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onsemi NSVMMBT5088LT3G

Part No.:
NSVMMBT5088LT3G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixNSVMMBT5088LT3G.pdf
Description:
TRANS NPN 30V 0.05A SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,496

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Product details

Overview

NSVMMBT5088LT3G from onsemi is an NPN silicon low-noise transistor in SOT-23 package, rated for VCEO = 30 V, IC = 50 mA, and fT = 50 MHz, with hFE ≥ 300 at IC = 100 µA and noise figure ≤ 3.0 dB at 1 kHz - used in RF preamplifier stages of AM/FM receivers and low-level analog signal conditioning.

For engineers reviewing the NSVMMBT5088LT3G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, low 4.0 pF Ccb, 10 pF Ceb, 50 MHz fT, and guaranteed hFE minimum across IC = 100 µA–10 mA.

Technical Context

This device operates as a general-purpose NPN bipolar junction transistor optimized for low-noise amplification in small-signal linear applications. Its design emphasizes high current gain (hFE up to 1200), low capacitance (Ccb ≤ 4.0 pF, Ceb ≤ 10 pF), and stable noise performance (NF ≤ 3.0 dB) at 1 kHz with RS = 10 kΩ.

Thermal behavior is characterized by RJA = 556 °C/W on FR-5 board and 417 °C/W on alumina substrate, supporting operation from −55 °C to +150 °C. It features Pb-free, halogen-free construction and meets RoHS compliance.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 30 V - maximum collector-emitter voltage before breakdown; defines safe operating range in common-emitter amplifier configurations.
IC 50 mA - continuous collector current limit; sets upper bound for biasing in low-power analog stages.
fT 50 MHz - current-gain bandwidth product; enables stable amplification up to mid-VHF frequencies with adequate gain margin.
hFE (min) 300 at IC = 100 µA - ensures predictable DC bias stability in high-impedance input networks.
NF ≤ 3.0 dB at 1 kHz, RS = 10 kΩ - quantifies low-noise capability critical for front-end signal recovery in sensitive receivers.
Ccb ≤ 4.0 pF - collector-base capacitance; minimizes Miller effect and maintains bandwidth in common-emitter topologies.
PD (FR-5) 225 mW - total dissipation on standard PCB; determines thermal derating requirements for sustained operation.

Pinout & Package

SOT-23 (TO-236) surface-mount package, 2.90 × 1.30 × 1.00 mm, 3-pin configuration per Style 6: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Pin/Terminal Circuit Role Design Meaning
1 - Base Control electrode Accepts base current to modulate collector-emitter conduction; requires stable bias network for low-noise operation.
2 - Emitter Current source terminal Provides reference node for emitter degeneration; often tied to ground or bypassed for AC signal path integrity.
3 - Collector Output current terminal Delivers amplified output current; connects to load resistor or next stage with minimal parasitic capacitance.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive electronics use with temperature cycling, humidity, and mechanical stress testing per standard.
Low noise figure (≤3.0 dB) Enables high-fidelity signal amplification in receiver front-ends where SNR preservation is critical.
High fT (50 MHz) Supports broadband analog gain up to VHF band without external compensation in simple CE configurations.
Guaranteed hFE ≥ 300 @ 100 µA Ensures reliable DC bias point establishment in high-impedance bias networks typical in discrete RF designs.
Pb-free, RoHS-compliant Meets global environmental regulations and supports lead-free reflow soldering processes (JEDEC J-STD-020).

Applications

AM/FM Radio Front-End Low-Noise Instrumentation Amplifier

Use Scenario: First-stage amplification of weak antenna signals in portable AM/FM radios before mixer or IF processing.

IC Role / Device Role / Timing Role: Low-noise NPN transistor configured in common-emitter topology to maximize voltage gain while minimizing added noise.

Use Value: NF ≤ 3.0 dB and fT = 50 MHz enable usable gain at 100 kHz–108 MHz with minimal degradation of received signal SNR.

Use Scenario: Input stage of precision analog measurement circuits requiring sub-microvolt noise contribution.

IC Role / Device Role / Timing Role: Discrete low-noise transistor in differential pair or cascode configuration for sensor signal conditioning.

Use Value: High hFE and low Ccb/Ceb support stable DC bias and wideband response without oscillation risk.

Automotive Cabin Audio Preamp Industrial Sensor Signal Conditioning

Use Scenario: Microphone or line-level signal amplification in vehicle infotainment systems operating across extended temperature range.

IC Role / Device Role / Timing Role: AEC-Q101-qualified NPN transistor providing gain and impedance transformation in audio signal chain.

Use Value: −55 °C to +150 °C junction rating and robust parametric stability ensure reliability under automotive thermal cycling.

Use Scenario: Amplifying low-amplitude outputs from thermocouples, strain gauges, or piezoelectric sensors in factory automation equipment.

IC Role / Device Role / Timing Role: Discrete BJT used in transimpedance or emitter-follower configuration for low-noise, high-input-impedance buffering.

Use Value: Guaranteed hFE ≥ 300 at microamp bias currents enables stable operation with high-value feedback resistors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise NPN transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MMBT5088LT1G Same die, identical electrical specs, but shipped in 3,000-piece tape-and-reel vs. NSVMMBT5088LT3G's 10,000-piece reel. No functional difference; suited for lower-volume prototyping or pilot production runs. Select MMBT5088LT1G when smaller reel size aligns with assembly line feed requirements or inventory turnover targets.
BC846B,215 Higher hFE (200–450), lower VCEO (65 V), higher Ccb (4.5 pF), no AEC-Q101 qualification. Not automotive-qualified; better suited for general-purpose amplification where noise < 3.0 dB is not required. Choose BC846B,215 only for non-automotive industrial or consumer applications where cost and availability outweigh noise and qualification needs.

Compared with NSVMMBT5088LT3G, MMBT5088LT1G offers identical performance in a smaller reel format, while BC846B,215 trades AEC-Q101 compliance and ultra-low noise for broader hFE distribution and higher voltage rating - making NSVMMBT5088LT3G the preferred choice for automotive and high-SNR analog signal paths.

Availability

NSVMMBT5088LT3G is available at Aetrix Electronics and suitable for AM/FM radio front-ends, automotive cabin audio preamplifiers, and industrial sensor signal conditioning requiring stable component supply, long-term lifecycle support, and AEC-Q101 assurance.

Supply support for NSVMMBT5088LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

NSVMMBT5088LT3G belongs to onsemi's low-noise bipolar transistor product line, designed specifically for high-fidelity analog signal amplification in automotive-grade and portable RF applications.

FAQ

What is the maximum collector-emitter voltage rating for NSVMMBT5088LT3G?

The NSVMMBT5088LT3G has a maximum collector-emitter voltage (VCEO) rating of 30 Vdc, verified per onsemi's datasheet under test condition IC = 1.0 mAdc and IB = 0. Exceeding this voltage risks irreversible breakdown and permanent device failure. This rating applies across the full operating temperature range of −55 °C to +150 °C.

Is NSVMMBT5088LT3G qualified for automotive applications?

Yes, NSVMMBT5088LT3G is AEC-Q101 qualified and PPAP capable, as explicitly stated in the onsemi datasheet. The "NSV" prefix denotes compliance with automotive-specific site and control change requirements, and the device undergoes rigorous stress testing including temperature cycling, humidity, and mechanical shock per AEC standards.

What is the noise figure specification of NSVMMBT5088LT3G and under what conditions?

The NSVMMBT5088LT3G has a maximum noise figure (NF) of 3.0 dB, measured at IC = 100 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, and f = 1.0 kHz. This value is guaranteed per the datasheet's Electrical Characteristics table and reflects its suitability for low-noise amplification in sensitive analog front-ends.

What package type and pin configuration does NSVMMBT5088LT3G use?

NSVMMBT5088LT3G uses the SOT-23 (TO-236) package with Style 6 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. Dimensions are 2.90 × 1.30 × 1.00 mm, and it is Pb-free and RoHS compliant, matching JEDEC MO-178 standards.

How does NSVMMBT5088LT3G differ from MMBT5088LT1G?

NSVMMBT5088LT3G and MMBT5088LT1G share identical die, electrical specifications, and SOT-23 packaging. The only confirmed difference is packaging quantity: NSVMMBT5088LT3G ships in 10,000-piece tape-and-reel, while MMBT5088LT1G ships in 3,000-piece tape-and-reel - both are Pb-free and AEC-Q101 qualified.

NSVMMBT5088LT3G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
50 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 100µA, 5V
Power - Max:
225 mW
Frequency - Transition:
50MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)

NSVMMBT5088LT3G FAQ

1.How can I place an order for NSVMMBT5088LT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSVMMBT5088LT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSVMMBT5088LT3G reliable?

The price and inventory of NSVMMBT5088LT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVMMBT5088LT3G is usually 5 days.

3.What payment methods are accepted for NSVMMBT5088LT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVMMBT5088LT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSVMMBT5088LT3G?

NSVMMBT5088LT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSVMMBT5088LT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSVMMBT5088LT3G?

For technical support, including NSVMMBT5088LT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVMMBT5088LT3G requirements.

6.How does Aetrix verify that NSVMMBT5088LT3G is sourced from the original manufacturer or authorized distributors?

All NSVMMBT5088LT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVMMBT5088LT3G meets industry standards.

7.What is the process for return or replacement of NSVMMBT5088LT3G?

All NSVMMBT5088LT3G units undergo pre-shipment inspection (PSI). If there is an issue with NSVMMBT5088LT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSVMMBT5088LT3G part is unused and in its original packaging.

Return procedure for NSVMMBT5088LT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NSVMMBT5088LT3G Tags

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