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onsemi NSV60601MZ4T3G
- Part No.:
- NSV60601MZ4T3G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
NSV60601MZ4T3G.pdf
- Description:
- TRANS NPN 60V 6A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:3,781
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Product details
Overview
NSV60601MZ4T3G from onsemi is an automotive-grade NPN low VCE(sat) transistor rated for 60 V VCEO, 6.0 A continuous collector current, and 2.0 W power dissipation at TA = 25 °C with SOT-223 (TO-261) package. It delivers ultra-low saturation voltage down to 40 mV at IC = 6.0 A / IB = 0.6 A and high DC current gain (hFE = 50–360), enabling efficient switching in battery-powered DC-DC converters and motor control circuits.
For engineers reviewing the NSV60601MZ4T3G datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal derating behavior, AEC-Q101 qualification status, SOT-223 pin assignment, and validated alternative transistors for automotive and portable power management designs.
Technical Context
This device belongs to onsemi's e2PowerEdge family and uses a planar epitaxial NPN structure optimized for low conduction loss and fast switching. Its linear gain (Beta) supports analog amplifier use, while its low VCE(sat) and high hFE allow direct drive from PMU outputs without external base resistors in many configurations.
The transistor features complementary pairing with NSS60600MZ4, operates across −55 °C to +150 °C junction temperature range, and achieves fT = 100 MHz at IC = 500 mA / VCE = 10 V - confirming suitability for medium-frequency switching applications up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - Maximum safe collector-emitter voltage before breakdown; sets upper limit for DC-DC converter input or motor supply rail selection. |
| IC (cont.) | 6.0 A - Continuous collector current rating at TA = 25 °C with 645 mm² copper; defines maximum steady-state load current capability. |
| VCE(sat) | 40–300 mV - Saturation voltage range across IC = 0.1–6.0 A; directly determines conduction loss and thermal rise in switching nodes. |
| hFE | 50–360 - DC current gain at IC = 500 mA–6.0 A; enables low-base-drive-current operation and simplifies gate driver interface design. |
| fT | 100 MHz - Current-gain bandwidth product; confirms usable switching speed for PWM frequencies ≤ 500 kHz with margin. |
| RJA | 64 °C/W - Junction-to-ambient thermal resistance with 645 mm² PCB copper; used to calculate max allowable power at target ambient temperature. |
Pinout & Package
SOT-223 (TO-261) package, case 318E-04, Style 1 - surface-mount, thermally enhanced 4-pin outline with exposed collector tab (pins 2 and 4) for improved heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input node; requires current-limited drive (e.g., 60 mA–600 mA) to achieve specified VCE(sat) performance. |
| 2 | Collector | Main power output terminal; electrically connected to pin 4 and internal die substrate; must be routed to thermal pad on PCB. |
| 3 | Emitter | Reference/return path for collector current; common connection point for load return and base bias reference in low-side switch topology. |
| 4 | Collector | Duplicate collector terminal for mechanical stability and lower thermal resistance; shares same node as pin 2 and must be tied to same net. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood and instrument cluster use per stress test requirements; supports PPAP documentation. |
| Ultra-low VCE(sat) | As low as 40 mV at IC = 6.0 A / IB = 0.6 A - reduces conduction losses by >50% vs. standard general-purpose transistors. |
| High hFE linearity | hFE remains ≥100 up to IC = 2.0 A - ensures stable gain in analog amplifier configurations and predictable base drive sizing. |
| Pb-Free, RoHS compliant | Halogen-free/BFR-free construction with Pb-free plating - meets global environmental compliance mandates for automotive and consumer electronics. |
Applications
| DC-DC Converters | Automotive Instrument Clusters |
|---|---|
|
Use Scenario: Step-down (buck) regulator in portable medical devices and USB-C PD adapters requiring <100 mV dropout and <100 µA quiescent current. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diode to reduce forward voltage drop and improve efficiency at 1–3 A loads. Use Value: Achieves >92% efficiency at 5 V/2 A output due to 40–60 mV VCE(sat), reducing thermal load on compact PCBs. |
Use Scenario: Backlight dimming and gauge motor drive in automotive digital instrument clusters operating across −40 °C to +105 °C ambient. IC Role / Device Role / Timing Role: High-current, low-loss switching element controlling 12 V LED strings and stepper motor phases. Use Value: AEC-Q101 qualification and 150 °C TJ(max) ensure reliability under thermal cycling; 6.0 A rating supports multi-segment display drivers. |
| Portable Audio Power Stages | Disc Drive Spindle Control |
|
Use Scenario: Class AB output stage in Bluetooth speaker amplifiers with Li-ion battery input (3.0–4.2 V) and 5 W RMS output requirement. IC Role / Device Role / Timing Role: Linear amplifier transistor leveraging high hFE and low VBE(sat) (0.9 V) for precise biasing and minimal crossover distortion. Use Value: Linear gain stability over temperature enables consistent THD+N <0.5% without feedback trimming across production lots. |
Use Scenario: Speed-regulated spindle motor control in 2.5″ HDDs using PWM-driven H-bridge with discrete NPN/PNP pairs. IC Role / Device Role / Timing Role: High-efficiency, low-noise switching transistor in low-voltage (5 V) half-bridge leg driving brushed DC spindle motors. Use Value: 100 MHz fT and fast switching (tr/tf < 125 ns) support clean 20–50 kHz PWM without audible noise or torque ripple. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS60601MZ4T3G | No NSV prefix; not AEC-Q101 qualified; identical electrical specs and SOT-223 package. | Targeted for industrial/commercial DC-DC and motor control; lacks automotive qualification documentation. | Select when AEC-Q101 is not required and cost sensitivity favors non-automotive grade. |
| Diodes Incorporated DXT60601Q-7 | Same VCEO (60 V), IC (6 A), SOT-223 package; VCE(sat) = 55 mV @ 6 A; hFE = 40–200; no AEC-Q101 listing. | Designed for general-purpose switching; lower hFE requires higher base drive; suitable for cost-sensitive consumer power supplies. | Choose when thermal margin allows slightly higher VCE(sat) and automotive qualification is unnecessary. |
Compared with NSS60601MZ4T3G and DXT60601Q-7, NSV60601MZ4T3G uniquely combines AEC-Q101 qualification, lowest VCE(sat) (40 mV), and highest hFE (360) - making it the only option qualified for safety-critical automotive subsystems requiring both robustness and efficiency.
Availability
NSV60601MZ4T3G is available at Aetrix Electronics and suitable for automotive instrument clusters, portable DC-DC converters, and disc drive spindle control requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for NSV60601MZ4T3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The e2PowerEdge family - including NSV60601MZ4T3G - was engineered specifically for high-efficiency, low-voltage switching in automotive and portable power systems where ultra-low VCE(sat) and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum junction temperature rating for NSV60601MZ4T3G?
The NSV60601MZ4T3G has a specified junction and storage temperature range of −55 °C to +150 °C. This rating is validated per AEC-Q101 stress testing and supports operation in under-hood automotive environments and high-power-density portable electronics where thermal management is critical. The device must be operated within this range to maintain reliability and parametric performance.
Is NSV60601MZ4T3G pin-compatible with NSS60601MZ4T3G?
Yes, NSV60601MZ4T3G is pin-compatible with NSS60601MZ4T3G - both use identical SOT-223 (TO-261) package with Style 1 pinout (Base–Collector–Emitter–Collector). Electrical specifications match exactly; the only functional difference is the NSV prefix indicating AEC-Q101 qualification and PPAP capability for automotive applications.
What is the typical VCE(sat) of NSV60601MZ4T3G at 6.0 A collector current?
The typical VCE(sat) of NSV60601MZ4T3G at IC = 6.0 A and IB = 0.6 A is 40 mV, with a maximum of 300 mV under worst-case conditions. This ultra-low saturation voltage is confirmed in the datasheet's Electrical Characteristics table and enables high-efficiency operation in high-current switching nodes such as buck converter low-side switches.
Does NSV60601MZ4T3G require a heatsink in standard SOT-223 mounting?
NSV60601MZ4T3G does not require an external heatsink when mounted on a PCB with ≥645 mm² of 1 oz. copper (RJA = 64 °C/W). At 2.0 W dissipation and 25 °C ambient, junction temperature rises to ~153 °C - exceeding 150 °C limit. Therefore, for sustained 2.0 W operation, thermal relief (e.g., larger copper area or internal layer planes) is necessary to keep TJ within spec.
What is the base-emitter saturation voltage VBE(sat) specification for NSV60601MZ4T3G?
The base-emitter saturation voltage VBE(sat) for NSV60601MZ4T3G is specified as 0.900 V maximum at IC = 1.0 A and IB = 0.1 A. This value is critical for calculating required base drive voltage headroom and verifying compatibility with low-voltage PMU outputs in battery-powered systems.
NSV60601MZ4T3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 6 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 600mA, 6A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 1A, 2V
- Power - Max:
- 800 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223 (TO-261)
NSV60601MZ4T3G FAQ
1.How can I place an order for NSV60601MZ4T3G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSV60601MZ4T3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSV60601MZ4T3G reliable?
The price and inventory of NSV60601MZ4T3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSV60601MZ4T3G is usually 5 days.
3.What payment methods are accepted for NSV60601MZ4T3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSV60601MZ4T3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSV60601MZ4T3G?
NSV60601MZ4T3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSV60601MZ4T3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSV60601MZ4T3G?
For technical support, including NSV60601MZ4T3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSV60601MZ4T3G requirements.
6.How does Aetrix verify that NSV60601MZ4T3G is sourced from the original manufacturer or authorized distributors?
All NSV60601MZ4T3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSV60601MZ4T3G meets industry standards.
7.What is the process for return or replacement of NSV60601MZ4T3G?
All NSV60601MZ4T3G units undergo pre-shipment inspection (PSI). If there is an issue with NSV60601MZ4T3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSV60601MZ4T3G part is unused and in its original packaging.
Return procedure for NSV60601MZ4T3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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