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onsemi NSVBCP56MTWG

Part No.:
NSVBCP56MTWG
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
3-WDFN Exposed Pad
Datasheet:
AetrixNSVBCP56MTWG.pdf
Description:
TRANS NPN 80V 1A 3WDFNW
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,438

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Product details

Overview

NSVBCP56MTWG from onsemi is an automotive-grade NPN general-purpose transistor in a wettable flank DFN2020-3 (WDFNW3) package, rated for 80 V VCEO, 1 A continuous collector current, and 1.5 W power dissipation on 600 mm² PCB copper. It delivers hFE = 63–250 (depending on IC), fT = 140 MHz, and VCE(sat) ≤ 0.50 V at IC = 500 mA / IB = 50 mA. It is used in medium-power automotive amplifier and switching stages where thermal reliability and AOI-compatible mounting are critical.

For engineers reviewing the NSVBCP56MTWG datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, wettable flank package for solder-joint inspection, 80 V breakdown rating, 140 MHz fT, and dual thermal performance profiles (78 °C/W and 138 °C/W RJA) dependent on PCB pad area.

Technical Context

The NSVBCP56MTWG is a silicon NPN bipolar junction transistor optimized for surface-mount medium-power linear amplification and switching. Its design emphasizes thermal robustness via the WDFNW3 package's exposed drain pad and low RJA (78 °C/W with 600 mm² copper), while maintaining high-frequency capability (fT = 140 MHz) and low saturation voltage (VCE(sat) ≤ 0.50 V).

It supports automotive applications through NSV prefixing, AEC-Q101 qualification, PPAP capability, and operation across −65 °C to +150 °C junction temperature. Electrical behavior is characterized by three hFE bins (63, 100, 160 min), defined at distinct IC points (5 mA, 150 mA, 500 mA), and validated under pulsed conditions (300 µs, ≤2% duty cycle) per JEDEC standards.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO80 V - Supports rail voltages up to 60 V DC with 33% safety margin in automotive 42 V systems
IC (continuous)1.0 A - Enables drive of medium-current loads such as relay coils, LED strings, or pre-driver stages
fT140 MHz - Sufficient for audio amplification and low-MHz switching control loops
VCE(sat)≤ 0.50 V @ IC/IB = 10 - Minimizes conduction loss and self-heating in saturated-switching mode
RJA (600 mm²)78 °C/W - Allows 1.5 W continuous dissipation at TA = 25 °C without heatsink
AEC-Q101Qualified - Meets stress-test requirements for automotive electronics including HTOL, TC, HTRB
PackageWDFNW3 (2.0 × 2.0 × 0.75 mm) - Wettable flank geometry enables automated optical inspection of solder fillets

Pinout & Package

The NSVBCP56MTWG uses the WDFNW3 (Case 515AA) 3-pin DFN package with an exposed thermal pad. Pin 1 is Base, Pin 2 is Emitter, Pin 3 is Collector - confirmed by onsemi marking diagram and mechanical outline.

Pin/TerminalCircuit RoleDesign Meaning
1 (Base)Control input terminalReceives base current to bias transistor into active or saturation region; requires current-limiting resistor in series
2 (Emitter)Current return pathConnected to ground or low-side reference; forms common-emitter configuration with collector load
3 (Collector)Output current terminalSinks load current; connected to positive rail via load (e.g., relay coil, LED string, or next-stage input)

Key Features

FeatureDesign Value
Wettable flank packageEnables 100% AOI coverage of solder joints on all three side terminals, improving manufacturing yield in automotive SMT lines
AEC-Q101 qualificationValidated for automotive underhood and cabin environments, including temperature cycling, humidity, and long-term bias stress
NSV prefixIndicates dedicated production traceability, change control, and PPAP documentation support for Tier-1 automotive customers
Dual thermal ratingsSupports flexible layout: 78 °C/W (600 mm² pad) for high-power use, 138 °C/W (100 mm² pad) for space-constrained modules
Pb-free, Halogen-freeComplies with RoHS Directive 2011/65/EU and JESD204B material content requirements for automotive electronics

Applications

Automotive Body Control Module (BCM)Industrial Relay Driver Stage

Use Scenario: Driving 12 V/24 V electromagnetic relays in door lock, window lift, or lighting control circuits within BCM assemblies.

IC Role / Device Role / Timing Role: Medium-power NPN switch operating in saturation to sink relay coil current (≤800 mA) with minimal VCE(sat).

Use Value: Low 0.50 V saturation voltage reduces power loss and thermal rise in densely packed BCM PCBs, while AEC-Q101 ensures field reliability over 15-year vehicle life.

Use Scenario: Controlling industrial solenoid valves and contactors in PLC I/O modules requiring 1 A switching capability at 24–48 V DC.

IC Role / Device Role / Timing Role: General-purpose NPN transistor configured as a grounded-emitter switch with external base resistor network.

Use Value: 80 V VCEO provides headroom above 48 V nominal rails, and 1.5 W power rating allows sustained operation without forced air cooling.

Automotive HVAC Blower ControlLED Driver for Interior Lighting

Use Scenario: PWM-controlled blower motor driver stage in climate control units, interfacing between MCU GPIO and MOSFET gate driver IC.

IC Role / Device Role / Timing Role: Pre-driver transistor amplifying MCU output to deliver ≥50 mA base current to downstream power device.

Use Value: 140 MHz fT ensures faithful reproduction of 20 kHz PWM signals without phase lag or distortion, supporting smooth fan speed transitions.

Use Scenario: Constant-current switching element for segmented interior LED arrays (e.g., ambient lighting strips, dashboard backlighting).

IC Role / Device Role / Timing Role: Linear or switched-mode current sink regulating LED string current up to 1 A.

Use Value: Tight hFE binning (63–250) and low VBE(on) (≤1.0 V) enable predictable current-setting with minimal sense-resistor tolerance impact.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BCP56MTWGSame die, non-automotive grade; no NSV prefix or AEC-Q101 qualificationNot approved for automotive production; suitable for industrial prototypes or cost-sensitive consumer designsSelect when AEC-Q101 compliance is not required and full traceability is unnecessary
NSVBCP5610MTWGSame package and ratings, but higher hFE bin (min 100 @ IC = 150 mA) and different marking (6N)Better suited for low-base-drive applications where IB budget is constrained (e.g., direct MCU GPIO drive)Select when higher DC gain is needed to reduce base resistor power loss or simplify drive circuitry

Compared with BCP56MTWG and NSVBCP5610MTWG, the NSVBCP56MTWG offers the baseline hFE bin (63 min @ 5 mA) with full automotive qualification-making it optimal for cost-sensitive yet safety-critical body electronics where consistent gain at low currents matters more than maximum gain.

Availability

NSVBCP56MTWG is available at Aetrix Electronics and suitable for automotive body control modules, industrial relay drivers, HVAC blower pre-drivers, and interior LED lighting systems requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for NSVBCP56MTWG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The BCP56M family-including NSVBCP56MTWG-is designed specifically for automotive and industrial medium-power linear and switching applications where thermal reliability, manufacturability, and qualification rigor are mandatory.

FAQ

What is the maximum continuous collector current rating for NSVBCP56MTWG?

The NSVBCP56MTWG has a maximum continuous collector current (IC) rating of 1.0 A at TA = 25 °C with a 600 mm² copper pad. This rating decreases with rising ambient temperature due to thermal derating-specifically, 12.8 mW/°C above 25 °C. At 100 °C ambient, the usable IC drops to approximately 0.6 A. The NSVBCP56MTWG datasheet specifies this limit under JEDEC test conditions using FR4 board and 2 oz copper.

Is NSVBCP56MTWG pin-compatible with BCP56MTWG?

Yes, NSVBCP56MTWG is pin-compatible with BCP56MTWG: both use the identical WDFNW3 (2.0 × 2.0 mm) package with Base–Emitter–Collector pinout (1–2–3). They share identical mechanical dimensions, thermal pad layout, and solder footprint. However, NSVBCP56MTWG adds automotive-specific process controls, AEC-Q101 qualification, and NSV prefix traceability-while electrical parameters remain fully aligned per datasheet specifications.

What does the "NSV" prefix indicate on NSVBCP56MTWG?

The "NSV" prefix on NSVBCP56MTWG denotes a dedicated manufacturing flow for automotive and other high-reliability applications requiring unique site control, enhanced change management, and full PPAP documentation support. It confirms that the NSVBCP56MTWG lot is produced under automotive-specific quality systems, with extended reliability testing and traceability down to wafer level-distinct from standard BCP56MTWG lots which lack these controls.

Does NSVBCP56MTWG support automated optical inspection (AOI)?

Yes, NSVBCP56MTWG features a wettable flank package (WDFNW3) engineered for full AOI compatibility. The vertical sidewalls of Pins 1–3 are metallized to form visible solder fillets during reflow, enabling machine vision systems to inspect solder joint integrity with >99% detection accuracy. This capability is explicitly validated in onsemi's packaging specification and is critical for zero-defect automotive assembly lines.

What is the typical transition frequency (fT) of NSVBCP56MTWG and how is it measured?

The typical transition frequency (fT) of NSVBCP56MTWG is 140 MHz, measured under standardized small-signal conditions: IC = 10 mA, VCE = 5.0 V, and f = 100 MHz. This parameter reflects the frequency at which the transistor's short-circuit current gain drops to unity and directly informs its suitability for audio amplification, PWM pre-driving, and signal buffering up to ~20 MHz. The value is confirmed in the "Small Signal Characteristics" table of the official onsemi datasheet.

NSVBCP56MTWG Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
3-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
63 @ 150mA, 2V
Power - Max:
1.5 W
Frequency - Transition:
140MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
3-WDFNW (2x2)

NSVBCP56MTWG FAQ

1.How can I place an order for NSVBCP56MTWG through Aetrix?

Please submit a Request for Quotation (RFQ) for NSVBCP56MTWG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSVBCP56MTWG reliable?

The price and inventory of NSVBCP56MTWG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBCP56MTWG is usually 5 days.

3.What payment methods are accepted for NSVBCP56MTWG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBCP56MTWG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSVBCP56MTWG?

NSVBCP56MTWG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSVBCP56MTWG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSVBCP56MTWG?

For technical support, including NSVBCP56MTWG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBCP56MTWG requirements.

6.How does Aetrix verify that NSVBCP56MTWG is sourced from the original manufacturer or authorized distributors?

All NSVBCP56MTWG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBCP56MTWG meets industry standards.

7.What is the process for return or replacement of NSVBCP56MTWG?

All NSVBCP56MTWG units undergo pre-shipment inspection (PSI). If there is an issue with NSVBCP56MTWG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSVBCP56MTWG part is unused and in its original packaging.

Return procedure for NSVBCP56MTWG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NSVBCP56MTWG Tags

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