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onsemi NSVMMBT5401LT3G
- Part No.:
- NSVMMBT5401LT3G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NSVMMBT5401LT3G.pdf
- Description:
- TRANS PNP 150V 0.5A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:16,734
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Product details
Overview
NSVMMBT5401LT3G from onsemi is a high-voltage PNP silicon transistor in SOT-23 package, rated for −150 VCEO, −500 mA continuous collector current, and 100–300 MHz fT. It serves as a general-purpose switching or linear amplifier in automotive power management, relay drivers, and high-side load control circuits.
For engineers reviewing the NSVMMBT5401LT3G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, −160 VCBO rating, low VCE(sat) of −0.2 V at −10 mA/−1 mA, and thermal resistance of 417 °C/W on alumina substrate.
Technical Context
This PNP bipolar junction transistor operates with emitter-grounded configuration and supports DC amplification (hFE = 50–240 at −1.0 to −50 mA) and RF small-signal gain (hfe = 40–200 at 1 kHz). Its breakdown voltages (−150 VCEO, −160 VCBO) enable use in high-voltage off-state isolation.
Thermal performance is defined for two board conditions: FR-5 (225 mW, 556 °C/W) and 99.5% alumina substrate (300 mW, 417 °C/W), supporting design flexibility in thermally constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −150 Vdc - Supports high-side switching in 100 V rail systems with safety margin |
| IC (continuous) | −500 mAdc - Handles moderate-power loads such as solenoids and LED arrays |
| fT | 100–300 MHz - Enables stable operation up to VHF band in oscillator or RF amplifier stages |
| VCE(sat) | −0.2 V at IC = −10 mA, IB = −1 mA - Minimizes conduction loss in saturated-switch applications |
| Cobo | 6.0 pF max at VCB = −10 V - Limits Miller effect in fast-switching configurations |
| hFE | 50–240 at IC = −1.0 to −50 mA - Provides predictable DC gain across operating range |
| RJA (alumina) | 417 °C/W - Allows 300 mW dissipation at 25 °C ambient on ceramic substrate |
Pinout & Package
SOT-23 (TO-236) package, 2.90 × 1.30 × 1.00 mm, case 318, style 6 - surface-mount, lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input; requires negative bias relative to emitter to forward-bias base-emitter junction |
| 2 | Emiter | Common reference terminal; connected to higher potential in high-side switch topology |
| 3 | Collector | Output node; sinks current when device is active; rated for −150 V reverse voltage |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications including temperature cycling, humidity, and mechanical shock |
| Pb-free, halogen-free/BFR-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material requirements |
| High VCBO (−160 V) | Enables robust blocking in flyback snubber networks and inductive load commutation |
| Low noise figure (8.0 dB) | Supports low-noise preamplifier stages in analog sensor signal conditioning |
| Wide TJ range (−55 to +150 °C) | Permits operation in engine control units and powertrain modules without derating |
Applications
| Automotive Relay Driver | High-Voltage Power Supply Switch |
|---|---|
|
Use Scenario: Driving 12 V/24 V automotive relays in body control modules. IC Role / Device Role / Timing Role: PNP switch controlling relay coil current with emitter tied to battery rail. Use Value: −150 VCEO withstands inductive kickback; −0.2 VCE(sat) limits coil heating during sustained activation. |
Use Scenario: High-side switch in isolated DC-DC converter auxiliary bias supply. IC Role / Device Role / Timing Role: PNP pass transistor regulating auxiliary 15 V output from 48 V bus. Use Value: −160 VCBO ensures safe operation during transient overvoltage events on primary side. |
| LED String Current Limiter | Industrial Sensor Signal Amplifier |
|
Use Scenario: Constant-current sink for multi-segment automotive LED lighting. IC Role / Device Role / Timing Role: Linear-mode PNP current source with emitter-follower feedback. Use Value: hFE stability across −10 to −50 mA enables precise current regulation without external op-amp. |
Use Scenario: Low-noise preamplifier stage for piezoresistive pressure sensors. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with 8.0 dB NF at 1 kHz. Use Value: 40–200 hfe and 6.0 pF Cobo support wideband, low-distortion amplification in 10–100 kHz sensing bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-voltage transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT5401LT3G | Same die, non-automotive grade; no AEC-Q101 qualification; identical electrical specs | Not approved for automotive production; suitable for industrial/commercial designs only | Select when AEC-Q101 compliance is not required and cost optimization is prioritized |
| BC807-40LT1G | Lower VCEO (−45 V), higher hFE (250 min), same SOT-23 package | Restricted to ≤45 V systems; unsuitable for flyback snubbers or 48 V+ rails | Choose for low-voltage linear amplification where gain consistency outweighs voltage rating |
Compared with MMBT5401LT3G and BC807-40LT1G, the NSVMMBT5401LT3G uniquely combines AEC-Q101 qualification, −150 V blocking capability, and 300 MHz fT, making it the only option among the three validated for high-reliability 48 V automotive power switching.
Availability
NSVMMBT5401LT3G is available at Aetrix Electronics and suitable for automotive relay drivers, high-voltage power supply switches, and industrial sensor signal amplifiers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for NSVMMBT5401LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud, and IoT applications.
The NSVMMBT5401LT3G belongs to onsemi's high-voltage bipolar transistor product line, designed specifically for AEC-Q101-compliant automotive power control and signal conditioning functions.
FAQ
What is the maximum collector-emitter voltage rating for NSVMMBT5401LT3G?
The NSVMMBT5401LT3G has a guaranteed minimum V(BR)CEO of −150 Vdc at IC = −1.0 mAdc and IB = 0. This rating applies under steady-state DC conditions and defines the absolute maximum reverse-biased voltage the device can block in common-emitter configuration before breakdown occurs.
Is NSVMMBT5401LT3G suitable for automotive applications?
Yes, NSVMMBT5401LT3G is AEC-Q101 qualified and PPAP capable, with full test documentation per automotive reliability standards. Its −55 °C to +150 °C operating junction temperature range, Pb-free construction, and qualification for temperature cycling, HAST, and mechanical shock make it suitable for under-hood and powertrain applications.
What is the pin configuration of NSVMMBT5401LT3G in the SOT-23 package?
The NSVMMBT5401LT3G uses SOT-23 style 6 pinout: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This configuration is confirmed in the official onsemi mechanical drawings and matches the marking diagram shown on the device top-side (MMBT5401LT3G).
How does the thermal performance of NSVMMBT5401LT3G differ between FR-5 and alumina substrates?
On FR-5 board, NSVMMBT5401LT3G delivers 225 mW at 25 °C with RJA = 556 °C/W; on 99.5% alumina substrate, it achieves 300 mW at 25 °C with RJA = 417 °C/W. The lower thermal resistance on alumina allows 33% higher power dissipation in space-constrained automotive modules using ceramic PCBs.
What is the typical current-gain bandwidth product (fT) of NSVMMBT5401LT3G?
The NSVMMBT5401LT3G has an fT range of 100–300 MHz, measured at IC = −10 mAdc, VCE = −10 Vdc, and f = 100 MHz. This bandwidth supports stable small-signal amplification up to VHF frequencies and enables use in local oscillator buffer stages within automotive radar subsystems.
NSVMMBT5401LT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 150 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 10mA, 5V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
NSVMMBT5401LT3G FAQ
1.How can I place an order for NSVMMBT5401LT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSVMMBT5401LT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSVMMBT5401LT3G reliable?
The price and inventory of NSVMMBT5401LT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVMMBT5401LT3G is usually 5 days.
3.What payment methods are accepted for NSVMMBT5401LT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVMMBT5401LT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSVMMBT5401LT3G?
NSVMMBT5401LT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSVMMBT5401LT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSVMMBT5401LT3G?
For technical support, including NSVMMBT5401LT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVMMBT5401LT3G requirements.
6.How does Aetrix verify that NSVMMBT5401LT3G is sourced from the original manufacturer or authorized distributors?
All NSVMMBT5401LT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVMMBT5401LT3G meets industry standards.
7.What is the process for return or replacement of NSVMMBT5401LT3G?
All NSVMMBT5401LT3G units undergo pre-shipment inspection (PSI). If there is an issue with NSVMMBT5401LT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSVMMBT5401LT3G part is unused and in its original packaging.
Return procedure for NSVMMBT5401LT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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