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onsemi NSV60601MZ4T1G
- Part No.:
- NSV60601MZ4T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
NSV60601MZ4T1G.pdf
- Description:
- TRANS NPN 60V 6A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:1,638
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Product details
Overview
NSV60601MZ4T1G from onsemi is an NPN low VCE(sat) transistor rated for 60 V, 6.0 A continuous collector current, with typical VCE(sat) of 40 mV at IC = 6.0 A and IB = 0.6 A. It delivers high DC current gain (hFE = 50–360), operates up to +150 °C junction temperature, and is housed in a thermally enhanced SOT-223 package. It serves as a high-efficiency switching element in DC-DC converters and automotive airbag deployment circuits.
For engineers reviewing the NSV60601MZ4T1G datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal derating behavior, AEC-Q101 qualification status, SOT-223 terminal mapping, and validated alternative transistors for automotive and portable power management designs.
Technical Context
This device belongs to onsemi's e2PowerEdge family and is optimized for low-voltage, high-speed switching where minimal conduction loss is critical. Its ultra-low saturation voltage (down to 40 mV) and high current gain enable direct drive from PMU control outputs without external buffer stages.
The transistor supports pulsed operation up to 12 A peak collector current and exhibits fT = 100 MHz, making it suitable for both power switching and analog amplification roles. Thermal resistance RJA is 64 °C/W with 645 mm² copper pad - confirming its suitability for compact, high-power-density PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - Maximum safe collector-emitter blocking voltage under open-base conditions; defines system-level voltage margin in 48 V and 36 V automotive subsystems. |
| IC (continuous) | 6.0 A - Continuous DC current handling capability at TA = 25 °C with 645 mm² copper; enables use in 30 W–40 W load switches without heatsinking. |
| VCE(sat) @ 6 A | 0.040 V - Confirmed saturation voltage at full rated current; yields <150 mW conduction loss, reducing thermal stress in battery-powered systems. |
| hFE @ 6 A | 50 - Minimum DC current gain at full load; ensures stable base drive design with ≤12% base current overhead for reliable turn-on. |
| fT | 100 MHz - Current-gain bandwidth product; supports switching frequencies up to ~10 MHz in small-signal amplifier configurations. |
| RJA | 64 °C/W - Junction-to-ambient thermal resistance with large copper pad; allows 2.0 W dissipation at ambient ≤75 °C without forced airflow. |
| TJ max | +150 °C - Maximum junction temperature rating; qualifies NSV60601MZ4T1G for under-hood automotive applications per AEC-Q101. |
Pinout & Package
SOT-223 (TO-261, Case 318E-04) surface-mount package with exposed collector tab for thermal and electrical connection. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (dual-collector configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input | Receives base current to bias transistor into saturation; requires ≥0.6 A drive for full 6 A output with guaranteed VCE(sat). |
| 2 (Collector) | High-side power path | Primary collector terminal; electrically and thermally connected to exposed metal tab for low-inductance, low-resistance power routing. |
| 3 (Emitter) | Reference node | Common emitter return path; must be routed with low-impedance trace to minimize switching noise coupling into control circuitry. |
| 4 (Collector) | Secondary collector path | Dual-collector configuration improves current sharing and thermal spreading; both pins 2 and 4 connect internally to same collector region. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including airbag deployment and instrument clusters; includes PPAP documentation support. |
| Ultra-low VCE(sat) | As low as 40 mV at 6 A - reduces conduction losses by >50% vs. standard bipolar transistors, extending battery life in portable devices. |
| High hFE linearity | hFE = 50–360 across 0.05–6 A range - enables predictable base drive sizing and stable analog gain in linear regulator feedback paths. |
| Pb-free, RoHS-compliant | Halogen-free/BFR-free construction meets global environmental compliance requirements for automotive and consumer electronics. |
| Thermally robust SOT-223 | RJA = 64 °C/W with 645 mm² copper - supports 2.0 W continuous dissipation in space-constrained industrial modules without heatsinks. |
Applications
| Automotive Airbag Deployment | Portable DC-DC Converter |
|---|---|
|
Use Scenario: High-reliability switching of squib firing current in passive safety systems. IC Role / Device Role / Timing Role: NPN power switch controlling 1–2 A pulse through pyrotechnic initiator with sub-100 ns turn-off. Use Value: AEC-Q101 qualification and 150 °C TJ rating ensure functional safety compliance; low VCE(sat) minimizes energy loss during critical 2 ms firing window. |
Use Scenario: Main synchronous rectifier or primary-side switch in buck converter for smartphone charging ICs. IC Role / Device Role / Timing Role: Low-loss power transistor operating at 500 kHz–1 MHz switching frequency in 5–12 V input, 3.3 V/2 A output stage. Use Value: 40 mV VCE(sat) at 6 A cuts conduction loss to <150 mW, enabling >94% efficiency and eliminating need for active cooling. |
| Hard Disk Drive Motor Control | Industrial 24 V Load Switch |
|
Use Scenario: Low-voltage H-bridge driver for spindle and voice coil motor actuation in 2.5″ HDDs. IC Role / Device Role / Timing Role: High-gain NPN switch delivering precise 0.5–3 A current pulses with fast rise/fall times (tr = 115 ns, tf = 125 ns). Use Value: 100 MHz fT and low Cibo/Cobo (400 pF / 37 pF) ensure clean commutation edges and reduced EMI in dense storage enclosures. |
Use Scenario: Solid-state replacement for electromechanical relay in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Robust 6 A load switch managing 24 V DC solenoid, valve, or indicator loads with overtemperature protection. Use Value: 60 V VCEO provides 2× system voltage margin; SOT-223 dual-collector layout supports 2.0 W continuous dissipation at 75 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS60601MZ4T1G | Non-automotive grade; no AEC-Q101 qualification; identical electrical specs and SOT-223 package. | Targeted at consumer/portable electronics; not approved for automotive safety-critical functions. | Select when AEC-Q101 is unnecessary and cost sensitivity is higher. |
| Diodes Incorporated DXT60600ZQ-13 | 60 V/6 A NPN with VCE(sat) = 0.055 V @ 6 A; hFE min = 40; SOT-223 package; AEC-Q101 qualified. | Higher VCE(sat) increases conduction loss by ~37% at full load; otherwise functionally aligned for airbag and motor control. | Choose if supply chain diversification is required and 15 mV higher saturation voltage is acceptable. |
Compared with NSS60601MZ4T1G and DXT60600ZQ-13, NSV60601MZ4T1G offers the lowest VCE(sat) among AEC-Q101-qualified 6 A NPN transistors in SOT-223, delivering superior thermal performance and efficiency in safety-critical automotive and high-reliability industrial switching.
Availability
NSV60601MZ4T1G is available at Aetrix Electronics and suitable for automotive airbag systems, portable DC-DC converters, and industrial 24 V load switching requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for NSV60601MZ4T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in automotive, industrial, cloud, and IoT power management solutions.
The e2PowerEdge family - to which NSV60601MZ4T1G belongs - was engineered specifically for high-current, low-loss switching in automotive safety systems and portable power conversion, emphasizing AEC-Q101 reliability and ultra-low VCE(sat).
FAQ
What is the maximum continuous collector current rating for NSV60601MZ4T1G?
The NSV60601MZ4T1G is rated for 6.0 A continuous collector current at TA = 25 °C with a 645 mm² copper pad. Derating applies above 25 °C at 15.6 mW/°C, supporting 3.5 A at 75 °C ambient. This rating is confirmed in the datasheet's Thermal Characteristics table (Note 2) and aligns with its 2.0 W total device dissipation limit.
Is NSV60601MZ4T1G qualified for automotive applications?
Yes, NSV60601MZ4T1G carries the NSV prefix indicating AEC-Q101 qualification and PPAP capability. It is explicitly approved for automotive airbag deployment and instrument cluster use, with full temperature range operation from −55 °C to +150 °C and rigorous stress testing per the AEC standard.
What is the VCE(sat) of NSV60601MZ4T1G at full 6 A load?
At IC = 6.0 A and IB = 0.6 A, the NSV60601MZ4T1G achieves a typical VCE(sat) of 0.040 V, with a maximum of 0.060 V under those conditions. This value is specified in the Electrical Characteristics table (ON CHARACTERISTICS section) and enables <150 mW conduction loss at full rated current.
Which package does NSV60601MZ4T1G use, and how are its pins configured?
NSV60601MZ4T1G uses the SOT-223 (TO-261, Case 318E-04) package with Style 1 pinout: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector. The dual-collector configuration (Pins 2 and 4) enhances thermal spreading and current handling, and the exposed collector tab serves as both thermal path and electrical connection.
How does NSV60601MZ4T1G compare to NSS60601MZ4T1G?
NSV60601MZ4T1G and NSS60601MZ4T1G share identical electrical specifications and SOT-223 packaging, but only NSV60601MZ4T1G is AEC-Q101 qualified and PPAP capable. The NSV prefix denotes automotive-grade traceability, process controls, and site-specific change management - making NSV60601MZ4T1G mandatory for safety-critical automotive designs.
NSV60601MZ4T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 6 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 600mA, 6A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 1A, 2V
- Power - Max:
- 800 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223 (TO-261)
NSV60601MZ4T1G FAQ
1.How can I place an order for NSV60601MZ4T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSV60601MZ4T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSV60601MZ4T1G reliable?
The price and inventory of NSV60601MZ4T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV60601MZ4T1G is usually 5 days.
3.What payment methods are accepted for NSV60601MZ4T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV60601MZ4T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSV60601MZ4T1G?
NSV60601MZ4T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSV60601MZ4T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSV60601MZ4T1G?
For technical support, including NSV60601MZ4T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV60601MZ4T1G requirements.
6.How does Aetrix verify that NSV60601MZ4T1G is sourced from the original manufacturer or authorized distributors?
All NSV60601MZ4T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV60601MZ4T1G meets industry standards.
7.What is the process for return or replacement of NSV60601MZ4T1G?
All NSV60601MZ4T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSV60601MZ4T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSV60601MZ4T1G part is unused and in its original packaging.
Return procedure for NSV60601MZ4T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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