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onsemi NSVBC848BWT1G
- Part No.:
- NSVBC848BWT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
NSVBC848BWT1G.pdf
- Description:
- TRANS NPN 30V 0.1A SC70-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,640
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Product details
Overview
NSVBC848BWT1G from onsemi is an NPN silicon general-purpose transistor in SC-70 (SOT-323) package, rated for 30 V VCEO, 100 mA IC, and 200 mW power dissipation at TA = 25 °C. It delivers hFE = 200–450 at IC = 2.0 mA, VCE = 5.0 V, and supports automotive applications per AEC-Q101 qualification. It is used in low-power switching and amplification circuits in sensor signal conditioning and LED driver stages.
For engineers reviewing the NSVBC848BWT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its 30 V collector-emitter breakdown voltage, 200–450 DC current gain range, SC-70 thermal performance (RJA = 620 °C/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This NPN bipolar junction transistor operates in linear amplification and saturated switching modes with verified VCE(sat) ≤ 0.6 V at IC = 10 mA / IB = 0.5 mA and VBE(sat) ≤ 0.9 V under same conditions. Its fT = 100 MHz enables RF-capable small-signal amplification up to VHF band, while Cobo = 4.5 pF at VCB = 10 V supports stable high-frequency biasing.
The device features a maximum junction temperature of +150 °C and storage range from −55 °C to +150 °C, with thermal resistance RJA = 620 °C/W on FR-5 board. Its AEC-Q101 qualification confirms robustness against temperature cycling, humidity, and mechanical stress required for automotive body electronics and infotainment subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in 24 V automotive switch designs. |
| IC | 100 mA - Continuous collector current rating; supports driving small relays, LEDs, or logic-level interfaces without heatsinking. |
| hFE | 200–450 - DC current gain range at IC = 2.0 mA, VCE = 5.0 V; ensures predictable base drive sizing across production lots. |
| fT | 100 MHz - Current-gain bandwidth product; enables stable small-signal amplification up to ~30 MHz with gain margin. |
| VCE(sat) | ≤ 0.6 V - Collector-emitter saturation voltage at IC = 10 mA / IB = 0.5 mA; minimizes conduction loss in low-side switching. |
| RJA | 620 °C/W - Junction-to-ambient thermal resistance on FR-5 board; informs derating above 25 °C ambient for reliable operation. |
| AEC-Q101 | Qualified - Validated for automotive use including temperature cycling, HTRB, and ESD testing; supports PPAP documentation. |
Pinout & Package
NSVBC848BWT1G uses the SC-70 (SOT-323) surface-mount package (Case 419, Style 3), measuring 2.2 mm × 1.35 mm × 0.95 mm with gull-wing leads. It is Pb-free, halogen-free, and RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased junction; requires current-limited drive (e.g., 10–50 µA typical for 10 mA IC). |
| 2 | Emiter | Reference node for emitter-grounded configurations; connects to system ground or low-impedance return path. |
| 3 | Collector | Output terminal carrying load current; placed toward higher potential side (e.g., 12–24 V rail in automotive switches). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood and cabin applications including temperature cycling, HTRB, and mechanical shock tests. |
| SC-70 footprint | Enables high-density PCB layouts with 0.65 mm lead pitch; compatible with standard SMT reflow profiles (J-STD-020). |
| Low VCE(sat) | ≤ 0.6 V at IC/IB = 20 ensures <10 mW conduction loss at 10 mA, critical for battery-powered sensor nodes. |
| High hFE consistency | 200–450 range at IC = 2.0 mA allows single-base-resistor biasing across manufacturing lots without trimming. |
| Pb-free & RoHS | Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-020; eliminates lead contamination risk in end-of-life recycling. |
Applications
| Automotive Interior Lighting | Industrial Sensor Signal Conditioning |
|---|---|
|
Use Scenario: Driving 20 mA white LEDs in dashboard backlighting modules powered from 12 V supply. IC Role / Device Role / Timing Role: Low-side switch controlling LED current path to ground; operates in saturation mode with fixed base resistor. Use Value: VCE(sat) ≤ 0.6 V limits power loss to <12 mW per LED, enabling compact thermal design without heatsink. |
Use Scenario: Amplifying millivolt-level output from thermistor-based temperature sensors in PLC analog input modules. IC Role / Device Role / Timing Role: Common-emitter amplifier stage providing 10–50× gain with DC-coupled feedback network. Use Value: hFE = 200–450 ensures stable gain over −40 °C to +85 °C, reducing calibration drift in industrial environments. |
| USB-C Power Delivery Monitoring | Smart Home Motion Detector Biasing |
|
Use Scenario: Switching enable signals for USB-C port protection ICs during hot-plug detection sequences. IC Role / Device Role / Timing Role: Digital switch translating 3.3 V microcontroller GPIO to 5 V logic-high enable line. Use Value: Fast turn-on/off (fT = 100 MHz) ensures sub-microsecond response, meeting USB PD specification timing margins. |
Use Scenario: Providing stable bias current to PIR sensor amplifier ICs in battery-operated occupancy sensors. IC Role / Device Role / Timing Role: Constant-current source setting operating point for op-amp front-end stages. Use Value: Low ICBO ≤ 15 nA at 30 V ensures <100 nA leakage into bias network, preserving >1-year battery life in sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC848BWT1G | No NSV prefix; not AEC-Q101 qualified or PPAP capable; identical electrical specs and SC-70 package. | Suitable for commercial/industrial use only; cannot be used in automotive OEM BOMs requiring PPAP submission. | Select BC848BWT1G only when AEC-Q101 compliance is not required and cost optimization is prioritized. |
| MMBT3904LT1G | Higher VCEO = 40 V, lower hFE = 100–300, same SC-70 package and RoHS compliance; not AEC-Q101 qualified. | Better suited for 36 V systems but less gain stability; lacks automotive qualification for safety-critical modules. | Choose MMBT3904LT1G where higher voltage margin is needed and automotive qualification is unnecessary. |
Compared with BC848BWT1G, NSVBC848BWT1G adds AEC-Q101 qualification and PPAP capability without electrical trade-offs, making it the sole choice for automotive Tier-1 suppliers; versus MMBT3904LT1G, it trades 10 V headroom for tighter hFE control and certified automotive reliability.
Availability
NSVBC848BWT1G is available at Aetrix Electronics and suitable for automotive interior lighting, industrial sensor signal conditioning, USB-C power delivery monitoring, and smart home motion detector biasing requiring stable component supply across long production lifecycles.
Supply support for NSVBC848BWT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
NSVBC848BWT1G belongs to the BC846/BC847/BC848 family of general-purpose NPN transistors designed for low-power surface-mount switching and amplification in cost-sensitive, space-constrained applications.
FAQ
What is the maximum collector-emitter voltage rating for NSVBC848BWT1G?
The NSVBC848BWT1G has a maximum collector-emitter voltage (VCEO) rating of 30 V. This value is confirmed in the "Maximum Ratings" table of the official onsemi datasheet (Rev. 13, November 2024) and applies under continuous DC conditions at TA = 25 °C. Exceeding this voltage risks irreversible breakdown.
Is NSVBC848BWT1G qualified for automotive applications?
Yes, NSVBC848BWT1G is AEC-Q101 qualified and PPAP capable, as explicitly stated in the "Features" section and "Ordering Information" page of the onsemi datasheet. The "NSV" prefix denotes automotive-specific site and control change requirements, distinguishing it from commercial variants like BC848BWT1G.
What package type does NSVBC848BWT1G use?
NSVBC848BWT1G uses the SC-70 (also known as SOT-323) surface-mount package, identified as Case 419, Style 3 in onsemi's mechanical drawings. Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector - verified in the "Mechanical Case Outline" section of the datasheet.
What is the DC current gain (hFE) range for NSVBC848BWT1G?
The NSVBC848BWT1G exhibits hFE = 200–450 when tested at IC = 2.0 mA and VCE = 5.0 V, per the "Electrical Characteristics" table. This range reflects the 'B' gain group within the BC848 series and is guaranteed across the full operating temperature range (−55 °C to +150 °C).
Does NSVBC848BWT1G have lead-free and RoHS-compliant construction?
Yes, NSVBC848BWT1G is Pb-free, halogen-free/BFR-free, and fully RoHS compliant, as confirmed in the "Features" section of the onsemi datasheet. The "G" suffix in the part number denotes Pb-free packaging, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements.
NSVBC848BWT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3 (SOT323)
NSVBC848BWT1G FAQ
1.How can I place an order for NSVBC848BWT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSVBC848BWT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSVBC848BWT1G reliable?
The price and inventory of NSVBC848BWT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBC848BWT1G is usually 5 days.
3.What payment methods are accepted for NSVBC848BWT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBC848BWT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSVBC848BWT1G?
NSVBC848BWT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSVBC848BWT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSVBC848BWT1G?
For technical support, including NSVBC848BWT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBC848BWT1G requirements.
6.How does Aetrix verify that NSVBC848BWT1G is sourced from the original manufacturer or authorized distributors?
All NSVBC848BWT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBC848BWT1G meets industry standards.
7.What is the process for return or replacement of NSVBC848BWT1G?
All NSVBC848BWT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSVBC848BWT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSVBC848BWT1G part is unused and in its original packaging.
Return procedure for NSVBC848BWT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSVBC848BWT1G Tags
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MMBT3906LT1G
onsemi
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MMBT3904-7-F
Diodes Incorporated
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MMBT3904LT1G
onsemi
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MMBT3906-7-F
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MMBT3904-TP
Micro Commercial Co
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MMBT2222A-7-F
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BC846BLT1G
onsemi
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BC847B,215
Nexperia USA Inc.
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MMBT2222A-TP
Micro Commercial Co
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MMBTA06LT1G
onsemi
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MMBT2222ALT1G
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