NXP Semiconductors NVT2001GM,115

Overview

NVT2001GM,115 from NXP Semiconductors is a 1-bit bidirectional voltage level translator IC designed for open-drain and push-pull interfaces between 1.0 V–3.6 V (Vref(A)) and 1.8 V–5.5 V (Vref(B)) domains. It features <1.5 ns max propagation delay, 3.5 Ω typical ON-state resistance, 5 V-tolerant I/Os, and operates across –40 °C to +105 °C. It enables seamless I²C, SMBus, and GPIO voltage translation in mixed-voltage SoC subsystems.

For engineers reviewing the NVT2001GM,115 datasheet, NVT2001GM,115 pinout, NVT2001GM,115 application, or NVT2001GM,115 equivalent, this device delivers verified bidirectional level shifting without direction control-critical for low-latency, space-constrained embedded designs requiring robust ESD protection (4 kV HBM) and flow-through routing in XSON6 packaging.

Technical Context

The NVT2001GM,115 implements a passive clamping architecture using integrated MOSFET switches with symmetrical Ron characteristics. Its EN input-supplied by Vref(B)-controls high-impedance isolation between A1 and B1 ports, ensuring safe power-up/power-down sequencing.

It supports true bidirectional signal flow in both open-drain (e.g., I²C SCL/SDA) and push-pull configurations without external direction logic. Translation is governed by Vref(A) and Vref(B) voltage selection, with guaranteed operation when Vref(B) ≥ Vref(A) + 1 V.

Key Specifications

Pinout & Package

XSON6 package (SOT886): ultra-thin, leadless, 1 × 1.45 × 0.5 mm body with wettable flanks; requires static shielding bag (SSB) handling per ordering spec.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional voltage translation applications.

Compared with PCA9306DCUR and NVT2002GD,125, the NVT2001GM,115 provides single-channel optimization in the smallest footprint (XSON6), integrated EN control for dynamic power gating, and lower Ron-making it optimal for space-constrained, low-power, or sequenced-rail applications where channel count is precisely one.

Availability

NVT2001GM,115 is available at Aetrix Electronics and suitable for I²C bus translation, GPIO bridging, power sequencing interfaces, and multi-rail SoC subsystems requiring stable component supply across automotive, industrial, and embedded computing programs.

Supply support for NVT2001GM,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in interface and power management ICs.

The NVT2001GM,115 belongs to NXP's NVT series of passive bidirectional translators-designed specifically to replace discrete MOSFET solutions in mixed-voltage digital interconnects where size, reliability, and ESD robustness are critical.

FAQ

What is the minimum voltage difference required between Vref(A) and Vref(B) for reliable operation of the NVT2001GM,115?

The NVT2001GM,115 requires Vref(B) to be at least 1 V higher than Vref(A) for optimal clamping performance and to avoid undefined translation states. This is explicitly specified in the datasheet's recommended operating conditions and validated across temperature and process corners. Operating below this margin may result in incomplete voltage limiting or increased propagation delay variation in the NVT2001GM,115.

Can the NVT2001GM,115 be used with push-pull drivers, and what design considerations apply?

Yes, the NVT2001GM,115 supports push-pull drivers on either side, provided outputs are 3-stateable or unidirectional to prevent contention. When both sides drive push-pull, direction control must be implemented externally-unlike open-drain use where no control is needed. The NVT2001GM,115's low Ron (3.5 Ω) and fast switching ensure minimal distortion in such configurations.

Is the EN pin of the NVT2001GM,115 compatible with 1.8 V logic when Vref(B) = 3.3 V?

Yes-the EN pin is referenced to Vref(B), so with Vref(B) = 3.3 V, a 1.8 V logic HIGH does not meet the VI(EN) min requirement of Vref(A) + 0.6 V (and must be ≥2.1 V per Table 5). To ensure reliable enable, EN must be driven from the Vref(B) domain-e.g., via a 3.3 V GPIO or pull-up to Vref(B). This behavior is inherent to the NVT2001GM,115's internal level-sensing circuitry.

What is the maximum capacitive load the NVT2001GM,115 can drive while maintaining <33 MHz open-drain performance?

The NVT2001GM,115 maintains <33 MHz operation with up to 50 pF total node capacitance (including PCB trace, device input capacitance, and probe loading), assuming a 197 Ω pull-up resistor and 5 V Vpu(D). This value is confirmed in the datasheet's general description and dynamic characterization section. Exceeding 50 pF increases rise/fall times and reduces usable data rate in the NVT2001GM,115.

Does the NVT2001GM,115 require external pull-up resistors, and how are their values determined?

Yes-external pull-up resistors are mandatory on both A1 and B1 for open-drain operation. Values depend on driver sink current, VOL/VIL thresholds, and target frequency. Tables 6–8 in the NVT2001GM,115 datasheet provide minimum Rpu values (e.g., 750 Ω for 1.0 V ↔ 1.8 V at 3 mA sink); actual selection must be ≥ tabulated value to ensure proper logic levels and timing margins.