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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSVT1602CLTWG

Name: NSVT1602CLTWG
Brand: onsemi
SKU: NSVT1602CLTWG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSVT1602CLTWG

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SOT-1205, 8-LFPAK56

Datasheet:: NSVT1602CLTWG.pdf

Description:: TRANS NPN 160V 1.5A 8-LFPAK

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Product details

Overview

NSVT1602CLTWG from onsemi is a low-saturation-voltage NPN bipolar junction transistor rated for 160 V V_CEO, 1.5 A continuous collector current, and 0.04–0.08 V V_CE(sat) at I_C = 250 mA / I_B = 25 mA. It features high-speed switching (t_on = 30 ns, t_f = 30 ns), AEC-Q101 qualification, and operates up to 175 °C junction temperature. It is used in automotive load switching and gate driver buffering.

For engineers reviewing the NSVT1602CLTWG datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, LFPAK8 package details, thermal derating curves, switching timing data, and qualified automotive alternatives - all confirmed from onsemi's official NST1602CL datasheet (Rev. 1, Feb. 2022).

Technical Context

This device is a single NPN BJT optimized for high-current, low-loss switching in constrained thermal environments. Its design emphasizes low V_CE(sat) (as low as 0.035 V at I_C = 250 mA / I_B = 50 mA) and high f_T (100 MHz), enabling efficient operation in DC-DC converter power stages and gate driver buffers where conduction loss and switching speed are critical.

The NSVT1602CLTWG uses an LFPAK8 (Case 760AD) package with exposed drain pad for enhanced thermal performance, supporting 2.2 W power dissipation when mounted on a 1 in² copper pad. Its AEC-Q101 qualification confirms robustness for automotive under-hood applications including engine control modules and body electronics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	160 V - Maximum blocking voltage across collector-emitter in active switching, suitable for 12 V/48 V automotive systems with transient margin.
I_C (continuous)	1.5 A - Continuous collector current rating defines usable load drive capability without thermal runaway under steady-state conditions.
V_CE(sat) (typ)	0.04–0.08 V - Low saturation voltage minimizes conduction losses, reducing power dissipation and improving efficiency in high-duty-cycle switches.
f_T	100 MHz - Gain-bandwidth product enables stable high-frequency switching up to ~10–20 MHz in practical gate driver applications.
t_on/t_f	30 ns / 30 ns - Fast turn-on and fall times support high-frequency PWM operation while limiting switching losses.
T_J(max)	175 °C - Maximum junction temperature allows reliable operation in under-hood automotive environments without forced cooling.
P_C (max)	2.2 W - Power dissipation limit on 1 in² 2 oz copper PCB, defining thermal design boundary for heatsinking requirements.

Pinout & Package

NSVT1602CLTWG is housed in the LFPAK8 (Case 760AD) surface-mount package: 3.3 mm × 3.3 mm footprint, 0.65 mm pitch, with exposed drain pad for thermal enhancement and mechanical robustness.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal	Low-impedance return path for collector current; connected to ground or low-side reference in switch configurations.
2 (Base)	Control input	Current-driven input requiring precise I_B to achieve target I_C; sensitive to drive impedance and layout parasitics.
3 (Collector)	High-side switched node	Carries full load current; connects to supply rail or inductive load; requires careful routing to minimize inductance and EMI.
Exposed Pad	Thermal & electrical ground	Internally tied to emitter; must be soldered to large copper area for thermal management and noise reduction.

Key Features

Feature	Design Value
Low V_CE(sat)	0.035 V min enables <10 mW conduction loss at 250 mA, critical for thermally limited automotive modules.
AEC-Q101 qualification	Validated for automotive use per stress test requirements including HTOL, TC, and HAST - no additional qualification needed for Tier 1 designs.
LFPAK8 thermal performance	2.2 W power dissipation on 1 in² copper pad reduces need for external heatsinks in space-constrained ECUs.
High f_T and fast switching	100 MHz f_T and 30 ns t_on/t_f support clean edge integrity in 1–5 MHz gate driving applications.
Pb-free / Halogen-free	RoHS-compliant construction meets global automotive material restrictions and end-of-life recycling mandates.

Applications

Automotive Load Switch	Gate Driver Buffer
Use Scenario: Controlling 12 V solenoid valves or lighting loads in engine control units with pulse-width modulated duty cycles. IC Role / Device Role / Timing Role: NPN BJT operating in saturation/cutoff mode as a low-side switch, driven by MCU GPIO or dedicated driver IC. Use Value: Low V_CE(sat) reduces heat generation during sustained ON periods, extending module lifetime in sealed enclosures.	Use Scenario: Boosting current drive capability for MOSFET/IGBT gates in compact DC-DC converters or motor drivers. IC Role / Device Role / Timing Role: Current amplifier stage between logic-level controller and power device gate, delivering >50 mA peak base current. Use Value: Fast 30 ns switching ensures minimal propagation delay and sharp gate transitions, improving converter efficiency and EMI profile.
DC-DC Converter Power Stage	Body Control Module Output
Use Scenario: High-side or low-side switching element in buck or boost regulator topologies powering infotainment or ADAS subsystems. IC Role / Device Role / Timing Role: Primary switching transistor handling up to 1.5 A continuous current with controlled V_CE transitions. Use Value: 100 MHz f_T supports stable closed-loop control at switching frequencies up to 2 MHz without gain roll-off.	Use Scenario: Driving window lift motors, mirror actuators, or HVAC dampers in vehicle body control modules. IC Role / Device Role / Timing Role: Robust discrete switch interfacing between microcontroller outputs and inductive loads with flyback protection. Use Value: AEC-Q101 qualification and 175 °C T_J(max) ensure reliability across extended temperature ranges (-40 °C to +125 °C ambient).

Automotive Load Switch

Gate Driver Buffer

Use Scenario: Controlling 12 V solenoid valves or lighting loads in engine control units with pulse-width modulated duty cycles.

IC Role / Device Role / Timing Role: NPN BJT operating in saturation/cutoff mode as a low-side switch, driven by MCU GPIO or dedicated driver IC.

Use Value: Low V_CE(sat) reduces heat generation during sustained ON periods, extending module lifetime in sealed enclosures.

Use Scenario: Boosting current drive capability for MOSFET/IGBT gates in compact DC-DC converters or motor drivers.

IC Role / Device Role / Timing Role: Current amplifier stage between logic-level controller and power device gate, delivering >50 mA peak base current.

Use Value: Fast 30 ns switching ensures minimal propagation delay and sharp gate transitions, improving converter efficiency and EMI profile.

DC-DC Converter Power Stage

Body Control Module Output

Use Scenario: High-side or low-side switching element in buck or boost regulator topologies powering infotainment or ADAS subsystems.

IC Role / Device Role / Timing Role: Primary switching transistor handling up to 1.5 A continuous current with controlled V_CE transitions.

Use Value: 100 MHz f_T supports stable closed-loop control at switching frequencies up to 2 MHz without gain roll-off.

Use Scenario: Driving window lift motors, mirror actuators, or HVAC dampers in vehicle body control modules.

IC Role / Device Role / Timing Role: Robust discrete switch interfacing between microcontroller outputs and inductive loads with flyback protection.

Use Value: AEC-Q101 qualification and 175 °C T_J(max) ensure reliability across extended temperature ranges (-40 °C to +125 °C ambient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSVT1601CLTWG	Complementary PNP device with same V_CEO (160 V), lower I_C (1.0 A), higher V_CE(sat) (0.12–0.22 V), and identical LFPAK8 package.	Used in complementary push-pull output stages or high-side switching where PNP topology is required.	Select when bidirectional current control or level-shifting with matched thermal behavior is needed alongside NSVT1602CLTWG.
STB1602L	160 V V_CEO, 1.5 A I_C, but higher V_CE(sat) (0.15 V typ), slower f_T (40 MHz), and different SOT-223 package with inferior thermal resistance.	Suitable for non-automotive industrial controls where AEC-Q101 is not mandated and board space permits larger footprint.	Choose only if LFPAK8 footprint compatibility is not required and cost is prioritized over thermal performance and switching speed.

Compared with NSVT1602CLTWG, NSVT1601CLTWG offers complementary polarity in the same package for matched thermal design, while STB1602L trades off speed, saturation voltage, and automotive qualification for lower cost and legacy packaging - making NSVT1602CLTWG optimal for thermally demanding, high-frequency automotive switching.

Availability

NSVT1602CLTWG is available at Aetrix Electronics and suitable for automotive load switching, gate driver buffering, and DC-DC converter power stages requiring stable component supply, AEC-Q101 compliance, and high-temperature reliability.

Supply support for NSVT1602CLTWG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud, and IoT applications.

The NST1602CL series is part of onsemi's automotive-qualified bipolar transistor portfolio, designed specifically for high-reliability, thermally constrained switching in engine control, body electronics, and power conversion modules.

FAQ

What is the maximum continuous collector current rating for NSVT1602CLTWG?

The NSVT1602CLTWG has a maximum continuous collector current (I_C) rating of 1.5 A at T_A = 25 °C with appropriate PCB copper area. Derating applies above 25 °C ambient, reaching zero at 175 °C junction temperature. This rating is validated under FR4 board conditions with 1 in² 2 oz copper, and defines safe steady-state operation without thermal runaway. The NSVT1602CLTWG maintains specified h_FE and V_CE(sat) within this range.

Is NSVT1602CLTWG qualified for automotive applications?

Yes, NSVT1602CLTWG is AEC-Q101 qualified and PPAP capable, as explicitly stated in the onsemi NST1602CL datasheet. This qualification covers temperature cycling, high-temperature operating life, and humidity testing required for automotive under-hood and cabin applications. The NSVT1602CLTWG marking suffix "TWG" denotes its automotive-grade status, Pb-free construction, and LFPAK8 packaging - confirming suitability for Tier 1 ECU designs without additional component-level qualification.

What package type does NSVT1602CLTWG use, and what are its thermal advantages?

NSVT1602CLTWG uses the LFPAK8 (Case 760AD) package: a 3.3 mm × 3.3 mm surface-mount outline with 0.65 mm pitch and an exposed emitter pad. Its thermal advantage lies in direct copper attachment of the emitter pad, enabling 2.2 W power dissipation on a 1 in² 2 oz copper pad - nearly 3× higher than standard SOT-223. This allows NSVT1602CLTWG to operate reliably in compact, sealed automotive modules without external heatsinks.

How does the V_CE(sat) of NSVT1602CLTWG compare across different drive conditions?

NSVT1602CLTWG exhibits graded V_CE(sat): 0.035–0.07 V at I_C = 250 mA / I_B = 50 mA; 0.04–0.08 V at I_C = 250 mA / I_B = 25 mA; and 0.07–0.14 V at I_C = 500 mA / I_B = 50 mA. These values reflect strong current gain (h_FE ≥ 120 at 400 mA) and optimized base drive design. Lower V_CE(sat) at higher I_B/I_C ratios confirms robust saturation, directly reducing conduction losses in NSVT1602CLTWG-based power switches.

Can NSVT1602CLTWG replace older SOT-223 transistors in existing designs?

NSVT1602CLTWG is not a drop-in replacement for SOT-223 devices due to its LFPAK8 footprint, pinout, and thermal pad requirements. While electrically comparable in V_CEO and I_C, the NSVT1602CLTWG demands PCB redesign to accommodate its 3.3 mm × 3.3 mm layout and exposed emitter pad connection. However, its superior thermal performance and lower V_CE(sat) justify re-layout in new automotive designs targeting higher efficiency and reliability - especially where NSVT1602CLTWG's AEC-Q101 status is mandatory.

NSVT1602CLTWG Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SOT-1205, 8-LFPAK56

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 140mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 100mA, 5V

Power - Max:: 800 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-LFPAK

NSVT1602CLTWG FAQ

1.How can I place an order for NSVT1602CLTWG through Aetrix?

Please submit a Request for Quotation (RFQ) for NSVT1602CLTWG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSVT1602CLTWG reliable?

The price and inventory of NSVT1602CLTWG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVT1602CLTWG is usually 5 days.

3.What payment methods are accepted for NSVT1602CLTWG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVT1602CLTWG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSVT1602CLTWG?

NSVT1602CLTWG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSVT1602CLTWG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSVT1602CLTWG?

For technical support, including NSVT1602CLTWG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVT1602CLTWG requirements.

6.How does Aetrix verify that NSVT1602CLTWG is sourced from the original manufacturer or authorized distributors?

All NSVT1602CLTWG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVT1602CLTWG meets industry standards.

7.What is the process for return or replacement of NSVT1602CLTWG?

All NSVT1602CLTWG units undergo pre-shipment inspection (PSI). If there is an issue with NSVT1602CLTWG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSVT1602CLTWG part is unused and in its original packaging.

Return procedure for NSVT1602CLTWG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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