My Inquiry
My Account
onsemi NSVMSB1218A-RT1G
- Part No.:
- NSVMSB1218A-RT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
NSVMSB1218A-RT1G.pdf
- Description:
- TRANS PNP 45V 0.1A SC70-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,186
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSVMSB1218A-RT1G from onsemi is a PNP silicon epitaxial planar transistor designed for general-purpose amplifier applications, featuring hFE of 210–340 at IC = 2.0 mA, VCE(sat) ≤ 0.5 V at IC = 100 mA/IB = 10 mA, and V(BR)CEO = 45 V. It operates in low-power surface-mount circuits such as signal amplification stages in portable audio or sensor interface front-ends.
For engineers reviewing the NSVMSB1218A-RT1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SC-70 (SOT-323) package compatibility, guaranteed hFE range, saturation voltage under specified drive conditions, and RoHS-compliant Pb-free construction.
Technical Context
This device is a discrete bipolar junction transistor with fixed PNP polarity and epitaxial planar structure, optimized for linear amplification rather than switching. Its electrical behavior is defined by DC current gain (hFE) measured at VCE = 10 V and IC = 2.0 mA, and saturation performance validated at IC = 100 mA with forced β = 10.
Thermal derating follows a linear curve from 150 mW at TA = 25 °C to zero at TA ≈ 150 °C, based on RJA = 833 °C/W for FR-4 PCB mounting with minimum footprint. Maximum ratings are strictly limited by junction temperature (TJ ≤ 150 °C) and storage range (−55 to +150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)CEO | 45 V - Ensures safe operation in 3.3 V/5 V/12 V bias rails with margin against transient overvoltage. |
| hFE | 210–340 - Provides stable small-signal gain in Class-A amplifier configurations without external feedback trimming. |
| VCE(sat) | ≤ 0.5 V - Minimizes voltage drop and power loss in emitter-follower or low-side switch applications. |
| IC (cont.) | 100 mA - Supports moderate-current analog stages such as preamp drivers or LED bias control. |
| PD | 150 mW - Limits usable power in ambient temperatures up to 100 °C without heatsinking. |
| V(BR)EBO | 7.0 V - Constrains base-emitter reverse bias in common-base or level-shifting configurations. |
Pinout & Package
The NSVMSB1218A-RT1G is housed in the SC-70 (SOT-323) package (Case 419, Style 7), a 3-pin, surface-mount, plastic-molded outline with gull-wing leads and 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-active biasing; requires current-limited drive to maintain hFE linearity. |
| 2 | Emiter | Common reference node in common-base or common-collector topologies; connects to higher-potential rail in PNP operation. |
| 3 | Collector | Output current sink node; voltage swing limited by V(BR)CEO and thermal dissipation constraints. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE = 210–340 ensures predictable small-signal amplification without gain-setting resistors in low-noise preamps. |
| Low saturation voltage | VCE(sat) ≤ 0.5 V enables efficient use in emitter-follower buffers where output swing must closely track input. |
| Pb-Free, Halogen-Free | RoHS-compliant construction meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) requirements for reflow assembly. |
| SC-70 footprint | Compact 2.2 × 2.2 mm outline supports high-density PCB layouts in space-constrained consumer and industrial modules. |
Applications
| Portable Audio Preamp | Sensor Signal Conditioning |
|---|---|
Use Scenario: Amplifying weak microphone or piezoelectric sensor outputs in battery-powered wearables. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with DC-coupled input. Use Value: High hFE delivers >20 dB voltage gain at 1 kHz with <1% THD, while low VCE(sat) preserves headroom in 3.3 V supply systems. | Use Scenario: Converting low-level thermistor or bridge transducer signals into robust analog outputs. IC Role / Device Role / Timing Role: Transimpedance or differential pair amplifier stage in analog front-end (AFE) circuitry. Use Value: Stable hFE across −25 °C to +75 °C ensures consistent gain calibration without software compensation. |
| LED Bias Control | Level-Shifting Interface |
Use Scenario: Driving indicator LEDs or low-current optocouplers from microcontroller GPIO pins. IC Role / Device Role / Timing Role: Low-side current sink switch with base-driven saturation control. Use Value: VCE(sat) ≤ 0.5 V limits power loss to <50 mW at 100 mA, enabling direct MCU drive without external driver ICs. | Use Scenario: Translating logic levels between 5 V legacy peripherals and 3.3 V microcontrollers. IC Role / Device Role / Timing Role: Active pull-up in open-collector interface with bidirectional voltage translation capability. Use Value: V(BR)EBO = 7.0 V allows safe reverse-bias operation during bus contention, preventing latch-up in I²C/SMBus lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3906LT1G | hFE = 100–300 (lower min), VCE(sat) = 0.4 V (slightly lower), same SC-70 package. | Lower hFE tolerance may require gain compensation in precision preamps. | Select when tighter VCE(sat) is prioritized over minimum gain stability. |
| PN2907A | TO-92 through-hole package, hFE = 100–300, VCE(sat) = 0.5 V, higher PD = 625 mW. | Not suitable for SMT production; used only in prototyping or legacy repair. | Select only for hand-soldered evaluation or replacement in existing through-hole designs. |
Compared with MMBT3906LT1G and PN2907A, the NSVMSB1218A-RT1G offers superior minimum hFE (210 vs. 100) and guaranteed RoHS compliance in SC-70, making it optimal for high-yield, automated assembly of compact analog signal chains requiring stable gain.
Availability
NSVMSB1218A-RT1G is available at Aetrix Electronics and suitable for portable audio preamplifiers, sensor signal conditioning circuits, and LED bias control applications requiring stable component supply, consistent parametric performance, and full traceability.
Supply support for NSVMSB1218A-RT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT markets.
The NSVMSB1218A-RT1G belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable, cost-effective amplification and switching in space-constrained, low-power electronic systems.
FAQ
What is the maximum continuous collector current rating for NSVMSB1218A-RT1G?
The NSVMSB1218A-RT1G has a maximum continuous collector current (IC) rating of 100 mA at TA = 25 °C. This rating decreases linearly with rising ambient temperature per the derating curve in the datasheet, reaching zero at approximately 150 °C. Operation above this limit risks thermal runaway and permanent degradation of the NSVMSB1218A-RT1G's hFE and VCE(sat) performance.
Is NSVMSB1218A-RT1G suitable for switching applications?
Yes, the NSVMSB1218A-RT1G can be used in low-speed switching applications due to its VCE(sat) ≤ 0.5 V at IC = 100 mA/IB = 10 mA and fast turn-on/off times shown in typical switching waveforms. However, it is not optimized for high-frequency switching; for such use cases, dedicated switching transistors like the NSS12201LT1G offer better fT and charge characteristics than the NSVMSB1218A-RT1G.
What does the "G" suffix in NSVMSB1218A-RT1G signify?
The "G" suffix in NSVMSB1218A-RT1G indicates a Pb-free, halogen-free, and RoHS-compliant packaging variant per onsemi's standard marking convention. It confirms that the NSVMSB1218A-RT1G meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and is qualified for lead-free reflow soldering processes without special baking requirements.
How is the pinout configured for NSVMSB1218A-RT1G in the SC-70 package?
The NSVMSB1218A-RT1G uses Style 7 pinout for the SC-70 (SOT-323) package: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This configuration is explicitly defined in the mechanical case outline drawing (Case 419, Style 7) and verified in the device marking diagram. Misalignment with alternate styles (e.g., Style 6) will result in incorrect biasing and potential device failure.
Does NSVMSB1218A-RT1G have guaranteed hFE at elevated temperatures?
The NSVMSB1218A-RT1G datasheet specifies hFE = 210–340 at TA = 25 °C, with Figure 3 showing characteristic curves at −25 °C, +25 °C, and +75 °C. While no minimum hFE is guaranteed above 25 °C, the data confirms usable gain down to 150 at +75 °C under VCE = 10 V and IC = 2.0 mA - sufficient for most non-critical analog functions in the NSVMSB1218A-RT1G's operating range.
NSVMSB1218A-RT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 210 @ 2mA, 10V
- Power - Max:
- 150 mW
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3 (SOT323)
NSVMSB1218A-RT1G FAQ
1.How can I place an order for NSVMSB1218A-RT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSVMSB1218A-RT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSVMSB1218A-RT1G reliable?
The price and inventory of NSVMSB1218A-RT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVMSB1218A-RT1G is usually 5 days.
3.What payment methods are accepted for NSVMSB1218A-RT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVMSB1218A-RT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSVMSB1218A-RT1G?
NSVMSB1218A-RT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSVMSB1218A-RT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSVMSB1218A-RT1G?
For technical support, including NSVMSB1218A-RT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVMSB1218A-RT1G requirements.
6.How does Aetrix verify that NSVMSB1218A-RT1G is sourced from the original manufacturer or authorized distributors?
All NSVMSB1218A-RT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVMSB1218A-RT1G meets industry standards.
7.What is the process for return or replacement of NSVMSB1218A-RT1G?
All NSVMSB1218A-RT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSVMSB1218A-RT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSVMSB1218A-RT1G part is unused and in its original packaging.
Return procedure for NSVMSB1218A-RT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSVMSB1218A-RT1G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
