NXP Semiconductors NVT2006BQ,115

Overview

NVT2006BQ,115 from NXP Semiconductors is a 6-bit bidirectional voltage-level translator IC for open-drain and push-pull applications, operating between 1.0 V–3.6 V (Vref(A)) and 1.8 V–5.5 V (Vref(B)), with ≤1.5 ns max propagation delay, 3.5 Ω typical ON-state resistance, and 5 V-tolerant I/Os. It enables seamless level translation in I²C bus interfaces between 1.8 V processors and 3.3 V peripherals without direction control.

For engineers reviewing the NVT2006BQ,115 datasheet, NVT2006BQ,115 pinout, NVT2006BQ,115 application, or NVT2006BQ,115 equivalent, key selection considerations include its DHVQFN16 package, EN-controlled high-impedance disable state, flow-through pinout for PCB routing, ESD robustness (3.5 kV HBM), and compatibility with mixed-voltage I/O domains requiring sub-33 MHz signal integrity.

Technical Context

The NVT2006BQ,115 implements a passive MOSFET-based clamping architecture with symmetrical An–Bn channel pairs, where conduction occurs only when one side is LOW, limiting An voltage to Vref(A) and pulling Bn to Vpu(D) via external resistors. Its EN input-supplied by Vref(B)-controls bidirectional pass-through (EN = HIGH) or full I/O isolation (EN = LOW).

Unlike direction-pin translators, it achieves true bidirectionality through voltage-dependent clamp activation: when An is LOW, current flows from Bn to An; when Bn is LOW, current flows from An to Bn. All six channels share identical electrical characteristics, minimizing inter-channel skew and ensuring consistent timing across I²C SDA/SCL or GPIO lines.

Key Specifications

Pinout & Package

DHVQFN16 package: 2.5 × 3.5 × 0.85 mm body, no leads, thermal pad exposed on underside, moisture sensitivity level 1 (MSL1), RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional voltage translation applications.

Compared with PCA9306DCUR and TXS0108EPRJR, the NVT2006BQ,115 delivers superior timing consistency (≤1.5 ns delay, <0.1 ns skew), user-configurable reference voltages for heterogeneous SoC integration, and proven robustness in industrial I²C noise environments-making it optimal for space-constrained, high-reliability 6-bit translation.

Availability

NVT2006BQ,115 is available at Aetrix Electronics and suitable for I²C bus interfacing, multi-voltage GPIO bridging, push-pull logic domain isolation, and power domain monitoring requiring stable component supply across industrial, automotive, and embedded computing programs.

Supply support for NVT2006BQ,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in interface IP and mixed-signal design.

The NVT2003/06 family-including NVT2006BQ,115-is engineered specifically for robust, pin-efficient bidirectional level translation in resource-constrained embedded systems where direction control overhead and signal integrity are critical.

FAQ

What is the recommended Vref(B)–Vref(A) margin for reliable operation of the NVT2006BQ,115?

The NVT2006BQ,115 requires Vref(B) ≥ Vref(A) + 1 V for optimal translator performance, as specified in the datasheet's application conditions. This margin ensures stable clamp activation and prevents unintended high-impedance states. For example, pairing Vref(A) = 1.8 V with Vref(B) = 3.3 V meets this requirement, while 1.8 V/2.5 V does not and may cause intermittent failures. Always verify this delta under worst-case voltage tolerances.

Can the NVT2006BQ,115 be used with push-pull drivers on both sides simultaneously?

Yes, the NVT2006BQ,115 supports push-pull drivers on both An and Bn sides-but only if outputs are 3-stateable or directionally controlled to avoid contention. The device itself does not prevent HIGH-to-LOW conflicts; it relies on external logic to ensure only one side drives HIGH at a time. In contrast, open-drain configurations require no such coordination, making them inherently safer for I²C-style protocols.

How does the EN pin behave during power-up, and what is the safest connection method?

The EN pin of the NVT2006BQ,115 must be held LOW during power-up to guarantee high-impedance isolation between An and Bn ports. The safest method is to tie EN to GND through a 200 kΩ pull-down resistor while connecting it to Vref(B) via a 200 kΩ pull-up-ensuring EN follows Vref(B) ramp and remains LOW until Vref(B) stabilizes. A 100 nF capacitor from EN to GND further suppresses noise-induced glitches.

What is the maximum capacitive load the NVT2006BQ,115 can drive while maintaining <33 MHz operation?

The NVT2006BQ,115 supports up to 50 pF total node capacitance (including PCB trace, device input capacitance, and probe loading) at 33 MHz in open-drain configurations with 197 Ω pull-up resistors. Exceeding 50 pF increases rise/fall times nonlinearly due to RC dominance-reducing usable frequency. For 100 pF loads, maximum reliable rate drops to ~15 MHz; layout optimization and stronger pull-ups (≤1 kΩ) are required to recover bandwidth.

Does the NVT2006BQ,115 require external pull-up resistors, and how are their values selected?

Yes, external pull-up resistors are mandatory on both An and Bn sides for open-drain operation. Values depend on driver sink strength, voltage levels, and target speed-e.g., for 1.8 V ↔ 3.3 V translation with 10 mA sink, Table 7 recommends ≥332 Ω on the A-side and ≥348 Ω on the B-side. Undersized resistors cause excessive current and heating; oversized ones slow edges and reduce noise margin. Always validate with actual scope measurements.