Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSVT856MTWFTBG

Name: NSVT856MTWFTBG
Brand: onsemi
SKU: NSVT856MTWFTBG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NSVT856MTWFTBG

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: 3-XFDFN

Datasheet:: NSVT856MTWFTBG.pdf

Description:: TRANS PNP 65V 0.1A 3XDFNW

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,990

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NSVT856MTWFTBG from onsemi is a PNP general-purpose bipolar junction transistor rated for −65 V V_CEO, −100 mA continuous collector current, and 100 MHz transition frequency (f_T). Housed in an ultra-compact XDFNW3 (1.00 × 1.00 × 0.38 mm) wettable-flank package, it supports automotive-grade optical inspection and low-power surface-mount amplifier applications where board space and reliability are critical.

For engineers reviewing the NSVT856MTWFTBG datasheet, pinout, applications, or equivalent options, key selection factors include its AEC-Q101 qualification, −0.25 V V_CE(sat) at −10 mA/−0.5 mA, 220–450 h_FE range, and thermal resistance of 191 °C/W - all validated under automotive temperature conditions (−55°C to +150°C).

Technical Context

This PNP transistor operates in linear amplification and switching modes with verified DC current gain (h_FE) from 220 to 450 at −10 mA I_C and −5.0 V V_CE, and maintains stable performance across −55°C to +150°C junction temperature. Its f_T of 100 MHz enables use in medium-frequency signal conditioning circuits.

The device features low saturation voltages (V_CE(sat) = −0.25 V max at −10 mA/−0.5 mA; −0.60 V max at −100 mA/−5.0 mA) and tight base-emitter turn-on voltage (V_BE(on) = −0.6 to −0.82 V), supporting precise biasing in compact analog front-ends and sensor interface stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−65 V - Maximum safe collector-emitter reverse voltage before breakdown in open-base configuration.
I_C (continuous)	−100 mA - Continuous collector current rating defining maximum steady-state load drive capability.
f_T	100 MHz - Transition frequency indicating usable bandwidth for small-signal amplification.
h_FE	220–450 - DC current gain range enabling predictable bias design across production lots and temperatures.
V_CE(sat)	−0.25 V (typ.) at −10 mA/−0.5 mA - Low saturation voltage reduces power loss and heat generation in switching applications.
R_JA	191 °C/W - Junction-to-ambient thermal resistance measured per JESD51-7 on standard PCB, guiding heatsinking requirements.
P_D	650 mW - Maximum power dissipation at 25°C ambient, limiting usable output swing in linear operation.

Pinout & Package

NSVT856MTWFTBG uses the XDFNW3 (Case 521AC) 3-terminal ultra-small-outline package measuring 1.00 × 1.00 × 0.38 mm with wettable flanks for automated optical inspection. The package has no exposed die pad; all terminals are solderable edge pads.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased PNP operation; requires negative bias relative to emitter to enable conduction.
2	Emitter	Current source terminal in PNP configuration; connected to higher potential rail in typical common-emitter amplifier layouts.
3	Collector	Current sink terminal; connects to load or next stage input, with voltage swing limited by −65 V V_CEO rating.

Key Features

Feature	Design Value
Wettable flank package	Enables 100% automated optical inspection (AOI) of solder joints on automotive PCBs without X-ray.
AEC-Q101 qualification	Validated for automotive electronics use including engine control modules and body electronics under stress testing.
Low V_CE(sat) at high I_C	−0.60 V max at −100 mA/−5.0 mA ensures minimal voltage drop and thermal rise in power-switching nodes.
High f_T with low C_obo	100 MHz f_T and 1.8–4.0 pF C_obo support stable RF-coupled preamplifier stages up to ~50 MHz.
Pb-free, halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, eliminating hazardous substances in final assembly.

Applications

Automotive Body Control Module	Industrial Sensor Signal Conditioning
Use Scenario: Driving LED indicators and small solenoids in door module PCBs with space-constrained layouts. IC Role / Device Role / Timing Role: PNP switch providing low-side sinking capability with fast turn-off due to low stored charge. Use Value: Wettable flanks ensure AOI pass rate >99.9% in high-volume SMT lines; −65 V rating accommodates 42 V battery transients.	Use Scenario: Amplifying low-level thermistor or RTD bridge outputs in programmable logic controller (PLC) analog input cards. IC Role / Device Role / Timing Role: Linear amplifier stage with stable h_FE over −40°C to +85°C operating range. Use Value: 220–450 h_FE tolerance allows single-bias design across temperature; 1.0 dB NF enables sub-mV signal integrity.
Consumer Portable Audio Biasing	Medical Wearable Front-End
Use Scenario: Providing active bias for Class-A headphone amplifier stages in battery-powered portable devices. IC Role / Device Role / Timing Role: Constant-current source for BJT-based output stage, minimizing crossover distortion. Use Value: −0.25 V V_CE(sat) at light loads preserves headroom; 650 mW P_D supports sustained 50 mW output without derating.	Use Scenario: Isolating and level-shifting ECG electrode signals prior to ADC sampling in ultra-low-power wearable patches. IC Role / Device Role / Timing Role: High-input-impedance emitter-follower buffer with minimal offset drift. Use Value: −0.6 to −0.82 V V_BE(on) enables precise bias network design; 150°C T_J(max) supports sterilization reflow cycles.

Automotive Body Control Module

Industrial Sensor Signal Conditioning

Use Scenario: Driving LED indicators and small solenoids in door module PCBs with space-constrained layouts.

IC Role / Device Role / Timing Role: PNP switch providing low-side sinking capability with fast turn-off due to low stored charge.

Use Value: Wettable flanks ensure AOI pass rate >99.9% in high-volume SMT lines; −65 V rating accommodates 42 V battery transients.

Use Scenario: Amplifying low-level thermistor or RTD bridge outputs in programmable logic controller (PLC) analog input cards.

IC Role / Device Role / Timing Role: Linear amplifier stage with stable h_FE over −40°C to +85°C operating range.

Use Value: 220–450 h_FE tolerance allows single-bias design across temperature; 1.0 dB NF enables sub-mV signal integrity.

Consumer Portable Audio Biasing

Medical Wearable Front-End

Use Scenario: Providing active bias for Class-A headphone amplifier stages in battery-powered portable devices.

IC Role / Device Role / Timing Role: Constant-current source for BJT-based output stage, minimizing crossover distortion.

Use Value: −0.25 V V_CE(sat) at light loads preserves headroom; 650 mW P_D supports sustained 50 mW output without derating.

Use Scenario: Isolating and level-shifting ECG electrode signals prior to ADC sampling in ultra-low-power wearable patches.

IC Role / Device Role / Timing Role: High-input-impedance emitter-follower buffer with minimal offset drift.

Use Value: −0.6 to −0.82 V V_BE(on) enables precise bias network design; 150°C T_J(max) supports sterilization reflow cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSVT857MTWFTBG	Higher V_CEO (−80 V), same package and pinout; h_FE min 150 at −10 mA.	Better suited for 48 V industrial bus interfaces requiring higher breakdown margin.	Select when system transients exceed −65 V but layout space and AOI requirements remain identical.
DMT3020LFG	Same XDFNW3 package; −100 mA I_C, −60 V V_CEO, but lower f_T (80 MHz) and no AEC-Q101 certification.	Acceptable for non-automotive consumer applications where qualification is not required.	Choose for cost-sensitive non-automotive designs where full AEC-Q101 compliance is unnecessary.

Compared with NSVT856MTWFTBG, NSVT857MTWFTBG offers enhanced voltage robustness without layout change, while DMT3020LFG provides functional equivalence at lower qualification cost - making the former ideal for upgraded automotive systems and the latter suitable for commercial-grade replacements where qualification overhead is prohibitive.

Availability

NSVT856MTWFTBG is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, portable audio biasing, and medical wearable front-ends requiring stable component supply, AEC-Q101 traceability, and wettable-flank AOI compatibility.

Supply support for NSVT856MTWFTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NSVT series targets automotive-qualified discrete transistors designed specifically for space-constrained, high-reliability surface-mount applications demanding AOI-compliant packaging and extended temperature operation.

FAQ

What is the maximum junction temperature rating for NSVT856MTWFTBG?

The NSVT856MTWFTBG has a specified junction and storage temperature range of −65°C to +150°C. This rating is validated per AEC-Q101 stress testing and supports operation in under-hood automotive environments and industrial enclosures with passive cooling. Thermal design must respect the 191 °C/W R_JA value under JESD51-7 test conditions to avoid exceeding +150°C at the die.

Is NSVT856MTWFTBG pin-compatible with NSVT857MTWFTBG?

Yes, NSVT856MTWFTBG and NSVT857MTWFTBG share identical XDFNW3 package dimensions, pin assignment (Base–Emitter–Collector on pins 1–2–3), and marking layout. Both are AEC-Q101 qualified and wettable-flank enabled, allowing direct substitution where −80 V V_CEO margin is required without PCB revision.

Does NSVT856MTWFTBG support lead-free reflow profiles?

Yes, NSVT856MTWFTBG is Pb-free, halogen-free, and RoHS-compliant, qualified for standard lead-free reflow profiles per J-STD-020. Its XDFNW3 package withstands peak temperatures up to 260°C for 30 seconds, matching IPC/JEDEC specifications for SnAgCu soldering processes used in automotive and industrial manufacturing.

What is the typical noise figure of NSVT856MTWFTBG and at what conditions is it measured?

The NSVT856MTWFTBG has a typical noise figure of 1.0 dB, measured at I_C = −0.2 mA, V_CE = −5.0 V, source resistance R_S = 2.0 kΩ, frequency = 1.0 kHz, and bandwidth = 200 Hz. This low-noise performance makes NSVT856MTWFTBG suitable for precision analog front-ends where signal integrity below 10 kHz is critical.

Can NSVT856MTWFTBG be used in switching applications above 10 MHz?

No - while NSVT856MTWFTBG has an f_T of 100 MHz, its switching speed is limited by stored charge and minority-carrier lifetime. Measured turn-off time (t_off) exceeds 100 ns at I_C = −100 mA, making NSVT856MTWFTBG best suited for switching frequencies ≤1 MHz. For >5 MHz switching, consider RF-optimized transistors with shorter t_off and lower C_obo.

NSVT856MTWFTBG Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 65 V

Vce Saturation (Max) @ Ib, Ic:: 900mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 220 @ 2mA, 5V

Power - Max:: 650 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: 3-XDFNW (1x1)

NSVT856MTWFTBG FAQ

1.How can I place an order for NSVT856MTWFTBG through Aetrix?

Please submit a Request for Quotation (RFQ) for NSVT856MTWFTBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSVT856MTWFTBG reliable?

The price and inventory of NSVT856MTWFTBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVT856MTWFTBG is usually 5 days.

3.What payment methods are accepted for NSVT856MTWFTBG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVT856MTWFTBG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSVT856MTWFTBG?

NSVT856MTWFTBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSVT856MTWFTBG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSVT856MTWFTBG?

For technical support, including NSVT856MTWFTBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVT856MTWFTBG requirements.

6.How does Aetrix verify that NSVT856MTWFTBG is sourced from the original manufacturer or authorized distributors?

All NSVT856MTWFTBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVT856MTWFTBG meets industry standards.

7.What is the process for return or replacement of NSVT856MTWFTBG?

All NSVT856MTWFTBG units undergo pre-shipment inspection (PSI). If there is an issue with NSVT856MTWFTBG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSVT856MTWFTBG part is unused and in its original packaging.

Return procedure for NSVT856MTWFTBG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…