onsemi NSVBC850BLT1G
- Part No.:
- NSVBC850BLT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NSVBC850BLT1G.pdf
- Description:
- TRANS NPN 45V 0.1A SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,890
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Product details
Overview
NSVBC850BLT1G from onsemi is an AEC-Q101 qualified NPN general-purpose transistor in SOT-23 package, rated for VCEO = 45 V, IC = 100 mA, hFE = 200–450 (at IC = 2 mA), VCE(sat) ≤ 0.25 V (IC = 10 mA, IB = 0.5 mA), and fT = 100 MHz - used in automotive signal switching and biasing circuits.
For engineers reviewing the NSVBC850BLT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, 45 V VCEO, 200–450 DC current gain range, SOT-23 thermal performance (RJA = 417 °C/W on alumina), and automotive-grade ESD robustness (>4 kV HBM).
Technical Context
This device operates as a silicon NPN bipolar junction transistor optimized for linear amplification and digital switching in automotive environments. Its design supports stable hFE across −55 °C to +150 °C, low VCE(sat) at moderate drive levels, and noise figure of 4.0 dB at 1 kHz (IC = 0.2 mA).
The NSVBC850BLT1G belongs to the BC846ALT1G Series family with standardized SOT-23 (TO-236) footprint and pinout (Pin 1: Base, Pin 2: Emitter, Pin 3: Collector). It shares maximum ratings and thermal characteristics with BC847B/BC850B variants but carries NSV prefix denoting automotive-specific traceability and PPAP capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage headroom in 12 V/24 V automotive supply rails. |
| IC | 100 mA - Continuous collector current rating; supports medium-current switching in sensor interfaces and LED drivers. |
| hFE | 200–450 - DC current gain at IC = 2 mA, VCE = 5 V; enables predictable base drive sizing for reliable saturation in logic-level control. |
| VCE(sat) | ≤ 0.25 V - Collector-emitter saturation voltage at IC = 10 mA / IB = 0.5 mA; minimizes conduction loss in low-power switching nodes. |
| fT | 100 MHz - Current-gain bandwidth product; supports small-signal amplification up to audio and low-RF frequencies. |
| RJA | 417 °C/W - Junction-to-ambient thermal resistance on 0.4 × 0.3 × 0.024 in alumina substrate; informs heatsinking requirements in thermally constrained modules. |
| ESD HBM | > 4000 V - Human Body Model rating; ensures robustness against handling-induced electrostatic discharge in automotive assembly lines. |
Pinout & Package
SOT-23 (TO-236) surface-mount package, 2.90 mm × 1.30 mm × 1.00 mm body size, 1.90 mm lead pitch, JEDEC standard outline CASE 318 STYLE 6.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased junction; requires current-limited drive (e.g., via 10 kΩ resistor from 3.3 V MCU GPIO) to achieve full saturation. |
| 2 | Emitter | Common reference node for NPN operation; must be tied to system ground or low-side return path in switch configurations. |
| 3 | Collector | Output current path; connects to load (e.g., relay coil, LED anode) with supply rail referenced through external pull-up or active driver. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive temperature cycling, humidity, mechanical shock, and lifetime reliability per stress test requirements. |
| Pb-free, Halogen-free/BFR-free | Complies with RoHS Directive 2011/65/EU and J-STD-609A Class 1 moisture sensitivity level (MSL 1). |
| Low VCE(sat) at 10 mA | Enables <10 mW power dissipation in saturated switching mode, reducing thermal load in dense PCB layouts. |
| High hFE consistency | Guaranteed 200–450 range at 2 mA allows single-resistor base biasing without trimming in production assemblies. |
| 100 MHz fT | Supports clean square-wave edge integrity in PWM-driven loads up to ~10 MHz fundamental frequency. |
Applications
| Automotive Door Module Switching | Engine Control Unit Signal Conditioning |
|---|---|
Use Scenario: Driving window lift motor enable signals and door lock actuator coils in body control modules. IC Role / Device Role: Low-side NPN switch interfacing 3.3 V microcontroller outputs to 12 V inductive loads. Use Value: 45 V VCEO provides margin above battery transients; 0.25 V VCE(sat) limits self-heating during continuous duty cycles. | Use Scenario: Amplifying analog sensor outputs (e.g., throttle position, coolant temp) prior to ADC sampling in ECU front-end. IC Role / Device Role: Common-emitter amplifier stage with fixed-gain bias network. Use Value: 200–450 hFE tolerance enables stable gain setting; 4.0 dB NF preserves SNR in millivolt-level sensor signals. |
| LED Headlamp Dimming Interface | Transmission Control Solenoid Driver |
Use Scenario: PWM-controlled current sink for adaptive LED arrays in modern headlamp systems. IC Role / Device Role: High-speed switching element modulating LED current at 1–10 kHz. Use Value: 100 MHz fT ensures minimal propagation delay and overshoot; MSL 1 rating supports reflow-compatible manufacturing. | Use Scenario: Driving 12 V solenoid valves in automatic transmission hydraulic control units. IC Role / Device Role: Darlington-pair input stage or standalone switch controlling solenoid coil current. Use Value: AEC-Q101 qualification guarantees operation across −40 °C to +150 °C ambient; >4 kV HBM withstands shop-floor ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC850BLT1G | No NSV prefix; commercial-grade qualification (not AEC-Q101), same electrical specs and SOT-23 package. | Lacks PPAP documentation and automotive traceability; suitable for non-safety-critical industrial use only. | Select when automotive compliance is not required and cost optimization is prioritized. |
| NSVBC847BLT1G | VCEO = 45 V (same), but hFE = 200–450 at IC = 10 mA (vs. 2 mA for NSVBC850BLT1G); identical thermal and ESD specs. | Better suited for higher-current biasing where gain stability at 10 mA matters more than at 2 mA. | Choose when circuit operates near 10 mA collector current and tighter hFE binning at that point is needed. |
Compared with BC850BLT1G, NSVBC850BLT1G adds automotive traceability and PPAP support without sacrificing electrical performance; versus NSVBC847BLT1G, it offers superior hFE consistency at low-current bias points critical for MCU-driven logic interfaces.
Availability
NSVBC850BLT1G is available at Aetrix Electronics and suitable for automotive body electronics, engine management subsystems, and transmission control modules requiring stable component supply with full AEC-Q101 compliance and long-term lifecycle assurance.
Supply support for NSVBC850BLT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NSVBC850BLT1G belongs to the BC846ALT1G Series of general-purpose NPN transistors designed specifically for high-reliability automotive signal switching and amplification, with emphasis on AEC-Q101 qualification and PPAP readiness.
FAQ
What is the maximum operating temperature for NSVBC850BLT1G?
The NSVBC850BLT1G has a junction and storage temperature range of −55 °C to +150 °C. This allows reliable operation in under-hood automotive environments where ambient temperatures may exceed 125 °C. The device's thermal resistance (RJA = 417 °C/W on alumina) must be considered alongside power dissipation to ensure TJ remains within this limit during actual use of NSVBC850BLT1G.
Is NSVBC850BLT1G pin-compatible with BC847BLT1G?
Yes, NSVBC850BLT1G is pin-compatible with BC847BLT1G - both use SOT-23 package with STYLE 6 pinout (Pin 1: Base, Pin 2: Emitter, Pin 3: Collector). However, NSVBC850BLT1G carries AEC-Q101 qualification and NSV prefix for automotive traceability, while BC847BLT1G is commercial-grade. Electrical parameters including VCEO, hFE, and VCE(sat) are identical between the two devices.
Does NSVBC850BLT1G support Pb-free soldering processes?
Yes, NSVBC850BLT1G is Pb-free, halogen-free/BFR-free, and RoHS-compliant. It is rated MSL 1 (Moisture Sensitivity Level 1), meaning it can be stored indefinitely at ≤30 °C/85% RH and is compatible with standard lead-free reflow profiles (peak temperature up to 260 °C). No baking is required prior to assembly of NSVBC850BLT1G.
What is the typical noise figure of NSVBC850BLT1G and where is it specified?
The NSVBC850BLT1G has a noise figure of 4.0 dB at IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, and BW = 200 Hz. This value is documented in the "SMALL-SIGNAL CHARACTERISTICS" table on page 2 of the official onsemi datasheet for the BC846ALT1G Series, confirming its suitability for low-noise preamplifier stages in NSVBC850BLT1G-based designs.
Can NSVBC850BLT1G replace BC850BLT1G in an existing design?
Yes, NSVBC850BLT1G can directly replace BC850BLT1G in most cases - they share identical electrical specifications, package, and pinout. The NSV prefix indicates enhanced automotive process controls, AEC-Q101 qualification, and PPAP capability. No layout or schematic changes are needed, but users should verify that their application requires automotive-grade certification before substituting NSVBC850BLT1G for BC850BLT1G.
NSVBC850BLT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
NSVBC850BLT1G FAQ
1.How can I place an order for NSVBC850BLT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSVBC850BLT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSVBC850BLT1G reliable?
The price and inventory of NSVBC850BLT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBC850BLT1G is usually 5 days.
3.What payment methods are accepted for NSVBC850BLT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBC850BLT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSVBC850BLT1G?
NSVBC850BLT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSVBC850BLT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSVBC850BLT1G?
For technical support, including NSVBC850BLT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBC850BLT1G requirements.
6.How does Aetrix verify that NSVBC850BLT1G is sourced from the original manufacturer or authorized distributors?
All NSVBC850BLT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBC850BLT1G meets industry standards.
7.What is the process for return or replacement of NSVBC850BLT1G?
All NSVBC850BLT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSVBC850BLT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSVBC850BLT1G part is unused and in its original packaging.
Return procedure for NSVBC850BLT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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