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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSVMMBT5401M3T5G

Name: NSVMMBT5401M3T5G
Brand: onsemi
SKU: NSVMMBT5401M3T5G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSVMMBT5401M3T5G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SOT-723

Datasheet:: NSVMMBT5401M3T5G.pdf

Description:: TRANS PNP 150V 0.06A SOT-723

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NSVMMBT5401M3T5G from onsemi is a PNP silicon small-signal transistor in SOT-723 package, rated for −150 V_CEO, −60 mA continuous collector current, and 100–300 MHz f_T. It delivers low V_CE(sat) (−0.09 V at −10 mA/−1 mA) and high h_FE (min 50 at −1 mA), suited for automotive-grade low-power amplification and switching in space-constrained PCBs.

For engineers reviewing the NSVMMBT5401M3T5G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, −160 V_CBO rating, thermal resistance of 470 °C/W, SOT-723 footprint compatibility, and verified performance across −55 °C to +150 °C junction temperature range.

Technical Context

The NSVMMBT5401M3T5G is a discrete PNP bipolar junction transistor optimized for general-purpose amplifier and switching functions in automotive and industrial surface-mount designs. Its SOT-723 package enables high-density layout while maintaining thermal performance up to 130 mW at 25 °C ambient.

It operates with verified DC current gain (h_FE) from 50 to 240 across −1 mA to −50 mA collector currents, supports fast switching with t_r/t_f ≤ 10 ns under defined test conditions, and exhibits low input capacitance (C_ibo = 12.5 pF typ) and output capacitance (C_obo = 1.5 pF typ) for RF-adjacent signal paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−150 V - Supports high-voltage bias rails in automotive sensor interfaces and power supply control circuits.
I_C (cont.)	−60 mA - Enables reliable operation in low-current analog stages and logic-level switching without derating.
f_T	100–300 MHz - Allows use in RF front-end preamps, oscillator buffers, and broadband signal conditioning up to UHF.
V_CE(sat)	−0.09 V (typ, −10 mA/−1 mA) - Minimizes conduction loss and self-heating in active-load and current-source configurations.
R_JA	470 °C/W - Defines thermal limit for 130 mW dissipation on FR-5 board; requires careful copper area planning for >50 mW loads.
AEC-Q101	Qualified - Confirms suitability for automotive electronics per stress-test requirements including HTOL, TCT, and ESD.

Pinout & Package

SOT-723 (Case 631AA), 1.20 × 0.80 × 0.50 mm, 0.40 mm pitch. Ultra-compact three-terminal surface-mount package with exposed pad not present; compatible with standard reflow profiles for Pb-free assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-active and saturation biasing; requires current-limiting resistor in most switch applications.
2	Emitter	Common reference node in common-emitter configuration; connected to higher potential in PNP operation.
3	Collector	Output current sink terminal; handles full load current and must be routed with adequate trace width for thermal management.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood and infotainment systems requiring PPAP documentation and process control.
Low V_CE(sat)	−0.09 V typical at I_C = −10 mA ensures <1% voltage drop in precision current mirrors and active loads.
High f_T	300 MHz max enables stable gain in 10–100 MHz amplifier stages without external compensation.
Pb-free / RoHS	Fully compliant with EU RoHS Directive 2011/65/EU and halogen-free/BFR-free material specifications.
Wide T_J range	−55 °C to +150 °C operation supports deployment in engine control units and industrial motor drives.

Applications

Automotive Ambient Light Sensing	Industrial Current Mirror Reference
Use Scenario: Amplifying photodiode current in vehicle dashboard light adaptation circuits where space and thermal budget are constrained. IC Role / Device Role / Timing Role: PNP transconductance amplifier stage converting nanoamp-level photocurrent into usable voltage swing. Use Value: High h_FE (min 50 at −1 mA) and low noise figure (8.0 dB) preserve SNR in low-light conditions without additional op-amps.	Use Scenario: Building matched current sources in programmable logic controller (PLC) analog I/O modules requiring stable bias over temperature. IC Role / Device Role / Timing Role: Active current source element in Wilson or Widlar mirror topologies with precise I_C tracking. Use Value: Tight V_CE(sat) tolerance (−0.09 to −0.25 V) and consistent h_FE across batches enable ±1% current matching without trimming.
Low-Power RS-485 Receiver Bias	Consumer Appliance Power Sequencing
Use Scenario: Providing termination bias and fail-safe pull-up in isolated RS-485 transceiver receivers for smart metering gateways. IC Role / Device Role / Timing Role: High-voltage PNP switch enabling robust open-circuit detection and bus idle-state maintenance. Use Value: −160 V_CBO rating prevents breakdown during ESD transients and allows direct connection to 12 V rail with margin.	Use Scenario: Controlling delayed power-on sequencing of microcontroller peripherals in white goods control boards. IC Role / Device Role / Timing Role: Discrete timing delay element using RC-base network and saturation switching behavior. Use Value: Predictable t_on/t_off (≤10 ns) and low C_ibo/C_obo allow sub-microsecond edge control without parasitic coupling.

Automotive Ambient Light Sensing

Industrial Current Mirror Reference

Use Scenario: Amplifying photodiode current in vehicle dashboard light adaptation circuits where space and thermal budget are constrained.

IC Role / Device Role / Timing Role: PNP transconductance amplifier stage converting nanoamp-level photocurrent into usable voltage swing.

Use Value: High h_FE (min 50 at −1 mA) and low noise figure (8.0 dB) preserve SNR in low-light conditions without additional op-amps.

Use Scenario: Building matched current sources in programmable logic controller (PLC) analog I/O modules requiring stable bias over temperature.

IC Role / Device Role / Timing Role: Active current source element in Wilson or Widlar mirror topologies with precise I_C tracking.

Use Value: Tight V_CE(sat) tolerance (−0.09 to −0.25 V) and consistent h_FE across batches enable ±1% current matching without trimming.

Low-Power RS-485 Receiver Bias

Consumer Appliance Power Sequencing

Use Scenario: Providing termination bias and fail-safe pull-up in isolated RS-485 transceiver receivers for smart metering gateways.

IC Role / Device Role / Timing Role: High-voltage PNP switch enabling robust open-circuit detection and bus idle-state maintenance.

Use Value: −160 V_CBO rating prevents breakdown during ESD transients and allows direct connection to 12 V rail with margin.

Use Scenario: Controlling delayed power-on sequencing of microcontroller peripherals in white goods control boards.

IC Role / Device Role / Timing Role: Discrete timing delay element using RC-base network and saturation switching behavior.

Use Value: Predictable t_on/t_off (≤10 ns) and low C_ibo/C_obo allow sub-microsecond edge control without parasitic coupling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSVMMBT5401LT1G	SOT-23 package (larger footprint, 2.9 × 1.3 mm), same electrical specs and AEC-Q101 qualification.	Requires PCB redesign due to different pad layout and thermal mass; better heat dissipation at >80 mW.	Select when legacy SOT-23 layout exists or higher power derating is needed beyond SOT-723 limits.
BC807-40,215	NXP part in SOT-323; lower V_CEO (−45 V), higher I_C (−500 mA), no AEC-Q101 certification.	Not suitable for automotive or high-voltage bias; acceptable only in consumer-grade 3.3/5 V systems.	Choose only for cost-sensitive non-automotive applications where −45 V rating suffices and qualification is unnecessary.

Compared with NSVMMBT5401M3T5G, the NSVMMBT5401LT1G offers identical performance in a larger package for easier handling and thermal margin, while the BC807-40,215 trades voltage capability and qualification for higher current and lower unit cost in non-automotive contexts.

Availability

NSVMMBT5401M3T5G is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial current-source circuits, and low-power switching applications requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for NSVMMBT5401M3T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient technologies for automotive, industrial, cloud, and IoT applications.

The NSVMMBT5401M3T5G belongs to onsemi's automotive-qualified discrete transistor portfolio, designed specifically for high-reliability, space-constrained amplifier and switching roles in harsh-environment electronics.

FAQ

What is the maximum operating junction temperature for NSVMMBT5401M3T5G?

The NSVMMBT5401M3T5G has a specified junction temperature range of −55 °C to +150 °C. This rating is validated per AEC-Q101 stress testing and applies under continuous operation with proper PCB thermal design. Exceeding +150 °C risks permanent degradation of h_FE and leakage parameters, and is not supported by onsemi's reliability data for NSVMMBT5401M3T5G.

Is NSVMMBT5401M3T5G pin-compatible with standard MMBT5401 variants?

No - NSVMMBT5401M3T5G uses the SOT-723 package (1.20 × 0.80 mm), whereas standard MMBT5401 variants like MMBT5401LT1G use SOT-23 (2.9 × 1.3 mm). Pin numbering is identical (Base–Emitter–Collector), but land pattern, solder paste volume, and thermal relief must be redesigned for NSVMMBT5401M3T5G. The NSVMMBT5401M3T5G is not a drop-in replacement without layout changes.

Does NSVMMBT5401M3T5G support high-frequency amplifier designs?

Yes - NSVMMBT5401M3T5G is characterized with f_T from 100 MHz (min) to 300 MHz (max) at I_C = −10 mA and V_CE = −5 V. Its low C_ibo (12.5 pF typ) and C_obo (1.5 pF typ) support stable gain in narrowband 30–100 MHz amplifiers. For broadband designs above 150 MHz, layout parasitics must be minimized to realize NSVMMBT5401M3T5G's full f_T capability.

What does the "NSV" prefix indicate for NSVMMBT5401M3T5G?

Per onsemi documentation, the "NSV" prefix denotes devices manufactured at dedicated automotive production sites with enhanced process controls, unique lot traceability, and PPAP documentation support. NSVMMBT5401M3T5G is AEC-Q101 qualified and intended for automotive applications where site-specific change control and supply chain transparency are required - distinct from standard "MMBT"-prefixed commercial versions.

Can NSVMMBT5401M3T5G replace a Zener diode in simple voltage reference circuits?

No - NSVMMBT5401M3T5G is a PNP bipolar transistor, not a Zener diode. While it can be biased in reverse-active mode, its V_EB breakdown is only −5.0 V (VEBO), far below typical Zener reference voltages and with uncontrolled knee characteristics. NSVMMBT5401M3T5G should not be used as a voltage reference; purpose-built Zeners or shunt regulators are required for stable reference generation.

NSVMMBT5401M3T5G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SOT-723

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 60 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 130 mW

Frequency - Transition:: 180MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-723

NSVMMBT5401M3T5G FAQ

1.How can I place an order for NSVMMBT5401M3T5G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSVMMBT5401M3T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSVMMBT5401M3T5G reliable?

The price and inventory of NSVMMBT5401M3T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVMMBT5401M3T5G is usually 5 days.

3.What payment methods are accepted for NSVMMBT5401M3T5G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVMMBT5401M3T5G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSVMMBT5401M3T5G?

NSVMMBT5401M3T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSVMMBT5401M3T5G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSVMMBT5401M3T5G?

For technical support, including NSVMMBT5401M3T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVMMBT5401M3T5G requirements.

6.How does Aetrix verify that NSVMMBT5401M3T5G is sourced from the original manufacturer or authorized distributors?

All NSVMMBT5401M3T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVMMBT5401M3T5G meets industry standards.

7.What is the process for return or replacement of NSVMMBT5401M3T5G?

All NSVMMBT5401M3T5G units undergo pre-shipment inspection (PSI). If there is an issue with NSVMMBT5401M3T5G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSVMMBT5401M3T5G part is unused and in its original packaging.

Return procedure for NSVMMBT5401M3T5G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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