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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSVBC856BM3T5G

Name: NSVBC856BM3T5G
Brand: onsemi
SKU: NSVBC856BM3T5G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSVBC856BM3T5G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SOT-723

Datasheet:: NSVBC856BM3T5G.pdf

Description:: TRANS PNP 65V 0.1A SOT-723

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NSVBC856BM3T5G from onsemi is a PNP silicon general-purpose transistor in SOT-723 package, rated for −65 V V_CEO, −100 mA I_C, and 265 mW power dissipation on FR-5 board. It delivers h_FE = 220–475 at I_C = −2.0 mA, f_T = 100 MHz, and V_CE(sat) ≤ −0.65 V at I_C = −100 mA, used in automotive signal amplification and biasing circuits.

For engineers reviewing the NSVBC856BM3T5G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, SOT-723 footprint compatibility, −5.0 V V_EBO rating, thermal resistance of 470 °C/W (FR-5), and verified h_FE performance across −55 °C to +150 °C junction temperature range.

Technical Context

This PNP bipolar junction transistor operates in linear amplification and switching modes with DC current gain specified across two test conditions: h_FE ≥ 220 at I_C = −10 mA and ≥ 150 at I_C = −2.0 mA. Its small-signal bandwidth extends to 100 MHz under standard bias (I_C = −10 mA, V_CE = −5.0 V), supporting mid-frequency analog signal conditioning.

Thermal design is constrained by dual dissipation ratings: 265 mW on FR-5 board (derating 2.1 mW/°C above 25 °C) and 640 mW on alumina substrate (derating 5.1 mW/°C). Junction-to-ambient thermal resistance varies significantly between substrates-470 °C/W (FR-5) vs. 195 °C/W (alumina)-requiring layout-aware thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−65 V: Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in high-side switch or amplifier stages.
I_C	−100 mA continuous: Absolute maximum collector current; sets upper limit for load-driving capability in discrete bias networks.
h_FE	220–475: DC current gain at I_C = −2.0 mA to −10 mA; determines base drive requirements for predictable saturation or linear operation.
f_T	100 MHz: Current-gain bandwidth product; confirms suitability for audio and low-MHz signal amplification without excessive phase shift.
V_CE(sat)	≤ −0.65 V at I_C = −100 mA: Low saturation voltage minimizes conduction loss in switching applications and improves efficiency in driver circuits.
R_JA (FR-5)	470 °C/W: Thermal resistance dictates minimum copper area and via count needed to maintain T_J ≤ 150 °C at full power on standard PCB.

Pinout & Package

NSVBC856BM3T5G is housed in the SOT-723 surface-mount package (1.20 × 0.80 × 0.50 mm, 0.40 mm pitch), optimized for space-constrained automotive and portable electronics layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased PNP operation; requires negative current relative to emitter to turn on device.
2	Emitter	Current source terminal in PNP configuration; connected to higher potential rail in high-side switch or current mirror top leg.
3	Collector	Current sink terminal; output node for amplification or switching; polarity must remain negative relative to emitter during operation.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood and cabin environments per stress testing protocol, enabling use in ASIL-B supporting subsystems without additional qualification.
Pb-free, halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, eliminating hazardous substances for eco-compliant manufacturing and end-of-life handling.
SOT-723 footprint	0.40 mm lead pitch enables high-density placement in compact modules such as body control units and sensor interface boards.
−55 °C to +150 °C T_J	Extended junction temperature range supports reliable operation in engine bay, powertrain, and industrial control enclosures without derating.

Applications

Automotive Door Module	Industrial Sensor Bias Network
Use Scenario: Driving LED status indicators and relays in door control units subject to vibration and thermal cycling. IC Role / Device Role / Timing Role: PNP switch controlling 12 V loads with base driven by microcontroller GPIO through current-limiting resistor. Use Value: V_CEO = −65 V withstands load dump transients; V_CE(sat) ≤ −0.65 V ensures < 65 mW conduction loss at 100 mA, reducing thermal stress in sealed modules.	Use Scenario: Providing stable bias current to bridge-based pressure or temperature sensors in factory automation equipment. IC Role / Device Role / Timing Role: Constant-current source configured with emitter resistor, leveraging h_FE stability over temperature to minimize sensor offset drift. Use Value: h_FE variation < ±15% from −40 °C to +125 °C (per typical curves) maintains sensor excitation accuracy within ±0.5% full scale.
Portable Medical Monitor Front-End	Consumer Audio Signal Amplifier
Use Scenario: Level-shifting and buffering ECG electrode signals prior to ADC sampling in battery-powered patient monitors. IC Role / Device Role / Timing Role: Common-emitter amplifier stage with fixed bias, operating in linear region to preserve signal fidelity below 1 kHz. Use Value: NF = 10 dB at 1 kHz ensures minimal added noise in sub-μV biopotential acquisition; low C_obo = 4.5 pF avoids high-frequency roll-off in active filters.	Use Scenario: Implementing tone-control circuitry and headphone driver pre-amplification in compact Bluetooth speakers. IC Role / Device Role / Timing Role: Discrete gain stage in active bass/treble network, biased for Class-A operation to minimize harmonic distortion. Use Value: f_T = 100 MHz provides > 20× bandwidth margin at 20 kHz audio band, ensuring flat gain response and phase linearity up to 100 kHz.

Automotive Door Module

Industrial Sensor Bias Network

Use Scenario: Driving LED status indicators and relays in door control units subject to vibration and thermal cycling.

IC Role / Device Role / Timing Role: PNP switch controlling 12 V loads with base driven by microcontroller GPIO through current-limiting resistor.

Use Value: V_CEO = −65 V withstands load dump transients; V_CE(sat) ≤ −0.65 V ensures < 65 mW conduction loss at 100 mA, reducing thermal stress in sealed modules.

Use Scenario: Providing stable bias current to bridge-based pressure or temperature sensors in factory automation equipment.

IC Role / Device Role / Timing Role: Constant-current source configured with emitter resistor, leveraging h_FE stability over temperature to minimize sensor offset drift.

Use Value: h_FE variation < ±15% from −40 °C to +125 °C (per typical curves) maintains sensor excitation accuracy within ±0.5% full scale.

Portable Medical Monitor Front-End

Consumer Audio Signal Amplifier

Use Scenario: Level-shifting and buffering ECG electrode signals prior to ADC sampling in battery-powered patient monitors.

IC Role / Device Role / Timing Role: Common-emitter amplifier stage with fixed bias, operating in linear region to preserve signal fidelity below 1 kHz.

Use Value: NF = 10 dB at 1 kHz ensures minimal added noise in sub-μV biopotential acquisition; low C_obo = 4.5 pF avoids high-frequency roll-off in active filters.

Use Scenario: Implementing tone-control circuitry and headphone driver pre-amplification in compact Bluetooth speakers.

IC Role / Device Role / Timing Role: Discrete gain stage in active bass/treble network, biased for Class-A operation to minimize harmonic distortion.

Use Value: f_T = 100 MHz provides > 20× bandwidth margin at 20 kHz audio band, ensuring flat gain response and phase linearity up to 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC856BMTF	Same die, SOT-23 package (3.0 × 1.4 × 1.1 mm); R_JA = 350 °C/W (FR-5); 3000 pcs/reel packaging.	Larger footprint limits use in ultra-dense layouts; higher thermal resistance requires larger copper pour for same power handling.	Select when legacy SOT-23 assembly lines or existing footprints prevent SOT-723 adoption.
PN2907A	TO-92 through-hole; V_CEO = −60 V; h_FE = 100–300; no AEC-Q101 qualification; PD = 625 mW.	Not suitable for automated SMT production or automotive vibration environments; lacks extended temperature validation.	Choose only for prototyping, low-volume non-automotive designs where manual assembly and cost sensitivity outweigh reliability needs.

Compared with BC856BMTF and PN2907A, NSVBC856BM3T5G offers the smallest footprint and automotive-grade reliability, but requires requalification of solder paste profile and stencil design due to SOT-723's fine pitch and thermal mass differences.

Availability

NSVBC856BM3T5G is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and portable medical devices requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for NSVBC856BM3T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The BC856B series belongs to onsemi's general-purpose bipolar transistor portfolio, designed specifically for cost-sensitive, high-reliability signal amplification and switching in automotive and industrial systems.

FAQ

What is the maximum junction temperature rating for NSVBC856BM3T5G?

The NSVBC856BM3T5G has a specified junction and storage temperature range of −55 °C to +150 °C. This rating is validated per AEC-Q101 stress tests and applies under all operating conditions defined in the datasheet, including maximum power dissipation on FR-5 or alumina substrates. Designers must ensure thermal design keeps actual T_J within this window using the provided R_JA values.

Is NSVBC856BM3T5G pin-compatible with standard BC856B variants in SOT-23?

No, NSVBC856BM3T5G uses the SOT-723 package with 0.40 mm pitch and different pin assignment (1=Base, 2=Emitter, 3=Collector), whereas SOT-23 BC856B variants use 0.95 mm pitch and reversed pinout (1=Emitter, 2=Base, 3=Collector). Direct PCB replacement is not possible without layout revision.

Does NSVBC856BM3T5G meet automotive qualification standards?

Yes, NSVBC856BM3T5G is explicitly AEC-Q101 qualified and PPAP capable, as confirmed in the official onsemi datasheet. The "NSV" prefix denotes compliance with automotive-specific site and change control requirements, making it suitable for production use in automotive electronic control units.

What is the typical noise figure of NSVBC856BM3T5G and at what conditions is it measured?

The NSVBC856BM3T5G has a typical noise figure of 10 dB, measured at I_C = −0.2 mA, V_CE = −5.0 V, source resistance R_S = 2.0 kΩ, frequency f = 1.0 kHz, and bandwidth BW = 200 Hz. This value reflects its suitability for low-noise pre-amplification in biopotential and sensor front-end applications.

Can NSVBC856BM3T5G be used in switching applications, and what is its saturation voltage?

Yes, NSVBC856BM3T5G is suitable for switching applications. Its V_CE(sat) is ≤ −0.65 V at I_C = −100 mA and I_B = −5.0 mA, confirming robust saturation behavior. At lower currents (I_C = −10 mA, I_B = −0.5 mA), V_CE(sat) drops to ≤ −0.3 V, enabling efficient low-power digital logic interfacing and relay driving.

NSVBC856BM3T5G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SOT-723

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 65 V

Vce Saturation (Max) @ Ib, Ic:: 650mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 220 @ 2mA, 5V

Power - Max:: 265 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-723

NSVBC856BM3T5G FAQ

1.How can I place an order for NSVBC856BM3T5G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSVBC856BM3T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSVBC856BM3T5G reliable?

The price and inventory of NSVBC856BM3T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBC856BM3T5G is usually 5 days.

3.What payment methods are accepted for NSVBC856BM3T5G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBC856BM3T5G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSVBC856BM3T5G?

NSVBC856BM3T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSVBC856BM3T5G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSVBC856BM3T5G?

For technical support, including NSVBC856BM3T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBC856BM3T5G requirements.

6.How does Aetrix verify that NSVBC856BM3T5G is sourced from the original manufacturer or authorized distributors?

All NSVBC856BM3T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBC856BM3T5G meets industry standards.

7.What is the process for return or replacement of NSVBC856BM3T5G?

All NSVBC856BM3T5G units undergo pre-shipment inspection (PSI). If there is an issue with NSVBC856BM3T5G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSVBC856BM3T5G part is unused and in its original packaging.

Return procedure for NSVBC856BM3T5G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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