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onsemi NSVBC848CLT1G

Part No.:
NSVBC848CLT1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixNSVBC848CLT1G.pdf
Description:
TRANS NPN 30V 0.1A SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,185

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Product details

Overview

NSVBC848CLT1G from onsemi is an NPN silicon general-purpose transistor in SOT-23 package, rated for 30 VCEO, 100 mA continuous collector current, and 225 mW power dissipation on FR-5 board. It delivers hFE = 420–800 at IC = 2.0 mA, VCE = 5.0 V, and VCE(sat) ≤ 0.25 V at IC = 10 mA/IB = 0.5 mA - used in automotive signal switching and low-power amplifier stages.

For engineers reviewing the NSVBC848CLT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, SOT-23 footprint compatibility, guaranteed hFE binning (C-grade), and ESD robustness (>4 kV HBM) for under-hood sensor interface circuits.

Technical Context

This device belongs to the BC846ALT1G series of automotive-grade NPN transistors with fully specified DC gain across temperature (−55°C to +150°C), defined saturation behavior at two operating points (IC/IB = 20), and fT = 100 MHz for small-signal amplification. Its thermal resistance RJA = 556°C/W on FR-5 board enables stable operation in compact PCB layouts without forced cooling.

The NSV prefix confirms AEC-Q101 qualification and PPAP capability, while the "C" suffix denotes the highest hFE bin (420–800). It shares identical SOT-23 pinout (Emitter-Base-Collector, Pin 1–2–3) and maximum ratings with BC848A/B variants but differs in guaranteed DC current gain range and automotive traceability.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO30 V - supports switching 24 V automotive loads with 2× safety margin
IC Continuous100 mA - suitable for driving LEDs, relays, and logic-level interfaces
hFE (Min/Max)420–800 at IC = 2.0 mA - ensures consistent biasing in linear amplifier designs
VCE(sat)≤ 0.25 V at IC = 10 mA/IB = 0.5 mA - minimizes conduction loss in saturated switch mode
fT100 MHz - enables RF preamp and high-speed digital signal conditioning up to ~10 MHz
ESD Rating (HBM)> 4000 V - withstands handling and assembly without protection circuitry
PD (FR-5)225 mW - defines max power before thermal derating begins at 25°C ambient

Pinout & Package

SOT-23 (TO-236) package: 2.90 mm × 1.30 mm × 1.00 mm body, 1.90 mm lead pitch, JEDEC-compliant footprint with gull-wing leads.

Pin/TerminalCircuit RoleDesign Meaning
1BaseCurrent-controlled input node; requires 0.5–5 mA drive for full saturation
2EmitterCommon reference terminal; tied to ground or low-side return path
3CollectorOutput current sink; connects to load and positive supply rail

Key Features

FeatureDesign Value
AEC-Q101 QualifiedValidated for automotive applications including engine control, body electronics, and ADAS sensor interfaces
Moisture Sensitivity Level 1No floor life limitation; safe for standard SMT reflow without dry pack or baking
Pb-Free / RoHS CompliantMeets global environmental regulations; compatible with lead-free soldering processes
High hFE Bin (C)Guaranteed minimum DC gain of 420 reduces base drive requirements in space-constrained designs
Low VCE(sat)≤ 0.25 V at IC = 10 mA enables efficient switching in battery-powered modules

Applications

Automotive Sensor InterfaceLED Driver Circuit

Use Scenario: Amplifying analog output from temperature or pressure sensors in engine bay environments.

IC Role / Device Role / Timing Role: NPN common-emitter amplifier providing 10–20× voltage gain with stable bias over −40°C to +125°C.

Use Value: High hFE bin ensures minimal base current draw, reducing loading on low-output-impedance sensors.

Use Scenario: Switching 24 V LED strings in interior lighting or dashboard backlighting.

IC Role / Device Role / Timing Role: Low-side saturated switch controlling current flow through LED anodes tied to supply.

Use Value: VCE(sat) ≤ 0.25 V limits power loss to <10 mW per LED string, improving thermal reliability.

Microcontroller GPIO ExpanderIndustrial Signal Conditioning

Use Scenario: Driving higher-current peripherals (e.g., solenoids, buzzers) from 3.3 V MCU outputs.

IC Role / Device Role / Timing Role: Digital switch translating logic-high to collector current sink, enabling >10× current amplification.

Use Value: Guaranteed hFE ≥ 420 allows reliable turn-on with 0.5 mA base drive, matching typical MCU GPIO limits.

Use Scenario: Level-shifting and buffering analog signals between isolated subsystems in PLC I/O modules.

IC Role / Device Role / Timing Role: Emitter-follower buffer isolating source impedance while preserving signal fidelity.

Use Value: fT = 100 MHz supports bandwidths up to 10 MHz, sufficient for fast industrial analog sampling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC848CLT1GNo NSV prefix; commercial grade, not AEC-Q101 qualifiedLacks automotive qualification and PPAP documentation supportSelect when automotive compliance is not required and cost sensitivity is higher
NSVBC847BLT1GLower hFE bin (200–450); same VCEO = 45 V, higher VEBO = 6.0 VBetter suited for higher-voltage bias networks where gain tolerance is relaxedChoose when wider VCEO margin is needed and lower gain suffices for stability

Compared with BC848CLT1G and NSVBC847BLT1G, NSVBC848CLT1G offers the highest guaranteed hFE among automotive-qualified SOT-23 NPN transistors in this family, making it optimal for precision biasing and low-base-drive applications where thermal and voltage margins are already satisfied.

Availability

NSVBC848CLT1G is available at Aetrix Electronics and suitable for automotive sensor interfaces, LED driver circuits, microcontroller GPIO expansion, and industrial signal conditioning requiring stable component supply across production lifecycles.

Supply support for NSVBC848CLT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The BC846ALT1G series - including NSVBC848CLT1G - was designed for high-reliability general-purpose switching and amplification in automotive electronics, with emphasis on AEC-Q101 compliance, thermal robustness, and SMT manufacturability.

FAQ

What is the maximum collector-emitter voltage rating for NSVBC848CLT1G?

The NSVBC848CLT1G has a maximum collector-emitter voltage (VCEO) rating of 30 Vdc. This value is specified under test conditions of IC = 10 mA and applies across the full operating temperature range. Exceeding 30 V risks breakdown and permanent damage, so design margins should maintain VCE ≤ 24 V in 24 V automotive systems using NSVBC848CLT1G.

Is NSVBC848CLT1G pin-compatible with BC848BLT1G?

Yes, NSVBC848CLT1G is pin-compatible with BC848BLT1G - both use SOT-23 package with identical pinout (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector) and mechanical dimensions. However, NSVBC848CLT1G adds AEC-Q101 qualification, PPAP capability, and tighter hFE binning (C-grade), while BC848BLT1G is commercial-grade with lower hFE (200–450).

What does the "NSV" prefix indicate on NSVBC848CLT1G?

On NSVBC848CLT1G, the "NSV" prefix indicates automotive-grade qualification per AEC-Q101, PPAP capability, and unique site/control change requirements. It distinguishes this part from commercial versions (e.g., BC848CLT1G) by ensuring enhanced traceability, extended temperature validation (−55°C to +150°C), and process controls required for automotive production.

What is the typical DC current gain (hFE) of NSVBC848CLT1G at 25°C?

The typical DC current gain (hFE) of NSVBC848CLT1G at 25°C is 520, measured at IC = 2.0 mA and VCE = 5.0 V. The guaranteed minimum is 420 and maximum is 800 for the "C" gain bin. This high hFE reduces required base drive current, improving efficiency in low-power amplifier and switching applications using NSVBC848CLT1G.

Can NSVBC848CLT1G be used in surface-mount reflow processes without moisture preconditioning?

Yes, NSVBC848CLT1G has Moisture Sensitivity Level (MSL) 1 per J-STD-020, meaning it has unlimited floor life and may be placed directly into reflow soldering without baking or dry-pack storage. This simplifies manufacturing logistics and eliminates yield risk from moisture-induced popcorning during NSVBC848CLT1G assembly.

NSVBC848CLT1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
225 mW
Frequency - Transition:
100MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)

NSVBC848CLT1G FAQ

1.How can I place an order for NSVBC848CLT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSVBC848CLT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSVBC848CLT1G reliable?

The price and inventory of NSVBC848CLT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBC848CLT1G is usually 5 days.

3.What payment methods are accepted for NSVBC848CLT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBC848CLT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSVBC848CLT1G?

NSVBC848CLT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSVBC848CLT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSVBC848CLT1G?

For technical support, including NSVBC848CLT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBC848CLT1G requirements.

6.How does Aetrix verify that NSVBC848CLT1G is sourced from the original manufacturer or authorized distributors?

All NSVBC848CLT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBC848CLT1G meets industry standards.

7.What is the process for return or replacement of NSVBC848CLT1G?

All NSVBC848CLT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSVBC848CLT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSVBC848CLT1G part is unused and in its original packaging.

Return procedure for NSVBC848CLT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NSVBC848CLT1G Tags

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