NXP Semiconductors NTS0104BQ-Q100X

Overview

NTS0104BQ-Q100 from NXP Semiconductors is a 4-bit dual-supply auto-sensing bidirectional voltage-level translator optimized for automotive I²C/SMBus and GPIO interfacing between 1.8 V/2.5 V/3.3 V and 5.0 V domains. It features independent VCC(A) (1.65–3.6 V) and VCC(B) (2.3–5.5 V) supplies, open-drain I/O architecture with internal 10 kΩ pull-ups, IOFF partial power-down protection, and AEC-Q100 Grade 1 qualification (−40 °C to +125 °C).

For engineers reviewing the NTS0104BQ-Q100 datasheet, NTS0104BQ-Q100 pinout, NTS0104BQ-Q100 application, or NTS0104BQ-Q100 equivalent, key selection criteria include its auto-direction sensing capability, 50 Mbps push-pull data rate, IOFF-enabled safe power sequencing, −40 °C to +125 °C automotive operating range, and DHVQFN14 thermal-enhanced package.

Technical Context

The NTS0104BQ-Q100 implements a switch-type translation architecture using N-channel pass-gate transistors with gate bias set ~1 V_TH above the low-voltage supply. Its output edge-rate accelerator (one-shot circuit) actively drives rising edges by temporarily enabling PMOS transistors to bypass internal 10 kΩ pull-ups, reducing effective output resistance to 50–70 Ω during acceleration.

Direction sensing is fully autonomous-no external control signal required-and relies on real-time voltage comparison between A and B ports. The device enforces VCC(A) ≤ VCC(B) in active operation but tolerates any power-up sequence; IOFF circuitry disables outputs and blocks backflow current when either supply is at GND.

Key Specifications

Pinout & Package

DHVQFN14 (SOT762-1) package: 2.5 mm × 3.0 mm × 0.85 mm body, 14-terminal no-lead thermal-enhanced quad flat design with exposed thermal pad (non-soldered, floating or GND-connected per datasheet guidance).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional voltage translation applications.

Compared with TXS0104E-Q1 and SN74AVC4T245-Q1, the NTS0104BQ-Q100 uniquely combines auto-direction sensing, integrated pull-ups, IOFF protection, and 50 Mbps capability - making it the only option qualified for high-reliability, space-constrained automotive I²C and GPIO bridging where minimal external components and robust power sequencing are mandatory.

Availability

NTS0104BQ-Q100 is available at Aetrix Electronics and suitable for automotive body electronics, ADAS sensor interfaces, infotainment system voltage bridging, and electric powertrain control modules requiring stable component supply across extended temperature and lifecycle demands.

Supply support for NTS0104BQ-Q100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on automotive, industrial, IoT, and communication infrastructure markets, delivering secure, energy-efficient, and scalable silicon solutions.

The NTS0104-Q100 product line delivers automotive-qualified, ultra-low-power bidirectional level translators targeting I²C, SMBus, and GPIO interconnect in multi-voltage electronic control units - designed specifically to reduce BOM count and improve system robustness in harsh automotive environments.

FAQ

What is the maximum allowable voltage difference between VCC(A) and VCC(B) for reliable operation of the NTS0104BQ-Q100?

The NTS0104BQ-Q100 requires VCC(A) ≤ VCC(B) during active operation per datasheet Section 14.5. While no absolute maximum differential is specified, the recommended operating conditions limit VCC(A) to 3.6 V and VCC(B) to 5.5 V - resulting in a maximum safe differential of 1.9 V. Exceeding this may compromise the gate-bias circuitry or violate the absolute maximum rating of ±6.5 V on either supply relative to GND.

Does the NTS0104BQ-Q100 support true push-pull driving on its I/O ports, or is it strictly open-drain?

The NTS0104BQ-Q100 implements open-drain I/O architecture on both A and B ports, with internal 10 kΩ pull-up resistors to their respective supplies. It does not provide active push-pull drive capability. However, its edge-rate accelerator circuit temporarily enables PMOS transistors to source current during rising edges - mimicking enhanced push-pull behavior for faster transitions, while retaining open-drain compatibility with I²C and SMBus standards.

Can the NTS0104BQ-Q100 be used to translate between 1.8 V and 2.5 V domains, and what are the timing implications?

Yes - the NTS0104BQ-Q100 supports 1.8 V (VCC(A)) and 2.5 V (VCC(B)) translation per Table 6. At these voltages, typical propagation delays are 3.2–4.4 ns (A↔B) and output transition times are ≤9.5 ns (tTLH/tTHL), ensuring compatibility with 100 MHz GPIO timing budgets and standard I²C timing constraints. No derating is required within the −40 °C to +125 °C range.

How does the IOFF circuitry in the NTS0104BQ-Q100 protect against backflow current during partial power-down?

The IOFF circuitry in the NTS0104BQ-Q100 disables all output drivers and places I/Os in high-impedance state when either VCC(A) or VCC(B) drops to GND. This prevents reverse current flow through the pass-gate transistors, limiting leakage to <±1 µA per port (Table 9). It satisfies automotive requirements for safe domain isolation during sleep mode or fault conditions without external blocking diodes.

Is the thermal pad on the DHVQFN14 (SOT762-1) package of the NTS0104BQ-Q100 required to be soldered to PCB ground?

No - per datasheet Section 7.1, the thermal pad on the NTS0104BQ-Q100's DHVQFN14 package has no electrical or mechanical requirement to be soldered. If soldered, it must remain electrically floating or be connected to GND. Its primary purpose is thermal conduction, not grounding; improper connection (e.g., to a voltage rail) may cause latch-up or functional failure.