onsemi NSVMMBT5087LT3G

Overview

NSVMMBT5087LT3G from onsemi is a low-noise PNP silicon small-signal transistor in SOT-23 package, rated for −50 V_CEO, −50 mAdc continuous collector current, 40 MHz f_T, 2.0 dB noise figure at 1 kHz, and 4.0 pF C_obo. It serves as an RF preamplifier or audio amplifier stage in automotive sensor signal conditioning circuits.

For engineers reviewing the NSVMMBT5087LT3G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, low-noise performance at 20 µA–10 mA bias, SOT-23 thermal resistance of 417°C/W on alumina substrate, and verified h_FE range of 250–800 at −10 mA.

Technical Context

This device employs a planar epitaxial PNP structure optimized for low-noise amplification in the 1 kHz–20 MHz band. Its noise performance is characterized with source resistances from 3 kΩ to 10 kΩ, and it operates with V_CE = −5.0 Vdc across the full −55°C to +150°C junction temperature range.

The transistor supports linear operation with V_BE(sat) ≤ 0.85 Vdc at −10 mA/−1 mA drive and V_CE(sat) ≤ −0.3 Vdc under same conditions. Small-signal h_fe reaches 900 at 1 kHz, and output capacitance remains stable below 4.0 pF up to −5 V reverse bias.

Key Specifications

Pinout & Package

SOT-23 (TO-236) package, 2.90 mm × 1.30 mm × 1.00 mm body size, 1.90 mm lead pitch, Pb-free and RoHS compliant. Thermal pad not present; standard FR-5 board derating applies at 2.4 mW/°C above 25°C on alumina.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise PNP transistor applications.

Compared with BC857B,215 and PN2907A, NSVMMBT5087LT3G delivers superior noise performance (2.0 dB vs. ≥2.5 dB), guaranteed AEC-Q101 compliance, and SOT-23 thermal efficiency (417°C/W on alumina), making it the only choice for production automotive signal chains requiring both low-noise and functional safety alignment.

Availability

NSVMMBT5087LT3G is available at Aetrix Electronics and suitable for automotive cabin pressure sensing, industrial thermocouple signal conditioning, medical pulse oximetry front-ends, and infotainment audio line driving requiring stable component supply and AEC-Q101 traceability.

Supply support for NSVMMBT5087LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud, and IoT applications.

The MMBT5087L family is engineered for low-noise analog signal amplification in harsh-environment applications, with design emphasis on AEC-Q101 reliability, consistent h_FE, and thermal stability across extended temperature ranges.

FAQ

What is the maximum operating junction temperature for NSVMMBT5087LT3G?

The NSVMMBT5087LT3G has a specified junction and storage temperature range of −55°C to +150°C. This allows reliable operation in under-hood automotive environments and industrial control cabinets where ambient temperatures exceed 105°C. The device maintains electrical specifications within this full range when derated per its thermal resistance curves.

Is NSVMMBT5087LT3G pin-compatible with standard SOT-23 PNP transistors like BC857?

NSVMMBT5087LT3G uses Style 6 pinout (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector), matching BC857-series devices. However, direct substitution requires verification of h_FE spread, noise figure, and AEC-Q101 qualification-NSVMMBT5087LT3G offers tighter low-noise performance and automotive certification not guaranteed in generic BC857 variants.

What is the typical noise figure of NSVMMBT5087LT3G at 10 kHz and 100 kHz?

The NSVMMBT5087LT3G datasheet specifies noise figure only at 1 kHz (2.0 dB) and provides contour plots showing NF increases to ~3.5 dB at 10 kHz and ~6.0 dB at 100 kHz for optimal source impedances. These values are measured at I_C = −20 mA, V_CE = −5 Vdc, and reflect intrinsic transistor noise scaling with frequency.

Does NSVMMBT5087LT3G require external biasing components for stable DC operation?

Yes, NSVMMBT5087LT3G requires external base biasing-typically a voltage divider or current source-to establish the desired collector current. Its h_FE variation (250–800) means bias networks must accommodate gain spread; emitter degeneration resistors are recommended to improve thermal stability and linearity in production designs using NSVMMBT5087LT3G.

How does the thermal resistance of NSVMMBT5087LT3G differ between FR-5 and alumina substrates?

NSVMMBT5087LT3G exhibits R_JA = 556°C/W on FR-5 board and R_JA = 417°C/W on 0.4×0.3×0.024 in. 99.5% alumina substrate. This 25% improvement enables 300 mW total dissipation at 25°C on alumina versus 225 mW on FR-5, directly supporting higher bias currents in NSVMMBT5087LT3G-based low-noise amplifier stages.