My Inquiry
My Account
onsemi NSVBCX17LT1G
- Part No.:
- NSVBCX17LT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NSVBCX17LT1G.pdf
- Description:
- TRANS PNP 45V 0.5A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:331
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSVBCX17LT1G from onsemi is a PNP general-purpose bipolar junction transistor in SOT-23 package, rated for −45 V VCEO, −50 V VCBO, 500 mA IC, and featuring hFE = 100–600 at IC = 100 mA. It operates across −55 °C to +150 °C and is AEC-Q101 qualified for automotive power control and load switching applications.
For engineers reviewing the NSVBCX17LT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, SOT-23 footprint compatibility, −45 V breakdown rating, 500 mA continuous collector current, and AEC-Q101 qualification for under-hood automotive use.
Technical Context
The NSVBCX17LT1G is a silicon PNP BJT optimized for linear amplification and saturated switching in low-power analog and digital interface circuits. Its DC current gain (hFE) is specified from 100 to 600 over collector currents of 100–500 mA, with VCE(sat) ≤ 0.62 V at IC = 500 mA and IB = 50 mA.
Thermal performance is defined for two board conditions: 225 mW dissipation on FR-5 (RJA = 556 °C/W) and 300 mW on alumina substrate (RJA = 417 °C/W). Cutoff leakage is tightly controlled - ICBO ≤ 100 nA at 20 V and ≤ 5.0 A at 150 °C - supporting stable operation in high-temperature environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45 V - Maximum reverse-biased collector-emitter voltage before breakdown; enables use in 36 V automotive supply rails with margin. |
| IC (continuous) | 500 mA - Continuous collector current handling capacity; supports medium-current switching of relays, LEDs, and small solenoids. |
| hFE | 100–600 - DC current gain range at IC = 100 mA and VCE = 1 V; ensures reliable base drive design across production lots. |
| VCE(sat) | ≤ 0.62 V - Saturation voltage at IC = 500 mA / IB = 50 mA; minimizes conduction loss and self-heating in switching mode. |
| TJ range | −55 °C to +150 °C - Junction temperature operating range; certified for under-hood automotive locations per AEC-Q101. |
| Package | SOT-23 (TO-236) - Standard 3-pin surface-mount package with 2.90 × 1.30 × 1.00 mm footprint; compatible with automated pick-and-place and reflow. |
Pinout & Package
SOT-23 (TO-236) package, 3-pin, plastic surface-mount case (Case 318, Style 6), dimensions 2.90 × 1.30 × 1.00 mm, 1.90 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal; forward biasing between Base and Emitter initiates conduction; requires current-limited drive for saturation. |
| 2 | Emitter | Current source terminal for PNP device; connected to higher potential rail (e.g., battery +); defines reference for VEB and IE. |
| 3 | Collector | Current sink terminal; delivers load current to ground or lower-potential node; handles full IC and associated power dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - required for engine control, body electronics, and ADAS modules. |
| Pb-free, Halogen-free/BFR-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - eliminates hazardous substances without compromising thermal or electrical performance. |
| Low VCE(sat) | ≤ 0.62 V at rated IC/IB - reduces power loss and thermal stress in high-duty-cycle switching applications such as PWM-driven actuators. |
| High hFE consistency | 100–600 range at IC = 100 mA - enables simplified base resistor calculation and robust turn-on margin across process variation and temperature. |
Applications
| Automotive Body Control Module | Industrial Sensor Interface |
|---|---|
|
Use Scenario: Driving resistive loads (e.g., door lock solenoids, HVAC damper motors) from microcontroller GPIO pins in 12 V/24 V vehicle systems. IC Role / Device Role / Timing Role: PNP switch providing high-side current sourcing with logic-level base control and fast turn-off via emitter pull-down. Use Value: −45 V VCEO withstands load dump transients; AEC-Q101 qualification ensures 15-year field reliability in harsh under-dash environments. |
Use Scenario: Level-shifting and buffering analog sensor outputs (e.g., thermistor networks, pressure bridges) into ADC inputs of PLC controllers. IC Role / Device Role / Timing Role: Linear amplifier configured in common-emitter or emitter-follower topology to isolate and condition low-current signals. Use Value: Tight ICBO ≤ 100 nA at 25 °C ensures minimal offset drift; hFE stability over −40 °C to +85 °C maintains gain accuracy across industrial temperature ranges. |
| LED Driver for Dashboard Lighting | Power Sequencing in Embedded Systems |
|
Use Scenario: Constant-current switching of multi-segment LED arrays in instrument clusters, using PWM dimming at 1–10 kHz. IC Role / Device Role / Timing Role: Saturated PNP switch controlling LED anode connection to battery rail; base driven by MCU PWM output through current-limiting resistor. Use Value: VCE(sat) ≤ 0.62 V limits power loss to <150 mW at 250 mA - enabling compact layout without heatsinking in space-constrained dashboards. |
Use Scenario: Enabling/disabling auxiliary power rails (e.g., RF module, memory backup) during system boot-up or sleep transitions in medical handheld devices. IC Role / Device Role / Timing Role: High-side enable switch activated by sequencer IC or supervisor output to control power domain activation timing. Use Value: TJ range up to +150 °C supports operation adjacent to PMICs and processors; SOT-23 footprint allows placement near load for minimal trace inductance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCX17LT1G | No "NSV" prefix; not AEC-Q101 qualified; same electrical specs and SOT-23 package. | Intended for commercial/industrial use only; unsuitable for automotive production programs requiring PPAP documentation. | Select BCX17LT1G only for non-automotive designs where AEC-Q101 is not mandated. |
| MMBT3906LT1G | Lower VCEO (−40 V), lower IC (200 mA), hFE = 100–300; same SOT-23 package and RoHS compliance. | Not AEC-Q101 qualified; suitable for consumer electronics and prototyping but lacks automotive thermal and reliability validation. | Choose MMBT3906LT1G when load current ≤ 200 mA and automotive qualification is unnecessary. |
Compared with BCX17LT1G and MMBT3906LT1G, the NSVBCX17LT1G uniquely combines −45 V rating, 500 mA capability, and AEC-Q101 qualification - making it the only option among the three validated for production automotive high-side switching with extended temperature and lifetime requirements.
Availability
NSVBCX17LT1G is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, LED dashboard lighting, and embedded power sequencing requiring stable component supply and long-term lifecycle support.
Supply support for NSVBCX17LT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient electronics for automotive, industrial, cloud, and IoT applications.
The NSVBCX17LT1G belongs to onsemi's automotive-qualified general-purpose transistor family, designed specifically for high-reliability, high-temperature switching and amplification in safety-critical vehicle subsystems.
FAQ
What is the maximum collector-emitter voltage rating for the NSVBCX17LT1G?
The NSVBCX17LT1G has a maximum collector-emitter voltage (VCEO) rating of −45 V DC. This rating applies under open-base conditions with IC = 10 mA and is verified per the onsemi datasheet Rev. 10 (October 2024). The negative sign indicates PNP polarity - the device blocks up to 45 V in reverse bias between collector and emitter.
Is the NSVBCX17LT1G suitable for automotive applications?
Yes, the NSVBCX17LT1G is AEC-Q101 qualified and PPAP capable, with explicit validation for automotive use cases including under-hood and cabin electronics. Its −55 °C to +150 °C junction temperature range, load-dump tolerant VCEO, and onsemi's automotive site controls make NSVBCX17LT1G appropriate for production automotive systems.
What package type does the NSVBCX17LT1G use?
The NSVBCX17LT1G uses the SOT-23 (TO-236) surface-mount package, also referenced as Case 318, Style 6. Its mechanical outline measures 2.90 × 1.30 × 1.00 mm with 1.90 mm lead pitch, and it features Pb-free, halogen-free construction compliant with RoHS Directive 2011/65/EU.
How does the NSVBCX17LT1G differ from the BCX17LT1G?
The NSVBCX17LT1G and BCX17LT1G share identical electrical specifications and SOT-23 packaging, but the NSV prefix denotes automotive-specific manufacturing controls, AEC-Q101 qualification, and PPAP capability. The BCX17LT1G lacks these automotive validations and is intended for commercial/industrial use only.
What is the typical DC current gain (hFE) of the NSVBCX17LT1G at 100 mA collector current?
The NSVBCX17LT1G exhibits a DC current gain (hFE) ranging from 100 to 600 when tested at IC = 100 mA and VCE = 1.0 V DC, per the onsemi datasheet. This wide gain band reflects production lot variation and supports robust base-resistor design across temperature and voltage conditions.
NSVBCX17LT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 620mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 100mA, 1V
- Power - Max:
- 225 mW
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
NSVBCX17LT1G FAQ
1.How can I place an order for NSVBCX17LT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSVBCX17LT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSVBCX17LT1G reliable?
The price and inventory of NSVBCX17LT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBCX17LT1G is usually 5 days.
3.What payment methods are accepted for NSVBCX17LT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBCX17LT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSVBCX17LT1G?
NSVBCX17LT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSVBCX17LT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSVBCX17LT1G?
For technical support, including NSVBCX17LT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBCX17LT1G requirements.
6.How does Aetrix verify that NSVBCX17LT1G is sourced from the original manufacturer or authorized distributors?
All NSVBCX17LT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBCX17LT1G meets industry standards.
7.What is the process for return or replacement of NSVBCX17LT1G?
All NSVBCX17LT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSVBCX17LT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSVBCX17LT1G part is unused and in its original packaging.
Return procedure for NSVBCX17LT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSVBCX17LT1G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
