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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSVBCH807-25LT1G

Name: NSVBCH807-25LT1G
Brand: onsemi
SKU: NSVBCH807-25LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSVBCH807-25LT1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: NSVBCH807-25LT1G.pdf

Description:: TRANS PNP 45V 0.5A SOT23-3

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Product details

Overview

NSVBCH807-25LT1G from onsemi is a PNP silicon general-purpose transistor rated for −45 V V_CEO, −500 mA I_C, and 175 °C T_J(max), optimized for automotive load switching, power management, and high-reliability industrial control circuits.

For engineers reviewing the NSVBCH807-25LT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, h_FE = 160–400 at I_C = −100 mA, V_CE(sat) ≤ −0.7 V at I_C = −500 mA/−50 mA, and SOT-23 package thermal performance on FR-4 and alumina substrates.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor with fixed emitter-base and collector-base breakdown limits (V_(BR)EBO = −5.0 V, V_(BR)CBO = −50 V), supporting linear amplification and saturated switching in low-voltage DC circuits up to 45 V.

Its f_T = 100 MHz enables use in moderate-frequency signal conditioning and pulse-width modulation drivers, while its R_JA = 400 °C/W (FR-4) and 330 °C/W (alumina) defines thermal design boundaries for continuous operation under ambient temperatures up to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V - Maximum collector-emitter voltage before breakdown; sets upper rail limit for 36 V automotive and 24 V industrial supply rails.
I_C (continuous)	−500 mA - Continuous collector current rating; supports loads such as LED arrays, relay coils, and small solenoids without forced cooling.
h_FE	160–400 - DC current gain at I_C = −100 mA/V_CE = −1 V; ensures stable base drive sizing across temperature (−55 °C to +175 °C).
V_CE(sat)	≤ −0.7 V - Saturation voltage at I_C = −500 mA/I_B = −50 mA; minimizes conduction loss and self-heating in switching applications.
T_J(max)	+175 °C - Maximum junction temperature; enables operation in under-hood automotive environments and sealed industrial enclosures.
C_obo	10 pF - Output capacitance at V_CB = −10 V/f = 1 MHz; constrains high-frequency response and switching speed in PWM gate drivers.

Pinout & Package

SOT-23 (TO-236) package, 2.90 × 1.30 × 1.00 mm, 3-pin surface-mount outline per Case 318 Style 6.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires series resistor to limit I_B and ensure saturation at target I_C.
2	Emiter	Common terminal for PNP configuration; connects to higher-potential rail (e.g., battery +12 V) in high-side switch topologies.
3	Collector	Output terminal sourcing current to load; ties to load return path (e.g., ground or low-side switch) in standard configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - required for engine control, body electronics, and ADAS subsystems.
NSV prefix	Indicates dedicated automotive production site and enhanced change control - ensures traceability and PPAP compliance for OEM Tier 1 suppliers.
175 °C T_J(max)	Enables uninterrupted operation in high-ambient environments (e.g., near power converters or exhaust manifolds) without derating below full I_C.
Pb-free, RoHS compliant	Meets EU Directive 2011/65/EU and JESD204B process requirements - eliminates lead-based solder compatibility concerns in modern reflow profiles.
Low V_CE(sat)	Reduces power dissipation to ≤350 mW at I_C = −500 mA, allowing use on standard FR-4 PCBs without heatsinking in space-constrained modules.

Applications

Automotive Body Control Module	Industrial PLC Output Stage
Use Scenario: Driving 12 V incandescent lamps, door lock actuators, and HVAC blower relays in BCM subassemblies. IC Role / Device Role / Timing Role: High-side PNP switch controlling load current between battery rail and grounded load. Use Value: AEC-Q101 qualification and 175 °C rating ensure functional safety compliance and long-term reliability in vehicle cabin and under-dash locations.	Use Scenario: Isolating microcontroller GPIO outputs from 24 V DC solenoid valves and indicator LEDs in DIN-rail mounted controllers. IC Role / Device Role / Timing Role: Level-shifting interface transistor providing galvanic separation and current gain for logic-level signals. Use Value: V_CEO = −45 V and h_FE ≥ 160 allow robust drive of inductive loads with minimal base drive overhead and no external flyback diode needed in many cases.
Power Supply Enable Circuit	LED Current Sink Driver
Use Scenario: Enabling/disabling secondary DC-DC converter rails in multi-output power supplies for telecom and test equipment. IC Role / Device Role / Timing Role: Low-loss pass element in enable path, configured as emitter-follower to translate 3.3 V/5 V logic to higher-voltage control lines. Use Value: V_CE(sat) ≤ −0.7 V ensures <100 mV dropout at 500 mA, preserving regulation margin and minimizing thermal stress during sustained enable states.	Use Scenario: Constant-current sinking for high-brightness white LEDs in signage and instrumentation backlighting. IC Role / Device Role / Timing Role: Linear current regulator using feedback from emitter resistor to maintain stable LED brightness over temperature. Use Value: Tight h_FE distribution (160–400) and low V_BE(on) = −1.2 V support accurate current setting with ±5% tolerance resistors and minimal thermal drift.

Automotive Body Control Module

Industrial PLC Output Stage

Use Scenario: Driving 12 V incandescent lamps, door lock actuators, and HVAC blower relays in BCM subassemblies.

IC Role / Device Role / Timing Role: High-side PNP switch controlling load current between battery rail and grounded load.

Use Value: AEC-Q101 qualification and 175 °C rating ensure functional safety compliance and long-term reliability in vehicle cabin and under-dash locations.

Use Scenario: Isolating microcontroller GPIO outputs from 24 V DC solenoid valves and indicator LEDs in DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: Level-shifting interface transistor providing galvanic separation and current gain for logic-level signals.

Use Value: V_CEO = −45 V and h_FE ≥ 160 allow robust drive of inductive loads with minimal base drive overhead and no external flyback diode needed in many cases.

Power Supply Enable Circuit

LED Current Sink Driver

Use Scenario: Enabling/disabling secondary DC-DC converter rails in multi-output power supplies for telecom and test equipment.

IC Role / Device Role / Timing Role: Low-loss pass element in enable path, configured as emitter-follower to translate 3.3 V/5 V logic to higher-voltage control lines.

Use Value: V_CE(sat) ≤ −0.7 V ensures <100 mV dropout at 500 mA, preserving regulation margin and minimizing thermal stress during sustained enable states.

Use Scenario: Constant-current sinking for high-brightness white LEDs in signage and instrumentation backlighting.

IC Role / Device Role / Timing Role: Linear current regulator using feedback from emitter resistor to maintain stable LED brightness over temperature.

Use Value: Tight h_FE distribution (160–400) and low V_BE(on) = −1.2 V support accurate current setting with ±5% tolerance resistors and minimal thermal drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSVBCH807-16LT1G	Lower h_FE range (100–250); identical V_CEO, I_C, and thermal specs.	Better suited for cost-sensitive, lower-gain switching where base drive current is less constrained.	Select when design tolerates higher base current or tighter h_FE variation is acceptable.
NSVBCH807-40LT1G	Higher h_FE range (250–600); same voltage/current/thermal ratings.	Preferred for ultra-low-base-drive applications like battery-powered sensors or low-power MCU interfaces.	Choose when minimizing base current consumption or maximizing noise immunity in weak-signal environments is critical.

Compared with NSVBCH807-16LT1G and NSVBCH807-40LT1G, the NSVBCH807-25LT1G offers balanced h_FE performance ideal for general-purpose automotive and industrial switching where predictable base drive and moderate gain stability are prioritized over extreme low-current or high-current edge cases.

Availability

NSVBCH807-25LT1G is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, and power supply enable circuits requiring stable component supply and AEC-Q101 assurance.

Supply support for NSVBCH807-25LT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The BCH807 family delivers high-temperature, AEC-Q101-qualified PNP transistors designed specifically for mission-critical automotive and industrial switching where reliability, thermal resilience, and process traceability are mandatory.

FAQ

What is the maximum operating temperature for NSVBCH807-25LT1G?

The NSVBCH807-25LT1G has a maximum junction temperature (T_J(max)) of +175 °C, validated per AEC-Q101 stress testing. This allows continuous operation in under-hood automotive environments and sealed industrial enclosures without thermal derating below its rated −500 mA collector current, provided PCB thermal design meets the specified R_JA limits.

Is NSVBCH807-25LT1G pin-compatible with other BCH807 variants?

Yes, NSVBCH807-25LT1G shares identical SOT-23 (Case 318 Style 6) pinout - Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector - with NSVBCH807-16LT1G and NSVBCH807-40LT1G. All variants use the same footprint, thermal pad layout, and mechanical dimensions, enabling drop-in replacement within the same family when electrical parameters align with circuit requirements.

Does NSVBCH807-25LT1G require an external flyback diode when driving inductive loads?

While NSVBCH807-25LT1G is not internally clamped, its V_(BR)CES = −50 V provides sufficient reverse breakdown margin for typical 12 V or 24 V inductive loads switched at moderate frequencies. An external flyback diode is recommended for high-energy solenoids or fast-switching PWM applications to prevent voltage overshoot exceeding −50 V and ensure long-term reliability.

What does the "NSV" prefix indicate for NSVBCH807-25LT1G?

The "NSV" prefix on NSVBCH807-25LT1G denotes onsemi's automotive-specific product line: it signifies dedicated manufacturing site control, enhanced change management, full PPAP documentation support, and AEC-Q101 qualification - all required for Tier 1 automotive supply chain compliance and traceability in safety-critical systems.

How does the h_FE range of NSVBCH807-25LT1G compare to standard BC807 devices?

NSVBCH807-25LT1G specifies h_FE = 160–400 at I_C = −100 mA/V_CE = −1 V, which is higher and tighter than generic BC807-25 variants (typically 160–320). This extended upper bound improves base drive margin in noisy or thermally varying environments and supports more consistent turn-on behavior across automotive temperature ranges (−40 °C to +150 °C).

NSVBCH807-25LT1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 160 @ 100mA, 1V

Power - Max:: 225 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

NSVBCH807-25LT1G FAQ

1.How can I place an order for NSVBCH807-25LT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSVBCH807-25LT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSVBCH807-25LT1G reliable?

The price and inventory of NSVBCH807-25LT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBCH807-25LT1G is usually 5 days.

3.What payment methods are accepted for NSVBCH807-25LT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBCH807-25LT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSVBCH807-25LT1G?

NSVBCH807-25LT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSVBCH807-25LT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSVBCH807-25LT1G?

For technical support, including NSVBCH807-25LT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBCH807-25LT1G requirements.

6.How does Aetrix verify that NSVBCH807-25LT1G is sourced from the original manufacturer or authorized distributors?

All NSVBCH807-25LT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBCH807-25LT1G meets industry standards.

7.What is the process for return or replacement of NSVBCH807-25LT1G?

All NSVBCH807-25LT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSVBCH807-25LT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSVBCH807-25LT1G part is unused and in its original packaging.

Return procedure for NSVBCH807-25LT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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