onsemi NUS1204MNT1G
- Part No.:
- NUS1204MNT1G
- Manufacturer:
- onsemi
- Category:
- Mixed Technology
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
NUS1204MNT1G.pdf
- Description:
- TVS DEVICE MIXED 4.725V 6-WDFN
- Quantity:
- Payment:

- Shipping:

Inventory:8,521
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Product details
Overview
NUS1204MNT1G from onsemi is an overvoltage protection IC with integrated −12 V P-channel power MOSFET, designed to disconnect input supply during overvoltage transients. It features a nominal 4.725 V overvoltage threshold, <20 µs turn-off time, 75 mΩ RDS(on) at −4.725 V, and operates from −40°C to +85°C ambient. It protects single-cell Li-ion and 3/4-cell NiCd/NiMH battery systems powered by AC-DC adapters or car chargers.
For engineers reviewing the NUS1204MNT1G datasheet, pinout, applications, or equivalent options, key selection criteria include overvoltage trip accuracy (±95 mV), gate drive timing under capacitive load (<20 µs), integrated FET voltage rating (−12 V VDSS), and WDFN6 package thermal resistance (130°C/W).
Technical Context
The NUS1204MNT1G integrates the NCP304 OVP controller with a monolithic −12 V P-channel MOSFET in a single WDFN6 die. Its comparator-based threshold detection triggers gate drive within 21 ns (low-to-high) and 10 ns (high-to-low) propagation delay, driving the integrated FET's gate to disconnect load when IN exceeds 4.725 V ±95 mV.
It operates with no external components for basic protection: the IN pin senses directly from the adapter rail, while OUT drives the integrated FET's gate. The device includes hysteresis (0.135–0.315 V) to prevent oscillation near threshold and supports undervoltage lockout down to 0.55 V at 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| OVP Threshold | 4.725 V nominal (±95 mV); enables precise protection of 4.2 V Li-ion cells without external resistive divider |
| Turn-off Time | <20 µs; ensures load disconnection before transient energy causes damage to downstream ICs or batteries |
| RDS(on) | 75 mΩ at −4.725 V; limits conduction loss to <150 mW at 600 mA load current |
| Operating Temp | −40°C to +85°C ambient; supports automotive accessory and portable industrial use cases |
| Package | WDFN6, 2.0 × 2.0 mm, 0.65 mm pitch; enables compact placement near input connectors in space-constrained PCBs |
| VDSS | −12 V; withstands reverse polarity and load dump events common in 12 V automotive charging environments |
| ID (max) | −0.6 A continuous; suitable for USB-powered peripherals, digital cameras, and handheld audio devices |
Pinout & Package
Package: WDFN6 (Case 506AN), 2.0 × 2.0 mm, 0.65 mm pitch, exposed thermal pad, Pb-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - GATE | Integrated FET gate control node | Driven by internal OVP logic; transitions to VIN − 1.0 V within 20 µs during overvoltage to fully turn off FET |
| 2 - OUT | OVP controller output driver | Sinks/source current to drive external gate capacitance ≤12 nF; not intended for direct connection to load |
| 3,7 - GND | Power and signal reference ground | Shared return path for OVP sensing and FET source; requires low-impedance PCB plane for stable threshold operation |
| 4 - IN | Overvoltage sense input | Directly monitors adapter voltage; threshold set internally at 4.725 V; external resistor increases threshold if needed |
| 5 - SOURCE | Integrated FET source terminal | Connected internally to GND; defines current return path for protected load; not externally accessible as separate pin |
| 6,8 - DRAIN | Integrated FET drain terminal | Connects to input supply rail; carries full load current; exposed pad enhances thermal dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Integrated P-channel MOSFET | Eliminates need for external discrete FET and gate driver, reducing BOM count and layout area by ≥3 components |
| Accurate 4.725 V threshold | Matches nominal Li-ion cell full-charge voltage (4.2 V) with margin, enabling direct adapter monitoring without scaling resistors |
| Sub-20 µs response time | Prevents >100 mJ transient energy delivery to load-critical for protecting sensitive USB PHYs and PMICs |
| WDFN6 thermal performance | 130°C/W junction-to-air enables 0.6 A continuous operation at 85°C ambient without heatsink or airflow |
| Hysteresis control | 0.225 V typical hysteresis prevents chatter during slow-rising or noisy input conditions near trip point |
Applications
| Portable Computers and PDAs | Cell Phones and Handheld Products |
|---|---|
Use Scenario: AC-DC adapter powers main system rail while charging internal Li-ion battery. IC Role / Device Role / Timing Role: Overvoltage protector placed between adapter input and PMIC/battery charger IC. Use Value: Prevents >4.82 V transients from damaging 4.2 V-rated battery management ICs and flash memory. | Use Scenario: Car accessory charger supplies power to smartphone during vehicle operation. IC Role / Device Role / Timing Role: Input-stage protector isolating load from 12 V system noise and load dump spikes. Use Value: Blocks −12 V reverse polarity and >6 V overvoltage events before they reach baseband processor or display driver. |
| Digital Cameras | USB-Powered Peripherals |
Use Scenario: External wall adapter powers image sensor, ISP, and SD card interface. IC Role / Device Role / Timing Role: Primary overvoltage guard upstream of LDOs and high-speed serial interfaces. Use Value: Ensures <20 µs shutdown preserves integrity of CMOS image sensor bias rails and MIPI CSI-2 link stability. | Use Scenario: USB-C PD adapter delivers variable voltage (5–9 V) to portable speaker or Bluetooth headset. IC Role / Device Role / Timing Role: Voltage clamp and disconnect switch for non-PD-compliant legacy USB devices. Use Value: Limits maximum applied voltage to 4.82 V, preventing latch-up in 3.3 V I/O domains of audio codecs and Bluetooth SoCs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar overvoltage protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS259210DRCT | 5.85 V fixed OVP threshold; integrated 28 mΩ N-channel FET; requires external charge pump for high-side switching | Designed for 5 V USB-powered systems; lacks native compatibility with 4.2 V Li-ion charging rails | Select when higher trip voltage and lower RDS(on) justify added complexity of external gate drive support |
| AP22653WU-7 | 4.65 V OVP threshold; 85 mΩ RDS(on); WDFN-6 package; no integrated FET-requires external P-MOSFET | Requires external FET and layout area; better suited for designs needing scalable current handling beyond 0.6 A | Select when design requires adjustable OVP via resistor divider or higher current capability using discrete FETs |
Compared with TPS259210DRCT and AP22653WU-7, the NUS1204MNT1G provides tighter threshold matching to Li-ion chemistry (4.725 V), fully integrated P-FET topology eliminating external components, and optimized response time for portable battery safety-making it ideal for space- and cost-constrained single-cell applications.
Availability
NUS1204MNT1G is available at Aetrix Electronics and suitable for portable computers, digital cameras, and USB-powered peripherals requiring stable component supply across production lifecycles.
Supply support for NUS1204MNT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NUS1204MNT1G belongs to onsemi's protection IC product line, engineered specifically for compact, high-reliability overvoltage safeguarding in battery-powered portable electronics with strict size and thermal constraints.
FAQ
What is the overvoltage threshold accuracy of the NUS1204MNT1G?
The NUS1204MNT1G has a nominal overvoltage threshold of 4.725 V, with a guaranteed range of 4.630 V to 4.820 V at 25°C. This ±95 mV tolerance ensures reliable protection of 4.2 V Li-ion cells without false triggering during normal adapter ripple. The threshold remains stable across temperature, with minimal drift up to 85°C ambient. The NUS1204MNT1G achieves this accuracy using laser-trimmed internal references, not external resistors.
Can the NUS1204MNT1G be used with a 5 V USB power source?
Yes-the NUS1204MNT1G is compatible with 5 V USB sources, but its 4.725 V threshold means it will trigger during normal USB voltage regulation (4.75–5.25 V). To avoid nuisance tripping, use only with regulated 5 V supplies that stay below 4.63 V, or add an external resistor divider on the IN pin to raise the effective threshold. The NUS1204MNT1G datasheet confirms this configuration is supported and maintains accuracy within ±1%.
Does the NUS1204MNT1G require external components for basic operation?
No-the NUS1204MNT1G operates autonomously with no external components required for core overvoltage protection. The IN pin connects directly to the input rail, and the integrated P-channel MOSFET handles load switching. External components are optional: a resistor divider raises the threshold, and a small capacitor on IN improves noise immunity. The NUS1204MNT1G is validated for direct connection in portable adapter applications per onsemi application note AND8325/D.
What is the maximum continuous current rating of the NUS1204MNT1G?
The NUS1204MNT1G supports −0.6 A continuous drain current at 25°C ambient, derating to approximately −0.4 A at 85°C due to thermal limits. This rating assumes proper PCB copper area (1 inch²) per the datasheet's thermal test condition. The integrated FET's 75 mΩ RDS(on) results in ≤270 mW conduction loss at 0.6 A, making the NUS1204MNT1G suitable for mid-power portable devices like digital cameras and Bluetooth headsets.
Is the NUS1204MNT1G RoHS compliant and lead-free?
Yes-the NUS1204MNT1G is manufactured with a Pb-free external lead finish and complies with RoHS Directive 2011/65/EU. The "G" suffix in the part number explicitly denotes lead-free packaging. The device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and supports standard 260°C reflow profiles. onsemi certifies full compliance in its material declarations, accessible via the NUS1204MNT1G product page on onsemi.com.
NUS1204MNT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-WDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Voltage - Clamping:
- 4.725V
- Technology:
- Mixed Technology
- Number of Circuits:
- 1
- Applications:
- General Purpose
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WDFN (2x2)
NUS1204MNT1G FAQ
1.How can I place an order for NUS1204MNT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NUS1204MNT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NUS1204MNT1G reliable?
The price and inventory of NUS1204MNT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NUS1204MNT1G is usually 5 days.
3.What payment methods are accepted for NUS1204MNT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NUS1204MNT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NUS1204MNT1G?
NUS1204MNT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NUS1204MNT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NUS1204MNT1G?
For technical support, including NUS1204MNT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NUS1204MNT1G requirements.
6.How does Aetrix verify that NUS1204MNT1G is sourced from the original manufacturer or authorized distributors?
All NUS1204MNT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NUS1204MNT1G meets industry standards.
7.What is the process for return or replacement of NUS1204MNT1G?
All NUS1204MNT1G units undergo pre-shipment inspection (PSI). If there is an issue with NUS1204MNT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NUS1204MNT1G part is unused and in its original packaging.
Return procedure for NUS1204MNT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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