NXP Semiconductors NVT2008BQZ

Overview

NVT2008BQZ from NXP Semiconductors is an 8-bit bidirectional voltage-level translator IC for open-drain and push-pull applications, operating with Vref(A) from 1.0 V to 3.6 V and Vref(B) from 1.8 V to 5.5 V. It enables seamless level translation without a direction pin, features ≤1.5 ns max propagation delay, 3.5 Ω typical ON-state resistance, and supports I²C bus interfacing between 1.8 V microcontrollers and 3.3 V/5 V peripherals.

For engineers reviewing the NVT2008BQZ datasheet, NVT2008BQZ pinout, NVT2008BQZ application, or NVT2008BQZ equivalent, key selection criteria include its flow-through pinout for PCB routing efficiency, 4 kV HBM ESD rating, 5 V-tolerant I/Os, and enable-controlled high-impedance isolation during power sequencing.

Technical Context

The NVT2008BQZ uses passive MOSFET-based clamping architecture to achieve true bidirectional translation: when either An or Bn is LOW, the internal switch conducts with low Ron (~3.5 Ω), establishing a low-impedance path; when HIGH, voltage on the lower-voltage side is clamped to Vref(A), while the higher-voltage side is pulled to Vpu(D) via external resistors. EN is referenced to Vref(B) and must be ≥1 V above Vref(A) for reliable operation.

It supports mixed-mode signal domains with no direction control needed for open-drain buses (e.g., I²C), and accommodates push-pull drivers only when outputs are 3-stateable or unidirectional to avoid contention. The device maintains matched electrical characteristics across all 8 channels, minimizing inter-channel skew in timing-critical applications.

Key Specifications

Pinout & Package

DHVQFN20 package: 2.5 × 4.5 × 0.85 mm, 20-terminal thermal-enhanced quad flat no-lead with exposed die pad for improved thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional voltage translation applications.

Compared with PCA9306DCUR and TXS0108EPRJR, the NVT2008BQZ offers broader low-voltage support (down to 1.0 V), lower ON-resistance (3.5 Ω vs. ≥7 Ω), and native DHVQFN20 packaging optimized for thermal performance in high-density layouts.

Availability

NVT2008BQZ is available at Aetrix Electronics and suitable for I²C bus translation, processor-peripheral interfacing, power domain isolation, and hot-swap signal conditioning requiring stable component supply across industrial, automotive, and embedded computing programs.

Supply support for NVT2008BQZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The NVT2008BQZ belongs to NXP's NVT family of passive bidirectional translators, designed specifically for robust, pin-efficient voltage translation in mixed-supply systems without direction control overhead.

FAQ

What is the minimum Vref(A) voltage supported by the NVT2008BQZ?

The NVT2008BQZ supports Vref(A) down to 1.0 V, enabling direct interface with ultra-low-voltage processors and AI accelerators operating at 1.0 V core rails. This specification is guaranteed across the full −40 °C to +85 °C operating temperature range and is validated per NXP's Rev. 3.1 datasheet. Operation below 1.0 V is outside absolute maximum ratings and may cause unreliable clamping behavior in the NVT2008BQZ.

Can the NVT2008BQZ be used with push-pull drivers?

Yes, the NVT2008BQZ supports push-pull drivers only when both sides implement 3-state control or enforce unidirectional data flow to prevent HIGH-to-LOW contention. Unlike open-drain configurations, push-pull use requires external direction management because the NVT2008BQZ lacks built-in direction logic. This constraint is explicitly documented in Section 7.2 of the NVT2008BQZ datasheet and applies regardless of Vref(A)/Vref(B) selection.

What is the recommended pull-up resistor value for a 1.8 V ↔ 3.3 V I²C interface using NVT2008BQZ?

For a 1.8 V ↔ 3.3 V I²C interface with 3 mA driver sink current, the NVT2008BQZ datasheet (Table 6) specifies Rpu(A) = 976 Ω and Rpu(B) = 976 Ω as minimum values. These ensure VOL < 0.1 × VCC and account for ±5 % supply tolerance. Actual design values should be equal to or larger than these minima to maintain noise margin and meet rise-time requirements for standard-mode (100 kHz) or fast-mode (400 kHz) I²C operation.

Does the NVT2008BQZ require external capacitors on VREFB?

Yes, a 0.1 μF ceramic capacitor is recommended on VREFB per Figure 7 and Section 7.2 of the NVT2008BQZ datasheet to stabilize the reference and filter noise affecting EN biasing. This capacitor must be placed close to the VREFB pin and share the same ground plane as GND to minimize impedance. Omitting it may cause erratic EN activation and intermittent translation failure, especially in noisy industrial environments.

How does the EN pin behave during power-up sequences?

The EN pin of the NVT2008BQZ is referenced to Vref(B) and must be held LOW during power-up to guarantee high-impedance isolation until both Vref(A) and Vref(B) are stable. Per Section 6.1, EN must be pulled to Vref(B) via ≥200 kΩ resistor and should remain below Vref(B) − 1 V until sequencing completes. Failure to do so risks bus contention or undefined logic states in the NVT2008BQZ during ramp-up.