onsemi NSVMSA1162GT1G

Overview

NSVMSA1162GT1G from onsemi is a PNP general-purpose bipolar junction transistor in SC-59 (SOT-23) package, rated for 50 V V_(BR)CEO, 100 mA I_C, and 200 mW P_D; it delivers h_FE = 200–400 at I_C = 2 mA and operates reliably in automotive signal conditioning and industrial sensor interface circuits.

For engineers reviewing the NSVMSA1162GT1G datasheet, pinout, applications, or equivalent options, key selection factors include its PNP polarity, low V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, f_T = 80 MHz, moisture sensitivity level 1, and Pb-free SC-59 packaging suitable for reflow assembly.

Technical Context

This device is a silicon PNP BJT optimized for linear amplification and switching in low-power analog and digital interface stages. Its V_(BR)EBO = 7.0 V and I_CBO ≤ 0.1 µA support stable biasing in temperature-varying environments up to T_J = 150 °C.

The transistor exhibits predictable DC current gain across I_C = 0.1–100 mA with h_FE maintained ≥200 at I_C = 2 mA and V_CE = 6 V, and achieves f_T = 80 MHz under small-signal conditions (I_C = 1 mA, V_CE = 10 V), enabling use in audio-frequency amplifiers and fast-switching logic translators.

Key Specifications

Pinout & Package

NSVMSA1162GT1G uses the SC-59 (SOT-23) surface-mount package (Case 318D, 2.90 × 1.50 × 1.15 mm), with standardized pinout per Style 1: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with MMBT4403LT1G and BC807-40,215, the NSVMSA1162GT1G offers superior voltage margin (50 V), tighter h_FE specification (200–400), and guaranteed MSL 1 compliance-making it preferred for automotive-grade signal interfaces where reliability and process simplicity are prioritized over marginal cost reduction.

Availability

NSVMSA1162GT1G is available at Aetrix Electronics and suitable for automotive cabin sensors, industrial analog signal conditioning, consumer audio pre-amplifiers, and power management enable circuits requiring stable component supply across extended temperature ranges and high-reliability reflow processes.

Supply support for NSVMSA1162GT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NSVMSA1162GT1G belongs to onsemi's general-purpose bipolar transistor product line, engineered for robust performance in signal amplification, switching, and interface functions within space-constrained, thermally demanding environments.

FAQ

What is the maximum operating junction temperature for NSVMSA1162GT1G?

The NSVMSA1162GT1G has a maximum junction temperature (T_J) of 150 °C, as specified in its thermal characteristics table. This rating allows continuous operation in under-hood automotive environments and industrial enclosures without forced cooling. Derating of power dissipation begins above T_A = 25 °C per the device's thermal resistance curve. The NSVMSA1162GT1G must be mounted on PCBs with adequate copper area to maintain T_J ≤ 150 °C under full-load conditions.

Does NSVMSA1162GT1G support lead-free reflow soldering?

Yes, NSVMSA1162GT1G is a Pb-free device compliant with RoHS and qualified for standard lead-free reflow profiles (J-STD-020). Its moisture sensitivity level is rated MSL 1, meaning it can be placed directly onto reflow lines without baking or dry-packaging. The NSVMSA1162GT1G's SC-59 package withstands peak temperatures up to 260 °C for ≤60 seconds, ensuring compatibility with IPC-A-610 Class 2 and Class 3 assembly requirements.

What is the typical DC current gain (hFE) of NSVMSA1162GT1G at 10 mA collector current?

The NSVMSA1162GT1G datasheet specifies h_FE = 200–400 at I_C = 2 mA, V_CE = 6 V. At I_C = 10 mA, typical h_FE drops to approximately 150–350 based on Figure 2 and Figure 3 in the official datasheet. This reduction reflects normal BJT behavior under increased current density. Designers using NSVMSA1162GT1G at 10 mA should verify gain stability across temperature and apply appropriate base-current margins to ensure saturation in switching applications.

Is NSVMSA1162GT1G pin-compatible with SOT-23 NPN transistors like MMBT3904?

No, NSVMSA1162GT1G is not pin-compatible with NPN SOT-23 transistors such as MMBT3904. While both use the SC-59 (SOT-23) footprint, NSVMSA1162GT1G follows Style 1 pinout (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector), whereas MMBT3904 uses Style 1 for NPN (Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector). Swapping them without circuit revision will reverse polarity and cause functional failure. The NSVMSA1162GT1G must be used only in PNP-specific layouts.

What is the minimum emitter-base breakdown voltage (V(BR)EBO) for NSVMSA1162GT1G?

The minimum emitter-base breakdown voltage V(BR)EBO for NSVMSA1162GT1G is 7.0 Vdc, tested at I_E = 10 A with I_C = 0. This parameter defines the maximum reverse voltage allowable across the base-emitter junction before avalanche conduction occurs. It ensures reliable operation when the NSVMSA1162GT1G is used in circuits with negative-going base transients or in configurations where base bias may swing below emitter potential, such as in certain oscillator or clamp topologies.