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onsemi NSVBC858AWT1G
- Part No.:
- NSVBC858AWT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
NSVBC858AWT1G.pdf
- Description:
- TRANS PNP 30V 0.1A SC70
- Quantity:
- Payment:
- Shipping:
Inventory:156,000
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Product details
Overview
NSVBC858AWT1G from onsemi is a PNP silicon general-purpose transistor in SC−70/SOT−323 package, rated for −30 V VCEO, −100 mA IC, and 150 mW power dissipation, used in low-power amplifier and switching circuits in automotive and industrial control modules.
For engineers reviewing the NSVBC858AWT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC−Q101 qualification, −30 V collector-emitter breakdown, hFE range of 125–250 at −10 mA/−5 V, and SOT−323 thermal performance with RJA = 883 °C/W.
Technical Context
This device operates as a discrete PNP bipolar junction transistor optimized for linear amplification and saturated switching in space-constrained surface-mount designs. Its electrical behavior is defined by VCEO = −30 V, VBE(sat) = −0.7 V (at −10 mA/−0.5 mA), and fT = 100 MHz - enabling stable gain in audio preamps and logic-level translation.
The NSVBC858AWT1G belongs to the BC858A variant group within the BC856/857/858 family, distinguished by its lower voltage rating versus BC856B/BC857B and tighter hFE binning (125–250). It shares the SC−70 mechanical outline and marking code "3J", and is qualified per AEC−Q101 for automotive use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −30 V - maximum allowable collector-emitter voltage before breakdown in open-base condition; sets upper rail limit for biasing in 24 V automotive systems. |
| IC (cont.) | −100 mA - continuous DC collector current handling; supports signal-level switching in sensor interface and LED driver stages. |
| hFE | 125–250 @ −10 mA, −5 V - DC current gain range defining small-signal amplification capability and base drive requirements. |
| VCE(sat) | −0.3 V @ −10 mA/−0.5 mA - low saturation voltage enables efficient switching with minimal conduction loss in active-low logic gates. |
| fT | 100 MHz - transition frequency confirming usable bandwidth up to mid-VHF for RF detector or oscillator buffer applications. |
| PD | 150 mW @ TA = 25 °C - thermal power limit on FR-5 board; requires derating above 25 °C per RJA = 883 °C/W. |
| Cob | 4.5 pF @ −10 V - output capacitance affecting high-frequency response and stability in tuned amplifier stages. |
Pinout & Package
NSVBC858AWT1G uses the SC−70/SOT−323 package (Case 419, Style 3), a 3-pin surface-mount plastic package measuring 2.2 mm × 1.35 mm × 1.0 mm, optimized for automated placement and low thermal resistance in dense PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to turn on. |
| 2 | Emiter | Current source terminal in PNP configuration; connected to higher potential rail (e.g., VCC) in common-emitter amplifier topologies. |
| 3 | Collector | Current sink terminal; delivers amplified or switched output current to load referenced to ground or lower potential. |
Key Features
| Feature | Design Value |
|---|---|
| AEC−Q101 qualified | Validated for automotive temperature cycling, humidity, and mechanical stress; supports deployment in engine control units and body electronics without additional qualification. |
| Pb−Free, Halogen Free/BFR Free | Complies with RoHS Directive 2011/65/EU and JESD204; eliminates hazardous substances for environmentally compliant manufacturing and end-of-life processing. |
| SC−70/SOT−323 footprint | Enables high-density PCB layout with 0.65 mm pin pitch; compatible with standard reflow profiles and AOI inspection systems. |
| −55 °C to +150 °C operating range | Supports operation in under-hood automotive environments and industrial enclosures without thermal derating below −40 °C or above +125 °C. |
Applications
| Automotive Door Module | Industrial Sensor Interface |
|---|---|
Use Scenario: Driving window lift motor relays and LED status indicators in door control units. IC Role / Device Role / Timing Role: PNP switch controlling 12 V loads via microcontroller GPIO with inverted logic level. Use Value: Low VCE(sat) minimizes heat generation during sustained relay coil activation; AEC−Q101 ensures reliability over 15-year vehicle lifetime. | Use Scenario: Level-shifting analog sensor outputs (e.g., thermistor bridges) into ADC inputs of PLC I/O modules. IC Role / Device Role / Timing Role: Emitter-follower buffer providing impedance isolation and rail-to-rail swing capability. Use Value: Stable hFE across −40 °C to +85 °C maintains gain accuracy; low Cob prevents signal distortion at 10 kHz sampling rates. |
| Consumer Audio Preamp | Medical Infusion Pump Control |
Use Scenario: First-stage amplification of electret microphone signals in portable hearing aids and voice recorders. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with fixed bias network and emitter degeneration. Use Value: 100 MHz fT preserves audio fidelity up to 20 kHz; low noise figure (NF ≤ 10 dB) avoids audible hiss in battery-powered devices. | Use Scenario: Isolating microcontroller outputs from solenoid valve drivers in Class II medical infusion pumps. IC Role / Device Role / Timing Role: High-reliability saturated switch enabling fail-safe valve deactivation on fault detection. Use Value: −30 V VCEO margin accommodates back-EMF spikes; extended TJ range ensures operation during sterilization cycles up to +135 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC858BWT1G | Higher hFE bin (220–475 vs. 125–250); identical VCEO, package, and thermal specs. | Suitable where higher current gain reduces base drive burden; not recommended if tight hFE tolerance is required for matched pair biasing. | Select BC858BWT1G when designing for minimum base current consumption in battery-critical systems. |
| NSVBC857CWT1G | Lower VCEO (−45 V), higher hFE (270–520), same package and AEC−Q101 qualification. | Better suited for 36 V industrial bus interfaces requiring wider voltage headroom and higher gain stability at low currents. | Choose NSVBC857CWT1G when interfacing with 24 V PLC backplanes where −45 V rating improves safety margin. |
Compared with BC858BWT1G and NSVBC857CWT1G, the NSVBC858AWT1G offers the narrowest hFE spread and lowest VCEO, making it optimal for cost-sensitive, low-voltage automotive switches where predictable turn-on threshold and thermal efficiency are prioritized over gain variability.
Availability
NSVBC858AWT1G is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor signal conditioning, and consumer audio front-end circuits requiring stable component supply, AEC−Q101 compliance, and SOT−323 footprint consistency.
Supply support for NSVBC858AWT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The BC856/857/858 family - including NSVBC858AWT1G - was designed for robust, low-cost general-purpose amplification and switching in space-constrained automotive and industrial PCBs, emphasizing AEC−Q101 reliability and Pb−free manufacturability.
FAQ
What is the maximum collector-emitter voltage rating for NSVBC858AWT1G?
The NSVBC858AWT1G has a maximum collector-emitter voltage (VCEO) rating of −30 V at TA = 25 °C. This rating applies under open-base conditions and defines the absolute upper limit for safe DC biasing in circuits such as automotive load switches and sensor buffers. Exceeding this voltage risks avalanche breakdown and permanent device damage.
Is NSVBC858AWT1G qualified for automotive applications?
Yes, NSVBC858AWT1G carries the NSV prefix indicating AEC−Q101 qualification and PPAP capability. It has undergone stress testing for temperature cycling, humidity, mechanical shock, and ESD per automotive standards, making it suitable for under-hood and cabin electronics including door modules and lighting controllers.
What is the DC current gain (hFE) range of NSVBC858AWT1G at typical operating conditions?
The NSVBC858AWT1G exhibits an hFE range of 125 to 250 when tested at IC = −10 mA and VCE = −5.0 V. This binning reflects the "A" suffix variant and provides predictable base drive requirements for amplifier bias networks and digital switching applications without requiring gain compensation circuitry.
What package type does NSVBC858AWT1G use, and what are its key mechanical dimensions?
NSVBC858AWT1G uses the SC−70/SOT−323 package (Case 419, Style 3), measuring 2.2 mm × 1.35 mm × 1.0 mm with 0.65 mm pin pitch. Its compact size supports high-density routing on 4-layer automotive PCBs, and the molded plastic body ensures compatibility with lead-free reflow soldering profiles up to 260 °C peak temperature.
Does NSVBC858AWT1G meet RoHS and halogen-free requirements?
Yes, NSVBC858AWT1G is Pb−Free, Halogen Free/BFR Free, and fully RoHS compliant per Directive 2011/65/EU. The device contains no lead, brominated flame retardants, or chlorine-based halogens above threshold limits, satisfying environmental compliance mandates for global electronics manufacturing and end-of-life recycling.
NSVBC858AWT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 125 @ 2mA, 5V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70 (SOT323)
NSVBC858AWT1G FAQ
1.How can I place an order for NSVBC858AWT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSVBC858AWT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSVBC858AWT1G reliable?
The price and inventory of NSVBC858AWT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBC858AWT1G is usually 5 days.
3.What payment methods are accepted for NSVBC858AWT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBC858AWT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSVBC858AWT1G?
NSVBC858AWT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSVBC858AWT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSVBC858AWT1G?
For technical support, including NSVBC858AWT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBC858AWT1G requirements.
6.How does Aetrix verify that NSVBC858AWT1G is sourced from the original manufacturer or authorized distributors?
All NSVBC858AWT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBC858AWT1G meets industry standards.
7.What is the process for return or replacement of NSVBC858AWT1G?
All NSVBC858AWT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSVBC858AWT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSVBC858AWT1G part is unused and in its original packaging.
Return procedure for NSVBC858AWT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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