO-261)
NSV60600MZ4T3G FAQ
1.How can I place an order for NSV60600MZ4T3G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSV60600MZ4T3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSV60600MZ4T3G reliable?
The price and inventory of NSV60600MZ4T3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV60600MZ4T3G is usually 5 days.
3.What payment methods are accepted for NSV60600MZ4T3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV60600MZ4T3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSV60600MZ4T3G?
NSV60600MZ4T3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSV60600MZ4T3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSV60600MZ4T3G?
For technical support, including NSV60600MZ4T3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV60600MZ4T3G requirements.
6.How does Aetrix verify that NSV60600MZ4T3G is sourced from the original manufacturer or authorized distributors?
All NSV60600MZ4T3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV60600MZ4T3G meets industry standards.
7.What is the process for return or replacement of NSV60600MZ4T3G?
All NSV60600MZ4T3G units undergo pre-shipment inspection (PSI). If there is an issue with NSV60600MZ4T3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSV60600MZ4T3G part is unused and in its original packaging.
Return procedure for NSV60600MZ4T3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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