NXP Semiconductors NVT2001GMZ

Overview

NVT2001GMZ from NXP Semiconductors is a 1-bit bidirectional voltage level translator IC designed for open-drain and push-pull applications, operating between 1.0 V–3.6 V (Vref(A)) and 1.8 V–5.5 V (Vref(B)), with ≤1.5 ns max propagation delay, 3.5 Ω typical ON-state resistance, and 4 kV HBM ESD protection. It enables seamless I²C, SMBus, and GPIO interfacing between low-voltage processors (e.g., 1.2 V/1.8 V cores) and higher-voltage peripherals (e.g., 3.3 V/5 V I/Os) without direction control.

For engineers reviewing the NVT2001GMZ datasheet, NVT2001GMZ pinout, NVT2001GMZ application, or NVT2001GMZ equivalent, this page delivers verified electrical parameters, XSON6 package layout, real-world translation use cases, and validated alternative parts - all grounded in NXP's Rev. 4.4 product data sheet and ordering documentation.

Technical Context

The NVT2001GMZ implements a passive MOSFET-based clamping architecture with no internal direction pin: when either A1 or B1 is LOW, the internal switch turns ON, establishing a low-impedance path (Ron ≈ 3.5 Ω) between ports; when A1 is HIGH, B1 is pulled to Vpu(D) via external pull-up, enabling up-translation. EN is referenced to Vref(B) and must be ≥1 V above Vref(A) for reliable operation.

Its flow-through pinout (GND–VREFA–A1–B1–VREFB–EN) minimizes PCB trace crossovers, while symmetrical fabrication ensures matched propagation delay (<1.5 ns) and voltage tracking across channels - eliminating skew issues common in discrete transistor translators.

Key Specifications

Pinout & Package

XSON6 (SOT886) package: plastic extremely thin small outline, no leads, 6-terminal, 1.0 × 1.45 × 0.5 mm body, requires static shielding bag (SSB) handling per ordering info.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional voltage translation applications.

Compared with PCA9306DCUR and NVT2002GD, the NVT2001GMZ offers optimal footprint efficiency for single-signal translation, lower ON-resistance for reduced voltage droop, and native XSON6 compatibility with high-density BGA processor layouts - making it the preferred choice for compact, low-power embedded systems requiring exactly one translation path.

Availability

NVT2001GMZ is available at Aetrix Electronics and suitable for I²C bus bridging, low-voltage microcontroller interface, multi-rail power domain isolation, and SMBus-compatible system management requiring stable component supply across automotive, industrial, and medical electronics programs.

Supply support for NVT2001GMZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in interface IP and mixed-signal design.

The NVT200x family was engineered specifically for robust, pin-efficient bidirectional level translation in resource-constrained embedded systems - addressing the growing need for interoperability between sub-1.2 V process nodes and legacy 3.3 V/5 V peripherals.

FAQ

What is the minimum Vref(B) voltage required for reliable operation of the NVT2001GMZ?

The NVT2001GMZ requires Vref(B) to be at least 1 V higher than Vref(A) for optimal translator performance, as specified in Table 5 and Section 7.2. For example, with Vref(A) = 1.8 V, Vref(B) must be ≥2.8 V - commonly implemented using 3.3 V or 5 V supplies. This margin ensures proper EN biasing and prevents incomplete clamping during voltage transitions.

Can the NVT2001GMZ be used with push-pull drivers on both sides?

Yes, the NVT2001GMZ supports push-pull drivers on both A1 and B1 sides, but only if outputs are 3-stateable and direction-controlled to prevent HIGH-to-LOW contention. Section 7.2 states that unidirectional data flow or external direction logic is mandatory in this configuration - unlike open-drain-only use, which requires no direction control.

Does the NVT2001GMZ require external pull-up resistors, and if so, where?

Yes, the NVT2001GMZ requires external pull-up resistors on the B1 side to Vpu(D), and optionally on A1 if used in open-drain mode. Table 6–8 provide minimum RPU values based on driver sink current (3 mA/10 mA/15 mA) and voltage combinations. For 1.8 V ↔ 3.3 V I²C, typical values are Rpu(A) = 1.47 kΩ and Rpu(B) = 1.47 kΩ at 3 mA drive.

What is the thermal pad configuration of the NVT2001GMZ XSON6 package?

The NVT2001GMZ in XSON6 (SOT886) has no thermal pad - unlike the NVT2002TL HXSON8 variant. Its 1.0 × 1.45 × 0.5 mm body relies on soldered terminals for thermal dissipation. No PCB thermal pad or center land is required, simplifying layout and eliminating risk of shorts under the package.

How does the EN pin behave during power-up, and what is the recommended circuit?

The EN pin must be held LOW during power-up or power-down to ensure high-impedance isolation. Per Section 7.1 and Figure 7, EN should be tied to VREFB through a pull-up resistor (typically 200 kΩ) and optionally filtered with a 0.1 µF capacitor to VREFB. This guarantees EN remains inactive until VREFB stabilizes, preventing unintended translation during rail ramp-up.